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Vishay Siliconix SIHB24N65EF-GE3
- Part No.:
- SIHB24N65EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB24N65EF-GE3.pdf
- Description:
- MOSFET N-CH 650V 24A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,865
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Product details
Overview
SIHB24N65EF-GE3 from Vishay Siliconix is a 650 V, 24 A N-channel Power MOSFET in D2PAK (TO-263) package with fast body diode, 0.156 Ω RDS(on) at 10 VGS, 122 nC total gate charge, and 691 mJ avalanche energy rating-designed for high-efficiency ZVS phase-shifted bridge and LCC resonant converters in solar inverters and telecom power supplies.
For engineers reviewing the SIHB24N65EF-GE3 datasheet, SIHB24N65EF-GE3 pinout, SIHB24N65EF-GE3 application, or SIHB24N65EF-GE3 equivalent, key selection criteria include its low Qrr (0.9–2.1 μC), reduced trr (151–288 ns), ultra-low Ciss (2774 pF), and E-series fast-body-diode optimization for hard-switched and resonant topologies requiring robust unclamped inductive switching capability.
Technical Context
This MOSFET employs Vishay's E-series technology to minimize reverse recovery charge and time-critical for reducing turn-off losses in phase-shifted full-bridge and 3-level inverter topologies. Its 0.5 °C/W RthJC enables high-power density thermal design when mounted on copper-clad PCBs or heatsinks.
The device features a fully rated 650 V VDS, ±30 V VGS, and 150 °C maximum junction temperature, with dV/dt immunity up to 70 V/ns (TJ = 125 °C) and 50 V/ns for body diode commutation-supporting reliable operation in noisy industrial SMPS environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Withstands DC bus voltages up to 520 V in 400 V nominal systems with margin for transients and ripple. |
| RDS(on) max | 0.156 Ω at VGS = 10 V, TJ = 25 °C - Enables <1.8 W conduction loss at 12 A continuous drain current. |
| Qg max | 122 nC - Low gate drive power requirement supports efficient operation with standard gate drivers (e.g., UCC27xx). |
| Qrr | 0.9–2.1 μC - Reduces switching loss and EMI during diode commutation in LLC and PSFB topologies. |
| EAS | 691 mJ - Rated single-pulse avalanche energy allows safe operation under unclamped inductive switching stress. |
| Ciss | 2774 pF - Low input capacitance minimizes Miller effect and improves high-frequency gate drive efficiency. |
| trr | 151–288 ns - Fast body diode recovery supports >100 kHz resonant converter operation without excessive loss. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal performance and mechanical robustness in high-current applications. Standard 3-pin configuration with G–D–S terminal layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires ≤122 nC charge for full enhancement; low Ciss reduces driver loading. |
| D (Drain) | Main current output / heat sink interface | Connected to PCB copper pour or heatsink via exposed metal tab; carries full load current and dissipates heat (RthJC = 0.5 °C/W). |
| S (Source) | Reference node / return path | Serves as local ground reference for gate drive loop; low-inductance source routing critical to suppress ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode (E-series) | Reduces Qrr by >50% vs. standard 650 V MOSFETs-enabling higher frequency operation in resonant converters without snubbers. |
| Low RDS(on) × Qg FOM | 19.0 Ω·nC - Optimized trade-off between conduction and switching loss for 100–300 kHz SMPS designs. |
| Avalanche-rated (UIS) | 691 mJ single-pulse energy - Eliminates need for external clamping in inductive load switching circuits like welders and battery chargers. |
| High dV/dt immunity | 70 V/ns (drain) and 50 V/ns (body diode) - Resists false turn-on in high-noise industrial environments and fast-rising bus transients. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912. |
Applications
| Solar Photovoltaic Inverters | Telecom Server Power Supplies |
|---|---|
Use Scenario: High-voltage DC-AC conversion stage in string inverters using 3-level NPC or T-type topologies. IC Role / Device Role / Timing Role: Main switching device in high-side/low-side legs handling 600 V DC bus and delivering >3 kW output. Use Value: Low Qrr and fast trr minimize dead-time losses and improve THD; 650 V rating accommodates 1000 V PV array open-circuit voltage with safety margin. |
Use Scenario: Primary-side switch in phase-shifted full-bridge (PSFB) topology for 48 V telecom rectifiers and server CRPS units. IC Role / Device Role / Timing Role: ZVS-capable power switch enabling >95% efficiency at 200–500 kHz switching frequencies. Use Value: Reduced Coss and Qgd enable reliable zero-voltage switching across wide load range; 24 A ID supports >1.5 kW per phase. |
| HID Lighting Ballasts | Industrial Battery Chargers |
Use Scenario: Resonant half-bridge driver for high-intensity discharge lamps requiring precise current regulation and hot restrike capability. IC Role / Device Role / Timing Role: High-reliability switching element operating in LCC topology with frequent hard commutation events. Use Value: Avalanche energy rating ensures survival during lamp arc instability; fast body diode eliminates need for external anti-parallel diodes. |
Use Scenario: Output stage switch in multi-kW lithium-ion battery chargers using asymmetric half-bridge or dual-active-bridge topologies. IC Role / Device Role / Timing Role: High-current, high-voltage switch managing bidirectional power flow and regenerative braking energy recovery. Use Value: 150 °C TJ rating and low RDS(on) support continuous 24 A operation under forced-air cooling; robust UIS withstands battery short-circuit transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW24N65M5 | 650 V, 24 A, RDS(on) = 0.15 Ω, Qg = 95 nC, no specified Qrr or trr data; D2PAK package. | Lacks documented fast body diode specs-less suitable for ZVS or resonant topologies requiring low Qrr. | Prefer SIHB24N65EF-GE3 where diode recovery performance is critical; STW24N65M5 may suffice in hard-switched flyback or forward converters. |
| IXFH24N65X2 | 650 V, 24 A, RDS(on) = 0.145 Ω, Qg = 105 nC, Qrr = 1.2 μC, trr = 220 ns; TO-247 package. | Higher thermal resistance (RthJC ≈ 0.65 °C/W) and through-hole mounting limits PCB density vs. D2PAK surface-mount of SIHB24N65EF-GE3. | Choose IXFH24N65X2 for legacy through-hole designs or higher peak power derating; SIHB24N65EF-GE3 preferred for compact, high-density SMT layouts. |
Compared with STW24N65M5 and IXFH24N65X2, SIHB24N65EF-GE3 uniquely combines D2PAK SMT packaging, industry-leading Qrr/trr specs, and 0.5 °C/W thermal resistance-making it optimal for space-constrained, high-frequency resonant converters demanding both efficiency and reliability.
Availability
SIHB24N65EF-GE3 is available at Aetrix Electronics and suitable for solar inverters, telecom power supplies, HID lighting ballasts, and industrial battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHB24N65EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIHB24N65EF-GE3 belongs to Vishay's E-series Power MOSFET family-engineered specifically for high-frequency resonant and soft-switching power conversion applications demanding low Qrr, fast trr, and robust avalanche capability.
FAQ
What is the maximum continuous drain current rating for SIHB24N65EF-GE3 at 100 °C case temperature?
The SIHB24N65EF-GE3 has a continuous drain current rating of 15 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual board layout, copper area, and airflow conditions in the final design. The SIHB24N65EF-GE3 maintains 24 A rating only at TC = 25 °C.
Does SIHB24N65EF-GE3 support logic-level gate drive?
No, SIHB24N65EF-GE3 is not a logic-level MOSFET-it specifies RDS(on) at VGS = 10 V and has a gate threshold voltage range of 2–4 V. It requires a 10 V gate drive for full enhancement and minimal conduction loss. The SIHB24N65EF-GE3 does not guarantee low RDS(on) at 5 V and is incompatible with 3.3 V microcontroller outputs without level-shifting or gate driver amplification.
What is the significance of the "E" in SIHB24N65EF-GE3?
The "E" in SIHB24N65EF-GE3 denotes Vishay's E-series technology-a proprietary process optimizing the body diode for fast recovery, low Qrr, and reduced trr. This distinguishes it from standard 650 V MOSFETs and directly enables its use in ZVS and resonant topologies. The SIHB24N65EF-GE3 leverages this feature to achieve 0.9–2.1 μC Qrr and 151–288 ns trr, confirmed in the device's official specifications.
Can SIHB24N65EF-GE3 replace older 600 V MOSFETs in existing designs?
SIHB24N65EF-GE3 offers a 650 V rating versus typical 600 V devices, providing additional voltage margin for bus transients and system derating. However, direct replacement requires verification of gate charge (122 nC), RDS(on) (0.156 Ω), and thermal interface-especially due to its D2PAK footprint and 0.5 °C/W RthJC. The SIHB24N65EF-GE3 is not a drop-in substitute without layout and drive circuit review.
Is SIHB24N65EF-GE3 suitable for synchronous rectification?
No-SIHB24N65EF-GE3 is optimized as a primary-side high-voltage switch, not a low-side synchronous rectifier. Its body diode is fast but not optimized for low VSD (1.2 V max at 12 A), and its Qg (122 nC) is too high for efficient gate-driven synchronous rectification. For secondary-side rectification, dedicated low-VDS, low-Qg MOSFETs (e.g., 100 V Si or GaN devices) are recommended instead of SIHB24N65EF-GE3.
SIHB24N65EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 156mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 122 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2774 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB24N65EF-GE3 FAQ
1.How can I place an order for SIHB24N65EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB24N65EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB24N65EF-GE3 reliable?
The price and inventory of SIHB24N65EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB24N65EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB24N65EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB24N65EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB24N65EF-GE3?
SIHB24N65EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB24N65EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB24N65EF-GE3?
For technical support, including SIHB24N65EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB24N65EF-GE3 requirements.
6.How does Aetrix verify that SIHB24N65EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB24N65EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB24N65EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB24N65EF-GE3?
All SIHB24N65EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB24N65EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB24N65EF-GE3 part is unused and in its original packaging.
Return procedure for SIHB24N65EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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