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Vishay Siliconix SIHB33N60ET5-GE3
- Part No.:
- SIHB33N60ET5-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB33N60ET5-GE3.pdf
- Description:
- MOSFET N-CH 600V 33A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,520
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Product details
Overview
SIHB33N60ET5-GE3 from Vishay Siliconix is a 600 V, 33 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring RDS(on) = 0.099 Ω @ VGS = 10 V, Qg = 150 nC, and avalanche-rated (EAS = 793 mJ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.
For engineers reviewing the SIHB33N60ET5-GE3 datasheet, SIHB33N60ET5-GE3 pinout, SIHB33N60ET5-GE3 application, or SIHB33N60ET5-GE3 equivalent, this device is evaluated for high-voltage, medium-current hard-switched topologies requiring robust UIS capability, low Ciss (3508 pF), and stable RDS(on) over temperature.
Technical Context
This E-Series MOSFET uses planar stripe silicon technology optimized for high-voltage operation with controlled dV/dt (70 V/ns) and fast body diode recovery (trr = 503–1006 ns). Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on under standard 10 V gate drive while maintaining noise immunity.
The device integrates an intrinsic body diode rated for 33 A continuous source current and 88 A pulsed current, with VSD = 0.9–1.2 V at 16.5 A and TJ = 25 °C. Thermal resistance RthJC = 0.45 °C/W enables high-power dissipation when mounted on adequately sized copper planes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for transient spikes in PFC and industrial SMPS |
| RDS(on) max | 0.099 Ω @ VGS = 10 V - enables <1.1 W conduction loss at 33 A, critical for thermal management in compact power modules |
| Qg max | 150 nC - determines gate driver power requirement and switching speed; lower than legacy 600 V MOSFETs for reduced driver stress |
| EAS | 793 mJ - specifies single-pulse unclamped inductive switching ruggedness, essential for reliability in flyback and resonant converters |
| Ciss | 3508 pF @ VDS = 100 V - impacts gate drive loop stability and Miller effect; low relative to RDS(on) yields favorable FOM |
| tr/tf | 60/54 ns typical - defines switching transition times at VDD = 480 V, ID = 16.5 A, Rg = 9.1 Ω, enabling >100 kHz operation |
| TJ range | −55 to +150 °C - supports operation in sealed industrial enclosures and baseplate-cooled server power supplies |
Pinout & Package
D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline per JEDEC TO-263AB, 14.61 mm × 10.67 mm footprint, 4.83 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤ ±30 V drive; low input capacitance (Ciss = 3508 pF) reduces driver loading |
| Pin 2 (D) | Drain | Main high-side switching node; electrically and thermally connected to exposed copper pad; handles full 600 V blocking |
| Pin 3 (S) | Source | Power return path and gate reference; ties to PCB ground plane; body diode anode connects internally to source |
Key Features
| Feature | Design Value |
|---|---|
| Low figure-of-merit (RDS(on) × Qg) | ~14.9 Ω·nC - improves efficiency trade-off between conduction and switching loss in 60–100 kHz PFC designs |
| Avalanche energy rating (EAS) | 793 mJ - eliminates need for external snubbers in inductive load switching, reducing BOM count and layout area |
| Ultra-low gate charge (Qg) | 150 nC max - allows use of low-cost, low-current gate drivers (e.g., 1–2 A peak) without compromising switching speed |
| Reduced output capacitance (Coss) | 156 pF - lowers capacitive turn-off loss and improves ZVS feasibility in LLC resonant converters |
| Body diode with fast recovery | trr = 503–1006 ns, Qrr = 8.5–17 μC - minimizes reverse recovery loss and EMI in synchronous rectification and half-bridge freewheeling |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Boost PFC front-end operating at 65–100 kHz with 480 V DC output from 230 V AC input. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter; handles 33 A RMS input current. Use Value: Low RDS(on) and Qg reduce total losses by ~12% vs. prior-generation 600 V MOSFETs, improving system efficiency from 95.2% to 96.1% at full load. |
Use Scenario: High-density 3 kW telecom rectifier with dual-phase interleaved PFC and LLC DC/DC stage. IC Role / Device Role / Timing Role: Primary-side switch in interleaved boost PFC; operates with 180° phase shift to reduce input ripple current. Use Value: Avalanche rating and tight VGS(th) tolerance (2.0–4.0 V) ensure consistent turn-on timing across parallel devices, minimizing current imbalance. |
| Solar PV Inverter DC Link | Industrial Motor Drive Inverter |
|
Use Scenario: DC link switching in string inverters handling up to 1000 V DC input with MPPT tracking. IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology; blocks 600 V while conducting bidirectional current during modulation. Use Value: Robust body diode with low VSD (0.9–1.2 V) reduces conduction loss during shoot-through protection intervals and improves thermal cycling reliability. |
Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors, operating at 4 kHz PWM with field-oriented control. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V three-phase inverter bridge; used with external anti-parallel SiC Schottky diode. Use Value: Low Ciss/Coss ratio (22.5:1) enables precise gate timing control and reduces dv/dt-induced false triggering in noisy motor environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW33N60M2 | RDS(on) = 0.085 Ω, Qg = 135 nC, D2PAK package, no specified EAS rating | Lacks avalanche energy specification; requires external clamping in inductive switching | Prefer where gate drive is constrained and avalanche stress is absent; verify layout for higher dV/dt sensitivity |
| IXFH32N60P | RDS(on) = 0.11 Ω, Qg = 120 nC, TO-247 package, EAS = 620 mJ | Larger through-hole package increases thermal resistance (RthJC = 0.55 °C/W); lower EAS | Choose when existing TO-247 heatsink infrastructure exists and board space permits; not drop-in compatible |
Compared with STW33N60M2 and IXFH32N60P, SIHB33N60ET5-GE3 offers the highest avalanche ruggedness and lowest thermal resistance in surface-mount form, making it optimal for space-constrained, high-reliability PFC and inverter designs where unclamped inductive events occur.
Availability
SIHB33N60ET5-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, lead-free/halogen-free compliance, and long-term industrial lifecycle support.
Supply support for SIHB33N60ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.
The E Series Power MOSFET product line targets high-voltage, medium-current switching applications including PFC, SMPS, and motor drives-designed for low FOM, fast switching, and robust avalanche performance.
FAQ
What is the maximum continuous drain current rating for SIHB33N60ET5-GE3 at 100 °C case temperature?
The SIHB33N60ET5-GE3 supports 21 A continuous drain current at TC = 100 °C, derated from 33 A at 25 °C using a linear derating factor of 2.2 W/°C. This reflects its thermal design headroom in forced-air or baseplate-cooled configurations where junction temperature must remain ≤150 °C. The SIHB33N60ET5-GE3 datasheet confirms this value under repetitive rating conditions with pulse width limited by maximum junction temperature.
Does SIHB33N60ET5-GE3 have a specified avalanche energy rating, and how is it tested?
Yes, SIHB33N60ET5-GE3 is rated for single-pulse unclamped inductive switching (UIS) with EAS = 793 mJ, measured per note b: VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7.5 A. This rating validates ruggedness against inductive kickback in PFC and flyback circuits. The SIHB33N60ET5-GE3 specification sheet explicitly lists this parameter in Absolute Maximum Ratings.
What is the gate threshold voltage range for SIHB33N60ET5-GE3, and why does it matter for drive circuit design?
The SIHB33N60ET5-GE3 has a gate threshold voltage VGS(th) of 2.0–4.0 V at VDS = VGS, ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on from dv/dt coupling. A narrow VGS(th) distribution also improves current sharing in paralleled SIHB33N60ET5-GE3 devices, critical for high-power PFC stages.
How does the body diode performance of SIHB33N60ET5-GE3 compare to standard FRDs in terms of reverse recovery?
The SIHB33N60ET5-GE3 body diode exhibits trr = 503–1006 ns and Qrr = 8.5–17 μC at TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V. While slower than dedicated fast recovery diodes, its soft recovery characteristic reduces EMI and voltage overshoot in freewheeling paths. For best results, the SIHB33N60ET5-GE3 should be paired with gate drive timing that avoids hard commutation into the body diode.
Is SIHB33N60ET5-GE3 RoHS-compliant and halogen-free, and what does the "-GE3" suffix indicate?
Yes, the "-GE3" suffix in SIHB33N60ET5-GE3 denotes lead (Pb)-free and halogen-free construction per Vishay's material compliance standards (see doc# 99912). It meets RoHS Directive 2011/65/EU and is qualified for industrial and telecom applications requiring green manufacturing. The SIHB33N60ET5-GE3 packaging uses matte tin plating and halogen-free molding compound, verified in Vishay's S24-0062-Rev. J datasheet.
SIHB33N60ET5-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3508 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 278W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB33N60ET5-GE3 FAQ
1.How can I place an order for SIHB33N60ET5-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB33N60ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB33N60ET5-GE3 reliable?
The price and inventory of SIHB33N60ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB33N60ET5-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB33N60ET5-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB33N60ET5-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB33N60ET5-GE3?
SIHB33N60ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB33N60ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB33N60ET5-GE3?
For technical support, including SIHB33N60ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB33N60ET5-GE3 requirements.
6.How does Aetrix verify that SIHB33N60ET5-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB33N60ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB33N60ET5-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB33N60ET5-GE3?
All SIHB33N60ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB33N60ET5-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB33N60ET5-GE3 part is unused and in its original packaging.
Return procedure for SIHB33N60ET5-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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