My Inquiry
My Account
Vishay Siliconix SIHB35N60EF-GE3
- Part No.:
- SIHB35N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHB35N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 32A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,980
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHB35N60EF-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.084 Ω RDS(on) at VGS = 10 V, 134 nC total gate charge, and avalanche-rated ruggedness (EAS = 298 mJ). It serves as a primary switching device in high-efficiency PFC and main-switch stages of telecom/server SMPS.
For engineers reviewing the SIHB35N60EF-GE3 datasheet, SIHB35N60EF-GE3 pinout, SIHB35N60EF-GE3 application, or SIHB35N60EF-GE3 equivalent, key selection criteria include its fast body diode (trr = 150 ns typ., Qrr = 1.1 μC), low Ciss (2568 pF), and optimized FOM (RDS(on) × Qg) for reduced conduction and switching losses in hard-switched 600 V topologies.
Technical Context
This MOSFET employs planar stripe silicon technology with an integrated ultra-fast body diode engineered for low reverse recovery charge and controlled dv/dt during commutation. Its gate threshold voltage (2.0–4.0 V) and low input capacitance support stable operation with standard 10 V gate drivers in continuous conduction mode (CCM) PFC and LLC resonant converters.
The device is rated for repetitive unclamped inductive switching (UIS) up to 298 mJ and exhibits a maximum junction-to-case thermal resistance of 0.5 °C/W - enabling high-power density designs when mounted on copper-clad PCBs or heatsinks. Its 600 V VDS rating and 100 V/ns dv/dt capability suit it for 400 V DC bus applications with margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus with 50 % safety margin in industrial and telecom power supplies |
| RDS(on) typ. @ 10 V | 0.084 Ω - enables ≤ 2.4 W conduction loss at 17 A continuous drain current |
| Qg max | 134 nC - determines gate drive power requirement and switching speed in 100–300 kHz SMPS |
| trr typ. | 150 ns - minimizes diode recovery-related switching loss and EMI in bridge-leg configurations |
| EAS | 298 mJ - ensures robustness against transient overcurrents without external snubbers in PFC boost stages |
| Ciss | 2568 pF - contributes to low Miller effect and stable gate control under high dv/dt conditions |
| TJ range | −55 to +150 °C - qualified for extended temperature operation in enclosed server PSU environments |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with IPC-7351B footprint "D2PAK-3".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires <1 Ω gate resistor to suppress ringing during 100+ V/ns switching |
| D (Drain) | High-side power terminal | Connected to DC bus or transformer primary; electrically tied to exposed thermal pad for low RthJC |
| S (Source) | Reference node / return path | Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | Qrr = 1.1 μC and trr = 150 ns enable efficient synchronous rectification and reduce shoot-through risk in half-bridge PFC |
| Low RDS(on) × Qg FOM | 11.3 Ω·nC - balances conduction and switching losses for optimal efficiency at 200 kHz in CCM boost converters |
| Avalanche energy rating | EAS = 298 mJ - eliminates need for external clamping in inductive load switching and improves system reliability |
| Ultra-low Ciss | 2568 pF - reduces gate drive power and improves noise immunity in high-density power modules |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912 |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary switch in continuous conduction mode (CCM) boost PFC stage of 1.5 kW redundant AC/DC module. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus and 32 A peak current at 100–200 kHz. Use Value: Low Qg and fast body diode reduce switching loss by ~18 % vs. legacy 600 V MOSFETs, improving full-load efficiency to >96.5 %. |
Use Scenario: Main switch in isolated forward or LLC resonant DC/DC converter for −48 V telecom systems. IC Role / Device Role / Timing Role: High-side switch operating at 300 kHz with 600 V blocking capability and low Coss-related dead-time loss. Use Value: 0.5 °C/W RthJC allows direct heatsink mounting, reducing thermal interface layers and enabling compact 2U form factor. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switch in three-phase string inverter MPPT stage interfacing 600–1000 V PV arrays. IC Role / Device Role / Timing Role: Unclamped inductive switching device subjected to repetitive UIS events during grid fault conditions. Use Value: 298 mJ EAS rating permits operation without snubber circuits, lowering BOM cost and layout complexity. |
Use Scenario: IGBT replacement in 3 kW induction heating inverter output stage operating at 20–80 kHz. IC Role / Device Role / Timing Role: Hard-switched power switch managing 600 V bus and 32 A RMS current with fast diode commutation. Use Value: 1.2 V VSD and low Qrr minimize body diode conduction loss during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW35N60DM6 | 650 V VDS, 0.085 Ω RDS(on), 120 nC Qg, Superjunction MDmesh™ DM6 technology | Lower gate charge improves light-load efficiency but lacks specified EAS rating | Preferred where gate drive loss dominates and avalanche stress is minimal |
| IXFH32N60P | 600 V VDS, 0.115 Ω RDS(on), 145 nC Qg, PolarHV process with higher VGS(th) (3–5 V) | Higher RDS(on) increases conduction loss; slower body diode (trr = 250 ns) | Suitable for lower-current (<25 A) designs where cost sensitivity outweighs efficiency targets |
Compared with STW35N60DM6 and IXFH32N60P, SIHB35N60EF-GE3 delivers superior avalanche ruggedness and faster body diode recovery - critical for reliability in unclamped inductive switching and high-di/dt PFC applications - while maintaining competitive conduction loss at 17 A.
Availability
SIHB35N60EF-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for SIHB35N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on performance, reliability, and application-specific optimization.
The EF Series MOSFETs - including SIHB35N60EF-GE3 - were developed for high-efficiency, high-reliability switch-mode power conversion in demanding 400–600 V DC bus applications such as datacenter PSUs and renewable energy inverters.
FAQ
What is the maximum continuous drain current rating for SIHB35N60EF-GE3 at 100 °C case temperature?
The SIHB35N60EF-GE3 has a continuous drain current rating of 20 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated with actual board-level thermal design using its 0.5 °C/W RthJC.
Does SIHB35N60EF-GE3 support logic-level gate drive?
No, SIHB35N60EF-GE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for RDS(on) at VGS = 10 V. Reliable enhancement-mode operation requires ≥8 V gate drive; 5 V logic signals will not fully turn on the device.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHB35N60EF-GE3?
The typical reverse recovery charge (Qrr) of the SIHB35N60EF-GE3 body diode is 1.1 μC, measured at TJ = 25 °C, IF = 17 A, di/dt = 100 A/μs, and VR = 400 V. This low Qrr value directly reduces commutation loss in bridge configurations.
Is SIHB35N60EF-GE3 suitable for use in solar microinverters?
Yes, SIHB35N60EF-GE3 is suitable for solar microinverters, particularly in the DC/AC H-bridge or boost stage, due to its 600 V VDS, avalanche rating (EAS = 298 mJ), and fast body diode - all critical for handling PV array transients and partial shading-induced inductive stresses.
What package type does SIHB35N60EF-GE3 use, and is it RoHS-compliant?
SIHB35N60EF-GE3 uses the D2PAK (TO-263AB) surface-mount package with an exposed drain pad. It is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912.
SIHB35N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 97mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 134 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2568 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHB35N60EF-GE3 FAQ
1.How can I place an order for SIHB35N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHB35N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHB35N60EF-GE3 reliable?
The price and inventory of SIHB35N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB35N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHB35N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB35N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHB35N60EF-GE3?
SIHB35N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHB35N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHB35N60EF-GE3?
For technical support, including SIHB35N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB35N60EF-GE3 requirements.
6.How does Aetrix verify that SIHB35N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHB35N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB35N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHB35N60EF-GE3?
All SIHB35N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB35N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHB35N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHB35N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHB35N60EF-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
