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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB4N80E-GE3

Name: SIHB4N80E-GE3
Brand: Vishay Siliconix
SKU: SIHB4N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB4N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB4N80E-GE3.pdf

Description:: MOSFET N-CH 800V 4.3A D2PAK

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Product details

Overview

SIHB4N80E-GE3 from Vishay Siliconix is an 800 V, 4.3 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 1.1 Ω @ V_GS = 10 V, Q_g = 16 nC (typ), and E_AS = 56 mJ - designed for high-voltage switching in telecom power supplies and solar PV inverters.

For engineers reviewing the SIHB4N80E-GE3 datasheet, SIHB4N80E-GE3 pinout, SIHB4N80E-GE3 application, or SIHB4N80E-GE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS topologies, thermal resistance R_thJC = 1.8 °C/W, and body diode recovery performance (t_rr = 248 ns, Q_rr = 1.4 μC).

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for reduced conduction and switching losses in hard-switched SMPS and PFC stages. Its 800 V V_DS rating supports 400 V DC bus designs with 2× safety margin, while ultra-low Q_gd/Q_g ratio (6/16 nC) improves voltage-dependent switching control.

The integral body diode is rated for I_S = 4.4 A continuous and exhibits controlled reverse recovery (dI/dt = 100 A/μs, I_RRM = 9.2 A) - enabling reliable operation in bidirectional energy transfer circuits such as synchronous rectification and LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V DC-link applications with 2× overvoltage margin for transient suppression
R_DS(on) typ @ 10 V	1.1 Ω - enables <4.7 W conduction loss at 2 A, suitable for medium-power PFC and auxiliary supplies
Q_g max	32 nC - allows efficient gate drive with low-power controllers (e.g., UCC28070, ICE2PCS01)
E_AS	56 mJ - provides unclamped inductive switching robustness without external snubbers in motor drives
t_rr	248 ns (typ) - minimizes commutation loss and EMI in high-frequency flyback and forward converters
R_thJC	1.8 °C/W - enables 69 W power dissipation with ≤125 °C case temperature using standard heatsinking
C_iss	622 pF - reduces Miller-induced turn-on risk in high-dV/dt environments (dV/dt = 70 V/ns max)

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with industry-standard footprint IPC-7351B SO-201.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard PWM ICs
D (Drain)	High-side power terminal	Connected to exposed copper pad - must be soldered to PCB thermal plane for R_thJC = 1.8 °C/W performance
S (Source)	Reference node / return path	Provides Kelvin sense point for current monitoring; ties to power ground in half-bridge configurations

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	1.1 Ω × 16 nC = 17.6 Ω·nC - balances conduction and switching loss in 100–300 kHz PFC stages
Avalanche-rated (UIS)	56 mJ single-pulse energy - eliminates need for external clamping in inductive load switching
Low C_iss and C_rss	622 pF input capacitance and 5 pF reverse transfer capacitance - suppresses Miller effect during high dV/dt transitions
Enhanced body diode	t_rr = 248 ns, Q_rr = 1.4 μC - reduces cross-conduction loss and EMI in synchronous rectifier and bidirectional DC/DC

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 80+ Gold certified 1 kW telecom rectifiers with active PFC and LLC resonant output stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC converter operating at 65–100 kHz, handling 4.3 A RMS input current. Use Value: Low Q_g and R_DS(on) reduce total losses by ≥12% vs. legacy 800 V MOSFETs, improving efficiency at 50% load.	Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to 230 V AC grid. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-level NPC topology, operating at 16 kHz with 800 V blocking. Use Value: Avalanche rating and 70 V/ns dV/dt immunity enable stable operation under lightning surge conditions per IEC 61000-4-5.
Fluorescent Ballast	Induction Heating
Use Scenario: Resonant half-bridge driver in electronic ballasts powering T5/T8 lamps at 25–65 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling lamp current via series-resonant tank; operates in zero-voltage switching region. Use Value: Fast t_r/t_f (7/20 ns) and low C_oss (34 pF) minimize dead-time losses and improve lamp ignition reliability.	Use Scenario: Full-bridge inverter driving 20–50 kHz resonant tank for domestic induction cooktops (3.5 kW output). IC Role / Device Role / Timing Role: High-current switching element handling 11 A pulsed drain current (I_DM) with repetitive UIS stress. Use Value: R_thJC = 1.8 °C/W and 150 °C T_J rating allow compact heatsink design without forced air cooling.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 80+ Gold certified 1 kW telecom rectifiers with active PFC and LLC resonant output stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC converter operating at 65–100 kHz, handling 4.3 A RMS input current.

Use Value: Low Q_g and R_DS(on) reduce total losses by ≥12% vs. legacy 800 V MOSFETs, improving efficiency at 50% load.

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to 230 V AC grid.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-level NPC topology, operating at 16 kHz with 800 V blocking.

Use Value: Avalanche rating and 70 V/ns dV/dt immunity enable stable operation under lightning surge conditions per IEC 61000-4-5.

Fluorescent Ballast

Induction Heating

Use Scenario: Resonant half-bridge driver in electronic ballasts powering T5/T8 lamps at 25–65 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling lamp current via series-resonant tank; operates in zero-voltage switching region.

Use Value: Fast t_r/t_f (7/20 ns) and low C_oss (34 pF) minimize dead-time losses and improve lamp ignition reliability.

Use Scenario: Full-bridge inverter driving 20–50 kHz resonant tank for domestic induction cooktops (3.5 kW output).

IC Role / Device Role / Timing Role: High-current switching element handling 11 A pulsed drain current (I_DM) with repetitive UIS stress.

Use Value: R_thJC = 1.8 °C/W and 150 °C T_J rating allow compact heatsink design without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK80ZFP	800 V, R_DS(on) = 1.4 Ω @ 10 V, Q_g = 22 nC, no UIS rating	Lacks avalanche energy spec; requires external clamping in inductive loads	Prefer SIHB4N80E-GE3 where unclamped inductive switching occurs (e.g., motor drives, welding)
IXTH4N80L	800 V, R_DS(on) = 1.2 Ω @ 10 V, Q_g = 28 nC, TO-247 package	Larger TO-247 footprint; higher thermal resistance (R_thJC = 2.5 °C/W)	Choose SIHB4N80E-GE3 for space-constrained D2PAK layouts requiring lower R_thJC and smaller board area

Compared with STP4NK80ZFP and IXTH4N80L, SIHB4N80E-GE3 delivers superior avalanche ruggedness, lower gate charge for high-frequency PFC, and best-in-class thermal resistance in surface-mount form - making it optimal for compact, high-reliability 400–800 V DC systems.

Availability

SIHB4N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHB4N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFETs - including SIHB4N80E-GE3 - are engineered for high-voltage, medium-current switching in telecom, industrial, and renewable energy systems where reliability under repetitive avalanche stress is critical.

FAQ

What is the maximum continuous drain current rating for SIHB4N80E-GE3 at 100 °C case temperature?

The SIHB4N80E-GE3 has a continuous drain current rating of 2.7 A at T_C = 100 °C, derated linearly from 4.3 A at 25 °C using the specified 0.56 W/°C derating factor. This value reflects safe operation under sustained thermal load with adequate heatsinking, and is validated per Vishay's absolute maximum ratings table in document 92034.

Does SIHB4N80E-GE3 support logic-level gate drive?

No, SIHB4N80E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) = 1.1 Ω. Driving it with 5 V logic will result in significantly higher on-resistance and conduction loss - use with standard 10–15 V gate drivers such as IR2110 or UCC27531.

What is the significance of the "-GE3" suffix in SIHB4N80E-GE3?

The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). It confirms the device uses matte tin plating on the D2PAK leads and meets Vishay's material categorization requirements per document 99912.

Can SIHB4N80E-GE3 replace older 800 V MOSFETs like IRFP460 in existing designs?

SIHB4N80E-GE3 is not a direct pin-compatible replacement for IRFP460 (TO-247) due to its D2PAK (TO-263) package and different pinout. While both are 800 V N-channel devices, SIHB4N80E-GE3 offers lower R_DS(on) (1.1 Ω vs. 2.7 Ω), lower Q_g, and rated UIS - but requires PCB layout revision and thermal validation before substitution.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHB4N80E-GE3?

The typical reverse recovery charge Q_rr of the integral body diode in SIHB4N80E-GE3 is 1.4 μC, measured at T_J = 25 °C, I_F = I_S = 2 A, dI/dt = 100 A/μs, and V_R = 25 V. This low Q_rr contributes to reduced switching loss and EMI in freewheeling and synchronous rectification applications.

SIHB4N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.27Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 622 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB4N80E-GE3 FAQ

1.How can I place an order for SIHB4N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB4N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB4N80E-GE3 reliable?

The price and inventory of SIHB4N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB4N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB4N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB4N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB4N80E-GE3?

SIHB4N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB4N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB4N80E-GE3?

For technical support, including SIHB4N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB4N80E-GE3 requirements.

6.How does Aetrix verify that SIHB4N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB4N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB4N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB4N80E-GE3?

All SIHB4N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB4N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB4N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHB4N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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