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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB6N65E-GE3

Name: SIHB6N65E-GE3
Brand: Vishay Siliconix
SKU: SIHB6N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB6N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB6N65E-GE3.pdf

Description:: MOSFET N-CH 650V 7A D2PAK

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Product details

Overview

SIHB6N65E-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 48 nC, and avalanche-rated E_AS = 56 mJ. It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHB6N65E-GE3 datasheet, SIHB6N65E-GE3 pinout, SIHB6N65E-GE3 application, or SIHB6N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, 0.6 Ω R_DS(on), 48 nC total gate charge, 1.6 °C/W R_thJC, and UIS-rated ruggedness - critical for hard-switched industrial and renewable energy inverters.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for fast switching with controlled dV/dt (37 V/ns at T_J = 125 °C) and low C_iss (820 pF). Its body diode exhibits t_rr = 237 ns and Q_rr = 2.2 μC at I_F = 3 A, supporting quasi-resonant and ZVS topologies.

The device operates across -55 to +150 °C junction temperature range, with V_GS(th) = 2–4 V and ΔV_DS/T_J = 0.73 V/°C, enabling stable gate drive design under thermal stress. Its 78 W P_D rating at T_C = 25 °C supports high-power density layouts when mounted on thermally optimized PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 520 V in PFC and 400 V in LLC resonant converters without derating.
R_DS(on) max	0.6 Ω at V_GS = 10 V - Enables <1.8 W conduction loss at 3 A continuous drain current in 100 kHz SMPS designs.
Q_g	48 nC - Reduces gate driver power demand and enables use of low-cost 1-A peak drivers in isolated flyback controllers.
E_AS	56 mJ - Supports unclamped inductive switching in motor drives and welding inverters without external snubbers.
R_thJC	1.6 °C/W - Allows direct heatsink mounting for thermal management in compact 1U server PSUs with ≤ 70 °C case temperature rise.
C_iss	820 pF - Minimizes Miller-induced shoot-through risk in half-bridge configurations operating above 200 kHz.
t_r/t_f	12–24 ns / 20–40 ns - Enables clean edge control in high-frequency synchronous rectification and digital PWM systems.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the internal MOSFET drain and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10 V logic-level drive; requires ≥10 V for full R_DS(on) specification; gate leakage ≤100 nA at ±20 V.
D	Drain terminal / thermal pad	High-side switch node connection; electrically tied to exposed copper tab; must be soldered to large copper pour for thermal performance.
S	Source reference / return path	Common source node for gate drive return and current sensing; connects to low-side shunt or controller ground plane.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	28.8 Ω·nC - Balances switching speed and conduction loss for optimal efficiency in 65–300 kHz PFC boost stages.
Avalanche energy rated (UIS)	56 mJ single-pulse - Eliminates need for external clamping in inductive load switching and fault-tolerant solar MPPT circuits.
Ultra-low Q_gd/Q_g ratio	11/48 ≈ 23 % - Reduces Miller plateau duration, improving controllability during hard switching and minimizing cross-conduction risk.
Body diode t_rr & Q_rr	237 ns / 2.2 μC - Enables reliable freewheeling in bridge-leg configurations without requiring external Schottky catch diodes.
High dV/dt immunity	37 V/ns at 125 °C - Maintains gate integrity during fast voltage transients in high-noise industrial motor drive environments.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1–3 kW 80 PLUS Titanium AC-DC front-end with active PFC and LLC resonant conversion. IC Role / Device Role / Timing Role: High-voltage N-channel switch in boost PFC stage and LLC half-bridge primary leg. Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >96 % system efficiency at full load while maintaining thermal margin on 2-oz copper PCBs.	Use Scenario: 48 V/54 V distributed power architecture rectifier with hold-up capacitor and hot-swap capability. IC Role / Device Role / Timing Role: Synchronous rectifier and OR-ing FET in redundant 48 V input stage. Use Value: Avalanche rating and 1.3 V V_SD support robust reverse-current blocking and fault recovery during input hot-plug events.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter bridge driving permanent magnet synchronous motors. Use Value: 650 V V_DS and 56 mJ E_AS ensure safe operation during grid fault conditions and rapid DC-link voltage transients.	Use Scenario: Inverter output stage in 0.75–2.2 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Low-loss switching element in IGBT gate-drive auxiliary supply and regenerative braking chopper. Use Value: 7 A continuous ID and 1.6 °C/W R_thJC allow direct heatsink mounting without forced air, reducing system BOM cost and footprint.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1–3 kW 80 PLUS Titanium AC-DC front-end with active PFC and LLC resonant conversion.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in boost PFC stage and LLC half-bridge primary leg.

Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >96 % system efficiency at full load while maintaining thermal margin on 2-oz copper PCBs.

Use Scenario: 48 V/54 V distributed power architecture rectifier with hold-up capacitor and hot-swap capability.

IC Role / Device Role / Timing Role: Synchronous rectifier and OR-ing FET in redundant 48 V input stage.

Use Value: Avalanche rating and 1.3 V V_SD support robust reverse-current blocking and fault recovery during input hot-plug events.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter bridge driving permanent magnet synchronous motors.

Use Value: 650 V V_DS and 56 mJ E_AS ensure safe operation during grid fault conditions and rapid DC-link voltage transients.

Use Scenario: Inverter output stage in 0.75–2.2 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Low-loss switching element in IGBT gate-drive auxiliary supply and regenerative braking chopper.

Use Value: 7 A continuous ID and 1.6 °C/W R_thJC allow direct heatsink mounting without forced air, reducing system BOM cost and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, 0.75 Ω R_DS(on), 35 nC Q_g, TO-220FP package	Lower voltage rating and higher R_DS(on); limited to ≤400 V DC-link applications	Preferred where lower gate charge reduces driver complexity but 650 V margin is not required.
IXTH6N65X2	650 V V_DS, 0.55 Ω R_DS(on), 32 nC Q_g, TO-247 package	Lower R_DS(on) and Q_g, but larger TO-247 footprint and higher cost	Selected when maximum efficiency is prioritized over board space and cost in high-volume industrial inverters.

Compared with STP6NK60ZFP and IXTH6N65X2, SIHB6N65E-GE3 offers balanced trade-offs: sufficient 650 V rating for universal input PFC, D2PAK thermal performance superior to TO-220FP, and lower system cost than TO-247 alternatives - ideal for space-constrained, high-reliability telecom and server power modules.

Availability

SIHB6N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHB6N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal efficiency.

The E Series Power MOSFETs, including SIHB6N65E-GE3, are engineered for high-voltage, high-efficiency switching in demanding power conversion applications such as telecom rectifiers, server PSUs, and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for SIHB6N65E-GE3 at 100 °C case temperature?

The SIHB6N65E-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from the 7 A rating at T_C = 25 °C, based on its 0.63 W/°C linear derating factor. Designers must verify PCB copper area and heatsinking to sustain this current in real-world thermal environments.

Does SIHB6N65E-GE3 support logic-level gate drive?

No, SIHB6N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) is specified from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the rated R_DS(on) of 0.6 Ω. Driving SIHB6N65E-GE3 with only 5 V may result in significantly higher on-resistance and excessive conduction loss - a dedicated 10 V gate driver is recommended.

What is the significance of the "-GE3" suffix in SIHB6N65E-GE3?

The "-GE3" suffix indicates that SIHB6N65E-GE3 is a lead (Pb)-free and halogen-free version in tape-and-reel packaging, compliant with Vishay's green initiative and RoHS Directive 2011/65/EU. It uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60 % RH.

Can SIHB6N65E-GE3 be used in avalanche mode repeatedly?

SIHB6N65E-GE3 is rated for single-pulse avalanche energy (E_AS) of 56 mJ, but repetitive avalanche operation is not characterized or guaranteed. The datasheet specifies only "repetitive rating" for continuous parameters like I_D and P_D. For circuits subject to frequent inductive turn-off stress, designers should implement external clamping or select devices explicitly rated for repetitive UIS.

How does the body diode performance of SIHB6N65E-GE3 compare to discrete ultrafast diodes?

The SIHB6N65E-GE3 body diode has t_rr = 237 ns and Q_rr = 2.2 μC at I_F = 3 A, making it suitable for moderate-frequency freewheeling but not a replacement for dedicated ultrafast diodes (typically <50 ns t_rr). Its V_SD = 1.3 V at 3 A is higher than Schottky diodes, so synchronous rectification or external diode co-location is advised in high-efficiency designs.

SIHB6N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB6N65E-GE3 FAQ

1.How can I place an order for SIHB6N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB6N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB6N65E-GE3 reliable?

The price and inventory of SIHB6N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB6N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB6N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB6N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB6N65E-GE3?

SIHB6N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB6N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB6N65E-GE3?

For technical support, including SIHB6N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB6N65E-GE3 requirements.

6.How does Aetrix verify that SIHB6N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB6N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB6N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB6N65E-GE3?

All SIHB6N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB6N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB6N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHB6N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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