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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD2N80E-GE3

Name: SIHD2N80E-GE3
Brand: Vishay Siliconix
SKU: SIHD2N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD2N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD2N80E-GE3.pdf

Description:: MOSFET N-CH 800V 2.8A DPAK

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Product details

Overview

SIHD2N80E-GE3 from Vishay Siliconix is an 800 V, 2.8 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 2.38 Ω R_DS(on) at V_GS = 10 V, 9.8 nC typical Q_g, and 14 mJ single-pulse avalanche energy - designed for high-voltage switching in PFC and SMPS stages of telecom and server power supplies.

For engineers reviewing the SIHD2N80E-GE3 datasheet, SIHD2N80E-GE3 pinout, SIHD2N80E-GE3 application, or SIHD2N80E-GE3 equivalent, key selection criteria include its 800 V V_DS rating, low gate charge for reduced switching loss, avalanche-rated ruggedness, and DPAK thermal performance with R_thJC = 2.0 °C/W.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low C_iss (315 pF) and ultra-low Q_gd (3.9 nC) minimize Miller-induced turn-off delay and improve EMI behavior in fast-switching topologies like boost PFC and LLC resonant converters.

The integral body diode supports synchronous rectification and freewheeling functions, with t_rr = 278 ns and Q_rr = 0.9 μC at 25 °C - enabling efficient operation in discontinuous conduction mode (DCM) and critical conduction mode (CrCM) designs without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports primary-side switching in 400 V DC bus PFC and offline 85–265 VAC SMPS with margin
R_DS(on) typ	2.38 Ω @ V_GS = 10 V - enables <2.8 A continuous conduction at T_C = 100 °C with <1.9 W conduction loss
Q_g typ	9.8 nC - reduces gate drive power and allows use of low-current drivers (e.g., 100 mA peak)
E_AS	14 mJ - withstands unclamped inductive switching events without failure in boost choke or transformer leakage scenarios
C_iss	315 pF - limits capacitive loading on gate driver and improves dV/dt immunity up to 70 V/ns
t_r/t_f	7/27 ns - supports >500 kHz switching in hard-switched topologies while maintaining efficiency
R_thJC	2.0 °C/W - enables 62.5 W power dissipation with ≤125 °C junction rise over 25 °C case temperature

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), compatible with IPC-7351B SO-252 footprint.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; input capacitance dominated by C_iss = 315 pF; requires <10 Ω series resistance to damp ringing
D (Drain)	High-side power terminal	Connected to exposed copper pad; carries full load current and must be routed over large copper pour for thermal management
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; ties to power ground plane with low-inductance layout

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	23.3 Ω·nC - improves trade-off between conduction and switching losses in high-frequency PFC stages
Avalanche-rated (UIS)	14 mJ single-pulse energy - eliminates need for external clamping in inductive load switching
Low C_oss (20 pF)	Reduces stored output capacitance energy (E_oss = 0.5 × C_oss × V²) - critical for ZVS transition efficiency
Body diode t_rr	278 ns - enables clean commutation in flyback and forward converters without voltage overshoot
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost converter operating in continuous conduction mode (CCM) at 100–300 kHz to correct AC line input to 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer from AC line to bulk capacitor via boost inductor. Use Value: 800 V V_DS rating ensures 100 % margin over 400 V bus transients; low Q_g minimizes gate drive loss at high frequency.	Use Scenario: Primary-side switch in isolated forward or half-bridge DC/DC stage converting -48 V or +54 V telecom battery input to 12 V system rail. IC Role / Device Role / Timing Role: Main power switch handling high-voltage isolation barrier duty with repetitive avalanche stress during reset. Use Value: 14 mJ E_AS rating sustains repeated inductive turn-off events without degradation; R_thJC = 2.0 °C/W enables compact heatsink design.
Solar PV Inverter DC Link	Industrial Motor Drive Snubber
Use Scenario: DC link switch in string-level MPPT boost stage interfacing photovoltaic panels (up to 1000 V open-circuit) to inverter input. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch managing variable DC input under partial shading and rapid irradiance changes. Use Value: 800 V V_DS accommodates 1000 V OC panels with safety margin; low C_iss improves noise immunity in EMI-sensitive solar farms.	Use Scenario: Clamping device across IGBT collector-emitter in 3-phase inverter leg to absorb inductive kickback during motor phase commutation. IC Role / Device Role / Timing Role: Passive snubber switch activated only during transient overvoltage events, not in steady-state conduction. Use Value: Avalanche energy rating (14 mJ) absorbs repetitive inductive spikes without derating; TO-252 thermal pad dissipates localized pulse heat efficiently.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost converter operating in continuous conduction mode (CCM) at 100–300 kHz to correct AC line input to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer from AC line to bulk capacitor via boost inductor.

Use Value: 800 V V_DS rating ensures 100 % margin over 400 V bus transients; low Q_g minimizes gate drive loss at high frequency.

Use Scenario: Primary-side switch in isolated forward or half-bridge DC/DC stage converting -48 V or +54 V telecom battery input to 12 V system rail.

IC Role / Device Role / Timing Role: Main power switch handling high-voltage isolation barrier duty with repetitive avalanche stress during reset.

Use Value: 14 mJ E_AS rating sustains repeated inductive turn-off events without degradation; R_thJC = 2.0 °C/W enables compact heatsink design.

Solar PV Inverter DC Link

Industrial Motor Drive Snubber

Use Scenario: DC link switch in string-level MPPT boost stage interfacing photovoltaic panels (up to 1000 V open-circuit) to inverter input.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch managing variable DC input under partial shading and rapid irradiance changes.

Use Value: 800 V V_DS accommodates 1000 V OC panels with safety margin; low C_iss improves noise immunity in EMI-sensitive solar farms.

Use Scenario: Clamping device across IGBT collector-emitter in 3-phase inverter leg to absorb inductive kickback during motor phase commutation.

IC Role / Device Role / Timing Role: Passive snubber switch activated only during transient overvoltage events, not in steady-state conduction.

Use Value: Avalanche energy rating (14 mJ) absorbs repetitive inductive spikes without derating; TO-252 thermal pad dissipates localized pulse heat efficiently.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 1.2 Ω, Q_g = 45 nC, TO-220FP package	Higher current rating but larger package and higher Q_g; less suitable for space-constrained SMPS PCBs	Prefer when higher continuous current (>4 A) and through-hole assembly are required
IXTP2N80P	800 V, 2.0 A, R_DS(on) = 3.8 Ω, Q_g = 12 nC, TO-220 package	Lower current and higher R_DS(on); no avalanche rating specified; different thermal interface	Consider only for lower-power (<100 W), non-avalanche-critical designs where cost is primary constraint

Compared with STP8NK80ZFP and IXTP2N80P, SIHD2N80E-GE3 offers superior gate charge efficiency (9.8 nC vs. ≥12 nC) and certified avalanche ruggedness in a surface-mount DPAK, making it optimal for high-density, high-reliability telecom and server power modules where layout area and transient robustness are critical.

Availability

SIHD2N80E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHD2N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The SIHD2N80E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability switching in demanding industrial and communications power systems where avalanche capability and low switching loss are essential.

FAQ

What is the maximum continuous drain current rating for SIHD2N80E-GE3 at 100 °C case temperature?

The SIHD2N80E-GE3 has a maximum continuous drain current (I_D) of 1.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 2.8 A rating at 25 °C, based on the linear derating factor of 0.5 W/°C and R_thJC = 2.0 °C/W. Designers must ensure heatsinking maintains case temperature ≤100 °C for sustained 1.8 A operation.

Does SIHD2N80E-GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHD2N80E-GE3 is rated for 14 mJ single-pulse unclamped inductive switching (UIS) energy. Per datasheet note b, testing uses V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 0.9 A. This rating confirms ruggedness against inductive turn-off transients in boost, flyback, and motor drive applications without external clamping.

What is the gate threshold voltage range for SIHD2N80E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHD2N80E-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates standard-level (not logic-level) drive compatibility; reliable enhancement requires V_GS ≥ 10 V to achieve the rated R_DS(on) of 2.38 Ω. Gate drivers must supply ≥12 V to ensure margin against noise and dropouts.

How does the body diode performance of SIHD2N80E-GE3 compare to discrete Schottky diodes in high-frequency applications?

The SIHD2N80E-GE3 body diode has t_rr = 278 ns and Q_rr = 0.9 μC at 25 °C, which is slower and higher-loss than most Schottky diodes. However, its integrated nature eliminates extra footprint and parasitic inductance. For high-frequency (>300 kHz) freewheeling, external Schottky clamping may be preferred; for lower-frequency or space-constrained designs, the body diode provides adequate performance with simplified layout.

Is SIHD2N80E-GE3 suitable for use in zero-voltage switching (ZVS) resonant converters?

Yes, SIHD2N80E-GE3 supports ZVS operation due to its low C_oss (20 pF) and low C_rss (6 pF), which reduce the energy required to discharge the output capacitance before turn-on. The 800 V rating and 14 mJ avalanche capability further enhance reliability during resonant transitions. Designers should verify soft-switching conditions using the C_oss vs. V_DS curve (Fig. 5) and ensure gate drive timing aligns with resonant tank zero-crossing.

SIHD2N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.75Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.6 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 315 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD2N80E-GE3 FAQ

1.How can I place an order for SIHD2N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD2N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD2N80E-GE3 reliable?

The price and inventory of SIHD2N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD2N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD2N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD2N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD2N80E-GE3?

SIHD2N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD2N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD2N80E-GE3?

For technical support, including SIHD2N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD2N80E-GE3 requirements.

6.How does Aetrix verify that SIHD2N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD2N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD2N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD2N80E-GE3?

All SIHD2N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD2N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD2N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHD2N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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