Vishay Siliconix SIHD6N62ET1-GE3

Overview

SIHD6N62ET1-GE3 from Vishay Siliconix is a 620 V, 6 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.9 Ω @ V_GS = 10 V, Q_g = 34 nC, and E_AS = 88 mJ. It serves as a high-voltage switching element in primary-side SMPS and PFC stages for telecom and server power supplies.

For engineers reviewing the SIHD6N62ET1-GE3 datasheet, SIHD6N62ET1-GE3 pinout, SIHD6N62ET1-GE3 application, or SIHD6N62ET1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 1.6 °C/W), avalanche rating, and real-world use context for high-efficiency, high-reliability power conversion designs.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and cell layout to achieve low figure-of-merit (R_DS(on) × Q_g = 30.6 Ω·nC). Its 620 V V_DS rating supports operation across universal AC input ranges up to 380 V_AC with margin, while dV/dt capability of 37 V/ns at T_J = 125 °C enables robust noise immunity in fast-switching topologies.

The integral body diode exhibits t_rr = 190 ns and Q_rr = 1.3 μC at I_F = 3 A, supporting hard-switched and quasi-resonant converters. Thermal design is enabled by R_thJC = 1.6 °C/W and maximum P_D = 78 W at T_C = 25 °C, requiring direct heatsink mounting on the drain-connected tab.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP6NK60ZFP, SIHD6N62ET1-GE3 offers +20 V higher breakdown and surface-mount packaging for denser layouts; versus IXTP50N10P, it trades lower R_DS(on) for essential 620 V capability-making SIHD6N62ET1-GE3 the only viable option for universal-input PFC and telecom rectifier primary switches.

Availability

SIHD6N62ET1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHD6N62ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency performance.

The SIHD6N62ET1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching in telecom, server, and renewable energy power conversion where ruggedness, low switching loss, and avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current for SIHD6N62ET1-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHD6N62ET1-GE3 is 4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; at T_C = 25 °C, the rating rises to 6 A. Engineers must verify junction temperature using R_thJC = 1.6 °C/W and actual power loss to ensure safe operation within the -55 °C to +150 °C T_J range.

Does SIHD6N62ET1-GE3 have avalanche energy rating, and how is it tested?

Yes, SIHD6N62ET1-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 88 mJ, tested per JEDEC standard JESD24-1. The test applies a defined inductive load (L = 28.2 mH), gate resistance (R_g = 25 Ω), and current (I_AS = 2.5 A) at T_J = 25 °C. This rating confirms robustness against transient overvoltage events in hard-switched topologies like flyback or forward converters, eliminating need for external clamping circuits in many designs.

What is the gate threshold voltage range for SIHD6N62ET1-GE3, and why does it matter?

The gate threshold voltage (V_GS(th)) for SIHD6N62ET1-GE3 is specified as 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage. A narrow V_GS(th) distribution improves consistency across parallel devices in high-current designs, and the upper limit guards against false triggering in noisy industrial environments where gate drive margins may be constrained.

How does the body diode performance of SIHD6N62ET1-GE3 impact its use in bridge configurations?

The body diode of SIHD6N62ET1-GE3 has t_rr = 190 ns and Q_rr = 1.3 μC at I_F = 3 A, enabling predictable commutation in half-bridge and full-bridge topologies. Low Q_rr reduces reverse recovery current spikes that cause EMI and increase switching losses in the complementary device; consistent t_rr allows accurate dead-time calculation to avoid shoot-through. This makes SIHD6N62ET1-GE3 suitable for phase-shifted full-bridge and LLC resonant converters where body diode conduction occurs during zero-voltage switching transitions.

Is SIHD6N62ET1-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHD6N62ET1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and uses halogen-free molding compound. Standard Pb-free reflow profiles (e.g., IPC/JEDEC J-STD-020 Class 3A) can be applied without risk of delamination or parametric shift, provided board layout follows Vishay's recommended DPAK pad dimensions for optimal thermal and mechanical reliability.