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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD9N60E-GE3

Name: SIHD9N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD9N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD9N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD9N60E-GE3.pdf

Description:: MOSFET N-CH 600V 9A DPAK

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Product details

Overview

SIHD9N60E-GE3 from Vishay Siliconix is a 600 V, 9 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.320 Ω at V_GS = 10 V, Q_g = 26 nC (typ), and avalanche-rated (E_AS = 111 mJ). It delivers low conduction and switching losses for high-efficiency SMPS and PFC stages in telecom and server power supplies.

For engineers reviewing the SIHD9N60E-GE3 datasheet, SIHD9N60E-GE3 pinout, SIHD9N60E-GE3 application, or SIHD9N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.320 Ω R_DS(on) at 10 V drive, 26 nC gate charge, 111 mJ unclamped inductive switching capability, and DPAK thermal resistance of 1.6 °C/W (junction-to-case).

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (778 pF) and ultra-low Q_gd/Q_g ratio (13/26 nC) reduce Miller-induced turn-off delay and improve controllability during fast transitions. The integral body diode supports synchronous rectification and freewheeling with t_rr = 207 ns (typ) and Q_rr = 2.2 μC.

The MOSFET is rated for continuous operation up to T_J = 150 °C, with linear derating (0.63 W/°C) above T_C = 25 °C. Its dV/dt immunity (70 V/ns at T_J = 125 °C) and UIS ruggedness enable reliable use in noisy, high-dI/dt environments such as motor drives and solar inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports primary-side switching in 400 V DC bus systems with 50 V margin for voltage spikes.
R_DS(on) typ	0.320 Ω at V_GS = 10 V - Enables <1.3 W conduction loss at 6.4 A RMS in continuous conduction mode PFC.
Q_g max	52 nC - Determines gate driver current requirement; 26 nC typical enables efficient 100 kHz–300 kHz operation with low-power drivers.
E_AS	111 mJ - Confirmed single-pulse avalanche energy allows safe operation under inductive load turn-off without snubbers.
R_thJC	1.6 °C/W - Enables 78 W power dissipation with ≤125 °C case temperature rise, supporting compact heatsink designs.
t_r/t_f	13/12 ns (typ) - Fast switching edges minimize overlap loss in hard-switched topologies like LLC resonant converters.
C_iss	778 pF - Low input capacitance reduces gate drive power and improves high-frequency stability in PWM controllers.

Pinout & Package

SIHD9N60E-GE3 uses the DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 6.22 mm × 6.73 mm × 1.78 mm (L × W × H) and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; ±30 V absolute max rating prevents ESD damage.
Pin 2 (D)	Drain	Main high-side switching node; electrically connected to exposed copper tab for low-inductance, low-thermal-resistance path to heatsink.
Pin 3 (S)	Source	Power return and reference for gate drive; ties to PCB ground plane; body diode anode is internally connected here.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.3 Ω·nC - Reduces total switching + conduction loss trade-off, enabling higher efficiency at 100–250 kHz.
Avalanche energy rated (UIS)	111 mJ - Eliminates need for external clamping circuits in inductive load switching, simplifying layout.
Ultra-low Q_gd	13 nC - Minimizes Miller plateau duration, improving noise immunity and reducing risk of spurious turn-on.
Low C_iss	778 pF - Enables stable gate drive with low-current controllers (e.g., UC384x family) without oscillation.
High dV/dt immunity	70 V/ns at 125 °C - Ensures robust operation in high-noise industrial environments without false triggering.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC link, operating at 200 kHz with zero-voltage switching assistance. Use Value: 0.320 Ω R_DS(on) and 26 nC Q_g reduce total losses by ~12% vs. legacy 650 V MOSFETs, improving system efficiency from 94.2% to 95.1%.	Use Scenario: Boost PFC stage in 1.5 kW server PSU with interleaved dual-phase control. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 390 V DC bus, driven by UCC28070 controller. Use Value: 778 pF C_iss and 13 nC Q_gd ensure clean gate waveforms and minimal shoot-through risk during phase interleaving.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level 3 kW photovoltaic inverter with transformerless topology. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge leg, subjected to repetitive 600 V blocking and 100 A surge currents. Use Value: 111 mJ E_AS rating withstands grid fault transients without failure, eliminating need for redundant snubber networks.	Use Scenario: IGBT replacement in 7.5 kW HVAC inverter output stage using discrete 3-phase bridge. IC Role / Device Role / Timing Role: Low-side switching element in 16 kHz PWM-driven inverter, conducting 9 A RMS with 22 A peak diode recovery current. Use Value: 207 ns t_rr and 2.2 μC Q_rr limit reverse recovery loss to <0.8 W per device, enabling direct IGBT substitution without gate drive redesign.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC link, operating at 200 kHz with zero-voltage switching assistance.

Use Value: 0.320 Ω R_DS(on) and 26 nC Q_g reduce total losses by ~12% vs. legacy 650 V MOSFETs, improving system efficiency from 94.2% to 95.1%.

Use Scenario: Boost PFC stage in 1.5 kW server PSU with interleaved dual-phase control.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 390 V DC bus, driven by UCC28070 controller.

Use Value: 778 pF C_iss and 13 nC Q_gd ensure clean gate waveforms and minimal shoot-through risk during phase interleaving.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level 3 kW photovoltaic inverter with transformerless topology.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in H-bridge leg, subjected to repetitive 600 V blocking and 100 A surge currents.

Use Value: 111 mJ E_AS rating withstands grid fault transients without failure, eliminating need for redundant snubber networks.

Use Scenario: IGBT replacement in 7.5 kW HVAC inverter output stage using discrete 3-phase bridge.

IC Role / Device Role / Timing Role: Low-side switching element in 16 kHz PWM-driven inverter, conducting 9 A RMS with 22 A peak diode recovery current.

Use Value: 207 ns t_rr and 2.2 μC Q_rr limit reverse recovery loss to <0.8 W per device, enabling direct IGBT substitution without gate drive redesign.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 9 A, R_DS(on) = 0.36 Ω, Q_g = 32 nC, TO-220FP package	Higher R_DS(on) and gate charge increase conduction/switching loss; through-hole mounting limits board density	Preferred where cost sensitivity outweighs efficiency and space constraints; not suitable for high-density SMT layouts.
IXTH9N60L2	600 V, 9 A, R_DS(on) = 0.38 Ω, Q_g = 22 nC, TO-247 package	Lower Q_g improves switching speed but larger TO-247 footprint increases parasitic inductance and layout area	Chosen when maximum thermal dissipation (>100 W) is required and board space permits larger through-hole package.

Compared with STP9NK60ZFP and IXTH9N60L2, SIHD9N60E-GE3 offers the best balance of low R_DS(on), moderate Q_g, and compact DPAK thermal performance-enabling higher power density in space-constrained telecom and server SMPS designs without sacrificing ruggedness.

Availability

SIHD9N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD9N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The E Series power MOSFETs-including SIHD9N60E-GE3-are engineered for high-efficiency, high-reliability switching in demanding hard-switched power conversion systems such as telecom rectifiers, server PSUs, and renewable energy inverters.

FAQ

What is the maximum continuous drain current rating for SIHD9N60E-GE3 at 100 °C case temperature?

The SIHD9N60E-GE3 has a continuous drain current rating of 6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be applied in thermal design calculations alongside R_thJC = 1.6 °C/W to ensure junction temperature remains below 150 °C.

Does SIHD9N60E-GE3 support logic-level gate drive?

No, SIHD9N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.5 V to 4.5 V, and it is characterized for full enhancement at V_GS = 10 V. Driving it with 5 V logic signals will result in significantly elevated R_DS(on) and unreliable switching; a dedicated 10–15 V gate driver is required for optimal performance of SIHD9N60E-GE3.

What is the significance of the "-GE3" suffix in SIHD9N60E-GE3?

"-GE3" denotes Vishay's lead (Pb)-free and halogen-free packaging variant compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). It indicates the device uses matte tin plating on leads and meets IPC/JEDEC J-STD-006 solderability requirements, making SIHD9N60E-GE3 suitable for lead-free reflow assembly without special handling.

Can SIHD9N60E-GE3 replace older SiHD9N60E devices in existing designs?

Yes, SIHD9N60E-GE3 is a direct drop-in replacement for the legacy SiHD9N60E (non-GE3) version. Electrical specifications, pinout, package dimensions, and thermal characteristics are identical; only the plating and environmental compliance differ. No PCB or schematic changes are needed when upgrading to SIHD9N60E-GE3 in production or repair scenarios.

How does the body diode performance of SIHD9N60E-GE3 compare to standard FRDs in PFC applications?

The SIHD9N60E-GE3 body diode exhibits t_rr = 207 ns and Q_rr = 2.2 μC at T_J = 25 °C, which is competitive with fast recovery diodes in medium-frequency PFC. While not optimized as a dedicated diode, its soft recovery characteristic and low I_RRM = 20 A make SIHD9N60E-GE3 viable for discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC where synchronous rectification isn't used.

SIHD9N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 368mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 778 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD9N60E-GE3 FAQ

1.How can I place an order for SIHD9N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD9N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD9N60E-GE3 reliable?

The price and inventory of SIHD9N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD9N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD9N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD9N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD9N60E-GE3?

SIHD9N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD9N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD9N60E-GE3?

For technical support, including SIHD9N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD9N60E-GE3 requirements.

6.How does Aetrix verify that SIHD9N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD9N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD9N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD9N60E-GE3?

All SIHD9N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD9N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD9N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHD9N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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