Vishay Siliconix SIHF068N60EF-GE3

Overview

SIHF068N60EF-GE3 from Vishay Siliconix is a 600 V, 16 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring 0.059 Ω R_DS(on) at V_GS = 10 V, 77 nC total gate charge, and fast body diode with 120 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHF068N60EF-GE3 datasheet, SIHF068N60EF-GE3 pinout, SIHF068N60EF-GE3 application, or SIHF068N60EF-GE3 equivalent, this page provides verified electrical parameters, thermal resistance (R_thJC = 3.2 °C/W), avalanche energy rating (E_AS = 226 mJ), body diode performance (V_SD = 1.2 V, Q_rr = 0.8–1.6 μC), and real-world design implications for high-voltage power conversion.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for high-voltage switching with low figure-of-merit (R_DS(on) × Q_g). Its fast intrinsic body diode supports ZVS-capable topologies and reduces snubber losses in bridge configurations.

The device is rated for repetitive unclamped inductive switching (UIS) up to 226 mJ and exhibits controlled dV/dt immunity (100 V/ns at T_J = 125 °C), enabling robust operation in noisy industrial environments without external gate clamping.

Key Specifications

Pinout & Package

TO-220 FULLPAK package with isolated drain tab, standard 3-pin through-hole mounting, and lead (Pb)-free/halogen-free construction. Exposed copper drain pad enables direct heatsink attachment and low thermal resistance path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW68N60DM6 and IXFH68N60P3, SIHF068N60EF-GE3 offers the best balance of low R_DS(on), moderate Q_g, certified UIS ruggedness, and compact TO-220 FULLPAK form factor-making it optimal for space-constrained, high-efficiency 600 V power stages where self-protected switching is critical.

Availability

SIHF068N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for SIHF068N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EF Series targets high-voltage power conversion applications demanding low loss, fast switching, and ruggedness-designed specifically for next-generation PFC, SMPS, and inverter systems operating up to 600 V.

FAQ

What is the maximum continuous drain current rating for SIHF068N60EF-GE3 at 100 °C case temperature?

The SIHF068N60EF-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature. At 25 °C case temperature, the rating rises to 16 A, with linear derating at 0.31 W/°C between these points. SIHF068N60EF-GE3 must be mounted on an adequately sized heatsink to maintain case temperature within spec.

Does SIHF068N60EF-GE3 have a fully characterized fast body diode, and what are its key parameters?

Yes, SIHF068N60EF-GE3 features a fully characterized fast body diode with t_rr = 120–240 ns, Q_rr = 0.8–1.6 μC, and V_SD = 1.2 V at I_S = 16 A and T_J = 25 °C. These values are measured under standardized conditions (dI/dt = 100 A/μs, V_R = 400 V) and enable reliable use in freewheeling, synchronous rectification, and resonant topologies. SIHF068N60EF-GE3's diode performance is integral to its EF-series designation and validated across temperature.

What is the gate threshold voltage range for SIHF068N60EF-GE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for SIHF068N60EF-GE3 is specified as 3–5 V at I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing noise immunity against false turn-on. To achieve full enhancement and low R_DS(on), SIHF068N60EF-GE3 requires V_GS ≥ 10 V; operation below 5 V results in significantly increased on-resistance and conduction loss. SIHF068N60EF-GE3 is not a logic-level device.

Can SIHF068N60EF-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHF068N60EF-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ under defined test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4 A). This rating is guaranteed and tested per JEDEC standards, allowing SIHF068N60EF-GE3 to safely absorb inductive energy without external clamping in PFC chokes and motor drive circuits.

What is the thermal resistance from junction to case (R_thJC) for SIHF068N60EF-GE3, and how does it impact heatsink selection?

The junction-to-case thermal resistance (R_thJC) for SIHF068N60EF-GE3 is 3.2 °C/W, measured from die junction to the exposed drain tab surface. This low value enables efficient heat transfer to the heatsink when mounted with proper thermal interface material. For example, at 39 W maximum power dissipation, a 3.2 °C/W R_thJC plus 1.0 °C/W heatsink resistance yields a 134 °C junction rise-within the 150 °C limit. SIHF068N60EF-GE3's R_thJC is confirmed in the Thermal Resistance Ratings table of its datasheet.