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Vishay Siliconix SIHF640S-GE3
- Part No.:
- SIHF640S-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHF640S-GE3.pdf
- Description:
- MOSFET N-CH 200V 18A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:940
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Product details
Overview
SIHF640S-GE3 from Vishay Siliconix is a 200 V, 18 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.18 Ω RDS(on) at VGS = 10 V, 70 nC total gate charge, and full avalanche rating - designed for high-current DC-DC converters, motor drive half-bridges, and industrial power supplies.
For engineers reviewing the SIHF640S-GE3 datasheet, SIHF640S-GE3 pinout, SIHF640S-GE3 application, or SIHF640S-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, real-world switching behavior (td(on) = 14 ns, tf = 36 ns), body diode recovery specs (trr = 300–610 ns), and direct alternative part comparisons for robust power stage design.
Technical Context
This MOSFET employs third-generation planar silicon technology optimized for fast switching and rugged unclamped inductive switching (UIS). Its 1.0 °C/W junction-to-case thermal resistance enables 130 W continuous dissipation at TC = 25 °C, while dynamic dV/dt rating of 5.0 V/ns supports stable operation in noisy high-speed switching environments.
The device integrates a low-Qgd/Qg ratio (39/70 ≈ 56%) to minimize Miller-induced turn-off delay, and its body diode exhibits 2.0 V forward voltage at 18 A with controlled reverse recovery (Qrr = 3.4–7.1 μC), making it suitable for synchronous rectification and freewheeling paths where diode stress must be managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 150 V bus designs with 33% safety margin against transients |
| RDS(on) | 0.18 Ω @ VGS = 10 V - yields ≤ 36 W conduction loss at 18 A DC, enabling compact heatsinking |
| Qg | 70 nC - determines gate driver current requirement (≥ 140 mA avg. for 500 ns turn-on) |
| EAS | 580 mJ - enables reliable operation in unclamped inductive load switching without external snubbers |
| tr/tf | 51 ns / 36 ns - defines minimum practical PWM frequency (≈ 2 MHz max for <10% dead-time loss) |
| TJ Range | –55 to +150 °C - qualified for under-hood automotive and industrial ambient conditions |
| VGS(th) | 2.0–4.0 V - ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad on underside; 3-pin configuration optimized for high-current PCB routing and thermal transfer to copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Drain) | Drain (D) | Electrically and thermally connected to metal tab - must be soldered to large copper area for thermal management |
| Pin 2 (Source) | Source (S) | Reference node for gate drive; carries full load current and body diode return path |
| Pin 3 (Gate) | Gate (G) | High-impedance control input; requires low-inductance gate loop layout to suppress ringing during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| Surface-mount D2PAK package | Enables automated assembly and achieves 2.0 W power dissipation in SMT layout without through-hole mounting |
| Fully avalanche-rated | Guarantees single-pulse energy handling up to 580 mJ without failure - eliminates need for external clamping circuits |
| Dynamic dV/dt rating | 5.0 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in bridge configurations |
| 150 °C operating temperature | Supports sealed enclosure designs and high-ambient industrial environments without derating penalties |
| Low-profile compatible variant | Same die used in SiHF640L (I2PAK) - allows mechanical interchangeability where height constraints exist |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: High-side switch in 48 V BLDC motor inverter stage driving 10–20 A peak phase current. IC Role / Device Role / Timing Role: Power switching element controlling current flow into motor winding; operates at 20–50 kHz with precise dead-time control. Use Value: Low RDS(on) minimizes I²R losses during conduction; fast fall time (36 ns) reduces switching loss and EMI generation in high-frequency PWM. |
Use Scenario: Lower-side synchronous rectifier in 12 V → 3.3 V, 15 A point-of-load converter for telecom baseband cards. IC Role / Device Role / Timing Role: Active freewheeling switch replacing Schottky diode; driven complementary to upper MOSFET with tight timing alignment. Use Value: Body diode trr (300–610 ns) and Qrr (3.4–7.1 μC) are tightly specified to prevent shoot-through and reduce reverse recovery spikes. |
| Industrial AC-DC Front-End | UPS Inverter Stage |
Use Scenario: Switching element in active PFC boost stage handling 230 V AC input with 8 A RMS inductor current. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive avalanche stress during zero-crossing transitions. Use Value: Rated EAS = 580 mJ and IAR = 18 A ensure reliable operation under worst-case line surge and overload conditions. |
Use Scenario: Output H-bridge switch in 1 kVA online UPS delivering pure sine-wave 230 V AC from 48 V DC bus. IC Role / Device Role / Timing Role: High-current, high-voltage switching device operating in hard-switched full-bridge topology at 16–20 kHz. Use Value: 200 V VDS rating provides margin above 48 V × √2 × 2 = 136 V reflected voltage; 130 W PD supports forced-air-cooled thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600 V VDS, 0.30 Ω RDS(on), TO-220FP package, lower Qg (45 nC) | Better voltage margin but higher conduction loss; unsuitable for space-constrained SMT layouts | Select when >400 V transient immunity is required and board area permits through-hole mounting. |
| IRF640NPbF | Same die, TO-220 package, Pb-containing terminations, identical RDS(on) and Qg | No thermal pad; 62 W PD (vs. 130 W) limits use in high-duty-cycle applications | Choose only for legacy through-hole designs where D2PAK rework is not feasible and thermal budget allows. |
Compared with STP20NM60FD and IRF640NPbF, SIHF640S-GE3 uniquely combines D2PAK thermal performance (130 W), surface-mount compatibility, and 200 V/18 A rating - making it optimal for high-density, high-efficiency industrial power stages where both layout efficiency and ruggedness are critical.
Availability
SIHF640S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supply (UPS) inverters requiring stable component supply across multi-year production cycles.
Supply support for SIHF640S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.
The SIHF640S-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family engineered for fast switching, avalanche ruggedness, and cost-effective high-current power conversion in space-constrained systems.
FAQ
What is the maximum continuous drain current for SIHF640S-GE3 at 100 °C case temperature?
The SIHF640S-GE3 supports 11 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation - designers must ensure adequate PCB copper area and airflow to maintain TC ≤ 100 °C for full 11 A capability. The SIHF640S-GE3 datasheet confirms this value under test condition TC = 100 °C.
Does SIHF640S-GE3 have a fully rated avalanche capability, and what is the single-pulse energy limit?
Yes, SIHF640S-GE3 is fully avalanche rated with a guaranteed single-pulse avalanche energy (EAS) of 580 mJ under standardized test conditions (VDD = 50 V, IAS = 18 A, TJ starting at 25 °C). This rating is validated per JEDEC JESD24-1 and enables robust operation in inductive switching applications without external protection. The SIHF640S-GE3 specification sheet explicitly lists EAS = 580 mJ in the Absolute Maximum Ratings table.
What is the gate threshold voltage range for SIHF640S-GE3, and how does it affect logic-level drive compatibility?
The SIHF640S-GE3 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO outputs. This wide threshold window accommodates process variation while maintaining noise immunity - no level-shifting circuitry is needed for direct logic-level drive. The SIHF640S-GE3 datasheet specifies this range in the Static Characteristics section.
How does the body diode performance of SIHF640S-GE3 compare to standard rectifiers in freewheeling applications?
The SIHF640S-GE3 body diode exhibits VSD = 2.0 V at IS = 18 A and TJ = 25 °C, with reverse recovery time trr = 300–610 ns and Qrr = 3.4–7.1 μC. While forward drop is higher than Schottky diodes, its controlled recovery characteristics reduce voltage spikes and EMI compared to standard PN diodes - making it suitable for synchronous rectification where gate control is available. These values are measured and published for SIHF640S-GE3 in the Drain-Source Body Diode Characteristics table.
Is SIHF640S-GE3 RoHS-compliant, and what does the "-GE3" suffix indicate?
Yes, SIHF640S-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU. The "-GE3" suffix denotes Vishay's standard green packaging: matte tin-plated leads, halogen-free molding compound, and tape-and-reel packaging per EIA-481. This marking is confirmed in the Ordering Information table of the SIHF640S-GE3 datasheet and aligns with Vishay's material categorization document 99912.
SIHF640S-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 130W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHF640S-GE3 FAQ
1.How can I place an order for SIHF640S-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHF640S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHF640S-GE3 reliable?
The price and inventory of SIHF640S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF640S-GE3 is usually 5 days.
3.What payment methods are accepted for SIHF640S-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF640S-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHF640S-GE3?
SIHF640S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHF640S-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHF640S-GE3?
For technical support, including SIHF640S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF640S-GE3 requirements.
6.How does Aetrix verify that SIHF640S-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHF640S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF640S-GE3 meets industry standards.
7.What is the process for return or replacement of SIHF640S-GE3?
All SIHF640S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF640S-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHF640S-GE3 part is unused and in its original packaging.
Return procedure for SIHF640S-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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