Vishay Siliconix SIHF7N60E-GE3

Overview

SIHF7N60E-GE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS and PFC stages. It features R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g ≤ 40 nC, and avalanche-rated (E_AS = 43 mJ), enabling efficient hard-switched operation in telecom rectifiers and solar inverters.

For engineers reviewing the SIHF7N60E-GE3 datasheet, SIHF7N60E-GE3 pinout, SIHF7N60E-GE3 application, or SIHF7N60E-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced drive loss, TO-220 FULLPAK thermal performance (R_thJC = 4.0 °C/W), and body diode recovery characteristics (t_rr = 230 ns, Q_rr = 1.9 μC) critical for ZVS/ZCS design validation.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell pitch and gate oxide thickness to achieve balanced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures robust noise immunity while supporting standard 10 V gate drivers.

The device integrates an ultra-low-Q_gd/Q_g ratio (9/40 nC) and low C_iss (680 pF), reducing Miller effect and improving dv/dt immunity (70 V/ns). Its body diode is rated for repetitive IS = 7 A and exhibits controlled reverse recovery to minimize commutation stress in bridge-leg configurations.

Key Specifications

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper on backside), 3-pin through-hole configuration. Thermal resistance from junction to case (drain) is 4.0 °C/W; case-to-ambient depends on heatsink interface and PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP7NK60ZFP and IXFH7N60X3, SIHF7N60E-GE3 delivers optimal balance of low gate charge, TO-220 FULLPAK thermal efficiency, and cost-effective packaging - making it ideal for space-constrained 20–30 W/in³ telecom and industrial power supplies where board area and heatsink volume are constrained.

Availability

SIHF7N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHF7N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHF7N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in offline AC/DC conversion, PFC, and renewable energy systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHF7N60E-GE3 at 100 °C case temperature?

The SIHF7N60E-GE3 has a maximum continuous drain current (I_D) rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 4.0 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHF7N60E-GE3 must be mounted on an adequately sized heatsink to maintain this rating under sustained load.

Does SIHF7N60E-GE3 have avalanche capability, and how is it rated?

Yes, the SIHF7N60E-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 43 mJ, tested per JEDEC standard JESD24-1. This rating is measured at V_DD = 50 V, starting T_J = 25 °C, L = 13.8 mH, R_g = 25 Ω, and I_AS = 2.5 A. The SIHF7N60E-GE3 can safely absorb transient inductive energy without failure, making it suitable for PFC and flyback topologies where voltage spikes occur during turn-off.

What is the gate threshold voltage range for SIHF7N60E-GE3, and why does it matter for drive circuit design?

The SIHF7N60E-GE3 has a gate threshold voltage (V_GS(th)) range of 2 V to 4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious gate voltage coupling. Because the SIHF7N60E-GE3 is not a logic-level device, it requires ≥8 V minimum gate drive to achieve full R_DS(on) specification; using insufficient gate voltage will increase conduction losses and thermal stress on the SIHF7N60E-GE3.

How does the body diode performance of SIHF7N60E-GE3 compare to standard recovery diodes in bridge configurations?

The SIHF7N60E-GE3 body diode has a reverse recovery time (t_rr) of 230 ns and reverse recovery charge (Q_rr) of 1.9 μC at T_J = 25 °C, IS = 3.5 A, dI/dt = 100 A/μs, and VR = 20 V. These values are significantly faster and lower than general-purpose rectifiers, reducing commutation loss and EMI in synchronous rectification and half-bridge topologies. When used in freewheeling paths, the SIHF7N60E-GE3 body diode enables higher switching frequencies without excessive heating, unlike slower diodes that would require external Schottky replacements.

Is SIHF7N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHF7N60E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its TO-220 FULLPAK package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. The SIHF7N60E-GE3 may be processed using standard Pb-free reflow profiles (e.g., IPC/JEDEC J-STD-020 Class 3a), provided preheat and soak times respect thermal limits to avoid package delamination or bond wire damage.