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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFBC40AS-GE3

Name: SIHFBC40AS-GE3
Brand: Vishay Siliconix
SKU: SIHFBC40AS-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFBC40AS-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHFBC40AS-GE3.pdf

Description:: MOSFET N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFBC40AS-GE3 from Vishay Siliconix is a 600 V, 6.2 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 42 nC total gate charge, and 570 mJ single-pulse avalanche energy. It serves as a high-voltage switching element in offline SMPS topologies including single-transistor forward converters.

For engineers reviewing the SIHFBC40AS-GE3 datasheet, SIHFBC40AS-GE3 pinout, SIHFBC40AS-GE3 application, or SIHFBC40AS-GE3 equivalent, key selection criteria include its 600 V V_DS, rugged dV/dt capability (6.0 V/ns), low Q_gd/Q_g ratio for hard-switching stability, and fully characterized C_{oss eff.} (48 pF) for resonant design validation.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage unclamped inductive switching. Its gate structure delivers low Q_g (42 nC) with balanced Q_gs/Q_gd (10 nC / 20 nC), enabling clean turn-on/turn-off transitions under 300 V bus conditions with R_g = 9.1 Ω.

It integrates a robust body diode with t_rr = 431–647 ns and Q_rr = 1.8–2.8 μC at I_F = 6.2 A, dI/dt = 100 A/μs, and supports repetitive avalanche operation up to I_AR = 6.2 A - critical for overvoltage protection in flyback and forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC mains-derived DC bus with ≥50 % safety margin
R_DS(on)	1.2 Ω @ V_GS = 10 V - enables ≤4.5 W conduction loss at 6.2 A continuous drain current
Q_g	42 nC - determines gate driver power requirement and switching speed control
E_AS	570 mJ - specifies maximum single-event inductive energy absorption without failure
C_{oss eff.}	48 pF - defines timing of voltage rise during ZVS/ZCS transitions in resonant topologies
dV/dt rating	6.0 V/ns - ensures reliable operation under fast transient voltage stress in high-noise SMPS environments
t_r/t_f	23 ns / 18 ns - sets minimum practical switching period for >100 kHz operation with low overlap loss

Pinout & Package

D2PAK (TO-263) package with exposed drain tab (pin 2) for thermal and electrical connection; molded plastic body with 3 external terminals; JEDEC-compliant outline per document 73397.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires 10 V drive for full enhancement; max ±30 V rating
D	Drain	Main high-side power terminal; electrically and thermally connected to exposed copper tab
S	Source	Reference node for gate drive and current sensing; ties to power ground in most topologies

Key Features

Feature	Design Value
Low Q_g (42 nC)	Reduces gate driver complexity and power loss - enables use of low-cost bipolar or logic-level drivers
Characterized C_{oss eff.} (48 pF)	Enables accurate prediction of turn-off delay and snubber sizing in hard-switched and quasi-resonant converters
Avalanche-rated (E_AS = 570 mJ)	Eliminates need for external clamping in cost-sensitive offline SMPS where transformer leakage inductance causes voltage spikes
Body diode t_rr = 431–647 ns	Minimizes reverse recovery losses and EMI in synchronous rectification or freewheeling paths
Peak dV/dt = 6.0 V/ns	Prevents false turn-on during high dv/dt transients in high-frequency bridge configurations

Applications

AC-DC Power Adapter	Industrial UPS Inverter Stage
Use Scenario: 65 W universal-input adapter using single-transistor forward topology with 400 V DC bus. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer via transformer; operates at 65–100 kHz with 50 % duty cycle. Use Value: 1.2 Ω R_DS(on) limits conduction loss to <4.5 W; 570 mJ E_AS absorbs leakage spike without snubber.	Use Scenario: 1 kVA online UPS inverter stage converting 380 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Half-bridge high-side switch in 16 kHz PWM inverter; handles 6.2 A RMS load current. Use Value: 6.0 V/ns dV/dt rating prevents spurious turn-on during bus commutation; rugged body diode supports bidirectional current flow.
Server PSU Primary Switch	LED Driver Flyback Converter
Use Scenario: 80 PLUS Titanium server PSU using active-clamp forward topology with 400 V input. IC Role / Device Role / Timing Role: Main power switch handling peak currents up to 25 A (IDM); gated at 200–300 kHz. Use Value: Low Q_gd/Q_g ratio (20/42) improves switching efficiency and reduces Miller-induced oscillation risk.	Use Scenario: 150 W isolated LED driver with universal AC input and constant-current output. IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback; rated for 600 V blocking. Use Value: Fully characterized C_oss and Q_rr allow precise calculation of snubber losses and EMI filter requirements.

AC-DC Power Adapter

Industrial UPS Inverter Stage

Use Scenario: 65 W universal-input adapter using single-transistor forward topology with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer via transformer; operates at 65–100 kHz with 50 % duty cycle.

Use Value: 1.2 Ω R_DS(on) limits conduction loss to <4.5 W; 570 mJ E_AS absorbs leakage spike without snubber.

Use Scenario: 1 kVA online UPS inverter stage converting 380 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge high-side switch in 16 kHz PWM inverter; handles 6.2 A RMS load current.

Use Value: 6.0 V/ns dV/dt rating prevents spurious turn-on during bus commutation; rugged body diode supports bidirectional current flow.

Server PSU Primary Switch

LED Driver Flyback Converter

Use Scenario: 80 PLUS Titanium server PSU using active-clamp forward topology with 400 V input.

IC Role / Device Role / Timing Role: Main power switch handling peak currents up to 25 A (IDM); gated at 200–300 kHz.

Use Value: Low Q_gd/Q_g ratio (20/42) improves switching efficiency and reduces Miller-induced oscillation risk.

Use Scenario: 150 W isolated LED driver with universal AC input and constant-current output.

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback; rated for 600 V blocking.

Use Value: Fully characterized C_oss and Q_rr allow precise calculation of snubber losses and EMI filter requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, DPAK package (smaller thermal mass)	Limited to lower-power SMPS due to higher R_thJA (62 °C/W vs. 40 °C/W)	Preferred where board space is constrained and power <50 W; requires enhanced heatsinking for same current
IXFH6N60P	600 V, 6.3 A, R_DS(on) = 1.4 Ω, Q_g = 45 nC, TO-247 package (larger footprint)	Better thermal performance (R_thJC = 0.83 °C/W) but higher gate charge and cost	Selected when junction temperature must stay <125 °C under sustained 6.2 A load without forced air

Compared with STP6NK60ZFP and IXFH6N60P, the SIHFBC40AS-GE3 offers optimal balance of D2PAK thermal capability (R_thJC = 1.0 °C/W), moderate Q_g, and industry-standard footprint - making it ideal for mid-power industrial SMPS where layout density and thermal reliability are both critical.

Availability

SIHFBC40AS-GE3 is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply across production lifecycles.

Supply support for SIHFBC40AS-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The SIHFBC40AS-GE3 belongs to Vishay's high-voltage planar MOSFET product line, engineered for robust operation in offline AC-DC conversion, UPS systems, and industrial motor drives where avalanche tolerance and dV/dt immunity are essential.

FAQ

What is the maximum continuous drain current for SIHFBC40AS-GE3 at 100 °C case temperature?

The SIHFBC40AS-GE3 supports 3.9 A continuous drain current at T_C = 100 °C, derated linearly from 6.2 A at 25 °C using a 1.0 W/°C factor. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal resistance R_thJC = 1.0 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C to sustain this current in continuous operation.

Does SIHFBC40AS-GE3 have a fully characterized body diode?

Yes, the SIHFBC40AS-GE3 includes full characterization of its integral body diode: t_rr = 431–647 ns, Q_rr = 1.8–2.8 μC, and V_SD = 1.5 V at I_S = 6.2 A and T_J = 25 °C. These parameters are measured under standardized conditions (dI/dt = 100 A/μs) and appear in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Is SIHFBC40AS-GE3 RoHS-compliant and halogen-free?

Yes, SIHFBC40AS-GE3 is both RoHS-compliant and halogen-free, as indicated by the "-GE3" suffix in the ordering code and confirmed in the Ordering Information table. Vishay categorizes this part under material compliance level "Lead (Pb)-free and halogen-free", meeting JEDEC JS709A and IEC 61249-2-21 standards.

What is the effective output capacitance (C_{oss eff.}) of SIHFBC40AS-GE3 and why does it matter?

The SIHFBC40AS-GE3 has C_{oss eff.} = 48 pF, defined as the fixed capacitance yielding the same V_DS charging time as actual C_oss while rising from 0 % to 80 % of V_DS. This parameter is critical for designing zero-voltage switching (ZVS) circuits and calculating turn-off losses in resonant converters - unlike typical C_oss values, C_{oss eff.} reflects real-world dynamic behavior.

Can SIHFBC40AS-GE3 be used in avalanche mode repeatedly?

Yes, the SIHFBC40AS-GE3 is rated for repetitive avalanche operation with I_AR = 6.2 A and E_AR = 13 mJ per pulse, provided pulse width and duty cycle remain within limits defined in Figure 11 and Note "a" of the datasheet. This capability allows safe operation in circuits with unclamped inductive loads without external snubbers - a key advantage over non-avalanche-rated MOSFETs.

SIHFBC40AS-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1036 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHFBC40AS-GE3 FAQ

1.How can I place an order for SIHFBC40AS-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFBC40AS-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFBC40AS-GE3 reliable?

The price and inventory of SIHFBC40AS-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFBC40AS-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFBC40AS-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFBC40AS-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFBC40AS-GE3?

SIHFBC40AS-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFBC40AS-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFBC40AS-GE3?

For technical support, including SIHFBC40AS-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFBC40AS-GE3 requirements.

6.How does Aetrix verify that SIHFBC40AS-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFBC40AS-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFBC40AS-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFBC40AS-GE3?

All SIHFBC40AS-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFBC40AS-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFBC40AS-GE3 part is unused and in its original packaging.

Return procedure for SIHFBC40AS-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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