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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFBE30S-GE3

Name: SIHFBE30S-GE3
Brand: Vishay Siliconix
SKU: SIHFBE30S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFBE30S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHFBE30S-GE3.pdf

Description:: MOSFET N-CHANNEL 800V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFBE30S-GE3 from Vishay Siliconix is a 800 V, 4.1 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback and snubberless AC-DC power supplies.

For engineers reviewing the SIHFBE30S-GE3 datasheet, SIHFBE30S-GE3 pinout, SIHFBE30S-GE3 application, or SIHFBE30S-GE3 equivalent, this device is evaluated for high-reliability offline SMPS, industrial motor control inverters, and solid-state relay drivers where ruggedness under unclamped inductive switching and fast dV/dt immunity are critical.

Technical Context

This third-generation planar vertical MOSFET uses ruggedized die construction with optimized cell layout to achieve stable 800 V breakdown while maintaining low gate charge (78 nC) and fast switching (td(on) = 12 ns, tf = 30 ns). Its 1.0 °C/W junction-to-case thermal resistance supports high-power operation when mounted on heatsinks.

The device integrates a fast-recovery body diode (trr = 480–720 ns, Q_rr = 1.8–2.7 nC) and is rated for peak diode recovery dV/dt up to 2.0 V/ns-enabling robust performance in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains rectified voltage in universal-input 85–265 V_AC offline converters.
R_DS(on) @ V_GS = 10 V	3.0 Ω - Enables <4.1 A continuous conduction at T_C = 100 °C with ≤125 W dissipation.
Q_g	78 nC - Determines gate drive power requirement; compatible with standard 12 V PWM controllers.
E_AS	260 mJ - Supports unclamped inductive switching up to I_AS = 4.1 A without failure.
trr / Q_rr	480–720 ns / 1.8–2.7 nC - Limits switching loss and EMI during diode commutation in bridge-legs.
dV/dt Rating	2.0 V/ns - Resists false turn-on in high-noise environments like industrial motor drives.
T_J Range	−55 to +150 °C - Qualified for extended temperature operation in sealed enclosures or outdoor equipment.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated drain tab (pin 2), gate (pin 1), and source (pin 3); thermal pad on underside requires solder paste stencil design per AN826 recommended footprint (0.420" × 0.355").

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; 2.0–4.0 V threshold enables direct drive from microcontrollers or optocouplers with ≥10 V gate bias.
Pin 2 (D)	Drain	Main high-side switching node; electrically connected to exposed metal tab-must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return path and gate reference; connects to PCB ground plane; internal source inductance (L_S = 7.5 nH) affects switching ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for unlimited 13 mJ repetitive avalanche pulses-eliminates need for external clamping in overload-protected SMPS designs.
Dynamic dV/dt immunity	2.0 V/ns rating ensures reliable blocking during fast transients in industrial noise environments without spurious turn-on.
Fast switching with low Q_g/Q_gd	Q_gd = 45 nC (58% of Q_g) enables tight control of Miller plateau timing and reduces cross-conduction risk in half-bridge configurations.
Ruggedized planar die structure	Third-generation silicon process improves short-circuit withstand time and reduces parameter drift over 150 °C junction operation.
RoHS-compliant, halogen-free	SiHFBE30S-GE3 meets JEDEC J-STD-609A Class 1 moisture sensitivity and IPC/JEDEC J-STD-020D reflow profile requirements.

Applications

Industrial AC-DC Power Supplies	High-Voltage DC-DC Converters
Use Scenario: Universal-input (85–265 V_AC) offline flyback converter delivering 24 V/2 A for PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with ZVS-assisted startup. Use Value: 800 V V_DS margin prevents breakdown during line surges; 260 mJ E_AS handles transformer leakage energy without snubber.	Use Scenario: Isolated 400 V_DC input to 48 V_DC output resonant LLC converter in telecom rectifier systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier driver in secondary-side active clamp circuit. Use Value: Low Q_rr (1.8–2.7 nC) minimizes reverse recovery loss; 2.0 V/ns dV/dt rating suppresses false triggering during high-frequency resonance.
Motor Drive Protection Circuits	Solid-State Relay Modules
Use Scenario: Overvoltage crowbar protection for 3-phase 400 V_AC induction motor drives during regenerative braking events. IC Role / Device Role / Timing Role: Fast-acting shunt switch triggered by voltage comparator to clamp bus overvoltage. Use Value: Repetitive avalanche capability (13 mJ) allows repeated fault clearing without degradation; 4.1 A I_AR sustains current until upstream fuse opens.	Use Scenario: 120/240 V_AC load switching in DIN-rail mounted SSRs for HVAC zone control. IC Role / Device Role / Timing Role: Main isolation switch replacing electromechanical relay; driven via optocoupler with 10 V gate bias. Use Value: 3.0 Ω R_DS(on) limits conduction loss to <5 W at 4.1 A; TO-263 package enables >100 kcycles mechanical life vs. contact wear-out.

Industrial AC-DC Power Supplies

High-Voltage DC-DC Converters

Use Scenario: Universal-input (85–265 V_AC) offline flyback converter delivering 24 V/2 A for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with ZVS-assisted startup.

Use Value: 800 V V_DS margin prevents breakdown during line surges; 260 mJ E_AS handles transformer leakage energy without snubber.

Use Scenario: Isolated 400 V_DC input to 48 V_DC output resonant LLC converter in telecom rectifier systems.

IC Role / Device Role / Timing Role: High-side synchronous rectifier driver in secondary-side active clamp circuit.

Use Value: Low Q_rr (1.8–2.7 nC) minimizes reverse recovery loss; 2.0 V/ns dV/dt rating suppresses false triggering during high-frequency resonance.

Motor Drive Protection Circuits

Solid-State Relay Modules

Use Scenario: Overvoltage crowbar protection for 3-phase 400 V_AC induction motor drives during regenerative braking events.

IC Role / Device Role / Timing Role: Fast-acting shunt switch triggered by voltage comparator to clamp bus overvoltage.

Use Value: Repetitive avalanche capability (13 mJ) allows repeated fault clearing without degradation; 4.1 A I_AR sustains current until upstream fuse opens.

Use Scenario: 120/240 V_AC load switching in DIN-rail mounted SSRs for HVAC zone control.

IC Role / Device Role / Timing Role: Main isolation switch replacing electromechanical relay; driven via optocoupler with 10 V gate bias.

Use Value: 3.0 Ω R_DS(on) limits conduction loss to <5 W at 4.1 A; TO-263 package enables >100 kcycles mechanical life vs. contact wear-out.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.2 A, R_DS(on) = 1.2 Ω, Q_g = 65 nC, SuperMESH™ process	Higher current rating but lower avalanche energy (E_AS = 120 mJ vs. 260 mJ)	Preferred where higher continuous current is needed and avalanche stress is limited; not drop-in due to different gate threshold (3–5 V).
FQP8N80C	800 V, 7.5 A, R_DS(on) = 1.1 Ω, Q_g = 72 nC, planar process	No specified repetitive avalanche rating; trr = 550 ns, Q_rr = 3.2 nC	Lower cost alternative for non-avalanche-critical applications; requires external snubber in inductive switching.

Compared with STP8NK80ZFP and FQP8N80C, SIHFBE30S-GE3 offers superior unclamped inductive ruggedness and tighter dV/dt immunity-making it the preferred choice for safety-critical or high-reliability offline power stages where fault energy must be absorbed internally.

Availability

SIHFBE30S-GE3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage DC-DC converters, and motor drive protection circuits requiring stable component supply across long production lifecycles.

Supply support for SIHFBE30S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The SIHFBE30S-GE3 belongs to Vishay's third-generation high-voltage planar MOSFET family-engineered specifically for rugged offline switching in space-constrained, thermally aggressive environments.

FAQ

What is the maximum continuous drain current for SIHFBE30S-GE3 at 100 °C case temperature?

The SIHFBE30S-GE3 supports 2.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its 1.0 °C/W R_thJC specification when properly heatsinked.

Does SIHFBE30S-GE3 have a specified repetitive avalanche energy rating?

Yes, SIHFBE30S-GE3 is rated for 13 mJ repetitive avalanche energy (E_AR) under pulsed conditions with pulse width limited by maximum junction temperature. This rating is confirmed in the Absolute Maximum Ratings table and validated per Figure 13a in the datasheet.

What is the gate threshold voltage range for SIHFBE30S-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHFBE30S-GE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 5 V and 10 V logic-level gate drivers without requiring level-shifting circuitry.

Can SIHFBE30S-GE3 be used in surface-mount reflow assembly?

Yes, SIHFBE30S-GE3 is qualified for lead (Pb)-free reflow per JEDEC J-STD-020D, with peak temperature up to 260 °C for 30 seconds. Its D2PAK package requires adherence to Vishay's recommended pad layout (AN826) and thermal relief design to ensure void-free solder joint formation on the drain tab.

What is the typical body diode reverse recovery time for SIHFBE30S-GE3?

The typical body diode reverse recovery time (t_rr) for SIHFBE30S-GE3 is 480 ns, with a maximum of 720 ns, measured at T_J = 25 °C, I_F = 4.1 A, and dI/dt = 100 A/μs. This value is critical for minimizing commutation loss in synchronous rectification and half-bridge topologies.

SIHFBE30S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHFBE30S-GE3 FAQ

1.How can I place an order for SIHFBE30S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFBE30S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFBE30S-GE3 reliable?

The price and inventory of SIHFBE30S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFBE30S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFBE30S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFBE30S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFBE30S-GE3?

SIHFBE30S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFBE30S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFBE30S-GE3?

For technical support, including SIHFBE30S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFBE30S-GE3 requirements.

6.How does Aetrix verify that SIHFBE30S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFBE30S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFBE30S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFBE30S-GE3?

All SIHFBE30S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFBE30S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFBE30S-GE3 part is unused and in its original packaging.

Return procedure for SIHFBE30S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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