Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFBE30STRL-GE3

Name: SIHFBE30STRL-GE3
Brand: Vishay Siliconix
SKU: SIHFBE30STRL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHFBE30STRL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHFBE30STRL-GE3.pdf

Description:: MOSFET N-CHANNEL 800V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHFBE30STRL-GE3 from Vishay Siliconix is an 800 V, 4.1 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback and snubberless AC-DC power supplies.

For engineers reviewing the SIHFBE30STRL-GE3 datasheet, SIHFBE30STRL-GE3 pinout, SIHFBE30STRL-GE3 application, or SIHFBE30STRL-GE3 equivalent, key selection criteria include its 800 V blocking capability, dV/dt ruggedness (2.0 V/ns), unclamped inductive switching performance (E_AS = 260 mJ), and RoHS-compliant lead-free/halogen-free construction per Vishay S21-0943-Rev. D.

Technical Context

This third-generation planar vertical power MOSFET uses a ruggedized die design optimized for high-voltage switching with low gate charge (Q_g = 78 nC) and fast recovery body diode (t_rr = 480–720 ns). Its dynamic dV/dt rating enables reliable operation in noisy high-side configurations without external snubbers.

The device supports repetitive avalanche operation up to I_AR = 4.1 A and E_AR = 13 mJ, with thermal resistance R_thJC = 1.0 °C/W enabling high-power dissipation when mounted on a heatsink. Internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are specified for accurate switching waveform modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input offline SMPS up to 380 V DC bus with safety margin.
R_DS(on) @ V_GS = 10 V	3.0 Ω - Enables <4.1 A continuous conduction at T_C = 25 °C with ≤125 W power dissipation.
Q_g	78 nC - Determines gate drive power requirement; compatible with standard 12 V PWM controllers driving ≤100 nC loads.
E_AS	260 mJ - Allows single-pulse unclamped inductive switching without failure under worst-case turn-off conditions.
t_rr	480–720 ns - Limits reverse recovery losses in hard-switched topologies; reduces voltage overshoot during diode commutation.
dV/dt Rating	2.0 V/ns - Ensures immunity to false turn-on in high-dV/dt environments such as PFC boost stages or motor drives.
I_D @ T_C = 100 °C	2.6 A - Defines usable current derating for compact heatsink designs operating at elevated ambient temperatures.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated drain tab (pin 2), gate (pin 1), and source (pin 3); thermal pad on underside requires solder paste stencil and reflow profile matching Vishay's recommended mounting torque (1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal; requires ≤±20 V drive; Q_gs = 9.6 nC and Q_gd = 45 nC define Miller plateau timing.
Pin 2 (D)	Drain	Main high-voltage power terminal; electrically connected to exposed copper tab for thermal and electrical conduction to PCB heatsink.
Pin 3 (S)	Source	Power return path and gate reference; internal source inductance L_S = 7.5 nH affects switching speed and ringing.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables robust operation in inductive load switching without external clamping; E_AR = 13 mJ at I_AR = 4.1 A.
Dynamic dV/dt rating	2.0 V/ns immunity prevents spurious turn-on in high-noise gate-drive layouts common in industrial inverters.
Fast switching with low Q_g	78 nC total gate charge enables <100 ns turn-off delay (t_d(off) = 82 ns) using 12 Ω gate resistor.
Body diode with controlled t_rr	480–720 ns reverse recovery time minimizes cross-conduction loss in synchronous rectification and LLC resonant converters.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609 Class 1 definition; no lead, bromine, or chlorine in packaging or terminations.

Applications

AC-DC Adapter Power Supply	Industrial Flyback Converter
Use Scenario: Universal-input (90–264 V_AC) 15–30 W offline adapter with primary-side regulation. IC Role / Device Role / Timing Role: High-voltage switching transistor in discontinuous conduction mode (DCM) flyback topology. Use Value: 800 V V_DS provides margin over 640 V reflected transients; 3.0 Ω R_DS(on) limits conduction loss at 4.1 A peak current.	Use Scenario: 48 V/2 A isolated output for PLC I/O modules requiring reinforced insulation. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley switching control. Use Value: Repetitive avalanche rating handles leakage inductance spikes; 2.0 V/ns dV/dt rating suppresses noise-induced false triggering.
Snubberless AC-DC Front-End	High-Voltage DC-DC Isolator
Use Scenario: 230 V_AC input, 400 V_DC output PFC-less offline supply for LED drivers. IC Role / Device Role / Timing Role: Main switching element in bridgeless buck-type AC-DC converter. Use Value: Unclamped inductive energy handling (E_AS = 260 mJ) eliminates need for RC snubber network, reducing BOM count and board space.	Use Scenario: 800 V input to 24 V isolated output DC-DC for EV battery management systems. IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward topology. Use Value: 1.0 °C/W R_thJC allows direct thermal coupling to chassis; 7.5 nH L_S enables precise gate drive timing simulation.

AC-DC Adapter Power Supply

Industrial Flyback Converter

Use Scenario: Universal-input (90–264 V_AC) 15–30 W offline adapter with primary-side regulation.

IC Role / Device Role / Timing Role: High-voltage switching transistor in discontinuous conduction mode (DCM) flyback topology.

Use Value: 800 V V_DS provides margin over 640 V reflected transients; 3.0 Ω R_DS(on) limits conduction loss at 4.1 A peak current.

Use Scenario: 48 V/2 A isolated output for PLC I/O modules requiring reinforced insulation.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley switching control.

Use Value: Repetitive avalanche rating handles leakage inductance spikes; 2.0 V/ns dV/dt rating suppresses noise-induced false triggering.

Snubberless AC-DC Front-End

High-Voltage DC-DC Isolator

Use Scenario: 230 V_AC input, 400 V_DC output PFC-less offline supply for LED drivers.

IC Role / Device Role / Timing Role: Main switching element in bridgeless buck-type AC-DC converter.

Use Value: Unclamped inductive energy handling (E_AS = 260 mJ) eliminates need for RC snubber network, reducing BOM count and board space.

Use Scenario: 800 V input to 24 V isolated output DC-DC for EV battery management systems.

IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward topology.

Use Value: 1.0 °C/W R_thJC allows direct thermal coupling to chassis; 7.5 nH L_S enables precise gate drive timing simulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.2 A, R_DS(on) = 1.2 Ω, Q_g = 60 nC, TO-220FP package	Higher current rating but larger R_DS(on) mismatch; requires different thermal layout due to through-hole mounting.	Preferred where higher continuous current (>4.1 A) and lower conduction loss are prioritized over surface-mount assembly.
FQP8N80C	800 V, 7.5 A, R_DS(on) = 1.15 Ω, Q_g = 65 nC, TO-220 package	Lower R_DS(on) and higher I_D, but lacks documented repetitive avalanche rating and dV/dt specification.	Applicable in non-avalanche-critical flyback designs where cost and availability outweigh ruggedness requirements.

Compared with STP8NK80ZFP and FQP8N80C, SIHFBE30STRL-GE3 offers verified dV/dt immunity and repetitive avalanche capability in a surface-mount D2PAK package-critical for compact, high-reliability industrial power supplies where layout space and transient robustness are constrained.

Availability

SIHFBE30STRL-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback converters, and snubberless AC-DC front-ends requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHFBE30STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The SIHFBE30STRL-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching in offline power conversion with emphasis on avalanche survivability, dV/dt immunity, and thermal efficiency.

FAQ

What is the maximum continuous drain current for SIHFBE30STRL-GE3 at 100 °C case temperature?

The SIHFBE30STRL-GE3 supports 2.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB copper area and heatsinking. The SIHFBE30STRL-GE3 datasheet (S21-0943-Rev. D) confirms this value under linear derating conditions.

Does SIHFBE30STRL-GE3 have a qualified repetitive avalanche rating?

Yes, SIHFBE30STRL-GE3 is explicitly rated for repetitive avalanche operation with E_AR = 13 mJ and I_AR = 4.1 A, per the Absolute Maximum Ratings table. This capability is validated per Vishay's test conditions (pulse width limited by junction temperature, see Figure 11), distinguishing it from non-avalanche-rated alternatives. The SIHFBE30STRL-GE3 product summary confirms this feature.

What is the gate threshold voltage range for SIHFBE30STRL-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHFBE30STRL-GE3 is 2.0 V to 4.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 5 V and 12 V gate drivers while avoiding unintended turn-on near ground potential. The SIHFBE30STRL-GE3 specifications table lists these min/max values directly.

Is SIHFBE30STRL-GE3 suitable for use in high-frequency switching applications above 100 kHz?

SIHFBE30STRL-GE3 supports high-frequency operation with t_d(on) = 12 ns, t_r = 33 ns, t_d(off) = 82 ns, and t_f = 30 ns at V_DD = 400 V and R_g = 12 Ω. Its 78 nC Q_g and 190 pF C_rss enable efficient switching up to 250 kHz in hard-switched topologies, provided gate drive strength and PCB layout minimize parasitic inductance. These parameters are confirmed in the SIHFBE30STRL-GE3 switching characteristics section.

What is the thermal resistance from junction to case for SIHFBE30STRL-GE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHFBE30STRL-GE3 is 1.0 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to the D2PAK package with proper mounting on a greased flat heatsink and is critical for calculating maximum allowable power dissipation at given case temperatures. The SIHFBE30STRL-GE3 datasheet specifies this parameter unambiguously.

SIHFBE30STRL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHFBE30STRL-GE3 FAQ

1.How can I place an order for SIHFBE30STRL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFBE30STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFBE30STRL-GE3 reliable?

The price and inventory of SIHFBE30STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFBE30STRL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFBE30STRL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFBE30STRL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFBE30STRL-GE3?

SIHFBE30STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFBE30STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFBE30STRL-GE3?

For technical support, including SIHFBE30STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFBE30STRL-GE3 requirements.

6.How does Aetrix verify that SIHFBE30STRL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFBE30STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFBE30STRL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFBE30STRL-GE3?

All SIHFBE30STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFBE30STRL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFBE30STRL-GE3 part is unused and in its original packaging.

Return procedure for SIHFBE30STRL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…