Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFL110TR-GE3

Name: SIHFL110TR-GE3
Brand: Vishay Siliconix
SKU: SIHFL110TR-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHFL110TR-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: SIHFL110TR-GE3.pdf

Description:: MOSFET N-CH 100V 1.5A SOT223

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHFL110TR-GE3 from Vishay Siliconix is a 100 V, 1.5 A N-channel surface-mount power MOSFET in SOT-223 package, with R_DS(on) = 0.54 Ω at V_GS = 10 V, Q_g = 8.3 nC, and repetitive avalanche rating of 0.31 mJ - used in low-power DC-DC converters and load switching circuits.

For engineers reviewing the SIHFL110TR-GE3 datasheet, SIHFL110TR-GE3 pinout, SIHFL110TR-GE3 application, or SIHFL110TR-GE3 equivalent, key selection criteria include its 100 V V_DS, thermal performance on PCB mount (R_thJA = 60 °C/W), fast switching (t_r = 16 ns), body diode recovery time (t_rr = 100–200 ns), and lead-free/halogen-free compliance per JEDEC TO-261AA.

Technical Context

This N-channel enhancement-mode MOSFET features a ruggedized third-generation silicon process optimized for fast switching and avalanche energy handling. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard logic-level drive, while dynamic dV/dt rating (5.5 V/ns) enables stable operation in noisy inductive environments.

The device integrates a monolithic body diode with t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC, and exhibits low internal inductance (L_D = 4.0 nH, L_S = 6.0 nH), supporting clean turn-on/turn-off waveforms in high-frequency switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transients in industrial and automotive auxiliary supplies
R_DS(on) max	0.54 Ω @ V_GS = 10 V - limits conduction loss to ≤0.77 W at 1.5 A continuous drain current
Q_g	8.3 nC - determines gate drive power requirement and switching speed with typical 24 Ω gate resistor
I_D continuous	1.5 A @ T_C = 25 °C - usable up to 0.96 A at 100 °C case temperature with linear derating
E_AS	150 mJ single-pulse - enables unclamped inductive switching without external snubbers in relay drivers
t_rr	100–200 ns - ensures minimal reverse recovery loss during synchronous rectification or H-bridge commutation

Pinout & Package

SOT-223 package (JEDEC TO-261AA), surface-mountable with exposed drain tab for heatsinking; thermal resistance R_thJC = 40 °C/W enables >1.25 W power dissipation on standard FR-4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level drive; 2.3 nC Q_gs enables fast turn-on with low gate current demand
D (Drain)	High-side current path	Connected to exposed tab - must be electrically isolated from heatsink unless referenced to same potential
S (Source)	Reference node	Common return for gate drive and load current; internal source inductance (6.0 nH) affects high-speed switching stability

Key Features

Feature	Design Value
Repetitive avalanche rated	Rated for 0.31 mJ per pulse (I_AR = 1.5 A), enabling robustness in inductive load switching without external protection
Dynamic dV/dt immunity	5.5 V/ns - suppresses false turn-on in high dv/dt environments such as motor drives and SMPS primary side
Low Q_gd/Q_g ratio	3.8/8.3 ≈ 46% - improves Miller immunity and reduces risk of shoot-through in half-bridge configurations
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912

Applications

Power Supply Load Switch	Low-Voltage DC Motor Driver
Use Scenario: Enable/disable 12–24 V rail to peripheral modules in industrial controllers or IoT gateways. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery with minimal quiescent current and fast response. Use Value: R_DS(on) = 0.54 Ω limits voltage drop to <1 V at 1.5 A, reducing heat generation and eliminating need for active cooling.	Use Scenario: Drive small brushed DC motors (<5 W) in portable medical devices or actuator subsystems. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or single-FET PWM control stage. Use Value: Fast switching (t_r = 16 ns, t_f = 9.4 ns) supports PWM frequencies >100 kHz, minimizing audible noise and torque ripple.
Relay Replacement Circuit	LED Current Regulator
Use Scenario: Solid-state replacement for electromechanical relays in building automation or PLC I/O modules. IC Role / Device Role / Timing Role: Power switch handling inductive coil energy with integrated avalanche capability. Use Value: Single-pulse E_AS = 150 mJ absorbs coil flyback energy without external TVS, simplifying BOM and layout.	Use Scenario: Constant-current dimming driver for indicator LEDs or status lighting in embedded panels. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 1.5 A. Use Value: Tight V_GS(th) range (2.0–4.0 V) enables precise analog current control using simple op-amp feedback.

Power Supply Load Switch

Low-Voltage DC Motor Driver

Use Scenario: Enable/disable 12–24 V rail to peripheral modules in industrial controllers or IoT gateways.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery with minimal quiescent current and fast response.

Use Value: R_DS(on) = 0.54 Ω limits voltage drop to <1 V at 1.5 A, reducing heat generation and eliminating need for active cooling.

Use Scenario: Drive small brushed DC motors (<5 W) in portable medical devices or actuator subsystems.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or single-FET PWM control stage.

Use Value: Fast switching (t_r = 16 ns, t_f = 9.4 ns) supports PWM frequencies >100 kHz, minimizing audible noise and torque ripple.

Relay Replacement Circuit

LED Current Regulator

Use Scenario: Solid-state replacement for electromechanical relays in building automation or PLC I/O modules.

IC Role / Device Role / Timing Role: Power switch handling inductive coil energy with integrated avalanche capability.

Use Value: Single-pulse E_AS = 150 mJ absorbs coil flyback energy without external TVS, simplifying BOM and layout.

Use Scenario: Constant-current dimming driver for indicator LEDs or status lighting in embedded panels.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 1.5 A.

Use Value: Tight V_GS(th) range (2.0–4.0 V) enables precise analog current control using simple op-amp feedback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFL110TRPBF-BE3	Same die, alternate manufacturing location; identical V_DS, R_DS(on), Q_g, and thermal specs	No functional difference; qualified for same use cases including PCB-mounted power switching	Select when supply chain diversification or dual-sourcing is required without design change
DMN2011UW-7	Lower V_DS (20 V), lower R_DS(on) (0.11 Ω), smaller SOT-523 package - not interchangeable due to voltage and thermal limits	Only suitable for ≤12 V systems; insufficient for 24 V or 48 V auxiliary rails where SIHFL110TR-GE3 operates	Consider only for space-constrained, low-voltage (<15 V) designs where 100 V rating is unnecessary

Compared with IRFL110TRPBF-BE3, SIHFL110TR-GE3 offers identical electrical and thermal performance with different traceability marking; compared with DMN2011UW-7, it provides higher voltage headroom and superior avalanche ruggedness but requires larger SOT-223 footprint and delivers higher conduction loss at low voltages.

Availability

SIHFL110TR-GE3 is available at Aetrix Electronics and suitable for power supply load switching, low-voltage DC motor control, relay replacement circuits, and LED current regulation requiring stable component supply and long-term industrial availability.

Supply support for SIHFL110TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and ruggedness.

The SIHFL110TR-GE3 belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for cost-effective, thermally efficient switching in space-constrained industrial and consumer power management applications.

FAQ

What is the maximum continuous drain current for SIHFL110TR-GE3 at 100 °C case temperature?

The SIHFL110TR-GE3 supports 0.96 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.025 W/°C and P_D = 3.1 W at 25 °C. This value is confirmed in the Absolute Maximum Ratings table and validated under PCB-mount conditions per note "e" in the datasheet.

Does SIHFL110TR-GE3 have avalanche capability, and how is it rated?

Yes, SIHFL110TR-GE3 is repetitively avalanche rated with E_AR = 0.31 mJ and I_AR = 1.5 A, and single-pulse rated for E_AS = 150 mJ. These values are measured under defined test conditions (L = 25 mH, R_g = 25 Ω, I_AS = 3.0 A) and documented in Figure 12 and the Absolute Maximum Ratings table.

What is the gate-source threshold voltage range for SIHFL110TR-GE3?

The gate-source threshold voltage V_GS(th) for SIHFL110TR-GE3 is specified as 2.0 V minimum to 4.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with 3.3 V and 5 V logic-level microcontrollers while maintaining noise immunity.

Can SIHFL110TR-GE3 be used in parallel configurations?

Yes, SIHFL110TR-GE3 is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient and matched threshold voltage distribution. The datasheet explicitly lists "Ease of paralleling" as a feature, and thermal symmetry in the SOT-223 package supports balanced current sharing.

Is SIHFL110TR-GE3 compliant with RoHS and halogen-free standards?

Yes, SIHFL110TR-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU requirements. The "-GE3" suffix denotes this compliance, and material categorization is defined in Vishay document #99912.

SIHFL110TR-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta), 3.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

SIHFL110TR-GE3 FAQ

1.How can I place an order for SIHFL110TR-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFL110TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFL110TR-GE3 reliable?

The price and inventory of SIHFL110TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFL110TR-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFL110TR-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFL110TR-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFL110TR-GE3?

SIHFL110TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFL110TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFL110TR-GE3?

For technical support, including SIHFL110TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFL110TR-GE3 requirements.

6.How does Aetrix verify that SIHFL110TR-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFL110TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFL110TR-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFL110TR-GE3?

All SIHFL110TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFL110TR-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFL110TR-GE3 part is unused and in its original packaging.

Return procedure for SIHFL110TR-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…