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Vishay Siliconix SIHFL210TR-GE3
- Part No.:
- SIHFL210TR-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
SIHFL210TR-GE3.pdf
- Description:
- MOSFET N-CHANNEL 200V
- Quantity:
- Payment:
- Shipping:
Inventory:348
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Product details
Overview
SIHFL210TR-GE3 from Vishay Siliconix is a 200 V, 0.96 A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 8.2 nC total gate charge, and repetitive avalanche rating. It serves as a low-power switching device in DC-DC converters, LED drivers, and load-switching circuits where surface-mount thermal performance and ruggedness are required.
For engineers reviewing the SIHFL210TR-GE3 datasheet, SIHFL210TR-GE3 pinout, SIHFL210TR-GE3 application, or SIHFL210TR-GE3 equivalent, key selection criteria include its 200 V drain-source breakdown voltage, 1.5 Ω on-resistance, 50 mJ single-pulse avalanche energy, SOT-223 thermal design (2.0 W PCB mount), and fast 8.2 ns turn-on delay with 17 ns rise time.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve stable threshold voltage (2.0–4.0 V) and low gate charge (Qg = 8.2 nC, Qgd = 4.5 nC) for efficient gate drive. Its dynamic dV/dt rating of 5.0 V/ns supports reliable operation in inductive switching environments.
The device integrates a robust body diode with 150–310 ns reverse recovery time and 0.60–1.4 μC Qrr, enabling unclamped inductive switching up to 0.96 A avalanche current and 50 mJ single-pulse energy-critical for flyback and relay-driving topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input voltages up to 160 V DC in off-line auxiliary supplies and industrial control rails |
| RDS(on) | 1.5 Ω @ VGS = 10 V - limits conduction loss to ≤0.87 W at 0.96 A continuous drain current |
| Qg | 8.2 nC - enables fast switching with low gate-drive power (e.g., <100 µW at 100 kHz with 10 V drive) |
| EAS | 50 mJ - allows safe operation during inductive turn-off transients without external snubbers |
| TJ Range | −55 °C to +150 °C - qualified for extended temperature operation in automotive cabin modules and industrial PLC I/O stages |
| RthJA (PCB) | 40 °C/W - delivers 2.0 W power dissipation on 1" FR-4 board, supporting compact SMT layout without heatsink |
Pinout & Package
SOT-223 package with exposed drain tab for thermal conduction; 3-pin configuration (G-D-S) with pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source. Mounting per JEDEC TO-261AA outline; soldering peak temperature 300 °C for 10 s.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Controls channel conduction; requires ≥2.0 V VGS(th) to turn on; low 1.8 nC Qgs enables simple microcontroller-level drive |
| Pin 2 (D) | Drain | Main high-voltage terminal; electrically connected to exposed copper tab for direct PCB heat sinking and low-inductance high-current path |
| Pin 3 (S) | Source | Reference node for gate drive and current return; internal source inductance LS = 6.0 nH affects diode recovery behavior |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports ≥104 cycles of 0.31 mJ repetitive avalanche energy without degradation-enables robust relay/coil driving |
| Dynamic dV/dt immunity | Rated 5.0 V/ns - prevents false turn-on during fast-rising bus transients in motor control H-bridge half-bridges |
| Surface-mount optimized | SOT-223 footprint allows automated placement and achieves >1.25 W dissipation on standard FR-4, eliminating through-hole assembly |
| Fast switching | 8.2 ns td(on), 17 ns tr, 14 ns td(off), 8.9 ns tf - reduces switching losses in 100–500 kHz DC-DC applications |
Applications
| LED Constant-Current Driver | Industrial Load Switch |
|---|---|
Use Scenario: Driving 12–24 V LED strings in signage and panel lighting with PWM dimming. IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; operates in linear or saturated switching mode. Use Value: 1.5 Ω RDS(on) minimizes dropout voltage and self-heating; 200 V rating accommodates 24 V supply with margin for surge events. | Use Scenario: Enabling/disabling 12–48 V solenoids, relays, or small motors in programmable logic controllers. IC Role / Device Role / Timing Role: High-voltage load switch with integrated body diode for inductive kickback clamping. Use Value: 50 mJ EAS and 0.96 A IAR eliminate need for external flyback diodes in most 24 V/0.5 A loads. |
| Offline Auxiliary Power Supply | Low-Power DC-DC Converter |
Use Scenario: Providing bias power from 100–277 V AC mains via flyback topology in smart meters and IoT gateways. IC Role / Device Role / Timing Role: Primary-side switch operating at ≤100 kHz with unclamped inductive turn-off. Use Value: Repetitive avalanche capability ensures reliability across line-voltage surges and startup transients without derating. | Use Scenario: Step-down conversion from 12 V or 24 V input to 3.3 V/5 V for microcontrollers and sensors. IC Role / Device Role / Timing Role: Synchronous or asynchronous high-side/low-side switch in buck regulator stage. Use Value: Low 8.2 nC Qg and fast 17 ns rise time reduce gate drive losses and improve light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFL210TRPbF | Same die, Pb-free but not halogen-free; identical RDS(on), Qg, and avalanche ratings | No functional difference; used where halogen-free compliance is not mandated | Select IRFL210TRPbF when RoHS-only (not REACH/halogen-free) compliance suffices |
| DMN2004LK-7 | 20 V VDS, 4.2 A ID, 0.045 Ω RDS(on); SOT-23 package, lower voltage/higher current | Not suitable for >30 V applications; intended for battery-powered logic-level loads | Choose DMN2004LK-7 only for low-voltage (<20 V), high-current digital switching-not as drop-in replacement |
Compared with IRFL210TRPbF, SIHFL210TR-GE3 adds halogen-free compliance while maintaining identical electrical performance; versus DMN2004LK-7, it trades higher voltage capability (200 V vs. 20 V) for lower current rating (0.96 A vs. 4.2 A), making it suitable for mains-referenced rather than battery-referenced designs.
Availability
SIHFL210TR-GE3 is available at Aetrix Electronics and suitable for industrial control systems, LED lighting drivers, and offline auxiliary power supplies requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SIHFL210TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.
The SIHFL210TR-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, surface-mount switching in space-constrained industrial and consumer power applications up to 200 V.
FAQ
What is the maximum continuous drain current for SIHFL210TR-GE3 at 100 °C case temperature?
The SIHFL210TR-GE3 supports 0.6 A continuous drain current at TC = 100 °C, derated from 0.96 A at 25 °C using a linear derating factor of 0.025 W/°C. This reflects thermal limitations of the SOT-223 package under sustained high-temperature operation, and must be verified against actual PCB layout and ambient conditions in the final design.
Does SIHFL210TR-GE3 have a specified body diode reverse recovery time?
Yes, the SIHFL210TR-GE3 body diode has a typical reverse recovery time (trr) of 150 ns and maximum of 310 ns at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating switching losses in synchronous rectification or freewheeling paths where the intrinsic diode conducts.
Is SIHFL210TR-GE3 suitable for avalanche energy handling in inductive load switching?
Yes, the SIHFL210TR-GE3 is explicitly repetitive avalanche rated with 0.31 mJ EAR and 50 mJ EAS (single-pulse). It is validated for unclamped inductive switching per Figure 12, supporting robust relay and solenoid driving without external protection components when operated within its 0.96 A IAR limit.
What is the gate-source threshold voltage range for SIHFL210TR-GE3?
The SIHFL210TR-GE3 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 µA and VDS = VGS. This ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while maintaining noise immunity in electrically noisy industrial environments.
How does the SOT-223 package of SIHFL210TR-GE3 improve thermal performance over standard SOT-23?
The SIHFL210TR-GE3 SOT-223 package features an enlarged copper drain tab that lowers thermal resistance to 40 °C/W (junction-to-ambient, PCB mount), enabling 2.0 W power dissipation-more than double typical SOT-23 capability. This allows higher current operation without heatsinks in space-limited industrial and lighting applications.
SIHFL210TR-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 960mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 580mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
SIHFL210TR-GE3 FAQ
1.How can I place an order for SIHFL210TR-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFL210TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFL210TR-GE3 reliable?
The price and inventory of SIHFL210TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFL210TR-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFL210TR-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFL210TR-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFL210TR-GE3?
SIHFL210TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFL210TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFL210TR-GE3?
For technical support, including SIHFL210TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFL210TR-GE3 requirements.
6.How does Aetrix verify that SIHFL210TR-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFL210TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFL210TR-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFL210TR-GE3?
All SIHFL210TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFL210TR-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFL210TR-GE3 part is unused and in its original packaging.
Return procedure for SIHFL210TR-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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