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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFPS40N50L-GE3

Name: SIHFPS40N50L-GE3
Brand: Vishay Siliconix
SKU: SIHFPS40N50L-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFPS40N50L-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: SIHFPS40N50L-GE3.pdf

Description:: POWER MOSFET SUPER-247, 100 M @

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Product details

Overview

SIHFPS40N50L-GE3 from Vishay Siliconix is a 500 V, 46 A N-channel Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.087 Ω @ V_GS = 10 V, Q_g = 380 nC, and enhanced dV/dt ruggedness of 34 V/ns - designed for high-efficiency zero-voltage switching (ZVS) topologies in telecom and server power supplies.

For engineers reviewing the SIHFPS40N50L-GE3 datasheet, SIHFPS40N50L-GE3 pinout, SIHFPS40N50L-GE3 application, or SIHFPS40N50L-GE3 equivalent, key selection criteria include avalanche energy rating (E_AS = 920 mJ), superfast body diode recovery (t_rr = 170–250 ns), gate threshold voltage (V_GS(th) = 3.0–5.0 V), thermal resistance (R_thJC = 0.23 °C/W), and lead-free/halogen-free compliance.

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for ZVS operation, with a superfast intrinsic body diode enabling elimination of external freewheeling diodes. Its elevated V_GS(th) (3.0–5.0 V) improves noise immunity in noisy high-power environments.

The MOSFET delivers high pulsed current capability (I_DM = 180 A) and robust unclamped inductive switching performance (E_AS = 920 mJ), supported by low R_thJC (0.23 °C/W) and high peak dV/dt tolerance (34 V/ns), making it suitable for hard-switched and resonant SMPS stages where reliability under transient stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus telecom/server PSUs without derating.
R_DS(on) @ 10 V	0.087 Ω max - enables <1.1 W conduction loss at 46 A, reducing heatsink requirements.
Q_g	380 nC - dictates gate driver strength needed; requires ≥2 A peak drive for <100 ns switching transitions.
E_AS	920 mJ - ensures single-pulse avalanche survivability during startup or fault conditions in offline converters.
t_rr	170–250 ns - fast body diode recovery minimizes switching losses and voltage overshoot in ZVS LLC phases.
R_thJC	0.23 °C/W - allows >500 W power dissipation with modest heatsinking (e.g., 1°C rise per 2.2 W).
dV/dt	34 V/ns - withstands rapid voltage transients in high-frequency resonant converters without false turn-on.

Pinout & Package

Package: Super-247 (TO-274AA), isolated drain tab, surface-mount compatible with high-current PCB layouts and mechanical clamping heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current power output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground referenced.
Gate	Control input	Low-impedance CMOS-compatible node; requires gate resistor (R_g ≈ 0.85 Ω typical) to control dv/dt and ringing.
Source	Power return / reference node	Common return path for load current and gate drive; layout must minimize inductance to prevent shoot-through.

Key Features

Feature	Design Value
Superfast body diode	Eliminates need for external anti-parallel diode in ZVS half/full-bridge converters, reducing BOM count and layout area.
Enhanced dV/dt ruggedness	34 V/ns rating prevents spurious turn-on during high-slew-rate switching events in resonant topologies.
Higher V_GS(th)	3.0–5.0 V threshold reduces susceptibility to EMI-induced false triggering in high-noise power systems.
Low gate charge	Q_g = 380 nC enables efficient high-frequency operation (>100 kHz) with moderate gate driver ICs (e.g., UCC27611).
Avalanche-rated	920 mJ single-pulse E_AS supports reliable operation during overcurrent or short-circuit events without external protection.

Applications

Telecom Rectifiers	Server PSU Primary Switch
Use Scenario: High-density 48 V output rectification in -48 V telecom systems using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 100–200 kHz with ZVS turn-on. Use Value: Superfast body diode enables self-commutated ZVS, reducing switching losses by >30% vs. standard MOSFETs and eliminating discrete Schottky diodes.	Use Scenario: Primary-side switching in 12 V/1000 W server power supplies with LLC resonant converter architecture. IC Role / Device Role / Timing Role: High-voltage bridge leg switch handling 400 V DC bus, requiring robust avalanche capability and low C_oss. Use Value: 920 mJ E_AS and 34 V/ns dV/dt rating ensure stable operation during resonant valley switching and line transients.
UPS Inverter Stage	Motor Drive Half-Bridge
Use Scenario: Bidirectional DC-AC inversion in online UPS systems with battery backup and grid synchronization. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter stage, subjected to repetitive unclamped inductive switching. Use Value: 54 mJ repetitive avalanche energy (E_AR) and 46 A I_AR rating support safe operation during motor regeneration and fault recovery.	Use Scenario: 400 V DC bus half-bridge driving industrial PMSM motors in servo drives with field-oriented control. IC Role / Device Role / Timing Role: Low-side switching element managing PWM commutation at up to 20 kHz with fast body diode freewheeling. Use Value: t_rr = 170–250 ns and Q_rr = 705–1060 nC minimize reverse recovery losses and EMI generation during high-dI/dt transitions.

Telecom Rectifiers

Server PSU Primary Switch

Use Scenario: High-density 48 V output rectification in -48 V telecom systems using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 100–200 kHz with ZVS turn-on.

Use Value: Superfast body diode enables self-commutated ZVS, reducing switching losses by >30% vs. standard MOSFETs and eliminating discrete Schottky diodes.

Use Scenario: Primary-side switching in 12 V/1000 W server power supplies with LLC resonant converter architecture.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch handling 400 V DC bus, requiring robust avalanche capability and low C_oss.

Use Value: 920 mJ E_AS and 34 V/ns dV/dt rating ensure stable operation during resonant valley switching and line transients.

UPS Inverter Stage

Motor Drive Half-Bridge

Use Scenario: Bidirectional DC-AC inversion in online UPS systems with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter stage, subjected to repetitive unclamped inductive switching.

Use Value: 54 mJ repetitive avalanche energy (E_AR) and 46 A I_AR rating support safe operation during motor regeneration and fault recovery.

Use Scenario: 400 V DC bus half-bridge driving industrial PMSM motors in servo drives with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching element managing PWM commutation at up to 20 kHz with fast body diode freewheeling.

Use Value: t_rr = 170–250 ns and Q_rr = 705–1060 nC minimize reverse recovery losses and EMI generation during high-dI/dt transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, R_DS(on) = 0.065 Ω, Q_g = 120 nC, TO-247 package - lower R_DS(on) but no specified E_AS rating.	Better conduction efficiency at <30 A; unsuitable for unclamped inductive loads without external snubbing.	Prefer when conduction loss dominates and avalanche stress is absent; verify layout compatibility with TO-247 footprint.
IXFH40N50P	500 V, R_DS(on) = 0.095 Ω, Q_g = 220 nC, TO-247 - lower gate charge but higher R_DS(on) and no published dV/dt rating.	Lower drive complexity but reduced ruggedness in ZVS edge-rate demanding designs.	Select when gate drive power budget is constrained and system dV/dt remains <25 V/ns; confirm thermal margin with R_thJC = 0.35 °C/W.

Compared with STW48N60M2 and IXFH40N50P, the SIHFPS40N50L-GE3 uniquely balances high avalanche energy (920 mJ), industry-leading dV/dt (34 V/ns), and ZVS-optimized body diode - making it the preferred choice for telecom/server SMPS where reliability under transient stress and resonant switching efficiency are jointly critical.

Availability

SIHFPS40N50L-GE3 is available at Aetrix Electronics and suitable for telecom rectifiers, server power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and lead-free/halogen-free compliance.

Supply support for SIHFPS40N50L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHFPS40N50L-GE3 belongs to Vishay's Super Junction Power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in ZVS-based telecom, server, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for SIHFPS40N50L-GE3 at 100 °C case temperature?

The SIHFPS40N50L-GE3 supports a continuous drain current of 29 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the Super-247 package and ensures junction temperature remains ≤150 °C under steady-state operation. Designers must verify heatsink performance to maintain this condition in real-world applications.

Does SIHFPS40N50L-GE3 have avalanche capability, and how is it rated?

Yes, the SIHFPS40N50L-GE3 is fully avalanche-rated: it guarantees 920 mJ single-pulse avalanche energy (E_AS) and 54 mJ repetitive avalanche energy (E_AR) at I_AR = 46 A. These values are validated per JEDEC JESD24-1 and enable reliable operation during unclamped inductive switching events common in SMPS startup and fault conditions.

What is the gate-source threshold voltage range for SIHFPS40N50L-GE3, and why does it matter?

The SIHFPS40N50L-GE3 has a V_GS(th) range of 3.0 V to 5.0 V at T_J = 25 °C. This elevated threshold improves noise immunity in high-power systems, reducing risk of false turn-on from gate noise or crosstalk - especially critical in densely packed telecom/server power modules where EMI margins are tight.

How does the body diode performance of SIHFPS40N50L-GE3 compare to standard MOSFETs?

The SIHFPS40N50L-GE3 features a superfast body diode with t_rr = 170–250 ns and Q_rr = 705–1060 nC, significantly faster than conventional high-voltage MOSFETs (typically >500 ns). This enables true ZVS operation without external diodes, reducing conduction losses and layout complexity in resonant converters.

Is SIHFPS40N50L-GE3 RoHS-compliant and halogen-free?

Yes, SIHFPS40N50L-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and Vishay's internal material compliance standards (documented in Vishay specification 99912). The "-GE3" suffix explicitly denotes this environmental compliance, verified through certified lab testing and material declarations.

SIHFPS40N50L-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 380 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 8110 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 540W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHFPS40N50L-GE3 FAQ

1.How can I place an order for SIHFPS40N50L-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFPS40N50L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFPS40N50L-GE3 reliable?

The price and inventory of SIHFPS40N50L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFPS40N50L-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFPS40N50L-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFPS40N50L-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFPS40N50L-GE3?

SIHFPS40N50L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFPS40N50L-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFPS40N50L-GE3?

For technical support, including SIHFPS40N50L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFPS40N50L-GE3 requirements.

6.How does Aetrix verify that SIHFPS40N50L-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFPS40N50L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFPS40N50L-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFPS40N50L-GE3?

All SIHFPS40N50L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFPS40N50L-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFPS40N50L-GE3 part is unused and in its original packaging.

Return procedure for SIHFPS40N50L-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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