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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR024-GE3

Name: SIHFR024-GE3
Brand: Vishay Siliconix
SKU: SIHFR024-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR024-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR024-GE3.pdf

Description:: MOSFET N-CHANNEL 60V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFR024-GE3 from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy-designed for DC-DC converters, motor control, and load switching where fast switching and ruggedness are critical.

For engineers reviewing the SIHFR024-GE3 datasheet, SIHFR024-GE3 pinout, SIHFR024-GE3 application, or SIHFR024-GE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and PCB-mount power dissipation limits to support layout validation and reliability analysis.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon process and packaging to achieve low conduction loss while maintaining high dV/dt immunity (5.5 V/ns) and robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V logic-level drivers.

The device integrates a fast-recovery body diode (t_rr = 88–180 ns, Q_rr = 0.29–0.64 μC) and exhibits linear SOA up to 100 μs pulse width, supporting hard-switched topologies without external snubbers in moderate-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24 V/48 V bus systems with margin against transients
R_DS(on)	0.10 Ω @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 14 A continuous drain current
Q_g	25 nC - Determines gate drive power requirement and switching speed in PWM circuits
E_AS	91 mJ - Supports reliable operation under unclamped inductive turn-off stress without external clamping
t_rr	88–180 ns - Limits reverse recovery losses and EMI generation during synchronous rectification
P_D (T_C = 25 °C)	42 W - Requires heatsink or copper pour for sustained >10 A operation at ambient temperature
R_thJC	3.0 °C/W - Enables direct thermal path from die to heatsink via exposed drain pad in DPAK

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; surface-mount compatible with vapor phase, infrared, or wave soldering per JEDEC standards.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; 5.8 nC gate-source charge defines Miller plateau duration
D (Drain)	High-side power output	Exposed metal pad on underside-must be connected to system ground plane or heatsink for thermal management and low-inductance return path
S (Source)	Reference node / return path	Provides low-impedance source connection; internal 7.5 nH source inductance affects switching waveform ringing

Key Features

Feature	Design Value
Dynamic dV/dt rating	5.5 V/ns - Prevents false turn-on during high-speed switching in noisy environments
Fast switching performance	td(on) = 13 ns, tr = 58 ns - Reduces transition losses in 100–500 kHz SMPS designs
Easy paralleling capability	Positive R_DS(on) temperature coefficient - Ensures current sharing stability across multiple devices
Ruggedized construction	91 mJ E_AS, 56 A pulsed drain current - Withstands repetitive inductive load transients without degradation
Low gate drive demand	V_GS(th) = 2.0–4.0 V - Compatible with microcontroller GPIO or dedicated gate drivers without level-shifting

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive. Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; fast t_rr reduces shoot-through risk during dead-time transitions.	Use Scenario: H-bridge driver for 24 V, 10 A brushed motors in automated gate controllers. IC Role / Device Role / Timing Role: High-side and low-side switching element with bidirectional current handling via integrated body diode. Use Value: 91 mJ E_AS withstands back-EMF spikes during abrupt motor stop; 56 A I_DM supports stall-current surges.
LED Constant-Current Driver	Hot-Swap Controller
Use Scenario: Dimmable 48 V LED string driver with PWM-based current regulation. IC Role / Device Role / Timing Role: Series pass switch modulated at 1–5 kHz to control average LED current. Use Value: Low Q_g (25 nC) enables efficient gate driving at low duty cycles; 60 V V_DS accommodates 48 V bus + 20 % transient margin.	Use Scenario: Inrush current limiter for 24 V backplane insertion in telecom shelf systems. IC Role / Device Role / Timing Role: Linear-mode active current-limiting element during hot-plug event. Use Value: 3.0 °C/W R_thJC allows short-duration linear operation with controlled junction temperature rise; 14 A I_D sustains steady-state load current.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive.

Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; fast t_rr reduces shoot-through risk during dead-time transitions.

Use Scenario: H-bridge driver for 24 V, 10 A brushed motors in automated gate controllers.

IC Role / Device Role / Timing Role: High-side and low-side switching element with bidirectional current handling via integrated body diode.

Use Value: 91 mJ E_AS withstands back-EMF spikes during abrupt motor stop; 56 A I_DM supports stall-current surges.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: Dimmable 48 V LED string driver with PWM-based current regulation.

IC Role / Device Role / Timing Role: Series pass switch modulated at 1–5 kHz to control average LED current.

Use Value: Low Q_g (25 nC) enables efficient gate driving at low duty cycles; 60 V V_DS accommodates 48 V bus + 20 % transient margin.

Use Scenario: Inrush current limiter for 24 V backplane insertion in telecom shelf systems.

IC Role / Device Role / Timing Role: Linear-mode active current-limiting element during hot-plug event.

Use Value: 3.0 °C/W R_thJC allows short-duration linear operation with controlled junction temperature rise; 14 A I_D sustains steady-state load current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR024TRPbF-BE3	Same silicon die, alternate manufacturing location; identical R_DS(on), Q_g, and E_AS; "-BE3" suffix denotes different fab site	No functional difference; qualified for same automotive and industrial temperature ranges (−55 to +150 °C)	Select when supply chain diversification or dual-sourcing is required without design change
STP60NF06L	60 V, 60 A, 0.016 Ω R_DS(on), TO-220 package; higher current rating but larger footprint and no exposed drain pad	Requires PCB redesign for through-hole mounting and additional heatsinking; not drop-in for DPAK layouts	Choose only if higher current capacity and lower R_DS(on) justify mechanical redesign and thermal revalidation

Compared with IRFR024TRPbF-BE3, SIHFR024-GE3 offers identical electrical performance with lead-free/halogen-free compliance confirmed by Vishay's material categorization; versus STP60NF06L, SIHFR024-GE3 provides superior thermal interface via DPAK's exposed drain but trades off peak current capability for compact surface-mount integration.

Availability

SIHFR024-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, LED drivers, and hot-swap protection requiring stable component supply, RoHS-compliant packaging, and proven ruggedness in industrial environments.

Supply support for SIHFR024-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and application-specific optimization.

The SIHFR024-GE3 belongs to Vishay's TrenchFET® Gen III family-engineered for high-efficiency, high-ruggedness switching in space-constrained industrial and automotive power systems where thermal performance and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for SIHFR024-GE3 at 100 °C case temperature?

The SIHFR024-GE3 supports 9.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure adequate copper area or heatsinking to maintain case temperature below 100 °C under full load. The SIHFR024-GE3 data sheet confirms this value with linear derating factor of 0.33 W/°C above 25 °C.

Does SIHFR024-GE3 have a built-in body diode, and what are its key recovery parameters?

Yes, SIHFR024-GE3 integrates a monolithic body diode with typical reverse recovery time (t_rr) of 88 ns and maximum of 180 ns at T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/μs. Its reverse recovery charge (Q_rr) ranges from 0.29 to 0.64 μC. These values are measured per the test conditions in the datasheet and directly impact efficiency and EMI in synchronous rectifier or freewheeling applications using the SIHFR024-GE3.

What is the gate-source threshold voltage range for SIHFR024-GE3, and how does it affect drive requirements?

The SIHFR024-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures full enhancement with standard 5 V or 10 V logic-level gate drivers without requiring specialized level shifters. Because the SIHFR024-GE3 operates reliably across this range, designers can use microcontroller GPIOs directly-provided gate drive strength meets the 25 nC total gate charge requirement.

Can SIHFR024-GE3 be used in linear mode for hot-swap or inrush limiting applications?

Yes, SIHFR024-GE3 is rated for linear-mode operation with a maximum power dissipation of 42 W at T_C = 25 °C and junction-to-case thermal resistance of 3.0 °C/W. Its Safe Operating Area (SOA) curve (Fig. 7) confirms capability for short-duration linear use-e.g., hot-swap current limiting-with appropriate gate bias control and thermal monitoring. The SIHFR024-GE3 datasheet explicitly validates this usage in unclamped inductive and linear regions.

What is the meaning of the "-GE3" suffix in SIHFR024-GE3?

The "-GE3" suffix in SIHFR024-GE3 indicates lead (Pb)-free and halogen-free compliance per Vishay's material categorization standard (document #99912), with "E3" denoting a specific environmental compliance grade. It does not indicate a functional variant-the SIHFR024-GE3 shares identical electrical specifications, package dimensions, and thermal performance with non-GE3 variants like IRFR024TRPbF-BE3. All SIHFR024-GE3 units meet RoHS Directive 2011/65/EU and JEDEC JS-001 ESD standards.

SIHFR024-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR024-GE3 FAQ

1.How can I place an order for SIHFR024-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR024-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR024-GE3 reliable?

The price and inventory of SIHFR024-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR024-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR024-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR024-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR024-GE3?

SIHFR024-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR024-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR024-GE3?

For technical support, including SIHFR024-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR024-GE3 requirements.

6.How does Aetrix verify that SIHFR024-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR024-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR024-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR024-GE3?

All SIHFR024-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR024-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR024-GE3 part is unused and in its original packaging.

Return procedure for SIHFR024-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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