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Vishay Siliconix SIHFR430ATR-GE3
- Part No.:
- SIHFR430ATR-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR430ATR-GE3.pdf
- Description:
- MOSFET N-CH 500V 5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,739
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Product details
Overview
SIHFR430ATR-GE3 from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring RDS(on) = 1.7 Ω at VGS = 10 V, Qg = 24 nC, and 130 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.
For engineers reviewing the SIHFR430ATR-GE3 datasheet, SIHFR430ATR-GE3 pinout, SIHFR430ATR-GE3 application, or SIHFR430ATR-GE3 equivalent, key selection criteria include its 500 V VDS, 1.7 Ω on-resistance at 10 V gate drive, 24 nC total gate charge, body diode recovery time of 410–620 ns, and DPAK thermal performance with RthJC = 1.1 °C/W.
Technical Context
This MOSFET employs planar vertical DMOS technology optimized for high-voltage unclamped inductive switching. Its gate structure delivers low Qg/Qgd ratio (24 nC / 13 nC), supporting fast, dV/dt-rugged turn-off in hard-switched topologies.
It integrates a robust intrinsic body diode rated for 5.0 A continuous source current and 20 A pulsed operation, with characterized reverse recovery (Qrr = 1.4–2.1 μC, trr = 410–620 ns), enabling reliable operation in flyback and forward converter freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25 % margin for surge and ringing |
| RDS(on) | 1.7 Ω @ VGS = 10 V - determines conduction loss in 5 A continuous switch-node applications |
| Qg | 24 nC - defines gate driver current requirement for 100 ns switching transitions |
| EAS | 130 mJ - enables safe operation under unclamped inductive load conditions up to 5 A |
| trr | 410–620 ns - sets minimum dead-time in synchronous rectification to avoid shoot-through |
| RthJC | 1.1 °C/W - allows 110 W dissipation with ≤121 °C junction rise above 25 °C case temperature |
| ID (TC = 100 °C) | 3.2 A - defines maximum continuous current under heatsink-limited thermal conditions |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), compliant with JEDEC MO-238.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; 6.5 nC Qgs enables simple gate resistor sizing |
| D (Drain) | High-side power output | Connected to exposed copper pad - primary thermal path and high-voltage node |
| S (Source) | Reference and return path | Common node for gate drive reference and current sensing; ties to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 24 nC / 13 nC - reduces Miller-induced turn-off delay and improves EMI control |
| Characterized Coss eff. | 51 pF - enables accurate snubber design and soft-switching analysis |
| Avalanche-rated | 130 mJ single-pulse - eliminates need for external clamping in cost-sensitive flyback designs |
| Body diode dV/dt ruggedness | 3.0 V/ns - prevents spurious turn-on during high-slew-rate commutation |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material category "Green" |
Applications
| Switch Mode Power Supply (SMPS) | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Primary-side switching transistor in 50–200 W offline flyback converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 500 V rating accommodates 375 V DC link with safety margin; 1.7 Ω RDS(on) limits conduction loss to <1.5 W at 5 A. | Use Scenario: DC-AC inverter stage switching element in line-interactive UPS systems. IC Role / Device Role / Timing Role: Half-bridge leg switch handling bidirectional power flow during battery backup mode. Use Value: 130 mJ EAS withstands inductive kickback during grid-fail transitions without external protection. |
| High-Speed Power Switching | Industrial Motor Drive Front-End |
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Fast-turning isolated load switch controlled by microcontroller GPIO. Use Value: 24 nC Qg enables full turn-on in <200 ns with 100 Ω gate resistor, supporting 10 kHz+ switching. | Use Scenario: Brake chopper switch in 24–48 V DC bus motor drives. IC Role / Device Role / Timing Role: Energy-dump switch clamping regenerated bus voltage during deceleration. Use Value: 5.0 A continuous ID and 3.2 A @ 100 °C support sustained braking loads; body diode handles reverse recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR430ATR-GE3 | Same die, identical specs, legacy Infineon branding; Pb-free DPAK variant | No functional difference; qualified for same SMPS/UPS use cases | Drop-in substitute with identical footprint and thermal profile |
| STP5NK50ZFP | Zener-protected superjunction MOSFET; 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 22 nC | Better conduction efficiency but lower avalanche rating (EAS = 75 mJ) | Preferred where lower RDS(on) dominates over avalanche robustness |
Compared with IRFR430ATR-GE3, SIHFR430ATR-GE3 offers identical electrical and mechanical specifications under Vishay's manufacturing control; versus STP5NK50ZFP, it trades 0.3 Ω higher on-resistance for +73 % avalanche energy margin - critical in unclamped inductive loads.
Availability
SIHFR430ATR-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and industrial motor drive front-end circuits requiring stable component supply and long-term production continuity.
Supply support for SIHFR430ATR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.
The SIHFR430A family belongs to Vishay's high-voltage planar MOSFET product line, engineered for robustness in offline AC-DC conversion, UPS, and industrial switching where avalanche capability and dV/dt immunity are mandatory.
FAQ
What is the maximum continuous drain current for SIHFR430ATR-GE3 at 100 °C case temperature?
The SIHFR430ATR-GE3 supports 3.2 A continuous drain current when the case temperature is maintained at 100 °C, per its linear derating curve and absolute maximum ratings table. This value reflects thermal limitation rather than silicon capability - at 25 °C case, it sustains 5.0 A continuously. Designers must verify heatsinking to ensure TC ≤ 100 °C under full load to maintain this current rating. The SIHFR430ATR-GE3 datasheet specifies RthJC = 1.1 °C/W, enabling precise junction temperature estimation.
Does SIHFR430ATR-GE3 have avalanche capability, and how is it specified?
Yes, the SIHFR430ATR-GE3 is fully rated for repetitive and single-pulse avalanche operation. It guarantees 130 mJ single-pulse avalanche energy (EAS) under standardized test conditions (L = 11 mH, IAS = 5.0 A, TJ initial = 25 °C), and 11 mJ repetitive avalanche energy (EAR). These values are measured and characterized - not calculated - and appear in the Absolute Maximum Ratings table of the official Vishay datasheet S21-0373-Rev. E. The SIHFR430ATR-GE3 uses ruggedized gate oxide and optimized cell layout to ensure consistent avalanche performance across production lots.
What is the gate threshold voltage range for SIHFR430ATR-GE3, and how does it affect drive requirements?
The SIHFR430ATR-GE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.5 V at TJ = 25 °C and ID = 250 μA. This means reliable turn-on begins near 2.0 V, but full enhancement (RDS(on) = 1.7 Ω) requires VGS ≥ 10 V. The wide VGS(th) distribution necessitates gate drive designs that ensure minimum 10 V swing - especially at elevated temperatures, where VGS(th) decreases. The SIHFR430ATR-GE3 is not a logic-level MOSFET; it requires a dedicated 10–15 V gate driver, not direct 3.3 V or 5 V MCU output.
How does the body diode performance of SIHFR430ATR-GE3 compare to standard rectifiers in flyback applications?
The SIHFR430ATR-GE3 body diode exhibits trr = 410–620 ns and Qrr = 1.4–2.1 μC at TJ = 25 °C, with VSD = 1.5 V at IS = 5.0 A. While slower and higher-loss than dedicated ultrafast or SiC Schottky diodes, its parameters are fully characterized and stable across temperature - enabling predictable snubber design and reduced EMI in self-driven synchronous flyback configurations. Unlike discrete diodes, the SIHFR430ATR-GE3 body diode shares thermal mass with the MOSFET die, simplifying thermal design. Its dV/dt immunity (3.0 V/ns) also prevents false triggering during high-slew events.
Is SIHFR430ATR-GE3 compatible with standard DPAK (TO-252) footprint and reflow profiles?
Yes, the SIHFR430ATR-GE3 uses the industry-standard TO-252AA (DPAK) package per JEDEC MO-238, with mechanical dimensions matching Vishay's documented outline (Document 71197). Its recommended soldering peak temperature is 300 °C for 10 seconds, fully compatible with lead-free reflow profiles (IPC-J-STD-020). The exposed drain pad requires appropriate thermal pad design - Application Note 826 specifies minimum copper area (10.668 mm × 5.690 mm) and thermal vias for optimal RthJA. No special stencil or placement adjustments are needed beyond standard DPAK handling; the SIHFR430ATR-GE3 is mechanically and thermally interoperable with all TO-252 footprints.
SIHFR430ATR-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.7Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR430ATR-GE3 FAQ
1.How can I place an order for SIHFR430ATR-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR430ATR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR430ATR-GE3 reliable?
The price and inventory of SIHFR430ATR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR430ATR-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR430ATR-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR430ATR-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR430ATR-GE3?
SIHFR430ATR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR430ATR-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR430ATR-GE3?
For technical support, including SIHFR430ATR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR430ATR-GE3 requirements.
6.How does Aetrix verify that SIHFR430ATR-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR430ATR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR430ATR-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR430ATR-GE3?
All SIHFR430ATR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR430ATR-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR430ATR-GE3 part is unused and in its original packaging.
Return procedure for SIHFR430ATR-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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