Vishay Siliconix SIHFS11N50A-GE3

Overview

SIHFS11N50A-GE3 from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in D2PAK (TO-263) package, with R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and rated for repetitive avalanche energy of 17 mJ - designed for high-voltage switching in SMPS half-bridge and PFC boost stages.

For engineers reviewing the SIHFS11N50A-GE3 datasheet, SIHFS11N50A-GE3 pinout, SIHFS11N50A-GE3 application, or SIHFS11N50A-GE3 equivalent, key selection criteria include its 500 V V_DS, low gate charge enabling simple gate drive, robust dV/dt ruggedness (6.9 V/ns), and fully characterized C_oss and body diode recovery (t_rr = 510–770 ns).

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its gate structure delivers low Q_g/Q_gd ratio (52 nC / 18 nC) and controlled dV/dt immunity, while the integral body diode supports synchronous rectification and unclamped inductive switching with validated E_AS = 275 mJ.

The thermal design leverages a low R_thJC of 0.75 °C/W and a copper-exposed drain pad in D2PAK for efficient heat transfer to heatsinks. Dynamic parameters - including C_iss = 1423 pF, C_oss(eff) = 97 pF, and t_d(on)/t_f = 14 ns/28 ns - are fully characterized across temperature and operating conditions per Vishay S13-1927-Rev. E.

Key Specifications

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on underside for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard (Document 73397). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP12NK50ZFP and IXFH12N50P, the SIHFS11N50A-GE3 offers balanced trade-offs: verified 275 mJ single-pulse avalanche, industry-standard D2PAK thermal performance, and fully characterized dynamic parameters - making it a robust choice for industrial SMPS and UPS where reliability under transient stress is critical.

Availability

SIHFS11N50A-GE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHFS11N50A-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-voltage, and thermally optimized devices.

The SIHFS11N50A-GE3 belongs to Vishay's high-voltage power MOSFET product line, engineered for efficiency-critical 400–500 V DC bus applications in enterprise power, industrial automation, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHFS11N50A-GE3 at 100 °C case temperature?

The SIHFS11N50A-GE3 has a continuous drain current rating of 7.0 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its 0.75 °C/W R_thJC constraint. At T_C = 25 °C, the rating is 11 A. Designers must verify heatsink sizing using actual ambient and airflow conditions to maintain T_C ≤ 100 °C for sustained 7 A loads.

Does SIHFS11N50A-GE3 support logic-level gate drive?

No, SIHFS11N50A-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and it is characterized for full enhancement at V_GS = 10 V - requiring a dedicated 10 V gate driver. It does not guarantee reliable turn-on at 3.3 V or 5 V logic levels. For logic-level alternatives, consider Vishay's SiHF3202 or similar 5 V-rated parts, but note that those lack the 500 V rating of SIHFS11N50A-GE3.

What is the significance of the "-GE3" suffix in SIHFS11N50A-GE3?

"-GE3" denotes a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2015/863 and Vishay's material categorization standard (Doc. 99912). It confirms the device uses matte tin-plated leads, green molding compound, and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The GE3 variant replaces legacy Pb-bearing versions like IRFS11N50APbF and is qualified for reflow soldering up to 260 °C peak temperature.

How is the effective output capacitance (Coss eff.) of SIHFS11N50A-GE3 defined and why does it matter?

Coss eff. = 97 pF for SIHFS11N50A-GE3 is a fixed capacitance value calibrated to replicate the actual time required to charge C_oss as V_DS rises from 0 % to 80 % of 400 V - unlike typical C_oss measured at fixed bias. This parameter directly impacts zero-voltage switching (ZVS) design, snubber sizing, and turn-off energy loss (E_off ∝ Coss eff. × V_DS²). It is more accurate than static C_oss (208 pF at V_DS = 25 V) for high-voltage switching analysis.

Can SIHFS11N50A-GE3 be used in synchronous rectification configurations?

SIHFS11N50A-GE3 is not recommended for synchronous rectification due to its relatively high body diode forward voltage (V_SD = 1.5 V at 11 A) and slow reverse recovery (t_rr = 510–770 ns). These characteristics increase conduction and recovery losses compared to purpose-built SR MOSFETs with low V_SD (<0.8 V) and ultrafast t_rr (<100 ns). For secondary-side synchronous rectification, use dedicated SR controllers paired with low-V_th, low-Q_rr MOSFETs instead of SIHFS11N50A-GE3.