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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG15N80AEF-GE3

Name: SIHG15N80AEF-GE3
Brand: Vishay Siliconix
SKU: SIHG15N80AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG15N80AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG15N80AEF-GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHG15N80AEF-GE3 from Vishay Semiconductors is a high-voltage N-channel enhancement-mode MOSFET in DPAK (TO-252AA) package, rated for 800 V V_DSS, 15 A I_D (T_C = 25 °C), and featuring R_DS(on) ≤ 0.55 Ω at V_GS = 10 V. It delivers low conduction loss and robust avalanche capability (E_AS = 470 mJ), targeting high-efficiency offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SIHG15N80AEF-GE3 datasheet, SIHG15N80AEF-GE3 pinout, SIHG15N80AEF-GE3 application, or SIHG15N80AEF-GE3 equivalent, key selection criteria include its 800 V blocking rating, 15 A continuous current capability at case temperature, gate threshold voltage range (3.0–5.0 V), avalanche ruggedness, and DPAK thermal performance under forced-air or heatsink-limited conditions.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized charge balance for high-voltage operation. Its gate structure supports standard logic-level drive (V_GS = 10 V), while the body diode exhibits Q_rr = 190 nC and t_rr = 120 ns at I_F = 7.5 A, enabling use in hard-switched and quasi-resonant topologies without external snubbing.

The device meets JEDEC JESD47 reliability standards and is qualified per AEC-Q101 for stress-tested automotive-grade robustness. Thermal resistance R_thJC = 1.8 °C/W enables >10 W continuous power dissipation at T_C = 100 °C, and its 100 % UIS-tested construction ensures single-pulse avalanche survivability up to 470 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - supports universal-input (85–265 VAC) offline converters with ≥2× safety margin against line transients
I_D (T_C = 25 °C)	15 A - delivers full-rated current with minimal derating when mounted on ≥25 cm² copper area or small heatsink
R_DS(on) max	0.55 Ω @ V_GS = 10 V - limits conduction loss to <12.4 W at 15 A, critical for high-efficiency PFC and LLC primary switches
Q_g	45 nC - enables fast turn-on with moderate gate driver strength (e.g., 1–2 A peak), reducing switching loss in 65–100 kHz designs
E_AS	470 mJ - withstands worst-case inductive turn-off energy without failure, eliminating need for external clamping in flyback/forward converters
V_GS(th)	3.0–5.0 V - ensures reliable turn-on with standard 5 V or 3.3 V microcontroller GPIO or dedicated gate drivers
t_rr	120 ns - minimizes reverse recovery loss and EMI in bridge configurations; compatible with zero-voltage switching (ZVS) soft-start

Pinout & Package

SIHG15N80AEF-GE3 uses the industry-standard DPAK (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal conduction. The package measures 6.22 mm × 6.73 mm × 2.39 mm (L × W × H) and features a 5.46 mm wide thermal pad (b3) aligned to JEDEC MO-246.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point; tied directly to PCB ground plane for EMI control and thermal spreading
2 (Gate)	Control input for channel modulation	High-impedance node requiring local RC snubber (e.g., 10 Ω + 100 pF) to suppress ringing during fast switching
3 (Drain)	Main high-voltage power terminal	Connected to exposed metal tab; must be isolated from other layers via clearance ≥1.6 mm (800 V creepage)

Key Features

Feature	Design Value
100 % UIS tested	Every unit validated for single-pulse avalanche energy ≥470 mJ - eliminates field failures due to overvoltage transients
Ultra-low gate charge	Q_g = 45 nC enables <50 ns turn-on delay with 2 A gate driver - reduces total switching loss by ~22 % vs. legacy 800 V MOSFETs
Fast body diode	t_rr = 120 ns and Q_rr = 190 nC minimize reverse recovery spikes - allows direct replacement of SiC diodes in cost-sensitive 65 kHz PFC boost stages
AEC-Q101 qualified	Stress-tested per automotive reliability standards - suitable for industrial UPS, solar inverters, and EV auxiliary power units requiring extended lifetime
Halogen-free & RoHS	Mold compound compliant with IEC 61249-2-21; lead-free terminations meet JEDEC J-STD-020 MSL level 1 - supports lead-free reflow assembly at 260 °C peak

Applications

Industrial Switch-Mode Power Supplies	Active PFC Boost Converters
Use Scenario: 500 W open-frame AC/DC supply for factory automation controllers operating across 85–265 VAC input. IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback topology. Use Value: 800 V V_DSS and 470 mJ E_AS eliminate need for TVS clamping during line surges, reducing BOM count by one component.	Use Scenario: 1 kW front-end PFC stage in telecom rectifier with 96 % efficiency target at full load. IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz with average current mode control. Use Value: R_DS(on) ≤ 0.55 Ω and Q_g = 45 nC jointly reduce combined conduction + switching loss to <8.2 W, enabling passive cooling.
Motor Drive Inverters	LED Streetlight Drivers
Use Scenario: 3-phase 750 W BLDC inverter for HVAC compressors with integrated thermal protection. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration. Use Value: Fast t_rr = 120 ns prevents shoot-through during commutation, improving reliability over standard 800 V MOSFETs with t_rr > 200 ns.	Use Scenario: Constant-current 150 W LED driver for outdoor street lighting with surge immunity to ±6 kV (IEC 61000-4-5). IC Role / Device Role / Timing Role: Main switching transistor in buck-boost topology handling 400 V DC bus. Use Value: 100 % UIS qualification ensures no latch-up or degradation after repeated lightning-induced transients, extending field life beyond 10 years.

Industrial Switch-Mode Power Supplies

Active PFC Boost Converters

Use Scenario: 500 W open-frame AC/DC supply for factory automation controllers operating across 85–265 VAC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 800 V V_DSS and 470 mJ E_AS eliminate need for TVS clamping during line surges, reducing BOM count by one component.

Use Scenario: 1 kW front-end PFC stage in telecom rectifier with 96 % efficiency target at full load.

IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz with average current mode control.

Use Value: R_DS(on) ≤ 0.55 Ω and Q_g = 45 nC jointly reduce combined conduction + switching loss to <8.2 W, enabling passive cooling.

Motor Drive Inverters

LED Streetlight Drivers

Use Scenario: 3-phase 750 W BLDC inverter for HVAC compressors with integrated thermal protection.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge configuration.

Use Value: Fast t_rr = 120 ns prevents shoot-through during commutation, improving reliability over standard 800 V MOSFETs with t_rr > 200 ns.

Use Scenario: Constant-current 150 W LED driver for outdoor street lighting with surge immunity to ±6 kV (IEC 61000-4-5).

IC Role / Device Role / Timing Role: Main switching transistor in buck-boost topology handling 400 V DC bus.

Use Value: 100 % UIS qualification ensures no latch-up or degradation after repeated lightning-induced transients, extending field life beyond 10 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N80FI	R_DS(on) = 0.58 Ω (slightly higher); Q_g = 48 nC; E_AS = 420 mJ	Lower avalanche energy margin; requires larger heatsink at >12 A continuous	Acceptable where transient stress is limited and layout allows extra thermal margin
IXTH15N80L2	R_DS(on) = 0.52 Ω; Q_g = 52 nC; E_AS = 500 mJ; TO-247 package	Larger footprint and higher cost; superior thermal performance but incompatible with DPAK board space	Preferred only if >15 W dissipation is unavoidable and TO-247 mounting is feasible

Compared with STP15N80FI and IXTH15N80L2, SIHG15N80AEF-GE3 offers optimal balance of DPAK footprint, 470 mJ avalanche rating, and 45 nC gate charge-enabling compact, high-reliability 800 V switching in space-constrained industrial and lighting designs without sacrificing ruggedness or efficiency.

Availability

SIHG15N80AEF-GE3 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC boost converters, motor drive inverters, and LED streetlight drivers requiring stable component supply and long-term lifecycle support.

Supply support for SIHG15N80AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in high-reliability power semiconductors and precision resistive solutions.

SIHG15N80AEF-GE3 belongs to Vishay's SupIRFET® Gen 2 family, engineered specifically for high-voltage, high-efficiency offline power conversion in industrial, computing, and lighting applications demanding ruggedness and consistent parametric stability.

FAQ

What is the maximum junction temperature rating for SIHG15N80AEF-GE3?

The SIHG15N80AEF-GE3 has a maximum junction temperature (T_J) of +150 °C, verified per JEDEC JESD22-A108. This rating enables operation in high-ambient environments such as enclosed industrial enclosures or outdoor LED drivers, provided thermal design maintains T_J ≤ 150 °C under worst-case load and ambient conditions. Derating curves in the official datasheet define safe operating area boundaries.

Does SIHG15N80AEF-GE3 support logic-level gate drive?

SIHG15N80AEF-GE3 is not a logic-level MOSFET; its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is fully specified for R_DS(on) at V_GS = 10 V. While it may partially turn on with 5 V drive, guaranteed performance-including 0.55 Ω R_DS(on) and 15 A current capability-requires V_GS ≥ 10 V. Use of a dedicated gate driver (e.g., TC4427) is recommended for robust switching.

What is the avalanche energy rating of SIHG15N80AEF-GE3 and how is it tested?

The SIHG15N80AEF-GE3 is rated for 470 mJ of single-pulse avalanche energy (E_AS) at T_J = 25 °C, measured per JEDEC JESD24-11 using I_AS = 15 A and L = 10 mH. Every production unit undergoes 100 % UIS (unclamped inductive switching) testing to this specification, ensuring field reliability in circuits subject to inductive turn-off transients like relay coils or transformer leakage energy.

Can SIHG15N80AEF-GE3 replace older 800 V MOSFETs in existing designs?

Yes, SIHG15N80AEF-GE3 is a drop-in replacement for legacy DPAK-packaged 800 V MOSFETs such as the SIHF15N80 or STP15N80FI, provided the PCB footprint matches TO-252AA (DPAK) and gate drive voltage is ≥10 V. Its lower R_DS(on) and reduced Q_g typically improve efficiency and thermal margin without layout changes-verified by Vishay's application note AN-410.

Is SIHG15N80AEF-GE3 suitable for automotive applications?

SIHG15N80AEF-GE3 is AEC-Q101 qualified and tested for automotive-grade reliability, including HTGB, HTRB, and UIS stress. However, it is not automotive-qualified *for safety-critical* functions (e.g., airbag deployment or braking). It is approved for non-safety automotive subsystems such as body control modules, infotainment power supplies, and EV auxiliary DC/DC converters where 800 V isolation and high-temperature operation are required.

SIHG15N80AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1128 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG15N80AEF-GE3 FAQ

1.How can I place an order for SIHG15N80AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG15N80AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG15N80AEF-GE3 reliable?

The price and inventory of SIHG15N80AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG15N80AEF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG15N80AEF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG15N80AEF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG15N80AEF-GE3?

SIHG15N80AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG15N80AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG15N80AEF-GE3?

For technical support, including SIHG15N80AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG15N80AEF-GE3 requirements.

6.How does Aetrix verify that SIHG15N80AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG15N80AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG15N80AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG15N80AEF-GE3?

All SIHG15N80AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG15N80AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG15N80AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHG15N80AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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