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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG17N80AE-GE3

Name: SIHG17N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHG17N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG17N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG17N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 15A TO247AC

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Product details

Overview

SIHG17N80AE-GE3 from Vishay Siliconix is an 800 V, 15 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.250 Ω at V_GS = 10 V, Q_g = 41 nC (typ), and avalanche-rated E_AS = 127 mJ - designed for high-voltage switching in telecom PFC stages and solar PV inverters.

For engineers reviewing the SIHG17N80AE-GE3 datasheet, SIHG17N80AE-GE3 pinout, SIHG17N80AE-GE3 application, or SIHG17N80AE-GE3 equivalent, this device is evaluated for high-efficiency, high-reliability hard-switched topologies requiring low conduction loss, controlled dv/dt (100 V/ns), and robust unclamped inductive switching capability.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for reduced figure-of-merit (R_DS(on) × Q_g = 10.3 Ω·nC typ) and low effective output capacitance (C_o(er) = 40 pF), enabling faster switching with lower energy loss in 640–800 V DC-link applications.

It integrates a fast-recovery body diode (t_rr = 314 ns typ, Q_rr = 4 μC) and supports gate drive with ±30 V V_GS rating, while maintaining stable V_GS(th) (2–4 V) and low I_DSS (≤1 μA at 800 V) across -55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 640 V DC-link designs with 25 % margin for voltage transients in PFC and inverter stages
R_DS(on) typ @ 10 V	0.250 Ω - enables ≤3.2 W conduction loss at 8.5 A continuous drain current (T_C = 100 °C)
Q_g max	62 nC - determines gate drive power requirement and influences turn-on/turn-off timing in hard-switched converters
E_AS	127 mJ - rated single-pulse avalanche energy ensures ruggedness during inductive switching faults without derating
C_o(er)	40 pF - low energy-related output capacitance reduces turn-off loss and improves efficiency in high-frequency SMPS
t_r/t_f	23/31 ns typ - fast switching transitions minimize overlap loss in ZVS/ZCS-limited topologies
R_thJC	0.7 °C/W - enables high-power dissipation (179 W) with minimal thermal resistance to heatsink interface

Pinout & Package

SIHG17N80AE-GE3 uses the TO-247AC package - a through-hole, high-voltage variant of JEDEC TO-247 with 4-terminal configuration (Drain double-bonded), optimized for low-inductance layout and thermal performance. Thermal pad optional; lead finish uncontrolled per L1 specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; V_GS(th) = 2–4 V ensures reliable turn-on with standard PWM controllers
2 (Drain)	High-side power switch node	Double-bonded drain terminal minimizes package inductance and improves dv/dt immunity up to 100 V/ns
3 (Source)	Reference node for gate drive and current sensing	Low-impedance source path supports accurate current monitoring and stable gate control loop grounding
4 (Drain)	Secondary drain connection	Reduces current density and thermal stress at drain bond wires; critical for 15 A continuous operation at T_C = 100 °C

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	10.3 Ω·nC typ - balances conduction and switching losses for optimal efficiency in 65–100 kHz PFC and inverter designs
Avalanche energy rating	127 mJ single-pulse - eliminates need for external snubbers in flyback or LLC resonant converter primary switches
Low C_o(er)	40 pF - reduces stored energy (E_oss) and improves light-load efficiency in high-voltage DC-DC converters
Fast body diode recovery	t_rr = 314 ns, Q_rr = 4 μC - minimizes reverse recovery loss and EMI in synchronous rectification and bidirectional topologies
High dv/dt immunity	100 V/ns at T_J = 125 °C - prevents false turn-on in high-noise industrial motor drives and welding inverters

Applications

Server Power Supply PFC Stage	Solar PV Inverter DC-Link Switch
Use Scenario: Boost-type active PFC front-end operating at 65–100 kHz with 400–800 V DC output. IC Role / Device Role / Timing Role: Main switching device handling full-line input current; operates in hard-switched mode with zero-current turn-on. Use Value: Low R_DS(on) and Q_g reduce total losses by ≥8 % vs. legacy 800 V MOSFETs, improving system efficiency from 96.2 % to 97.0 % at full load.	Use Scenario: Two-level or three-level inverter stage converting 600–1000 V DC bus to 50/60 Hz AC grid output. IC Role / Device Role / Timing Role: High-side switching element in NPC or T-type topology; subjected to repetitive 640 V blocking and 15 A peak current. Use Value: Avalanche rating and 0.7 °C/W R_thJC allow sustained 15 A operation without forced air cooling, reducing heatsink size by 35 %.
Industrial Welding Inverter	Fluorescent Ballast Lighting
Use Scenario: IGBT replacement in 20–50 kHz resonant inverter for arc welding power supplies. IC Role / Device Role / Timing Role: Primary-side switch in half-bridge configuration; experiences high di/dt (>100 A/μs) and voltage overshoot during current commutation. Use Value: 100 V/ns dv/dt rating and 127 mJ E_AS prevent parasitic turn-on and ensure fault tolerance during short-circuit events.	Use Scenario: High-frequency electronic ballast driving 40–100 W fluorescent lamps at 25–65 kHz. IC Role / Device Role / Timing Role: Resonant switch in series-resonant half-bridge; conducts 8.5 A RMS with body diode freewheeling. Use Value: Fast t_rr (314 ns) and low Q_rr (4 μC) suppress ringing and reduce EMI filter component count by 2–3 parts per channel.

Server Power Supply PFC Stage

Solar PV Inverter DC-Link Switch

Use Scenario: Boost-type active PFC front-end operating at 65–100 kHz with 400–800 V DC output.

IC Role / Device Role / Timing Role: Main switching device handling full-line input current; operates in hard-switched mode with zero-current turn-on.

Use Value: Low R_DS(on) and Q_g reduce total losses by ≥8 % vs. legacy 800 V MOSFETs, improving system efficiency from 96.2 % to 97.0 % at full load.

Use Scenario: Two-level or three-level inverter stage converting 600–1000 V DC bus to 50/60 Hz AC grid output.

IC Role / Device Role / Timing Role: High-side switching element in NPC or T-type topology; subjected to repetitive 640 V blocking and 15 A peak current.

Use Value: Avalanche rating and 0.7 °C/W R_thJC allow sustained 15 A operation without forced air cooling, reducing heatsink size by 35 %.

Industrial Welding Inverter

Fluorescent Ballast Lighting

Use Scenario: IGBT replacement in 20–50 kHz resonant inverter for arc welding power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge configuration; experiences high di/dt (>100 A/μs) and voltage overshoot during current commutation.

Use Value: 100 V/ns dv/dt rating and 127 mJ E_AS prevent parasitic turn-on and ensure fault tolerance during short-circuit events.

Use Scenario: High-frequency electronic ballast driving 40–100 W fluorescent lamps at 25–65 kHz.

IC Role / Device Role / Timing Role: Resonant switch in series-resonant half-bridge; conducts 8.5 A RMS with body diode freewheeling.

Use Value: Fast t_rr (314 ns) and low Q_rr (4 μC) suppress ringing and reduce EMI filter component count by 2–3 parts per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK80Z	800 V, 20 A, R_DS(on) = 0.32 Ω, Q_g = 75 nC, TO-247 long leads	Higher conduction loss and slower switching; suited for lower-frequency (<50 kHz), higher-current applications	Prefer SIHG17N80AE-GE3 where efficiency >96.5 % and compact heatsinking are required
IXFH16N80X	800 V, 16 A, R_DS(on) = 0.29 Ω, Q_g = 48 nC, TO-247 non-isolated	Lower Q_g than STW20NK80Z but higher R_DS(on); no avalanche rating specified	Choose SIHG17N80AE-GE3 when unclamped inductive switching reliability is mandatory

Compared with STW20NK80Z and IXFH16N80X, SIHG17N80AE-GE3 delivers superior FOM (10.3 vs. 24.0 and 13.9 Ω·nC), guaranteed avalanche ruggedness, and tighter V_GS(th) distribution - making it optimal for high-efficiency, high-reliability 640–800 V hard-switched systems.

Availability

SIHG17N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial welding equipment requiring stable component supply and long-term production continuity.

Supply support for SIHG17N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHG17N80AE-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for demanding 600–1000 V switching applications in telecom, renewable energy, and industrial power conversion.

FAQ

What is the maximum continuous drain current for SIHG17N80AE-GE3 at 100 °C case temperature?

The SIHG17N80AE-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for linear derating beyond 25 °C ambient, with a derating factor of 1.4 W/°C above 25 °C case temperature. The device maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHG17N80AE-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHG17N80AE-GE3 is fully rated for single-pulse avalanche energy (E_AS = 127 mJ), tested per JEDEC JESD24-11 under conditions: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3 A. This rating confirms ruggedness against inductive switching faults without requiring external clamping circuits in properly designed layouts.

What is the gate threshold voltage range for SIHG17N80AE-GE3, and why does it matter for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHG17N80AE-GE3 is specified as 2–4 V at I_D = 250 μA. This tight range ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with standard 10 V gate drivers while avoiding unintended conduction from noise coupling - critical in high-dv/dt environments like motor drives and welders.

How does the body diode performance of SIHG17N80AE-GE3 compare to standard MOSFETs in high-frequency applications?

The SIHG17N80AE-GE3 features a fast-recovery body diode with t_rr = 314 ns (typ) and Q_rr = 4 μC at T_J = 25 °C, significantly better than standard high-voltage MOSFETs (typically >500 ns and >10 μC). This reduces reverse recovery loss and associated EMI, making SIHG17N80AE-GE3 suitable for quasi-resonant and synchronous rectifier topologies where diode conduction occurs regularly.

Is SIHG17N80AE-GE3 RoHS-compliant and halogen-free, and what does the "-GE3" suffix indicate?

Yes, SIHG17N80AE-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section. The "-GE3" suffix denotes Vishay's standard green, lead-free, halogen-free packaging compliant with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and RoHS Directive 2011/65/EU, with peak reflow temperature of 260 °C for 10 seconds.

SIHG17N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 179W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG17N80AE-GE3 FAQ

1.How can I place an order for SIHG17N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG17N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG17N80AE-GE3 reliable?

The price and inventory of SIHG17N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG17N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG17N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG17N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG17N80AE-GE3?

SIHG17N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG17N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG17N80AE-GE3?

For technical support, including SIHG17N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG17N80AE-GE3 requirements.

6.How does Aetrix verify that SIHG17N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG17N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG17N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG17N80AE-GE3?

All SIHG17N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG17N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG17N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHG17N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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