Vishay Siliconix SIHG186N60EF-GE3

Overview

SIHG186N60EF-GE3 from Vishay Siliconix is a 600 V, 18 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.168 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and fast body diode with 111 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHG186N60EF-GE3 datasheet, SIHG186N60EF-GE3 pinout, SIHG186N60EF-GE3 application, or SIHG186N60EF-GE3 equivalent, key selection criteria include its 600 V V_DS rating, avalanche-rated 24 mJ E_AS, Co(er) of 40 pF for reduced switching loss, and TO-247AC thermal performance with R_thJC = 0.8 °C/W.

Technical Context

This EF Series MOSFET employs Vishay's 4th-generation E-series technology optimized for high-voltage, medium-current applications requiring low FOM (R_DS(on) × Q_g) and minimized effective output capacitance. Its fast intrinsic body diode supports ZVS-capable topologies and reduces snubber demands in bridge configurations.

The device integrates an avalanche-energy-rated structure (E_AS = 24 mJ) and exhibits stable V_DS temperature coefficient (+0.69 V/°C), enabling predictable breakdown behavior across -55 to +150 °C operation. Gate threshold voltage (3.0–5.0 V) and low gate leakage (<100 nA at ±20 V) support robust drive margin in noisy industrial environments.

Key Specifications

Pinout & Package

SIHG186N60EF-GE3 uses the TO-247AC package - a through-hole, single-ended, high-voltage power package with isolated drain tab and 3-pin configuration. The plastic body includes a thermal pad (D1/E1 optional per version) and conforms to JEDEC TO-247 outline with facility-code-specific dimensional variants (9/Y/N).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW48N60M2 and IXFH32N60P, SIHG186N60EF-GE3 offers superior balance of low Q_g, rated avalanche energy, and fast body diode-making it optimal for efficiency-critical, reliability-demanding PFC and resonant converter designs where driver simplicity and fault tolerance are prioritized over raw current capacity.

Availability

SIHG186N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for SIHG186N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.

The EF Series, including SIHG186N60EF-GE3, was engineered specifically for high-efficiency, high-reliability hard-switched and resonant power conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for SIHG186N60EF-GE3 at 100 °C case temperature?

The SIHG186N60EF-GE3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 18 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit under typical heatsink conditions.

Does SIHG186N60EF-GE3 have a fully rated avalanche capability, and what is its E_AS value?

Yes, SIHG186N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 24 mJ, tested per standard conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.3 A). This rating is guaranteed and characterized across temperature, enabling robust fault handling without external snubbers.

What is the gate-source threshold voltage range for SIHG186N60EF-GE3, and how does it affect drive design?

The gate-source threshold voltage (V_GS(th)) for SIHG186N60EF-GE3 is specified from 3.0 V to 5.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient margin against noise-induced false triggering-critical in high-dv/dt power converter environments where SIHG186N60EF-GE3 operates.

Can SIHG186N60EF-GE3 be used in place of an IGBT in a solar inverter DC link stage?

Yes, SIHG186N60EF-GE3 is qualified for IGBT replacement in 600 V-class solar inverter DC link stages due to its 600 V V_DS rating, 24 mJ E_AS, and low R_DS(on). Unlike most IGBTs, it offers faster switching and no tail current, reducing switching loss-but requires careful gate drive design to manage higher dv/dt and ensure clean turn-off in hard-switched topologies.

What is the thermal resistance from junction to case (R_thJC) for SIHG186N60EF-GE3, and why is it important?

The maximum junction-to-case thermal resistance (R_thJC) for SIHG186N60EF-GE3 is 0.8 °C/W. This low value reflects efficient heat transfer from the silicon die to the TO-247AC drain tab, enabling high-power dissipation (up to 156 W) with minimal temperature rise-essential for maintaining reliability and efficiency in compact, air-cooled power modules where SIHG186N60EF-GE3 is deployed.