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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N50D-E3

Name: SIHG22N50D-E3
Brand: Vishay Siliconix
SKU: SIHG22N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N50D-E3.pdf

Description:: MOSFET N-CH 500V 22A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG22N50D-E3 from Vishay Siliconix is a 500 V, 22 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.230 Ω @ V_GS = 10 V, Q_g = 98 nC, and avalanche-rated (E_AS = 139 mJ) operation-designed for high-efficiency SMPS in server and telecom power supplies.

For engineers reviewing the SIHG22N50D-E3 datasheet, SIHG22N50D-E3 pinout, SIHG22N50D-E3 application, or SIHG22N50D-E3 equivalent, this device supports fast-switching, low-conduction-loss topologies requiring rugged body diode performance, high dV/dt immunity (24 V/ns), and stable operation up to T_J = 150 °C.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage switching with low figure-of-merit (R_DS(on) × Q_g = 22.5 Ω·nC). Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining low leakage (I_DSS ≤ 1 μA @ 500 V).

The integrated body diode delivers I_S = 22 A continuous and I_SM = 88 A pulsed conduction, with t_rr = 384 ns and Q_rr = 4.7 μC at T_J = 25 °C-enabling robust freewheeling in hard-switched converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC bus designs with 25 % safety margin for transient overvoltage handling.
R_DS(on) max	0.230 Ω @ V_GS = 10 V - Enables <1.2 W conduction loss at 22 A, reducing heatsink requirements.
Q_g max	98 nC - Determines gate drive power requirement (~1.2 mW per MHz at 12 V drive); impacts switching loss trade-off.
E_AS	139 mJ - Rated unclamped inductive switching energy allows safe operation under short-circuit or overload conditions.
t_r/t_f	42/40 ns - Fast edge rates support >200 kHz PWM frequencies in phase-shifted full-bridge and LLC resonant converters.
R_thJC	0.4 °C/W - Enables high-power dissipation (312 W) with minimal junction-to-case thermal resistance for forced-air or heatsink cooling.
V_SD	1.2 V @ I_S = 11 A - Low forward drop reduces reverse recovery losses during synchronous rectification or freewheeling.

Pinout & Package

TO-247AC package: isolated tab (Drain), 3-pin through-hole outline with industry-standard footprint (D = 20.55 mm, E = 15.70 mm, L = 15.15 mm). Thermal pad optional; lead finish Pb-free per J-STD-609.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1938 pF dictates gate resistor selection for EMI-controlled switching.
2 (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to metal tab-requires isolation from heatsink unless floating design.
3 (Source)	Reference node / return path	Common reference for gate drive and current sensing; body diode anode-critical for layout symmetry in half-bridge configurations.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	22.5 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–300 kHz SMPS designs.
Avalanche energy rating	139 mJ single-pulse - Eliminates need for external clamping circuits in inductive load switching applications.
Rugged body diode	t_rr = 384 ns, Q_rr = 4.7 μC - Reduces diode-induced voltage spikes and EMI in discontinuous conduction mode (DCM) operation.
High dV/dt immunity	24 V/ns @ T_J = 125 °C - Prevents false turn-on in high-noise environments such as motor drives and welding inverters.
Pb-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709E - Suitable for industrial and telecom equipment with strict environmental compliance requirements.

Applications

Server SMPS	Telecom Rectifiers
Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch operating at 200 kHz with 500 V bus, managing energy transfer and zero-voltage switching transitions. Use Value: Low Q_gd/Q_g ratio (22/98) enables precise Miller plateau control, minimizing shoot-through risk during dead-time transitions.	Use Scenario: Output synchronous rectifier in redundant 12 V/200 A server VRM with multiphase buck architecture. IC Role / Device Role / Timing Role: Low-side power switch conducting 22 A continuously, synchronized to controller PWM signals. Use Value: R_DS(on) = 0.230 Ω limits conduction loss to <0.11 W per phase, supporting >95 % peak efficiency at full load.
Induction Heating Inverters	Battery Charger Stages
Use Scenario: Half-bridge leg switch in 5 kW domestic induction cooktop operating at 20–50 kHz resonant frequency. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element handling repetitive 67 A pulsed drain current and rapid polarity reversal. Use Value: Avalanche rating and 24 V/ns dV/dt immunity prevent failure during load transients and coil detuning events.	Use Scenario: Isolated DC-DC stage in 3 kW EV on-board charger converting 400 V battery to 12 V auxiliary supply. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge converter, switching at 100 kHz with soft-start sequencing. Use Value: Body diode Q_rr = 4.7 μC minimizes reverse recovery loss during ZVS transitions, improving light-load efficiency.

Server SMPS

Telecom Rectifiers

Use Scenario: Primary-side switch in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 200 kHz with 500 V bus, managing energy transfer and zero-voltage switching transitions.

Use Value: Low Q_gd/Q_g ratio (22/98) enables precise Miller plateau control, minimizing shoot-through risk during dead-time transitions.

Use Scenario: Output synchronous rectifier in redundant 12 V/200 A server VRM with multiphase buck architecture.

IC Role / Device Role / Timing Role: Low-side power switch conducting 22 A continuously, synchronized to controller PWM signals.

Use Value: R_DS(on) = 0.230 Ω limits conduction loss to <0.11 W per phase, supporting >95 % peak efficiency at full load.

Induction Heating Inverters

Battery Charger Stages

Use Scenario: Half-bridge leg switch in 5 kW domestic induction cooktop operating at 20–50 kHz resonant frequency.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element handling repetitive 67 A pulsed drain current and rapid polarity reversal.

Use Value: Avalanche rating and 24 V/ns dV/dt immunity prevent failure during load transients and coil detuning events.

Use Scenario: Isolated DC-DC stage in 3 kW EV on-board charger converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge converter, switching at 100 kHz with soft-start sequencing.

Use Value: Body diode Q_rr = 4.7 μC minimizes reverse recovery loss during ZVS transitions, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM50N	R_DS(on) = 0.22 Ω but Q_g = 75 nC; lower C_iss (1500 pF); no specified E_AS rating	Lacks avalanche qualification; requires external clamping in inductive loads	Preferable where gate drive loss dominates and avalanche stress is absent
IXFH22N50P	R_DS(on) = 0.24 Ω, Q_g = 85 nC; higher R_thJC (0.45 °C/W); rated for 550 V V_DS	Higher voltage margin but reduced thermal performance and slower t_r/t_f (60/55 ns)	Preferred in 480 V AC-input PFC stages needing extended breakdown headroom

Compared with STP22NM50N and IXFH22N50P, SIHG22N50D-E3 offers superior avalanche ruggedness and lower thermal resistance-making it optimal for high-reliability, high-stress industrial switching where fault tolerance and thermal management are critical.

Availability

SIHG22N50D-E3 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and induction heating inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG22N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The D Series Power MOSFETs-including SIHG22N50D-E3-are engineered for high-voltage, high-current switching in industrial power conversion, delivering optimized R_DS(on) × Q_g and rugged avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHG22N50D-E3 at 100 °C case temperature?

The SIHG22N50D-E3 supports 14 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. The full 22 A rating applies only at T_C = 25 °C.

Does SIHG22N50D-E3 have a qualified avalanche energy rating, and what is its value?

Yes, SIHG22N50D-E3 is fully rated for unclamped inductive switching with E_AS = 139 mJ (single-pulse, test condition: V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 11 A). This qualification is documented in the Absolute Maximum Ratings section and confirms robustness against inductive load transients without external protection.

What is the gate threshold voltage range for SIHG22N50D-E3, and how does it affect drive requirements?

The SIHG22N50D-E3 has a gate threshold voltage V_GS(th) of 3–5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. It does not support logic-level (5 V) drive without risk of incomplete enhancement, so 10 V minimum gate drive is recommended for full R_DS(on) performance.

How is the body diode performance of SIHG22N50D-E3 characterized, and why does it matter in hard-switched topologies?

The SIHG22N50D-E3 body diode is characterized by V_SD = 1.2 V @ I_S = 11 A, t_rr = 384 ns, and Q_rr = 4.7 μC at 25 °C. In hard-switched converters, these parameters directly impact reverse recovery loss, voltage overshoot, and EMI generation-making them critical for selecting snubber components and optimizing layout in flyback or forward converters.

Is SIHG22N50D-E3 compatible with standard TO-247AC heatsink mounting, and what thermal resistance can be expected?

Yes, SIHG22N50D-E3 uses the JEDEC TO-247AC outline with a metal tab serving as the Drain terminal and thermal path. Its maximum junction-to-case thermal resistance R_thJC is 0.4 °C/W, enabling efficient heat transfer to properly mounted heatsinks. Mounting requires electrically isolating the tab unless the heatsink is floating, due to Drain connection to the tab.

SIHG22N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1938 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 312W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N50D-E3 FAQ

1.How can I place an order for SIHG22N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N50D-E3 reliable?

The price and inventory of SIHG22N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHG22N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N50D-E3?

SIHG22N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N50D-E3?

For technical support, including SIHG22N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N50D-E3 requirements.

6.How does Aetrix verify that SIHG22N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHG22N50D-E3?

All SIHG22N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N50D-E3 part is unused and in its original packaging.

Return procedure for SIHG22N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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