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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N60AEL-GE3

Name: SIHG22N60AEL-GE3
Brand: Vishay Siliconix
SKU: SIHG22N60AEL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N60AEL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N60AEL-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO247AC

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Product details

Overview

SIHG22N60AEL-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.155 Ω (typ.) at V_GS = 10 V, Q_g = 41 nC (typ.), and E_AS = 183 mJ - optimized for high-efficiency switch-mode power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHG22N60AEL-GE3 datasheet, SIHG22N60AEL-GE3 pinout, SIHG22N60AEL-GE3 application, or SIHG22N60AEL-GE3 equivalent, key selection criteria include avalanche-rated ruggedness, low gate charge for ZVS/ZCS topologies, 600 V blocking capability with 150 °C T_J rating, and lead-free/halogen-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-assisted field shaping to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of 6.36 Ω·nC. Its C_iss = 1757 pF and C_oss = 74 pF support fast switching with controlled dv/dt (50 V/ns max) and reduced EMI in hard-switched converters.

The integrated body diode exhibits t_rr = 285 ns (typ.) and Q_rr = 4.1 μC (typ.) at I_F = 11 A, enabling reliable operation in bridge-leg configurations without external anti-parallel diodes in many PFC and inverter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified systems with ≥50 V margin for transient overvoltage in telecom/server SMPS
R_DS(on) (typ.)	0.155 Ω at V_GS = 10 V, I_D = 11 A - enables <1.9 W conduction loss at 11 A, reducing heatsink requirements
Q_g (typ.)	41 nC - lowers gate drive power and allows use of smaller gate drivers in high-frequency (>100 kHz) PFC designs
E_AS	183 mJ - provides unclamped inductive switching robustness for motor drives and welder output stages
t_rr	285 ns (typ.) - minimizes commutation losses and shoot-through risk in synchronous rectification and half-bridge topologies
R_thJC	0.6 °C/W - enables 208 W power dissipation with ≤125 °C case-to-ambient ΔT using standard TO-247 heatsinking

Pinout & Package

TO-247AC package: isolated tab (drain), 3-pin through-hole mounting, JEDEC-standard outline with drain-connected metal tab for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal for channel inversion	Low-input-capacitance node (C_iss = 1757 pF); requires <10 Ω series resistance to damp ringing in >100 kHz applications
Drain (Pin 2 / Tab)	High-voltage power output node	Electrically and thermally connected to package tab; must be insulated from heatsink unless system ground-referenced
Source (Pin 3)	Reference node for gate drive and current sensing	Low-inductance return path; recommended for Kelvin source connection in precision current monitoring

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	6.36 Ω·nC - improves efficiency in both conduction and switching domains versus legacy 600 V MOSFETs
Avalanche energy rated (E_AS)	183 mJ single-pulse - eliminates need for external snubbers in inductive load switching (e.g., welding, motor drives)
Low C_oss (74 pF)	Reduces turn-off loss and improves light-load efficiency in resonant LLC converters
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912)
150 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.5 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100 kHz switching frequency. Use Value: Low Q_g reduces gate driver losses; 183 mJ E_AS withstands clamp capacitor discharge transients without failure.	Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched 600 V bridge leg device operating at 16–20 kHz with unidirectional current flow. Use Value: 0.155 Ω R_DS(on) limits conduction loss to <2.5 W at 11 A; t_rr = 285 ns prevents cross-conduction during dead-time.
PFC Boost Converter	Industrial Motor Drive
Use Scenario: Continuous conduction mode (CCM) boost switch in 5 kW server front-end PFC. IC Role / Device Role / Timing Role: Unidirectional high-side switch with 600 V blocking and 21 A continuous current capability. Use Value: Low C_iss (1757 pF) enables clean gate drive waveform; Q_rr = 4.1 μC minimizes reverse recovery loss in critical conduction mode (CrCM).	Use Scenario: Inverter output stage driving 7.5 kW induction motor with regenerative braking. IC Role / Device Role / Timing Role: Bidirectional current-handling switch in 3-phase IGBT replacement configuration. Use Value: Body diode t_rr and Q_rr allow safe freewheeling during PWM dead-time; 150 °C T_J rating supports compact heatsink design.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100 kHz switching frequency.

Use Value: Low Q_g reduces gate driver losses; 183 mJ E_AS withstands clamp capacitor discharge transients without failure.

Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched 600 V bridge leg device operating at 16–20 kHz with unidirectional current flow.

Use Value: 0.155 Ω R_DS(on) limits conduction loss to <2.5 W at 11 A; t_rr = 285 ns prevents cross-conduction during dead-time.

PFC Boost Converter

Industrial Motor Drive

Use Scenario: Continuous conduction mode (CCM) boost switch in 5 kW server front-end PFC.

IC Role / Device Role / Timing Role: Unidirectional high-side switch with 600 V blocking and 21 A continuous current capability.

Use Value: Low C_iss (1757 pF) enables clean gate drive waveform; Q_rr = 4.1 μC minimizes reverse recovery loss in critical conduction mode (CrCM).

Use Scenario: Inverter output stage driving 7.5 kW induction motor with regenerative braking.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch in 3-phase IGBT replacement configuration.

Use Value: Body diode t_rr and Q_rr allow safe freewheeling during PWM dead-time; 150 °C T_J rating supports compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM60ND	R_DS(on) = 0.18 Ω (typ.), Q_g = 45 nC, TO-247 long leads; no specified E_AS rating	Lacks avalanche ruggedness specification; requires external clamping in inductive switching	Prefer SIHG22N60AEL-GE3 where unclamped inductive energy >100 mJ is expected
IXTH24N60L2	R_DS(on) = 0.165 Ω (typ.), Q_g = 52 nC, 650 V rating; higher C_iss = 2200 pF	Higher switching loss at >100 kHz; wider V_DS margin but lower efficiency in 400 V DC bus	Choose SIHG22N60AEL-GE3 for optimized FOM in 100–200 kHz PFC and SMPS

Compared with STW22NM60ND and IXTH24N60L2, SIHG22N60AEL-GE3 delivers the lowest R_DS(on) × Q_g FOM and highest certified avalanche energy, making it preferred for rugged, high-frequency 600 V switching where reliability under transient stress is critical.

Availability

SIHG22N60AEL-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for SIHG22N60AEL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHG22N60AEL-GE3 belongs to Vishay's EL Series Power MOSFET family, engineered for high-efficiency, high-reliability switching in demanding industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHG22N60AEL-GE3 at 100 °C case temperature?

The SIHG22N60AEL-GE3 has a continuous drain current rating of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Does SIHG22N60AEL-GE3 support gate drive voltages below 10 V?

Yes, SIHG22N60AEL-GE3 has a gate threshold voltage V_GS(th) range of 2.0–4.0 V, allowing operation with logic-level gate drivers. However, R_DS(on) is only guaranteed at V_GS = 10 V; at 5 V, on-resistance increases significantly and is not characterized in the datasheet for this part.

Is SIHG22N60AEL-GE3 suitable for use in zero-voltage switching (ZVS) circuits?

Yes, SIHG22N60AEL-GE3 is well-suited for ZVS applications due to its low Q_g (41 nC typ.) and low C_oss (74 pF), which reduce switching transition time and energy loss. Its 600 V rating and 183 mJ E_AS also support reliable soft-switching in phase-shifted full-bridge and LLC resonant converters.

What is the thermal resistance from junction to case (R_thJC) for SIHG22N60AEL-GE3?

The maximum junction-to-case thermal resistance R_thJC for SIHG22N60AEL-GE3 is 0.6 °C/W, as stated in the Thermal Resistance Ratings table. This value enables efficient heat transfer from the die to the heatsink via the drain-connected metal tab in the TO-247AC package.

How does the body diode performance of SIHG22N60AEL-GE3 compare to discrete ultrafast diodes?

The SIHG22N60AEL-GE3 body diode has t_rr = 285 ns (typ.) and Q_rr = 4.1 μC (typ.) at I_F = 11 A, which is competitive with many discrete 600 V ultrafast diodes. While not as fast as dedicated SiC Schottky diodes, its integrated design eliminates layout parasitics and simplifies PCB routing in half-bridge and synchronous rectifier applications.

SIHG22N60AEL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EL

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1757 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N60AEL-GE3 FAQ

1.How can I place an order for SIHG22N60AEL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N60AEL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N60AEL-GE3 reliable?

The price and inventory of SIHG22N60AEL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60AEL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG22N60AEL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60AEL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N60AEL-GE3?

SIHG22N60AEL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N60AEL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N60AEL-GE3?

For technical support, including SIHG22N60AEL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60AEL-GE3 requirements.

6.How does Aetrix verify that SIHG22N60AEL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N60AEL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60AEL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG22N60AEL-GE3?

All SIHG22N60AEL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60AEL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N60AEL-GE3 part is unused and in its original packaging.

Return procedure for SIHG22N60AEL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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