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Vishay Siliconix SIHG25N50E-GE3
- Part No.:
- SIHG25N50E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG25N50E-GE3.pdf
- Description:
- MOSFET N-CH 500V 26A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,240
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Product details
Overview
SIHG25N50E-GE3 from Vishay Siliconix is a 500 V, 25 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring RDS(on) = 0.145 Ω @ VGS = 10 V, Qg = 86 nC, and avalanche-rated (EAS = 273 mJ). It delivers low conduction and switching losses for high-efficiency hard-switched PFC and SMPS stages in ATX power supplies and two-stage LED drivers.
For engineers reviewing the SIHG25N50E-GE3 datasheet, SIHG25N50E-GE3 pinout, SIHG25N50E-GE3 application, or SIHG25N50E-GE3 equivalent, key selection criteria include its 500 V VDS rating, 0.145 Ω on-resistance at 10 V gate drive, 86 nC total gate charge, avalanche ruggedness, and TO-247AC thermal performance with RthJC = 0.5 °C/W.
Technical Context
This device employs planar stripe silicon technology optimized for high-voltage switching with controlled dV/dt (65 V/ns) and robust body diode recovery (trr = 338 ns, Qrr = 5.3 μC). Its low Ciss (1980 pF) and Coss (105 pF) support fast, efficient hard-switching operation above 100 kHz.
The MOSFET is characterized for continuous operation up to TJ = 150 °C, with RDS(on) exhibiting +0.59 V/°C temperature coefficient and derated current handling (16 A @ TC = 100 °C). Its unclamped inductive switching capability is validated per JEDEC JESD24-11 with EAS = 273 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports primary-side switching in universal-input PFC and offline SMPS without derating |
| RDS(on) max | 0.145 Ω @ VGS = 10 V - Enables <1.8 W conduction loss at 12 A DC, critical for thermal management in compact ATX designs |
| Qg | 86 nC - Determines gate driver power requirement and switching speed; enables <100 ns turn-off delay with 9.1 Ω gate resistor |
| EAS | 273 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under transient overvoltage conditions in inductive loads |
| trr / Qrr | 338 ns / 5.3 μC - Quantifies body diode reverse recovery behavior; impacts cross-conduction loss and EMI in synchronous rectification |
| RthJC | 0.5 °C/W - Enables 250 W power dissipation with ≤125 °C junction rise above 25 °C case, supporting high-power density layouts |
| ID continuous | 26 A @ TC = 25 °C - Specifies maximum steady-state current under ideal heatsinking; derates linearly to 16 A at 100 °C case |
Pinout & Package
SIHG25N50E-GE3 is housed in a TO-247AC package with isolated drain tab, rated for high-voltage isolation and optimized for vertical heat transfer via the metal backside. The package complies with JEDEC TO-247 outline and supports >250 W power dissipation with proper heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level gate drive; requires <86 nC charge for full enhancement; sensitive to ESD (±30 V rating) |
| 2 (Drain) | High-side power output | Connected to primary HV rail (e.g., 400 V PFC bus); electrically tied to metal tab for thermal path and voltage isolation |
| 3 (Source) | Power return reference | Serves as common return for gate drive and load current; defines local ground for control circuitry |
| 4 (Drain) | Redundant drain connection | Second drain terminal provides parallel current path and enhanced thermal conduction to heatsink; not electrically isolated from Pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Low figure-of-merit (RDS(on) × Qg) | 12.4 Ω·nC - Balances conduction and switching losses for optimal efficiency across 50–200 kHz PFC operating range |
| Avalanche energy rating (EAS) | 273 mJ - Eliminates need for external snubbers in clamp circuits and improves system robustness during line surges |
| Low Ciss and Coss | 1980 pF / 105 pF - Reduces capacitive switching loss and eases gate driver design; supports ZVS-compatible topologies |
| Body diode softness (Qrr/IRRM) | 5.3 μC / 29 A - Limits voltage overshoot and ringing during diode commutation, reducing EMI filter burden |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| ATX Power Supply PFC Stage | Industrial SMPS Primary Switch |
|---|---|
|
Use Scenario: Boost converter in universal-input (90–264 VAC), 500 W PC silver box power supply. IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) PFC controller stage, switching at 65–135 kHz. Use Value: Low Qg and RDS(on) enable >95% PFC efficiency at full load while maintaining junction temperature <125 °C with standard heatsink. |
Use Scenario: Primary-side switch in 300 W industrial open-frame SMPS for factory automation I/O modules. IC Role / Device Role / Timing Role: Hard-switched MOSFET in flyback or forward topology operating at 100 kHz with 500 V reflected voltage. Use Value: 500 V VDS rating and 273 mJ EAS ensure reliable operation under 400 V DC bus transients and transformer leakage spikes. |
| Two-Stage LED Driver | Server PSU Hold-Up Circuit |
|
Use Scenario: High-voltage buck-boost switch in outdoor LED streetlight driver with active PFC + constant-current stage. IC Role / Device Role / Timing Role: Second-stage HV switch regulating 40–80 V string voltage from 400 V PFC output, switching at 120 kHz. Use Value: Low Coss (105 pF) minimizes turn-on loss during zero-voltage transition, improving thermal margin in sealed luminaires. |
Use Scenario: Energy storage discharge switch in 12 V server PSU hold-up capacitor bank during AC dropout. IC Role / Device Role / Timing Role: Controlled turn-off switch isolating bulk caps from load during brownout, rated for repetitive 50 A pulsed current. Use Value: 50 A IDM rating and low RDS(on) ensure minimal voltage drop (<0.75 V) during 10 ms hold-up, preserving system uptime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK50Z | 500 V, 20 A, RDS(on) = 0.22 Ω, Qg = 55 nC, TO-247 package | Lower gate charge but higher on-resistance; lower current rating limits use in >400 W PFC | Preferable where gate drive strength is constrained but thermal headroom allows higher RDS(on) |
| IXFH24N50P | 500 V, 24 A, RDS(on) = 0.18 Ω, Qg = 72 nC, TO-247 package | Higher RDS(on) and lower EAS (180 mJ); no specified trr/Qrr data | Suitable for non-critical SMPS where body diode recovery is not stressed, but not recommended for PFC |
Compared with STW20NK50Z and IXFH24N50P, SIHG25N50E-GE3 offers superior conduction efficiency (0.145 Ω vs. ≥0.18 Ω), higher avalanche ruggedness (273 mJ), and documented fast body diode recovery-making it the preferred choice for high-reliability, high-efficiency PFC and hard-switched SMPS designs.
Availability
SIHG25N50E-GE3 is available at Aetrix Electronics and suitable for ATX power supplies, industrial SMPS, two-stage LED drivers, and server PSU hold-up circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHG25N50E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIHG25N50E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability hard-switched topologies including PFC, SMPS, and lighting ballasts.
FAQ
What is the maximum continuous drain current rating for SIHG25N50E-GE3 at 100 °C case temperature?
The SIHG25N50E-GE3 has a continuous drain current rating of 16 A when the case temperature is maintained at 100 °C. This value is derived from its 26 A rating at 25 °C case temperature and a linear derating factor of 0.2 W/°C, ensuring safe operation within thermal limits under real-world heatsink conditions. The SIHG25N50E-GE3 datasheet specifies this explicitly in the Absolute Maximum Ratings table.
Does SIHG25N50E-GE3 have an avalanche-rated specification, and what is its value?
Yes, the SIHG25N50E-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 273 mJ. This rating is measured under standardized conditions (VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, IAS = 4.4 A) and confirms robustness against transient overvoltage events without external protection. The SIHG25N50E-GE3 datasheet documents this in both the Absolute Maximum Ratings and Product Summary sections.
What is the gate threshold voltage range for SIHG25N50E-GE3, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for SIHG25N50E-GE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement and low RDS(on). The SIHG25N50E-GE3 must be driven with a clean, well-regulated 10–15 V gate signal to ensure reliable switching and avoid partial turn-on losses.
How is the body diode performance of SIHG25N50E-GE3 characterized, and why does it matter in PFC designs?
The SIHG25N50E-GE3 body diode is characterized with reverse recovery time (trr) of 338 ns and reverse recovery charge (Qrr) of 5.3 μC at TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, and VR = 25 V. In PFC boost stages, these parameters directly impact switching loss, EMI generation, and stress on the companion diode-making low Qrr critical for efficiency and thermal stability. The SIHG25N50E-GE3 datasheet provides full diode characterization in the Specifications section.
What package type does SIHG25N50E-GE3 use, and what are its thermal advantages?
The SIHG25N50E-GE3 uses the TO-247AC package, which features a thermally enhanced metal tab and dual drain terminals (Pins 2 and 4) for improved heat transfer and current sharing. Its maximum junction-to-case thermal resistance (RthJC) is 0.5 °C/W, enabling 250 W power dissipation with only 125 °C temperature rise above case-critical for high-density power supplies. The SIHG25N50E-GE3 package dimensions and thermal specs are detailed in Vishay document #91360.
SIHG25N50E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 145mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1980 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG25N50E-GE3 FAQ
1.How can I place an order for SIHG25N50E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG25N50E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG25N50E-GE3 reliable?
The price and inventory of SIHG25N50E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG25N50E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG25N50E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG25N50E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG25N50E-GE3?
SIHG25N50E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG25N50E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG25N50E-GE3?
For technical support, including SIHG25N50E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG25N50E-GE3 requirements.
6.How does Aetrix verify that SIHG25N50E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG25N50E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG25N50E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG25N50E-GE3?
All SIHG25N50E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG25N50E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG25N50E-GE3 part is unused and in its original packaging.
Return procedure for SIHG25N50E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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