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Vishay Siliconix SIHG25N60EFL-GE3
- Part No.:
- SIHG25N60EFL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG25N60EFL-GE3.pdf
- Description:
- MOSFET N-CH 600V 25A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:8,580
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Product details
Overview
SIHG25N60EFL-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring fast body diode (trr = 138 ns typ.), low gate charge (Qg = 50 nC typ.), and avalanche-rated ruggedness (EAS = 353 mJ). It serves as a high-voltage switching device in telecom and industrial DC-DC converters and PV inverter half-bridges.
For engineers reviewing the SIHG25N60EFL-GE3 datasheet, SIHG25N60EFL-GE3 pinout, SIHG25N60EFL-GE3 application, or SIHG25N60EFL-GE3 equivalent, key selection criteria include RDS(on) = 0.127 Ω @ 10 V, dV/dt capability of 70 V/ns, and UIS-rated operation under unclamped inductive switching stress.
Technical Context
This E-series MOSFET employs optimized silicon process and cell layout to reduce figure-of-merit (RDS(on) × Qg), enabling high-efficiency hard-switching in 480 V bus applications. Its fast intrinsic body diode minimizes reverse recovery losses during synchronous rectification or freewheeling phases.
The device integrates an avalanche-energy-rated structure (353 mJ single-pulse) and exhibits low Ciss (2274 pF) and Crss (4 pF), supporting clean turn-on/turn-off waveforms with minimal Miller-induced oscillation in high-dV/dt environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 480 V DC bus designs with 20 % margin for voltage transients |
| RDS(on) typ | 0.127 Ω @ VGS = 10 V - enables <2.5 W conduction loss at 12.5 A continuous drain current |
| Qg max | 75 nC - determines gate driver power requirement and switching speed control |
| trr typ | 138 ns - reduces diode recovery energy loss and EMI generation in hard-commutated topologies |
| EAS | 353 mJ - guarantees safe operation under unclamped inductive switching without external snubbers |
| dV/dt rating | 70 V/ns - ensures immunity to parasitic turn-on in high-speed bridge configurations |
| PD max | 250 W - defines maximum steady-state power dissipation with case-to-heat-sink thermal interface |
Pinout & Package
TO-247AC package with isolated drain tab, 3-pin through-hole mounting, and JEDEC-compliant mechanical dimensions (D = 20.55 mm, E = 15.70 mm, L = 15.15 mm). Thermal pad optional per version; lead finish Pb-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | High-impedance MOS gate requiring ≤10 V drive; Rg = 9.1 Ω used in switching time test |
| 2 (Drain) | High-side power terminal | Connected to heatsink via isolated metal tab; carries full load current and withstands 600 V potential |
| 3 (Source) | Power return / reference node | Common return path for load current and gate drive reference; ties to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 138 ns typ., Qrr = 0.8 μC - cuts diode recovery loss by >40 % vs. standard 600 V MOSFETs |
| Low RDS(on) × Qg FOM | 9.56 Ω·nC - improves trade-off between conduction and switching loss in 100–300 kHz SMPS |
| Avalanche energy rating | EAS = 353 mJ - eliminates need for external clamping in UPS and welding inverter output stages |
| Low Crss | 4 pF - suppresses Miller-induced false turn-on during high dV/dt transitions in half-bridge legs |
| High dV/dt immunity | 70 V/ns - maintains stable gate bias under rapid drain voltage slew in string PV inverters |
Applications
| Telecom Power Supply | Industrial UPS |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 380 V output LLC resonant converter for server PSUs. IC Role / Device Role / Timing Role: High-voltage switching element operating at 200–300 kHz with zero-voltage switching assistance. Use Value: Low Qg and fast trr enable high-frequency operation while minimizing dead-time losses and EMI filter size. | Use Scenario: Output inverter leg in 3-phase online UPS delivering 10 kVA with battery backup. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–12 kHz PWM inverter stage driving transformer-coupled output. Use Value: Avalanche rating and robust body diode allow direct substitution without snubber redesign or gate drive changes. |
| String PV Inverter | Induction Heating |
Use Scenario: DC-link switch in 1000 V string inverter MPPT stage feeding full-bridge inverter. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling 600 V DC bus with transient overvoltage protection. Use Value: 70 V/ns dV/dt rating prevents spurious turn-on during lightning surge events on solar array inputs. | Use Scenario: Half-bridge switch in 20–50 kHz resonant tank for domestic induction cooktops. IC Role / Device Role / Timing Role: Fast freewheeling path provider during zero-current switching transitions. Use Value: Low Qrr and fast trr reduce heating in body diode during high-frequency reverse recovery cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NM60ND | RDS(on) = 0.22 Ω @ 10 V; Qg = 45 nC; trr = 220 ns; TO-247 package | Higher conduction loss but lower gate charge; slower body diode increases recovery loss in ZVS circuits | Prefer when gate drive strength is limited and switching frequency <150 kHz |
| IXFH24N60P | RDS(on) = 0.21 Ω @ 10 V; Qg = 72 nC; no specified trr or Qrr; TO-247 package | Lacks documented fast-body-diode performance; avalanche rating not specified in datasheet | Acceptable where body diode conduction is avoided via synchronous control or external diodes |
Compared with STW20NM60ND and IXFH24N60P, SIHG25N60EFL-GE3 delivers superior switching efficiency in hard-commutated topologies due to its combination of low RDS(on), low Qg, and verified fast trr/Qrr - critical for telecom PSUs and PV inverters where thermal headroom is constrained.
Availability
SIHG25N60EFL-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, industrial UPS systems, and renewable energy inverters requiring stable component supply across multi-year production cycles.
Supply support for SIHG25N60EFL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The E Series Power MOSFET product line targets high-efficiency, high-voltage switching in telecom, computing, and industrial power conversion-designed specifically to reduce RDS(on) × Qg and improve body diode performance over legacy 600 V devices.
FAQ
What is the maximum continuous drain current rating for SIHG25N60EFL-GE3 at 100 °C case temperature?
The SIHG25N60EFL-GE3 has a continuous drain current rating of 16 A at TC = 100 °C, derated linearly from 25 A at TC = 25 °C using a 2 W/°C derating factor. This reflects thermal limitations of the TO-247AC package under real-world heatsink conditions and must be validated against actual board-level thermal resistance in the target application.
Does SIHG25N60EFL-GE3 support gate drive voltages below 10 V?
Yes, SIHG25N60EFL-GE3 specifies gate threshold voltage VGS(th) between 3.0 V and 5.0 V, enabling partial enhancement at 5 V logic-level drive. However, full RDS(on) performance (0.127 Ω) requires VGS = 10 V; operation at 5 V yields significantly higher on-resistance and increased conduction loss, limiting use to low-duty-cycle or low-current auxiliary functions.
Is SIHG25N60EFL-GE3 suitable for synchronous rectification?
No, SIHG25N60EFL-GE3 is not recommended for synchronous rectification due to its unidirectional channel design and lack of optimized reverse conduction characteristics. Its fast body diode is intended for freewheeling-not bidirectional current control-and it lacks the low VSD and symmetric SOA required for SR gate timing precision and reliability.
What is the thermal resistance from junction to case (RthJC) for SIHG25N60EFL-GE3?
The SIHG25N60EFL-GE3 has a maximum junction-to-case thermal resistance (RthJC) of 0.5 °C/W, measured from die junction to the drain tab surface. This value assumes proper mounting with thermal compound and flat heatsink contact; actual system-level RthJA will vary significantly based on PCB copper area, heatsink fin density, and airflow.
How does the avalanche rating of SIHG25N60EFL-GE3 impact circuit protection design?
The SIHG25N60EFL-GE3 is rated for 353 mJ single-pulse avalanche energy (EAS), allowing it to safely absorb inductive energy during fault conditions like short-circuit turn-off or transformer saturation without immediate failure. This enables simplified protection schemes in UPS and welding inverters-reducing or eliminating external RCD snubbers-but does not replace active overcurrent detection for repetitive stress.
SIHG25N60EFL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 146mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2274 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG25N60EFL-GE3 FAQ
1.How can I place an order for SIHG25N60EFL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG25N60EFL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG25N60EFL-GE3 reliable?
The price and inventory of SIHG25N60EFL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG25N60EFL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG25N60EFL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG25N60EFL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG25N60EFL-GE3?
SIHG25N60EFL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG25N60EFL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG25N60EFL-GE3?
For technical support, including SIHG25N60EFL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG25N60EFL-GE3 requirements.
6.How does Aetrix verify that SIHG25N60EFL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG25N60EFL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG25N60EFL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG25N60EFL-GE3?
All SIHG25N60EFL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG25N60EFL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG25N60EFL-GE3 part is unused and in its original packaging.
Return procedure for SIHG25N60EFL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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