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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG32N50D-E3

Name: SIHG32N50D-E3
Brand: Vishay Siliconix
SKU: SIHG32N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG32N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG32N50D-E3.pdf

Description:: MOSFET N-CH 500V 30A TO247AC

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Product details

Overview

SIHG32N50D-E3 from Vishay Siliconix is a 500 V, 32 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.150 Ω @ V_GS = 10 V, Q_g = 96 nC, and avalanche-rated (E_AS = 225 mJ). It serves as a high-voltage switching element in offline SMPS, motor drives, and induction heating circuits.

For engineers reviewing the SIHG32N50D-E3 datasheet, SIHG32N50D-E3 pinout, SIHG32N50D-E3 application, or SIHG32N50D-E3 equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 0.32 °C/W), body diode recovery (t_rr = 467 ns), gate charge profile, and real-world use context for high-reliability industrial power conversion.

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low C_iss (2550 pF) and minimized Q_gd/Q_g ratio (29/96 nC) reduce Miller-induced turn-off delay and improve switching controllability under high dV/dt conditions (24 V/ns at T_J = 125 °C).

The integrated body diode is rated for continuous 32 A source current and exhibits controlled reverse recovery (Q_rr = 7 μC, I_RRM = 28 A) with soft recovery characteristics-critical for reducing EMI in bridge-leg configurations and minimizing snubber losses in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % safety margin for transient overvoltage
R_DS(on) max	0.150 Ω @ V_GS = 10 V - enables <1.2 W conduction loss at 32 A, simplifying heatsink requirements
Q_g max	96 nC - determines gate drive power and influences minimum achievable switching frequency in hard-switched converters
E_AS	225 mJ - guarantees unclamped inductive switching robustness without external clamping in motor drive fault conditions
t_r/t_f	75/55 ns - enables >100 kHz operation in LLC and phase-shifted full-bridge topologies with low switching loss
R_thJC	0.32 °C/W - allows direct mounting to heatsink with minimal thermal interface resistance for 390 W dissipation capability
I_D cont @ T_C = 100 °C	19 A - defines usable current derating in compact enclosed power supplies operating at elevated ambient temperatures

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-lead layout, and thermally enhanced plastic body. Mounting hole ØP = 3.56–3.65 mm; case outline per JEDEC TO-247 variation AC.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring ≤10 V drive; 1.5 Ω gate input resistance limits ringing in high-dV/dt environments
2 (Drain)	Main power output	Connected to internal die drain; electrically tied to metal tab-must be insulated from heatsink unless referenced to system ground
3 (Source)	Power return / reference	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current
4 (Drain)	Main power output	Second drain connection for lower inductance path; used in parallel with Pin 2 to reduce source loop inductance in high-frequency layouts

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	14.4 Ω·nC - improves efficiency in both conduction and switching domains versus legacy 500 V MOSFETs
Avalanche energy rating	225 mJ single-pulse - eliminates need for external avalanche protection in UPS and welder primary switches
Body diode ruggedness	Rated for IS = 32 A continuous - supports synchronous rectification and bidirectional current flow in half-bridge motor control
Fast, soft reverse recovery	t_rr = 467 ns, Q_rr = 7 μC - reduces voltage overshoot and EMI during commutation in PFC and inverter stages
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on in high-noise industrial environments without gate clamping

Applications

Server SMPS Primary Switch	Industrial Induction Heater
Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main high-side switch handling 400 V DC input, conducting 32 A peak, switching at 100 kHz with zero-voltage transition assistance. Use Value: Low Q_g and fast t_r/t_f minimize dead-time losses; R_thJC = 0.32 °C/W enables compact heatsinking in 1U chassis.	Use Scenario: 15 kW resonant inverter driving copper coil for metal heating in forging lines. IC Role / Device Role / Timing Role: Half-bridge leg switch subjected to repetitive 500 V blocking and 30 A load current with high di/dt (>500 A/μs). Use Value: Avalanche rating ensures survival during short-circuit events; soft body diode recovery suppresses voltage spikes across resonant tank.
Welding Power Inverter	Battery Charger Output Stage
Use Scenario: IGBT-replacement in 200 A DC arc welder using full-bridge inverter with 20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switch in H-bridge delivering pulsed 200 A output; must sustain high reverse recovery stress during polarity reversal. Use Value: 128 A pulsed diode current rating and 28 A I_RRM prevent diode failure during rapid polarity switching cycles.	Use Scenario: 6 kW EV on-board charger with dual-phase interleaved PFC + LLC stage. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC transformer output, conducting 32 A average current at 300 kHz. Use Value: Low R_DS(on) reduces conduction loss below 1.2 W; low C_oss minimizes capacitive turn-on loss during ZVS transitions.

Server SMPS Primary Switch

Industrial Induction Heater

Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switch handling 400 V DC input, conducting 32 A peak, switching at 100 kHz with zero-voltage transition assistance.

Use Value: Low Q_g and fast t_r/t_f minimize dead-time losses; R_thJC = 0.32 °C/W enables compact heatsinking in 1U chassis.

Use Scenario: 15 kW resonant inverter driving copper coil for metal heating in forging lines.

IC Role / Device Role / Timing Role: Half-bridge leg switch subjected to repetitive 500 V blocking and 30 A load current with high di/dt (>500 A/μs).

Use Value: Avalanche rating ensures survival during short-circuit events; soft body diode recovery suppresses voltage spikes across resonant tank.

Welding Power Inverter

Battery Charger Output Stage

Use Scenario: IGBT-replacement in 200 A DC arc welder using full-bridge inverter with 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge delivering pulsed 200 A output; must sustain high reverse recovery stress during polarity reversal.

Use Value: 128 A pulsed diode current rating and 28 A I_RRM prevent diode failure during rapid polarity switching cycles.

Use Scenario: 6 kW EV on-board charger with dual-phase interleaved PFC + LLC stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC transformer output, conducting 32 A average current at 300 kHz.

Use Value: Low R_DS(on) reduces conduction loss below 1.2 W; low C_oss minimizes capacitive turn-on loss during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW32NM50FD	500 V, 32 A, R_DS(on) = 0.14 Ω, Q_g = 85 nC, TO-247FP package with insulated tab	Lower Q_g but no avalanche rating; requires external clamping in inductive loads	Prefer when gate drive power budget is tight and circuit includes active overvoltage protection
IXFH32N50P	500 V, 32 A, R_DS(on) = 0.155 Ω, Q_g = 105 nC, TO-247 package with non-isolated tab	Higher Q_g and slower t_r/t_f; rated for 150 °C junction but no specified E_AS	Acceptable where thermal margin exists and avalanche robustness is not required

Compared with STW32NM50FD and IXFH32N50P, SIHG32N50D-E3 uniquely combines certified avalanche energy (225 mJ), low Q_g-to-R_DS(on) ratio, and soft body diode recovery-making it preferred for unclamped inductive switching and high-reliability industrial inverters.

Availability

SIHG32N50D-E3 is available at Aetrix Electronics and suitable for server SMPS, industrial induction heating, and welding power inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for SIHG32N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The D Series Power MOSFETs-including SIHG32N50D-E3-are engineered for high-voltage hard-switching power conversion, targeting industrial motor drives, telecom rectifiers, and induction heating where avalanche capability and body diode ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHG32N50D-E3 at 100 °C case temperature?

The SIHG32N50D-E3 is rated for 19 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within its 390 W maximum power dissipation limit when properly heatsinked. The SIHG32N50D-E3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHG32N50D-E3 have an avalanche-rated specification, and what does it mean for circuit design?

Yes, SIHG32N50D-E3 is fully avalanche-rated with a single-pulse E_AS of 225 mJ (tested per JEDEC JESD24-1). This means the SIHG32N50D-E3 can safely absorb inductive energy during unclamped switching events-such as transformer leakage inductance snapback or motor winding interruption-without destructive failure. Designers may omit external clamping circuits in many industrial inverter and welder applications.

What is the gate threshold voltage range for SIHG32N50D-E3, and how does it affect drive compatibility?

The SIHG32N50D-E3 has a gate threshold voltage V_GS(th) of 3.0–5.0 V at T_J = 25 °C. This range confirms standard-level gate drive compatibility-requiring ≥10 V for full enhancement-and rules out logic-level operation. The SIHG32N50D-E3 is compatible with conventional 12–15 V gate drivers and does not require negative turn-off bias for noise immunity in noisy industrial settings.

How is the body diode performance of SIHG32N50D-E3 characterized, and why does it matter in bridge configurations?

The SIHG32N50D-E3 body diode is characterized by t_rr = 467 ns, Q_rr = 7 μC, and I_RRM = 28 A at T_J = 25 °C. Its soft recovery behavior minimizes voltage overshoot and EMI during commutation in half-bridge and full-bridge topologies. In applications like motor drives or resonant converters, this directly reduces snubber losses and improves system efficiency-key advantages confirmed in the SIHG32N50D-E3 datasheet's Fig. 7 and Fig. 15.

What thermal resistance values are specified for SIHG32N50D-E3, and how do they impact heatsink selection?

The SIHG32N50D-E3 specifies R_thJC = 0.32 °C/W (max) from junction to case and R_thJA = 40 °C/W (max) from junction to ambient. Since R_thJC dominates thermal path performance, heatsink design must prioritize low thermal interface resistance between the TO-247AC metal tab and heatsink surface. For 390 W dissipation, a heatsink with ≤0.5 °C/W total resistance (including interface) is required to maintain T_J ≤ 150 °C-verified using the SIHG32N50D-E3's thermal transient impedance curve (Fig. 11).

SIHG32N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG32N50D-E3 FAQ

1.How can I place an order for SIHG32N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG32N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG32N50D-E3 reliable?

The price and inventory of SIHG32N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG32N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHG32N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG32N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG32N50D-E3?

SIHG32N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG32N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG32N50D-E3?

For technical support, including SIHG32N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG32N50D-E3 requirements.

6.How does Aetrix verify that SIHG32N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG32N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG32N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHG32N50D-E3?

All SIHG32N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG32N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG32N50D-E3 part is unused and in its original packaging.

Return procedure for SIHG32N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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