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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG33N65E-GE3

Name: SIHG33N65E-GE3
Brand: Vishay Siliconix
SKU: SIHG33N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG33N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG33N65E-GE3.pdf

Description:: MOSFET N-CH 650V 32.4A TO247AC

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Product details

Overview

SIHG33N65E-GE3 from Vishay Siliconix is a 650 V, 32.4 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.090 Ω at V_GS = 10 V, Q_g = 115 nC (typ), and avalanche-rated (E_AS = 596 mJ). It delivers low conduction and switching losses for high-efficiency server and telecom SMPS designs.

For engineers reviewing the SIHG33N65E-GE3 datasheet, SIHG33N65E-GE3 pinout, SIHG33N65E-GE3 application, or SIHG33N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, 0.090 Ω R_DS(on), 115 nC gate charge, TO-247AC thermal performance (R_thJC = 0.4 °C/W), and UIS-rated ruggedness - all critical for PFC and high-voltage DC-DC stages.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for hard-switched and resonant topologies. Its low C_iss (4040 pF) and ultra-low Q_gd/Q_g ratio (49/115 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 70 V/ns.

The integrated body diode exhibits t_rr = 605 ns and Q_rr = 11 μC at T_J = 25 °C, supporting moderate-frequency synchronous rectification and ZVS transitions. Thermal design leverages the TO-247AC package's low junction-to-case resistance (0.4 °C/W) for direct heatsink mounting in industrial and solar inverter applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus with 1.6× safety margin in PFC and PV inverter DC-link switching
R_DS(on) max	0.105 Ω - ensures ≤ 11.3 W conduction loss at 16.5 A continuous drain current
Q_g max	173 nC - defines gate drive power requirement and influences switching speed in 100–300 kHz SMPS
E_AS	596 mJ - enables robust unclamped inductive switching without external snubbers in motor drives
R_thJC	0.4 °C/W - allows ≥ 250 W power dissipation with 100 °C case temperature rise, suitable for forced-air heatsinks
t_rr	605 ns - limits reverse recovery stress during commutation in bridge-leg configurations
I_D @ T_C = 100 °C	21 A - defines usable current derating in compact, thermally constrained telecom PSU modules

Pinout & Package

TO-247AC package with isolated drain tab (pins 2 and 4 both connected to drain), standard 3-pin layout optimized for high-current, high-voltage PCB layouts and mechanical heatsinking. Thermal pad on drain side enables direct thermal interface to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Low-impedance gate terminal requiring <1.0 Ω series resistance to suppress oscillation; accepts ±30 V rating
2 (Drain)	High-side power node	Electrically tied to metal tab; primary heat path and high-voltage switching node (650 V rated)
3 (Source)	Power return / reference	Common source node for gate drive return and current sensing; referenced to system ground in low-side switch
4 (Drain)	Redundant drain connection	Second drain lead for enhanced current sharing and reduced package inductance in high-di/dt applications

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	9.7 Ω·nC - improves trade-off between conduction loss and switching loss in 100–200 kHz PFC stages
Avalanche energy rating (UIS)	596 mJ - eliminates need for external clamping in inductive load switching and fault transients
Ultra-low Q_gd	49 nC - minimizes Miller plateau duration and enhances immunity to false turn-on in high-dV/dt environments
Low C_iss	4040 pF - reduces gate drive current demand and EMI generation in fast-switching topologies
Body diode t_rr	605 ns - enables reliable operation in quasi-resonant converters without external diode replacement

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW front-end AC-DC converter with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET in boost PFC switch position, operating at 70–100 kHz with 650 V blocking. Use Value: 0.090 Ω R_DS(on) and 115 nC Q_g enable >96% efficiency at full load while maintaining thermal margin on 1U heatsink.	Use Scenario: Output rectification and isolation in 48 V/50 A telecom rectifier module using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, leveraging low Q_rr and fast t_rr for ZVS-assisted turn-on. Use Value: 605 ns t_rr and 11 μC Q_rr minimize voltage overshoot and ringing during commutation, reducing snubber losses by ~18%.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in 5–10 kW string inverter H-bridge stage interfacing 1000 V DC PV array. IC Role / Device Role / Timing Role: 650 V high-side switch in three-phase inverter leg, subjected to repetitive UIS events during grid faults. Use Value: 596 mJ E_AS rating ensures single-pulse survivability under 100 A inductive fault currents without derating.	Use Scenario: Inverter output stage in 7.5 kW variable-frequency drive powering HVAC compressors. IC Role / Device Role / Timing Role: Low-loss switching device in IGBT gate-drive compatible half-bridge configuration, operating at 8–16 kHz. Use Value: 0.4 °C/W R_thJC enables direct-mount heatsinking to aluminum chassis, reducing thermal interface layers and improving long-term reliability.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW front-end AC-DC converter with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET in boost PFC switch position, operating at 70–100 kHz with 650 V blocking.

Use Value: 0.090 Ω R_DS(on) and 115 nC Q_g enable >96% efficiency at full load while maintaining thermal margin on 1U heatsink.

Use Scenario: Output rectification and isolation in 48 V/50 A telecom rectifier module using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET, leveraging low Q_rr and fast t_rr for ZVS-assisted turn-on.

Use Value: 605 ns t_rr and 11 μC Q_rr minimize voltage overshoot and ringing during commutation, reducing snubber losses by ~18%.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in 5–10 kW string inverter H-bridge stage interfacing 1000 V DC PV array.

IC Role / Device Role / Timing Role: 650 V high-side switch in three-phase inverter leg, subjected to repetitive UIS events during grid faults.

Use Value: 596 mJ E_AS rating ensures single-pulse survivability under 100 A inductive fault currents without derating.

Use Scenario: Inverter output stage in 7.5 kW variable-frequency drive powering HVAC compressors.

IC Role / Device Role / Timing Role: Low-loss switching device in IGBT gate-drive compatible half-bridge configuration, operating at 8–16 kHz.

Use Value: 0.4 °C/W R_thJC enables direct-mount heatsinking to aluminum chassis, reducing thermal interface layers and improving long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33N65M5	650 V, 33 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, TO-247 long leads	Lower R_DS(on) but higher Q_g; slightly better conduction loss, marginally slower switching	Prefer when conduction loss dominates (e.g., high-duty-cycle PFC); verify gate drive capability for 120 nC load
IXFH32N65X2	650 V, 32 A, R_DS(on) = 0.095 Ω, Q_g = 95 nC, TO-247 non-isolated drain	Lower Q_g improves switching efficiency but higher R_DS(on) increases conduction loss; no isolated drain tab	Prefer in space-constrained layouts where lower gate drive loss is critical and thermal interface allows non-isolated mounting

Compared with STW33N65M5 and IXFH32N65X2, SIHG33N65E-GE3 offers the best balance of low R_DS(on) (0.090 Ω), moderate Q_g (115 nC), and fully isolated drain tab - making it optimal for thermally demanding, safety-critical PFC and inverter applications requiring creepage clearance and direct heatsink attachment.

Availability

SIHG33N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for SIHG33N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series power MOSFETs, including SIHG33N65E-GE3, were engineered for high-efficiency, high-voltage switching in server, telecom, and renewable energy systems - emphasizing ruggedness, low FOM, and thermal performance in TO-247 packages.

FAQ

What is the maximum continuous drain current rating for SIHG33N65E-GE3 at 100 °C case temperature?

The SIHG33N65E-GE3 supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied in conjunction with R_thJC = 0.4 °C/W to ensure junction temperature remains ≤150 °C under actual operating conditions. The SIHG33N65E-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)".

Does SIHG33N65E-GE3 have an avalanche-rated specification, and what does it mean for circuit design?

Yes, SIHG33N65E-GE3 is rated for single-pulse avalanche energy (E_AS) of 596 mJ, tested per JEDEC JESD24-1. This means the SIHG33N65E-GE3 can safely absorb inductive energy during unclamped inductive switching events - such as transformer leakage spikes or motor freewheeling - without failure. Designers may omit external clamping circuits in many industrial and solar applications, simplifying layout and improving reliability.

What is the gate threshold voltage range for SIHG33N65E-GE3, and how does it affect drive circuit compatibility?

The SIHG33N65E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C. This standard logic-level compatible range ensures reliable turn-on with 10 V gate drive while avoiding unintended conduction from noise or leakage. The SIHG33N65E-GE3 requires ≥10 V for full enhancement (R_DS(on) = 0.090 Ω), and its ±30 V V_GS rating supports robust gate protection against transient coupling.

How does the body diode performance of SIHG33N65E-GE3 compare to standard FRDs in high-frequency rectification?

The SIHG33N65E-GE3 body diode exhibits t_rr = 605 ns and Q_rr = 11 μC at T_J = 25 °C, which is slower than dedicated fast recovery diodes but sufficient for soft-switching topologies like LLC or phase-shifted full-bridge. In such cases, the SIHG33N65E-GE3 body diode enables synchronous rectification without external diodes, reducing component count and forward drop - though discrete FRDs remain preferred for hard-switched 100+ kHz rectification.

Is SIHG33N65E-GE3 RoHS-compliant and halogen-free, and where is this confirmed?

Yes, SIHG33N65E-GE3 is lead (Pb)-free and halogen-free, as explicitly stated in the Ordering Information section of the Vishay datasheet (Document Number: 91716). The "-GE3" suffix denotes Vishay's Green Electronics packaging standard, compliant with EU RoHS Directive 2011/65/EU and JEDEC JS709A for halogen content. This makes the SIHG33N65E-GE3 suitable for environmentally regulated industrial and telecom equipment.

SIHG33N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 105mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 173 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4040 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG33N65E-GE3 FAQ

1.How can I place an order for SIHG33N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG33N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG33N65E-GE3 reliable?

The price and inventory of SIHG33N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG33N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG33N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG33N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG33N65E-GE3?

SIHG33N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG33N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG33N65E-GE3?

For technical support, including SIHG33N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG33N65E-GE3 requirements.

6.How does Aetrix verify that SIHG33N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG33N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG33N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG33N65E-GE3?

All SIHG33N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG33N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG33N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHG33N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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