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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG47N60AEF-GE3

Name: SIHG47N60AEF-GE3
Brand: Vishay Siliconix
SKU: SIHG47N60AEF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG47N60AEF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG47N60AEF-GE3.pdf

Description:: MOSFET N-CH 600V 40A TO247AC

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Product details

Overview

SIHG47N60AEF-GE3 from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.061 Ω (typ. at V_GS = 10 V), Q_g = 126 nC (typ.), and avalanche-rated (E_AS = 508 mJ). It serves as a high-efficiency primary-side switching device in hard-switched and resonant topologies for telecom and server power supplies.

For engineers reviewing the SIHG47N60AEF-GE3 datasheet, SIHG47N60AEF-GE3 pinout, SIHG47N60AEF-GE3 application, or SIHG47N60AEF-GE3 equivalent, key selection criteria include its fast body diode (t_rr = 160 ns typ., Q_rr = 1.2 μC), low C_iss (3576 pF), and robust 600 V V_DS rating with ±30 V gate tolerance - critical for PFC and LLC half-bridge designs requiring reliable unclamped inductive switching.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage, medium-current SMPS applications. Its gate charge profile (Q_gs = 26 nC, Q_gd = 55 nC) supports precise Miller plateau control, while the integral fast-recovery body diode enables synchronous rectification-capable operation without external diode supplementation in certain flyback or active clamp configurations.

The device is characterized for operation up to T_J = 150 °C with linear derating (2.5 W/°C above 25 °C case temperature) and exhibits stable V_DS temperature coefficient (+0.72 V/°C), ensuring predictable breakdown voltage drift across thermal transients in industrial-grade power converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Withstands DC bus voltages up to 480 V in 400 V nominal PFC stages with margin for surge and ringing.
R_DS(on) typ.	0.061 Ω at V_GS = 10 V, I_D = 23.5 A - Enables <1.5 W conduction loss at 25 A, reducing heatsink requirements in 1–3 kW systems.
Q_g max	189 nC - Defines minimum gate drive energy; requires ≥2 A peak driver capability for <100 ns switching transitions.
E_AS	508 mJ (single-pulse, 25 °C) - Supports robust operation under unclamped inductive switching (UIS) without failure in motor drive or welder snubber circuits.
t_rr / Q_rr	160 ns / 1.2 μC (T_J = 25 °C) - Limits reverse recovery losses and EMI generation during hard commutation of inductive loads.
C_iss	3576 pF at V_DS = 100 V - Low input capacitance reduces gate drive power and improves high-frequency efficiency in >100 kHz SMPS designs.
P_D max	313 W at T_C = 25 °C - Requires thermal interface resistance ≤0.4 °C/W to maintain T_J < 150 °C under full load.

Pinout & Package

SIHG47N60AEF-GE3 uses the industry-standard TO-247AC package (JEDEC outline), featuring isolated drain tab for direct heatsinking, lead-free/halogen-free finish (GE3 suffix), and 3-pin configuration with drain connected to both pins 2 and 4 per Vishay's official lead assignment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts 0–10 V logic-level gate drive; ±30 V absolute max rating prevents ESD-induced damage during handling or layout.
2 (Drain)	Main current path anode	Electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits common-drain topology.
3 (Source)	Reference node & return path	Serves as local ground reference for gate drive; low-inductance PCB routing essential to minimize V_GS noise during fast dV/dt switching.
4 (Drain)	Secondary drain connection	Redundant drain pin improves current sharing and thermal spreading; electrically identical to pin 2 and tab.

Key Features

Feature	Design Value
Fast body diode	t_rr = 160 ns (typ.) and Q_rr = 1.2 μC enable reduced turn-off loss and lower EMI in discontinuous conduction mode (DCM) flyback and active clamp forward converters.
Low Q_g/R_DS(on) FOM	Q_g × R_DS(on) ≈ 11.5 nC·Ω - Optimized trade-off between switching speed and conduction loss for 60–100 kHz PFC and main switch applications.
Avalanche energy rated	E_AS = 508 mJ ensures single-pulse ruggedness under worst-case UIS events (e.g., transformer saturation, short-circuit startup), eliminating need for external clamping in many industrial designs.
Ultra-low C_iss	3576 pF minimizes Miller feedback and gate drive power consumption, supporting efficient operation with standard 1–2 A gate drivers (e.g., UCC27531, IRS2004).
High dv/dt immunity	Rated for 100 V/ns (T_J = 125 °C) - Resists false turn-on in high-speed half-bridge layouts with tight gate loop area and proper source referencing.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW, 12 V output, dual-active-bridge (DAB) isolated DC-DC converter for AI server racks. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology operating at 200 kHz with ZVS-assisted turn-on. Use Value: Low Q_gd/Q_g ratio (55/126 nC) enables precise zero-voltage switching timing control, reducing turn-on loss by >35% vs. legacy 650 V MOSFETs.	Use Scenario: Boost PFC stage in 48 V telecom rectifier delivering 2.5 kW with >96% efficiency at full load. IC Role / Device Role / Timing Role: Fast-switching boost switch handling 25 A RMS input current at 100 kHz switching frequency. Use Value: 0.061 Ω R_DS(on) and 1.2 μC Q_rr jointly reduce total power loss to <28 W, enabling natural convection cooling in space-constrained 1U chassis.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in 5 kW string inverter with three-level NPC topology feeding grid-tied AC output. IC Role / Device Role / Timing Role: Upper-leg switch in NPC leg, subjected to 400 V DC-link with bidirectional current flow during reactive power control. Use Value: Avalanche rating (508 mJ) and fast body diode allow safe commutation during shoot-through fault recovery and reactive current reversal without external freewheeling diodes.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive operating at 8 kHz PWM with field-oriented control (FOC). IC Role / Device Role / Timing Role: Low-side switching element conducting 30 A RMS with repetitive 100 A peak current pulses. Use Value: TO-247AC package with dual drain pins provides 0.4 °C/W R_thJC, maintaining junction temperature below 135 °C even at 75 °C ambient with minimal heatsink mass.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW, 12 V output, dual-active-bridge (DAB) isolated DC-DC converter for AI server racks.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology operating at 200 kHz with ZVS-assisted turn-on.

Use Value: Low Q_gd/Q_g ratio (55/126 nC) enables precise zero-voltage switching timing control, reducing turn-on loss by >35% vs. legacy 650 V MOSFETs.

Use Scenario: Boost PFC stage in 48 V telecom rectifier delivering 2.5 kW with >96% efficiency at full load.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 25 A RMS input current at 100 kHz switching frequency.

Use Value: 0.061 Ω R_DS(on) and 1.2 μC Q_rr jointly reduce total power loss to <28 W, enabling natural convection cooling in space-constrained 1U chassis.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in 5 kW string inverter with three-level NPC topology feeding grid-tied AC output.

IC Role / Device Role / Timing Role: Upper-leg switch in NPC leg, subjected to 400 V DC-link with bidirectional current flow during reactive power control.

Use Value: Avalanche rating (508 mJ) and fast body diode allow safe commutation during shoot-through fault recovery and reactive current reversal without external freewheeling diodes.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive operating at 8 kHz PWM with field-oriented control (FOC).

IC Role / Device Role / Timing Role: Low-side switching element conducting 30 A RMS with repetitive 100 A peak current pulses.

Use Value: TO-247AC package with dual drain pins provides 0.4 °C/W R_thJC, maintaining junction temperature below 135 °C even at 75 °C ambient with minimal heatsink mass.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.065 Ω (typ.), Q_g = 134 nC, t_rr = 220 ns - higher Q_rr and slower diode recovery.	Less suitable for high-frequency DCM flyback due to elevated reverse recovery loss.	Prefer SIHG47N60AEF-GE3 where diode softness and low Q_rr are critical for EMI-sensitive lighting or telecom systems.
IXFH44N60P	R_DS(on) = 0.075 Ω (typ.), Q_g = 150 nC, no specified E_AS rating - higher conduction loss and untested avalanche ruggedness.	Not recommended for unclamped inductive loads like welding or induction heating without external protection.	Choose SIHG47N60AEF-GE3 when system-level reliability under transient overloads is mandatory.

Compared with STW48N60M2 and IXFH44N60P, SIHG47N60AEF-GE3 delivers superior switching efficiency via lower Q_g and faster body diode, while its certified 508 mJ E_AS provides verified ruggedness absent in the alternatives - making it optimal for mission-critical 600 V SMPS where thermal margin and fault tolerance are design priorities.

Availability

SIHG47N60AEF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SIHG47N60AEF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The EF Series, including SIHG47N60AEF-GE3, was engineered specifically for high-voltage, medium-power switching applications demanding low gate charge, fast body diode recovery, and avalanche energy capability - targeting next-generation server, telecom, and renewable energy power conversion.

FAQ

What is the maximum continuous drain current rating for SIHG47N60AEF-GE3 at 100 °C case temperature?

The SIHG47N60AEF-GE3 has a continuous drain current rating of 25 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-247AC package and must be applied in thermal design calculations to ensure junction temperature remains within the -55 °C to +150 °C operating range. The SIHG47N60AEF-GE3 datasheet confirms this limit is valid for steady-state conduction with proper heatsinking.

Does SIHG47N60AEF-GE3 have a fully characterized body diode suitable for synchronous rectification?

The SIHG47N60AEF-GE3 features a fast, fully characterized body diode with t_rr = 160 ns (typ.), Q_rr = 1.2 μC, and V_SD = 1.2 V (at I_S = 23.5 A, T_J = 25 °C). While not optimized for synchronous rectification like dedicated SR MOSFETs, its parameters support limited use in low-duty-cycle freewheeling paths in flyback or LLC converters. However, the SIHG47N60AEF-GE3 is primarily intended as a primary-side switch, not a dedicated SR device.

Is SIHG47N60AEF-GE3 RoHS-compliant and halogen-free?

Yes, SIHG47N60AEF-GE3 is lead (Pb)-free and halogen-free, as confirmed by the ordering information section stating "Lead (Pb)-free and halogen-free" and the GE3 suffix per Vishay's packaging nomenclature. Compliance with RoHS Directive 2011/65/EU and JEDEC JS709C is documented in Vishay's material declarations, and the SIHG47N60AEF-GE3 meets all applicable environmental requirements for industrial and telecom equipment.

What is the gate threshold voltage range for SIHG47N60AEF-GE3, and how does it affect drive circuit design?

The SIHG47N60AEF-GE3 has a gate-source threshold voltage V_GS(th) ranging from 2 V to 4 V (min to max) at I_D = 250 μA. This relatively wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variations. Driving the SIHG47N60AEF-GE3 with only 5 V risks incomplete turn-on and excessive R_DS(on), so 10–15 V gate drive is strongly recommended per the SIHG47N60AEF-GE3 datasheet specifications.

Can SIHG47N60AEF-GE3 be used in avalanche mode for circuit protection?

Yes, SIHG47N60AEF-GE3 is explicitly rated for single-pulse avalanche energy (E_AS) of 508 mJ under defined test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 6.0 A). This rating validates its ability to absorb inductive energy safely during transient overloads. However, the SIHG47N60AEF-GE3 is not intended for repetitive avalanche operation, and system design must ensure avalanche events remain infrequent and within the specified single-pulse limits.

SIHG47N60AEF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 23.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 189 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3576 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG47N60AEF-GE3 FAQ

1.How can I place an order for SIHG47N60AEF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG47N60AEF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG47N60AEF-GE3 reliable?

The price and inventory of SIHG47N60AEF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG47N60AEF-GE3 is usually 5 days.

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SIHG47N60AEF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG47N60AEF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG47N60AEF-GE3?

For technical support, including SIHG47N60AEF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG47N60AEF-GE3 requirements.

6.How does Aetrix verify that SIHG47N60AEF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG47N60AEF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG47N60AEF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG47N60AEF-GE3?

All SIHG47N60AEF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG47N60AEF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG47N60AEF-GE3 part is unused and in its original packaging.

Return procedure for SIHG47N60AEF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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