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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG80N60E-GE3

Name: SIHG80N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG80N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG80N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG80N60E-GE3.pdf

Description:: MOSFET N-CH 600V 80A TO247AC

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Product details

Overview

SIHG80N60E-GE3 from Vishay Siliconix is a 600 V, 80 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.026 Ω (typ. at V_GS = 10 V), Q_g = 295 nC (typ.), and 1142 mJ single-pulse avalanche energy. It serves as a high-efficiency primary-side switching device in high-power SMPS and PFC stages.

For engineers reviewing the SIHG80N60E-GE3 datasheet, SIHG80N60E-GE3 pinout, SIHG80N60E-GE3 application, or SIHG80N60E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 0.24 °C/W), body diode recovery characteristics (t_rr = 746 ns typ.), and real-world use context for server power, solar inverters, and industrial motor drives.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (6900 pF typ.) and ultra-low Q_gd/Q_g ratio (139/295 nC) reduce Miller-induced turn-off delay and improve gate drive efficiency under high dv/dt conditions (70 V/ns max).

The integrated body diode is rated for 80 A continuous source-drain current and exhibits controlled reverse recovery (Q_rr = 16 μC typ., I_RRM = 33 A) - critical for ZVS-capable topologies and freewheeling in bridge configurations where diode conduction occurs during dead time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient spikes in telecom/server PSUs
R_DS(on) typ.	0.026 Ω at V_GS = 10 V - enables <1.0 W conduction loss at 40 A, reducing heatsink requirements
Q_g typ.	295 nC - lowers gate driver power demand and allows use of cost-effective 1-A peak drivers
E_AS	1142 mJ - ensures robustness against unclamped inductive switching events in motor drive and welding circuits
R_thJC	0.24 °C/W - permits >400 W dissipation with ≤100 °C case-to-junction rise, supporting high-power density layouts
t_rr	746 ns typ. - minimizes diode switching loss and EMI generation during commutation in half-bridge PFC
I_D cont. @ T_C=100°C	51 A - defines usable current limit in thermally constrained enclosures without forced air

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin through-hole mounting, and 0.24 °C/W junction-to-case thermal resistance. Thermal pad contour optional per JEDEC TO-247 AC variant.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control input requiring <100 nA leakage; driven by dedicated gate driver IC or transformer-coupled circuit
2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab - must be insulated from heatsink unless referenced to system ground
3 (Lead)	Source	Power return path and gate reference node; carries full load current and must be routed with low-inductance layout to minimize ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	7.67 Ω·nC - directly improves figure-of-merit for high-frequency switching efficiency in 100–300 kHz PFC stages
Avalanche-rated (UIS)	1142 mJ single-pulse rating - eliminates need for external snubbers in inductive load switching applications
Ultra-low Q_gd	139 nC - suppresses Miller plateau duration, enabling faster, more predictable turn-off in hard-switched converters
Low C_iss	6900 pF - reduces gate drive power loss and improves EMI profile compared to legacy 600 V MOSFETs
Body diode t_rr spec	746 ns typ. - enables reliable operation in synchronous rectification and bidirectional topologies without external diode

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 3.5 kW LLC resonant converter for AI server rack power distribution. IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with zero-voltage switching; handles 80 A peak drain current during transients. Use Value: Low Q_g and R_DS(on) reduce total switching + conduction losses to <2.1 W, enabling 96.8 % efficiency at full load.	Use Scenario: DC-link switching device in 15 kW string inverter H-bridge stage interfacing PV array to grid. IC Role / Device Role / Timing Role: Hard-switched 600 V bridge leg transistor; conducts 65 A RMS with 100 ns dv/dt stress during PWM transitions. Use Value: Avalanche rating and controlled body diode recovery prevent destructive failure during grid fault re-synchronization events.
Industrial Motor Drive	Induction Heating System
Use Scenario: Inverter output stage in 22 kW variable frequency drive controlling 3-phase induction motor in HVAC compressor. IC Role / Device Role / Timing Role: Low-side switch in 3-phase IGBT/MOSFET hybrid inverter; operates at 8 kHz with 51 A continuous current at 100 °C case temperature. Use Value: R_thJC = 0.24 °C/W allows direct mounting to shared heatsink without derating, cutting thermal BOM cost by 30 %.	Use Scenario: Half-bridge switch in 10 kW resonant tank for domestic induction cooktop operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch handling repetitive 268 A pulsed drain current during burst-mode operation. Use Value: Low C_oss and high dv/dt immunity (70 V/ns) suppress parasitic turn-on and ensure stable zero-current switching across full power range.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 3.5 kW LLC resonant converter for AI server rack power distribution.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with zero-voltage switching; handles 80 A peak drain current during transients.

Use Value: Low Q_g and R_DS(on) reduce total switching + conduction losses to <2.1 W, enabling 96.8 % efficiency at full load.

Use Scenario: DC-link switching device in 15 kW string inverter H-bridge stage interfacing PV array to grid.

IC Role / Device Role / Timing Role: Hard-switched 600 V bridge leg transistor; conducts 65 A RMS with 100 ns dv/dt stress during PWM transitions.

Use Value: Avalanche rating and controlled body diode recovery prevent destructive failure during grid fault re-synchronization events.

Industrial Motor Drive

Induction Heating System

Use Scenario: Inverter output stage in 22 kW variable frequency drive controlling 3-phase induction motor in HVAC compressor.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase IGBT/MOSFET hybrid inverter; operates at 8 kHz with 51 A continuous current at 100 °C case temperature.

Use Value: R_thJC = 0.24 °C/W allows direct mounting to shared heatsink without derating, cutting thermal BOM cost by 30 %.

Use Scenario: Half-bridge switch in 10 kW resonant tank for domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power switch handling repetitive 268 A pulsed drain current during burst-mode operation.

Use Value: Low C_oss and high dv/dt immunity (70 V/ns) suppress parasitic turn-on and ensure stable zero-current switching across full power range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW80N60DM6	600 V, 80 A, R_DS(on) = 0.028 Ω, Q_g = 320 nC, D²PAK package	Higher thermal resistance (R_thJC = 0.45 °C/W); requires larger heatsink footprint	Preferred where board space is constrained but thermal budget allows SMD mounting
IXFH80N60X3	600 V, 80 A, R_DS(on) = 0.024 Ω, Q_g = 220 nC, TO-247 package, no UIS rating	Lacks avalanche energy specification; unsuitable for unclamped inductive loads	Selected when gate drive efficiency is prioritized over ruggedness in tightly regulated ZVS designs

Compared with STW80N60DM6 and IXFH80N60X3, SIHG80N60E-GE3 offers superior avalanche ruggedness and lower thermal resistance in TO-247AC, making it optimal for high-reliability industrial and renewable energy systems where transient immunity and thermal headroom are critical.

Availability

SIHG80N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for SIHG80N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs, including SIHG80N60E-GE3, were engineered for high-efficiency, high-reliability switching in 400–800 V DC bus systems - targeting telecom rectifiers, industrial SMPS, and renewable energy conversion where low conduction loss and avalanche survivability are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHG80N60E-GE3 at 100 °C case temperature?

The SIHG80N60E-GE3 is rated for 51 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be used with appropriate heatsinking to maintain T_J ≤ 150 °C. The SIHG80N60E-GE3 datasheet confirms this limit applies under steady-state conduction with V_GS = 10 V.

Does SIHG80N60E-GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHG80N60E-GE3 is rated for 1142 mJ single-pulse unclamped inductive switching (UIS) energy, tested per JEDEC standard with V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 9 A starting at T_J = 25 °C. This rating validates ruggedness against inductive kickback in motor drives and welding equipment. The SIHG80N60E-GE3 datasheet explicitly lists E_AS in the Absolute Maximum Ratings section.

What is the typical gate charge (Qg) of SIHG80N60E-GE3, and why does it matter for gate driver selection?

The SIHG80N60E-GE3 has a typical total gate charge (Q_g) of 295 nC at V_GS = 10 V, with Q_gs = 85 nC and Q_gd = 139 nC. This value determines required gate driver peak current: for 100 ns turn-on, ~3 A peak is needed. Lower Q_g reduces driver power loss and simplifies gate loop design. The SIHG80N60E-GE3 datasheet specifies Q_g in the Dynamic Characteristics table.

How does the body diode performance of SIHG80N60E-GE3 compare to standard fast recovery diodes?

The SIHG80N60E-GE3 body diode has t_rr = 746 ns (typ.), Q_rr = 16 μC (typ.), and V_SD = 1.2 V (typ. at 40 A), making it suitable for moderate-frequency freewheeling but not optimized for ultra-fast synchronous rectification. Unlike discrete fast diodes, its recovery is process-tuned for balance between softness and speed - critical in PFC boost diodes. These values are confirmed in the Drain-Source Body Diode Characteristics section of the SIHG80N60E-GE3 datasheet.

Is SIHG80N60E-GE3 lead (Pb)-free and halogen-free, and what does the "-GE3" suffix indicate?

Yes, SIHG80N60E-GE3 is lead-free and halogen-free per Vishay's material compliance standards. The "-GE3" suffix denotes RoHS-compliant, green (halogen-free) packaging with matte tin plating on leads and TO-247AC package construction. This marking is defined in the Ordering Information section of the SIHG80N60E-GE3 datasheet and aligns with Vishay document 99912.

SIHG80N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 443 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG80N60E-GE3 FAQ

1.How can I place an order for SIHG80N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG80N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG80N60E-GE3 reliable?

The price and inventory of SIHG80N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG80N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG80N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG80N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG80N60E-GE3?

SIHG80N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG80N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG80N60E-GE3?

For technical support, including SIHG80N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG80N60E-GE3 requirements.

6.How does Aetrix verify that SIHG80N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG80N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG80N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG80N60E-GE3?

All SIHG80N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG80N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG80N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG80N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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