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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH085N60EF-T1GE3

Name: SIHH085N60EF-T1GE3
Brand: Vishay Siliconix
SKU: SIHH085N60EF-T1GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH085N60EF-T1GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH085N60EF-T1GE3.pdf

Description:: EF SERIES POWER MOSFET WITH FAST

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Product details

Overview

SIHH085N60EF-T1GE3 from Vishay Siliconix is a 600 V, 30 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency SMPS and PFC stages. It features R_DS(on) = 0.075 Ω (typ, V_GS = 10 V), Q_g = 42 nC (typ), and fast body diode (t_rr = 109 ns, Q_rr = 0.6 μC) enabling reduced switching losses in hard-switched and ZVS topologies.

For engineers reviewing the SIHH085N60EF-T1GE3 datasheet, SIHH085N60EF-T1GE3 pinout, SIHH085N60EF-T1GE3 application, or SIHH085N60EF-T1GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), avalanche-rated UIS capability (E_AS = 173 mJ), Kelvin source for gate drive stability, and thermal resistance R_thJC = 0.51 °C/W - critical for high-power density server PSU and solar inverter designs.

Technical Context

This EF-series MOSFET employs Vishay's 4th-generation E-series silicon technology with optimized cell layout to minimize both conduction loss (via low R_DS(on)) and switching loss (via low C_oss(er) = 107 pF and Q_gd/Q_g ratio of ~21%). Its Kelvin source configuration isolates power and signal return paths, reducing gate loop inductance and improving dV/dt immunity during fast switching.

The device is rated for repetitive operation up to T_J = 150 °C, supports unclamped inductive switching (UIS), and exhibits stable V_GS(th) (3.0–5.0 V) and low IDSS (<1 μA at 480 V, 25 °C). Its dv/dt rating of 100 V/ns (T_J = 125 °C) and reverse diode dv/dt of 50 V/ns support robust operation in noisy high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 V margin for voltage spikes in telecom/server PSUs.
R_DS(on) typ @ 10 V	0.075 Ω - enables <1.3 W conduction loss at 17 A, critical for thermally constrained PFC boost stages.
Q_g typ	42 nC - reduces gate drive power and allows use of lower-cost drivers in 100–300 kHz SMPS.
t_rr / Q_rr	109 ns / 0.6 μC - minimizes diode recovery loss and EMI in bridge-leg commutation.
R_thJC max	0.68 °C/W - supports >150 W continuous power dissipation with standard heatsinking in PowerPAK 8×8 footprint.
E_AS	173 mJ - ensures ruggedness against transient overloads in motor drives and welding inverters without external snubbers.
dv/dt rating	100 V/ns - sustains reliable operation under fast voltage transients in high-speed half-bridge configurations.

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm, 1.0 mm height), surface-mount, lead (Pb)-free and halogen-free, with exposed drain pad on bottom for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input terminal; connects to driver IC output; requires low-inductance routing due to high di/dt sensitivity.
Pin 2	Kelvin Source	Dedicated low-current source reference for gate driver feedback; isolates power source path to suppress gate oscillation.
Pin 3	Source (Power)	Main current return path for load current; tied to PCB power ground plane with wide copper pour.
Pin 4	Drain	High-side switch node; electrically connected to exposed bottom pad; must be routed with minimum loop area to reduce EMI.

Key Features

Feature	Design Value
4th-gen E-series silicon	Delivers 22% lower R_DS(on) × Q_g FOM vs. prior generation, directly improving efficiency in 100–200 kHz PFC circuits.
Kelvin source configuration	Eliminates source inductance impact on gate control, enabling stable switching at >150 V/ns dV/dt without false turn-on.
Fast body diode (t_rr = 109 ns)	Reduces reverse recovery energy by >40% vs. standard superjunction MOSFETs, lowering heat in synchronous rectifier and LLC resonant applications.
Avalanche-rated (E_AS = 173 mJ)	Allows operation in inductive switching environments (e.g., motor drives) without external clamping components.
Low C_oss(er) = 107 pF	Minimizes capacitive turn-off loss and improves light-load efficiency in ZVS topologies like phase-shifted full-bridge.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW, 96% efficient 48 V output server PSU using interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switching element in boost PFC stage operating at 120 kHz with 400 V DC link. Use Value: Kelvin source and low Q_gd enable clean gate waveforms and <0.5% efficiency gain over non-Kelvin alternatives at full load.	Use Scenario: Output rectification and isolation switch in 48 V/50 A telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side full-bridge, driven with adaptive timing control. Use Value: Fast t_rr and low V_SD (1.2 V) reduce conduction and recovery losses, improving system efficiency by 0.8% at 50% load.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in 5 kW string inverter DC/AC stage using three-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switching device handling 600 V DC bus with bidirectional current flow during modulation. Use Value: Avalanche rating and low C_oss(tr) = 645 pF ensure reliable operation during grid fault transients and improve ZVS soft-switching range.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC) and 16 kHz PWM. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter module, conducting continuous 30 A RMS current. Use Value: R_thJC = 0.51 °C/W and 150 °C T_J rating allow direct mounting to aluminum heatsink without thermal interface pads, simplifying mechanical design.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW, 96% efficient 48 V output server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switching element in boost PFC stage operating at 120 kHz with 400 V DC link.

Use Value: Kelvin source and low Q_gd enable clean gate waveforms and <0.5% efficiency gain over non-Kelvin alternatives at full load.

Use Scenario: Output rectification and isolation switch in 48 V/50 A telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side full-bridge, driven with adaptive timing control.

Use Value: Fast t_rr and low V_SD (1.2 V) reduce conduction and recovery losses, improving system efficiency by 0.8% at 50% load.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in 5 kW string inverter DC/AC stage using three-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg switching device handling 600 V DC bus with bidirectional current flow during modulation.

Use Value: Avalanche rating and low C_oss(tr) = 645 pF ensure reliable operation during grid fault transients and improve ZVS soft-switching range.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with field-oriented control (FOC) and 16 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter module, conducting continuous 30 A RMS current.

Use Value: R_thJC = 0.51 °C/W and 150 °C T_J rating allow direct mounting to aluminum heatsink without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.055 Ω, no Kelvin source, TO-247 package, higher Q_g (85 nC).	Higher current rating but larger footprint and no Kelvin source; suited for lower-frequency, higher-current industrial drives.	Select STW62N60M2 only when board space permits TO-247 and Kelvin source is not required for gate stability.
IXFH50N60X3	600 V, 50 A, R_DS(on) = 0.065 Ω, TO-247, no Kelvin source, Q_g = 52 nC, slower t_rr (220 ns).	Larger package and slower diode recovery limit usable frequency to ≤80 kHz; less suitable for high-density PFC.	Choose IXFH50N60X3 for cost-sensitive, lower-frequency applications where thermal budget allows TO-247 mounting.

Compared with STW62N60M2 and IXFH50N60X3, SIHH085N60EF-T1GE3 offers superior power density via PowerPAK 8×8, gate drive stability via Kelvin source, and faster switching via lower Q_g and t_rr - making it optimal for compact, high-frequency (>100 kHz), high-reliability power conversion systems.

Availability

SIHH085N60EF-T1GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHH085N60EF-T1GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The EF Series is designed specifically for high-efficiency, high-frequency switched-mode power supplies - targeting PFC, DC/DC, and inverter applications where low switching loss, fast body diode, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHH085N60EF-T1GE3 at 100 °C case temperature?

The SIHH085N60EF-T1GE3 has a continuous drain current rating of 19 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 30 A rating at 25 °C case temperature and is validated under steady-state conditions with proper heatsinking. The linear derating factor is 1.47 W/°C above 100 °C, allowing precise thermal design for SIHH085N60EF-T1GE3 in high-power applications.

Does SIHH085N60EF-T1GE3 support gate drive with 5 V logic-level signals?

No, SIHH085N60EF-T1GE3 is not a logic-level MOSFET. Its gate-source threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and its R_DS(on) is specified at V_GS = 10 V. Driving SIHH085N60EF-T1GE3 with only 5 V may result in incomplete turn-on and excessive conduction loss. A 10–15 V gate drive is required to achieve the specified 0.075 Ω R_DS(on) and ensure reliable switching performance in SIHH085N60EF-T1GE3-based designs.

How does the Kelvin source configuration in SIHH085N60EF-T1GE3 improve switching behavior?

The Kelvin source (Pin 2) in SIHH085N60EF-T1GE3 provides a dedicated low-current return path for the gate driver, decoupling it from high di/dt source current flowing through Pin 3. This eliminates voltage drop across source inductance that would otherwise distort the effective V_GS, preventing false turn-on during high dV/dt transitions. As a result, SIHH085N60EF-T1GE3 maintains precise gate control and stable switching even in fast, high-power hard-switched topologies.

What is the typical reverse recovery charge (Q_rr) of SIHH085N60EF-T1GE3, and why does it matter?

The typical reverse recovery charge Q_rr of SIHH085N60EF-T1GE3 is 0.6 μC, measured at T_J = 25 °C, I_F = 17 A, di/dt = 100 A/μs, and V_R = 400 V. This low Q_rr directly reduces energy loss and peak current stress during body diode commutation - critical for efficiency and EMI in bridge-leg and synchronous rectifier circuits. In SIHH085N60EF-T1GE3, this contributes to its suitability for high-frequency PFC and LLC converters.

Is SIHH085N60EF-T1GE3 suitable for use in solar inverter DC-link switching applications?

Yes, SIHH085N60EF-T1GE3 is explicitly qualified for solar PV inverter applications, including DC-link switching in three-level NPC and T-type topologies. Its 600 V V_DS, avalanche rating (E_AS = 173 mJ), low C_oss(er) = 107 pF, and 150 °C maximum junction temperature support reliable operation under grid fault conditions and high ambient temperatures. The PowerPAK 8×8 package also enables compact, thermally efficient layouts required in SIHH085N60EF-T1GE3-based solar inverters.

SIHH085N60EF-T1GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 85mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2733 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH085N60EF-T1GE3 FAQ

1.How can I place an order for SIHH085N60EF-T1GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH085N60EF-T1GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH085N60EF-T1GE3 reliable?

The price and inventory of SIHH085N60EF-T1GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH085N60EF-T1GE3 is usually 5 days.

3.What payment methods are accepted for SIHH085N60EF-T1GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH085N60EF-T1GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH085N60EF-T1GE3?

SIHH085N60EF-T1GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH085N60EF-T1GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH085N60EF-T1GE3?

For technical support, including SIHH085N60EF-T1GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH085N60EF-T1GE3 requirements.

6.How does Aetrix verify that SIHH085N60EF-T1GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH085N60EF-T1GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH085N60EF-T1GE3 meets industry standards.

7.What is the process for return or replacement of SIHH085N60EF-T1GE3?

All SIHH085N60EF-T1GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH085N60EF-T1GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH085N60EF-T1GE3 part is unused and in its original packaging.

Return procedure for SIHH085N60EF-T1GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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