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Vishay Siliconix SIHH120N60E-T1-GE3
- Part No.:
- SIHH120N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH120N60E-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 24A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:9,851
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Product details
Overview
SIHH120N60E-T1-GE3 from Vishay Siliconix is a 600 V, 24 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with 0.120 Ω RDS(on) at VGS = 10 V, 44 nC total gate charge, and avalanche-rated operation-designed for high-efficiency server power supplies and PFC stages.
For engineers reviewing the SIHH120N60E-T1-GE3 datasheet, SIHH120N60E-T1-GE3 pinout, SIHH120N60E-T1-GE3 application, or SIHH120N60E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), Kelvin source configuration for reduced switching loss, and 56 mJ single-pulse avalanche energy rating under standardized test conditions.
Technical Context
This E-series MOSFET employs 4th-generation silicon technology optimized for hard-switched SMPS topologies. Its low effective output capacitance (Co(er) = 57 pF) and reduced Coss (76 pF) minimize capacitive turn-off losses, while the Kelvin source connection isolates gate drive return from high-current source paths to improve switching control fidelity.
The device features a 600 V VDS rating with ±30 V VGS tolerance, 156 W maximum power dissipation, and RthJC = 0.57 °C/W-enabling high-current operation in thermally constrained industrial and telecom power modules when mounted on adequately sized copper areas.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports primary-side switching in 400 V DC bus PFC and 380 V telecom rectified inputs without derating |
| RDS(on) typ | 0.106 Ω at VGS = 10 V, ID = 12 A - enables <1.5 W conduction loss at 12 A continuous current |
| Qg max | 44 nC - determines gate driver current requirement (~2.2 A peak for 20 ns rise time with 10 V swing) |
| EAS | 56 mJ - rated unclamped inductive switching energy ensures robustness during transient overloads in motor drives and welders |
| Co(er) | 57 pF - energy-equivalent output capacitance directly impacts turn-off loss (Eoff ∝ VDS² × Co(er)) |
| TJ range | –55 °C to +150 °C - qualified for extended thermal operation in sealed industrial enclosures and outdoor PV inverters |
| RthJC | 0.57 °C/W - allows ~110 W dissipation with 63 °C case-to-ambient ΔT, supporting high-power density designs |
Pinout & Package
SIHH120N60E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for thermal performance and four terminals: gate (Pin 1), Kelvin source (Pin 2), power source (Pin 3), and drain (Pin 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control terminal; connects to driver IC output with low-inductance trace to minimize ringing |
| Pin 2 | Kelvin Source | Separate low-current source return for gate driver feedback-eliminates voltage drop error in gate drive loop |
| Pin 3 | Power Source | High-current source path; soldered to large PCB copper pour for current conduction and thermal spreading |
| Pin 4 | Drain | Exposed drain pad (bottom side); must be connected to system ground plane or heatsink for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series silicon | Reduces RDS(on) × Qg FOM by >25% vs. prior generation-directly lowering combined switching and conduction loss |
| Kelvin source configuration | Enables precise gate voltage control independent of source inductance-critical for stable operation above 100 kHz |
| Avalanche energy rating | 56 mJ single-pulse (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω)-provides margin against inductive kickback in motor and welding circuits |
| Low Co(er) | 57 pF - cuts stored output energy (E = ½CV²) by ~40% vs. comparable 600 V MOSFETs, reducing turn-off loss at 480 V bus |
| Pb-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C-ensures compliance for global industrial and telecom deployments |
Applications
| Server Power Supply | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Primary-side switching in 3 kW CRPS or ATX12VO power supplies operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage, high-current synchronous rectifier switch in LLC resonant converter half-bridge leg. Use Value: 0.106 Ω RDS(on) and 44 nC Qg enable >96% efficiency at full load while maintaining thermal headroom on 2-oz copper. |
Use Scenario: Active clamp forward or phase-shifted full-bridge stage in 48 V telecom rectifiers delivering up to 2.5 kW. IC Role / Device Role / Timing Role: Main switching FET handling 20–25 A RMS current with fast dv/dt immunity (100 V/ns). Use Value: Kelvin source minimizes gate oscillation during hard commutation; 56 mJ EAS withstands line surge transients without failure. |
| PV Inverter DC-DC Stage | Industrial Motor Drive Inverter |
|
Use Scenario: Isolated DC-DC converter feeding control circuitry in string inverters with 1000 V DC input. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or active-clamp forward topology. Use Value: 600 V VDS rating provides 2× safety margin over 480 V reflected secondary voltage; low Coss reduces no-load power loss. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive operating at 8 kHz PWM with field-oriented control. IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive short-circuit and regeneration events. Use Value: Avalanche-rated construction sustains 100+ unclamped inductive switching cycles; RthJC = 0.57 °C/W enables compact heatsink integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 62 A, RDS(on) = 0.075 Ω, Qg = 72 nC, TO-247 package | Higher current rating but larger footprint and higher gate charge-requires stronger gate driver and more board area | Preferred where higher continuous current (>30 A) and through-hole mounting are acceptable |
| IXFH32N60P | 600 V, 32 A, RDS(on) = 0.185 Ω, Qg = 52 nC, TO-247 package | Higher RDS(on) increases conduction loss; lacks Kelvin source and avalanche rating | Suitable for cost-sensitive non-avalanche applications where thermal margin exists and layout space permits TO-247 |
Compared with STW62N60M2 and IXFH32N60P, SIHH120N60E-T1-GE3 delivers superior power density via its PowerPAK 8 × 8 footprint, lower switching loss due to Kelvin source and 44 nC Qg, and guaranteed avalanche ruggedness-making it optimal for space-constrained, high-reliability SMPS designs.
Availability
SIHH120N60E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifier modules, and solar PV inverter DC-DC stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIHH120N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability qualification.
The E Series Power MOSFET product line targets high-efficiency, high-power-density switch-mode power conversion-optimized for telecom, server, industrial, and renewable energy applications demanding low loss and rugged operation.
FAQ
What is the maximum continuous drain current rating for SIHH120N60E-T1-GE3 at 100 °C case temperature?
The SIHH120N60E-T1-GE3 has a maximum continuous drain current (ID) of 15 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area and airflow. At 25 °C case temperature, the rating increases to 24 A. Derating follows a linear factor of 1.25 W/°C beyond 100 °C case temperature.
Does SIHH120N60E-T1-GE3 support logic-level gate drive?
No, SIHH120N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for RDS(on) at VGS = 10 V. Driving it reliably requires a gate voltage ≥10 V; operation at 5 V will result in significantly elevated RDS(on) and thermal risk. The SIHH120N60E-T1-GE3 datasheet does not specify parameters for VGS ≤ 5 V.
What is the purpose of the Kelvin source (Pin 2) on SIHH120N60E-T1-GE3?
The Kelvin source (Pin 2) on SIHH120N60E-T1-GE3 provides a dedicated low-current return path for the gate driver's source reference-separating it from the high-current power source (Pin 3). This eliminates voltage drop errors caused by source inductance during fast switching, ensuring accurate gate voltage control and preventing spurious turn-on. It must be routed separately from Pin 3 and connected directly to the driver IC's source pin.
Is SIHH120N60E-T1-GE3 suitable for avalanche operation in production designs?
Yes, SIHH120N60E-T1-GE3 is explicitly rated for unclamped inductive switching with EAS = 56 mJ under defined test conditions (VDD = 140 V, L = 28.2 mH, Rg = 25 Ω, IAS = 2 A). This rating validates its ruggedness for controlled avalanche use in motor drives, welders, and other inductive load applications-provided layout minimizes stray inductance and thermal limits are observed per the SOA curve.
What is the thermal resistance from junction to case (RthJC) for SIHH120N60E-T1-GE3?
The SIHH120N60E-T1-GE3 has a typical junction-to-case (drain) thermal resistance (RthJC) of 0.57 °C/W, with a maximum of 0.80 °C/W. This value applies to heat flow from the silicon die to the exposed drain pad (Pin 4). Effective thermal performance requires soldering the drain pad to a minimum 200 mm² copper area (2 oz) with ≥4 thermal vias to inner ground planes, as recommended in Vishay document 68441.
SIHH120N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1600 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH120N60E-T1-GE3 FAQ
1.How can I place an order for SIHH120N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH120N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH120N60E-T1-GE3 reliable?
The price and inventory of SIHH120N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH120N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH120N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH120N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH120N60E-T1-GE3?
SIHH120N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH120N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH120N60E-T1-GE3?
For technical support, including SIHH120N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH120N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH120N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH120N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH120N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH120N60E-T1-GE3?
All SIHH120N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH120N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH120N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH120N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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