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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH150N60E-T1-GE3

Name: SIHH150N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH150N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH150N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH150N60E-T1-GE3.pdf

Description:: E SERIES POWER MOSFET POWERPAK 8

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Product details

Overview

SIHH150N60E-T1-GE3 from Vishay Siliconix is a 600 V, 19 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features R_DS(on) = 0.137 Ω (typ, V_GS = 10 V), Q_g = 24 nC (typ), and avalanche-rated (E_AS = 179 mJ) operation in server and telecom power systems.

For engineers reviewing the SIHH150N60E-T1-GE3 datasheet, SIHH150N60E-T1-GE3 pinout, SIHH150N60E-T1-GE3 application, or SIHH150N60E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 58 pF, Kelvin-source layout for gate drive stability, and 156 W power dissipation capability at T_C = 25 °C.

Technical Context

This E-series MOSFET employs 4th-generation trench-gate technology to minimize conduction and switching losses simultaneously. Its Kelvin source configuration isolates the power source path from the sense path, enabling precise gate control under high di/dt conditions without source inductance-induced oscillation.

The device supports unclamped inductive switching (UIS) up to 179 mJ and delivers low reverse recovery charge (Q_rr = 3.5 μC typ) with t_rr = 291 ns, making it suitable for hard-switched and resonant topologies where body diode performance impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Withstands DC bus voltages up to 480 V in PFC and 380–400 V in telecom rectifiers with margin.
R_DS(on) typ	0.137 Ω @ V_GS = 10 V - Enables <1.4 W conduction loss at 10 A, critical for thermal management in compact SMPS.
Q_g max	36 nC - Determines gate driver current requirement; 24 nC typical enables efficient 100–300 kHz switching with low driver loss.
E_AS	179 mJ - Supports robust operation during transient overloads and inductive turn-off without failure.
Co(er)	58 pF - Low energy-related output capacitance reduces turn-on switching loss in hard-switched converters.
T_J range	–55 to +150 °C - Rated for continuous operation in industrial and telecom environments with elevated ambient temperatures.
R_thJC max	0.96 °C/W - Enables high-power density designs when mounted on copper-clad PCBs or heatsinks with thermal interface material.

Pinout & Package

SIHH150N60E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for thermal conduction and four terminals: Gate, Source, Kelvin Source, and Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Controls channel conduction; requires low-inductance routing and ≥±30 V rating to support full V_GS swing.
Pin 2	Kelvin Source	Provides dedicated low-noise reference for gate drive loop; must be routed separately from power source to avoid noise coupling.
Pin 3	Source	Carries full load current (up to 19 A); connects to power ground plane with wide copper pour.
Pin 4	Drain	High-side switching node; electrically and thermally connected to exposed bottom pad for heat transfer to PCB.

Key Features

Feature	Design Value
4th-generation E-series trench MOSFET	Delivers lowest R_DS(on) × Q_g FOM among Vishay's 600 V discrete MOSFETs, reducing total switching+conduction loss.
Kelvin source connection	Eliminates source inductance impact on gate control, enabling stable high-speed switching even with >100 A/μs di/dt.
Avalanche energy rated (E_AS)	179 mJ single-pulse rating allows safe operation during inductive turn-off transients without external snubbers.
Low Co(er) and Crss	58 pF Co(er) and 2 pF Crss reduce Miller effect and improve voltage-dependent switching behavior in ZVS/ZCS circuits.
Enhanced body diode performance	Q_rr = 3.5 μC (typ) and t_rr = 291 ns enable efficient operation in synchronous rectification and bidirectional topologies.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW CRPS or ATX12VO server PSUs operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC resonant half-bridge primary leg. Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses; Kelvin source ensures clean turn-on under high di/dt.	Use Scenario: Active clamp forward or phase-shifted full-bridge stage in 48 V telecom rectifiers. IC Role / Device Role / Timing Role: Main switching transistor handling 400 V DC input and 10–15 A peak current. Use Value: 600 V rating provides margin above 400 V bus; E_AS rating protects against transformer leakage inductance spikes.
PFC Boost Converter	Solar PV Inverter
Use Scenario: Continuous conduction mode (CCM) boost switch in 3–5 kW front-end PFC stages. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch synchronized to line frequency and PWM controller. Use Value: Low Co(er) minimizes turn-on loss during zero-voltage switching transitions; Q_rr spec ensures low diode recovery loss.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-reliability 600 V switch in H-bridge or NPC topology operating at 16–25 kHz. Use Value: 150 °C T_J rating and R_thJC = 0.96 °C/W support long-life operation in outdoor enclosures with limited airflow.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW CRPS or ATX12VO server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in LLC resonant half-bridge primary leg.

Use Value: Low R_DS(on) and Q_g reduce conduction and gate drive losses; Kelvin source ensures clean turn-on under high di/dt.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching transistor handling 400 V DC input and 10–15 A peak current.

Use Value: 600 V rating provides margin above 400 V bus; E_AS rating protects against transformer leakage inductance spikes.

PFC Boost Converter

Solar PV Inverter

Use Scenario: Continuous conduction mode (CCM) boost switch in 3–5 kW front-end PFC stages.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch synchronized to line frequency and PWM controller.

Use Value: Low Co(er) minimizes turn-on loss during zero-voltage switching transitions; Q_rr spec ensures low diode recovery loss.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-reliability 600 V switch in H-bridge or NPC topology operating at 16–25 kHz.

Use Value: 150 °C T_J rating and R_thJC = 0.96 °C/W support long-life operation in outdoor enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 57 A, TO-247; R_DS(on) = 0.055 Ω; no Kelvin source; higher Q_g (65 nC).	Higher current rating but larger footprint and no Kelvin sensing; better suited for lower-frequency, higher-current industrial drives.	Choose STW62N60M2 only if board space permits TO-247 and system di/dt is <50 A/μs.
IXFH30N60P	600 V, 30 A, TO-247; R_DS(on) = 0.135 Ω; standard 3-pin; Q_g = 45 nC; no UIS rating.	Lacks avalanche rating and Kelvin source; higher gate charge increases driver loss at >200 kHz.	Select IXFH30N60P only for cost-sensitive, non-avalanche-critical applications below 150 kHz switching.

Compared with STW62N60M2 and IXFH30N60P, SIHH150N60E-T1-GE3 offers superior high-frequency efficiency via Kelvin source and low Co(er), while maintaining competitive R_DS(on) in a compact 8 mm × 8 mm footprint-ideal for space-constrained, high-reliability power conversion.

Availability

SIHH150N60E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, PFC boost converters, and solar PV inverters requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for SIHH150N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The E Series Power MOSFET product line targets high-efficiency, high-density power conversion in datacenter, telecom, and renewable energy systems-designed to reduce total system loss through advanced trench architecture and Kelvin-source packaging.

FAQ

What is the maximum continuous drain current for SIHH150N60E-T1-GE3 at 100 °C case temperature?

The maximum continuous drain current for SIHH150N60E-T1-GE3 is 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 8 × 8 package and ensures reliable operation within the 150 °C maximum junction temperature. The SIHH150N60E-T1-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHH150N60E-T1-GE3 support gate drive at 5 V logic level?

No, SIHH150N60E-T1-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and R_DS(on) is specified at V_GS = 10 V. Driving the SIHH150N60E-T1-GE3 with only 5 V risks incomplete enhancement and excessive conduction loss. A minimum 10 V gate drive is required to achieve the rated 0.137 Ω R_DS(on).

How does the Kelvin source connection in SIHH150N60E-T1-GE3 improve switching performance?

The Kelvin source connection in SIHH150N60E-T1-GE3 separates the high-current power source path (Pin 3) from the low-noise gate reference path (Pin 2), eliminating voltage drop across source inductance during fast switching. This prevents gate oscillation and false turn-off, especially critical in high-di/dt applications like PFC and LLC converters. The SIHH150N60E-T1-GE3 achieves stable 20 ns turn-on delay and 27 ns rise time precisely because of this layout advantage.

Is SIHH150N60E-T1-GE3 suitable for use in avalanche conditions?

Yes, SIHH150N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy E_AS of 179 mJ at T_J = 25 °C. This rating is validated per JEDEC JESD24-1 and allows the SIHH150N60E-T1-GE3 to safely absorb inductive energy during abnormal turn-off events-such as transformer saturation or short-circuit faults-without degradation or failure.

What is the thermal resistance from junction to case (R_thJC) for SIHH150N60E-T1-GE3?

The maximum junction-to-case thermal resistance R_thJC for SIHH150N60E-T1-GE3 is 0.96 °C/W, with a typical value of 0.72 °C/W. This low value is enabled by the exposed drain pad in the PowerPAK® 8 × 8 package, which provides direct thermal conduction to the PCB copper layer. When designing heatsinking for the SIHH150N60E-T1-GE3, this R_thJC value must be combined with board-level thermal resistance to calculate total junction temperature rise.

SIHH150N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1514 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH150N60E-T1-GE3 FAQ

1.How can I place an order for SIHH150N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH150N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH150N60E-T1-GE3 reliable?

The price and inventory of SIHH150N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH150N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH150N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH150N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH150N60E-T1-GE3?

SIHH150N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH150N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH150N60E-T1-GE3?

For technical support, including SIHH150N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH150N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH150N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH150N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH150N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH150N60E-T1-GE3?

All SIHH150N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH150N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH150N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH150N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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