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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHH26N60E-T1-GE3

Name: SIHH26N60E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHH26N60E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHH26N60E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: SIHH26N60E-T1-GE3.pdf

Description:: MOSFET N-CH 600V 25A PPAK 8 X 8

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Product details

Overview

SIHH26N60E-T1-GE3 from Vishay Siliconix is a 600 V, 25 A N-channel PowerPAK® 8 × 8 surface-mount MOSFET with Kelvin source connection, R_DS(on) = 0.117 Ω at V_GS = 10 V, Q_g = 77 nC (typ), and rated for unclamped inductive switching (UIS) up to 353 mJ - optimized for high-efficiency server power supplies and PFC stages.

For engineers reviewing the SIHH26N60E-T1-GE3 datasheet, SIHH26N60E-T1-GE3 pinout, SIHH26N60E-T1-GE3 application, or SIHH26N60E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced gate noise via Kelvin source, and thermal performance with R_thJC = 0.48 °C/W - critical for high-density SMPS and solar inverters.

Technical Context

This E-series MOSFET employs planar trench-gate silicon technology with integrated Kelvin source terminal to decouple power and signal return paths, minimizing gate drive loop inductance and improving switching stability under high dI/dt conditions. Its 600 V V_DS rating supports universal input AC/DC front-end designs.

The device features avalanche-rated ruggedness (E_AS = 353 mJ), low C_iss = 2815 pF, and fast body diode recovery (t_rr = 459 ns typ) - enabling reliable operation in hard-switched topologies such as boost PFC and LLC resonant converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for transient overvoltage in telecom/server PSUs
R_DS(on) typ @ 10 V	0.117 Ω - enables <2.5 W conduction loss at 13 A continuous drain current
Q_g max	116 nC - determines gate driver power requirement and switching speed in 100–300 kHz PFC stages
E_AS	353 mJ - ensures single-pulse robustness during output short-circuit or startup inverter faults
R_thJC max	0.62 °C/W - allows >150 W power dissipation with ≤95 °C case temperature rise under forced air cooling
C_iss	2815 pF - impacts Miller effect and gate drive energy in high-side switch configurations
t_rr	459 ns (typ) - reduces reverse recovery losses and EMI in discontinuous conduction mode (DCM) operation

Pinout & Package

Package: PowerPAK® 8 × 8 (8.0 mm × 8.0 mm × 1.0 mm), thermally enhanced copper-clip package with exposed drain pad on bottom side and four-surface solderable terminals.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate control terminal; connects to gate driver IC output with low-inductance trace
Pin 2	Kelvin Source	Dedicated low-current source return for gate driver feedback - isolates power source path to minimize V_GS distortion
Pin 3	Source	Main power source terminal; carries full load current and connects to power ground plane
Pin 4	Drain	Exposed copper pad on underside; electrically and thermally connected to PCB copper pour for heat sinking

Key Features

Feature	Design Value
Kelvin source connection	Separates gate drive return from high-current source path, reducing gate oscillation and improving turn-off consistency under high dI/dt
Low R_DS(on) × Q_g figure-of-merit	13.7 Ω·nC (0.117 Ω × 116 nC) - balances conduction and switching losses for optimal efficiency at 100–250 kHz
Avalanche energy rating	353 mJ single-pulse - eliminates need for external clamping in inductive load transients common in motor drives and welders
Lead (Pb)-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C - suitable for industrial and telecom equipment with strict environmental compliance
Ultra-low gate charge	Q_g = 77 nC (typ) - reduces gate driver IC stress and enables use of lower-cost drivers in high-volume SMPS designs

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: High-density 3 kW+ AC/DC front-end with active clamp forward or interleaved PFC. IC Role / Device Role / Timing Role: Main switch in boost PFC stage operating at 100–200 kHz with 400 V DC bus. Use Value: Kelvin source minimizes gate ringing during zero-crossing transitions, while 600 V rating accommodates 480 VAC surge peaks per IEC 61000-4-5.	Use Scenario: Two-level string inverter DC/AC stage with unipolar PWM modulation. IC Role / Device Role / Timing Role: High-side switching element in H-bridge leg handling 1000 V DC input with 50 kHz carrier frequency. Use Value: Low C_iss and fast t_rr reduce shoot-through risk and switching losses during dead-time transitions, improving inverter efficiency by ≥0.4 % at full load.
Industrial Motor Drive	LED Streetlight Driver
Use Scenario: 7.5 kW variable-frequency drive with regenerative braking and dynamic braking resistor control. IC Role / Device Role / Timing Role: Brake chopper switch activated during overvoltage events on DC bus. Use Value: UIS rating of 353 mJ ensures reliable energy absorption during rapid motor deceleration without failure - eliminating need for external TVS or Zener clamps.	Use Scenario: Constant-current 300 W LED driver for outdoor street lighting with DALI dimming interface. IC Role / Device Role / Timing Role: Primary-side switch in flyback topology operating in quasi-resonant (QR) mode at 65–120 kHz. Use Value: Low Q_g enables clean zero-voltage switching (ZVS) initiation across line range, reducing EMI and improving light-output stability under voltage sags.

Server Power Supply

Photovoltaic Inverter

Use Scenario: High-density 3 kW+ AC/DC front-end with active clamp forward or interleaved PFC.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage operating at 100–200 kHz with 400 V DC bus.

Use Value: Kelvin source minimizes gate ringing during zero-crossing transitions, while 600 V rating accommodates 480 VAC surge peaks per IEC 61000-4-5.

Use Scenario: Two-level string inverter DC/AC stage with unipolar PWM modulation.

IC Role / Device Role / Timing Role: High-side switching element in H-bridge leg handling 1000 V DC input with 50 kHz carrier frequency.

Use Value: Low C_iss and fast t_rr reduce shoot-through risk and switching losses during dead-time transitions, improving inverter efficiency by ≥0.4 % at full load.

Industrial Motor Drive

LED Streetlight Driver

Use Scenario: 7.5 kW variable-frequency drive with regenerative braking and dynamic braking resistor control.

IC Role / Device Role / Timing Role: Brake chopper switch activated during overvoltage events on DC bus.

Use Value: UIS rating of 353 mJ ensures reliable energy absorption during rapid motor deceleration without failure - eliminating need for external TVS or Zener clamps.

Use Scenario: Constant-current 300 W LED driver for outdoor street lighting with DALI dimming interface.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology operating in quasi-resonant (QR) mode at 65–120 kHz.

Use Value: Low Q_g enables clean zero-voltage switching (ZVS) initiation across line range, reducing EMI and improving light-output stability under voltage sags.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.065 Ω, Q_g = 120 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge - requires larger heatsink and stronger gate driver	Select when higher continuous current (>30 A) is required and board space permits TO-247 mounting
IXFH40N60P	600 V, 40 A, R_DS(on) = 0.085 Ω, Q_g = 145 nC, TO-247 package with fast body diode	No Kelvin source; higher Q_g increases driver losses; superior diode t_rr (250 ns) but no avalanche rating	Prefer for resonant topologies where diode recovery dominates losses, but avoid in hard-switched PFC with inductive fault risk

Compared with STW48N60M2 and IXFH40N60P, SIHH26N60E-T1-GE3 delivers superior gate drive stability via Kelvin source and best-in-class FOM for compact, high-frequency PFC - making it optimal for space-constrained server and telecom power modules where layout-induced oscillation must be minimized.

Availability

SIHH26N60E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHH26N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching applications in server, telecom, industrial, and renewable energy systems - engineered for low FOM, Kelvin-source noise immunity, and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHH26N60E-T1-GE3 at 100 °C case temperature?

The SIHH26N60E-T1-GE3 supports 16 A continuous drain current at T_C = 100 °C, derated linearly from 25 A at 25 °C using a 1.6 W/°C factor. This rating assumes proper PCB copper area and airflow per Vishay's recommended PowerPAK® 8 × 8 thermal layout guidelines in document 68441.

Does SIHH26N60E-T1-GE3 include an integrated body diode, and what are its key recovery characteristics?

Yes, SIHH26N60E-T1-GE3 includes an integral body diode with t_rr = 459 ns (typ), Q_rr = 7.6 μC (typ), and V_SD = 0.9 V (typ) at I_S = 13 A and T_J = 25 °C. These values are measured under standardized conditions (dI/dt = 100 A/μs, V_R = 25 V) and enable predictable performance in synchronous rectification and freewheeling roles.

How does the Kelvin source configuration in SIHH26N60E-T1-GE3 improve gate drive performance?

The Kelvin source in SIHH26N60E-T1-GE3 separates the gate return path from the main source current path, eliminating voltage drop-induced gate threshold shift during high dI/dt switching. This preserves accurate V_GS control, suppresses parasitic turn-on, and improves timing consistency - especially critical in multi-phase PFC and high-frequency LLC designs.

What is the thermal resistance from junction to case (R_thJC) for SIHH26N60E-T1-GE3, and how is it measured?

The SIHH26N60E-T1-GE3 has a typical R_thJC of 0.48 °C/W, measured from the silicon die junction to the exposed drain pad (Pin 4). This value is validated per JESD51-14 and reflects direct thermal conduction through the copper clip - enabling accurate junction temperature estimation when the drain pad is soldered to a thermally optimized PCB copper pour.

Is SIHH26N60E-T1-GE3 suitable for use in automotive applications?

No, SIHH26N60E-T1-GE3 is not qualified to AEC-Q101 or automotive-grade reliability standards. It is specified for industrial, telecom, and renewable energy applications only. For automotive use, Vishay offers the SQ series (e.g., SQM26N60E) with extended temperature range and qualification testing.

SIHH26N60E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 135mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 116 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2815 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 202W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SIHH26N60E-T1-GE3 FAQ

1.How can I place an order for SIHH26N60E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHH26N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHH26N60E-T1-GE3 reliable?

The price and inventory of SIHH26N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH26N60E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHH26N60E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH26N60E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHH26N60E-T1-GE3?

SIHH26N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHH26N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHH26N60E-T1-GE3?

For technical support, including SIHH26N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH26N60E-T1-GE3 requirements.

6.How does Aetrix verify that SIHH26N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHH26N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH26N60E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHH26N60E-T1-GE3?

All SIHH26N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH26N60E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHH26N60E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHH26N60E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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