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Vishay Siliconix SIHJ8N60E-T1-GE3
- Part No.:
- SIHJ8N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIHJ8N60E-T1-GE3.pdf
- Description:
- MOSFET N-CH 600V 8A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,881
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Product details
Overview
SIHJ8N60E-T1-GE3 from Vishay Siliconix is a 600 V, 8 A N-channel Power MOSFET in PowerPAK® SO-8L package, featuring RDS(on) = 0.45 Ω (typ. at VGS = 10 V), Qg = 22 nC (typ.), and avalanche-rated (EAS = 88 mJ). It delivers low conduction and switching losses for high-efficiency flyback and SMPS primary-side switching.
For engineers reviewing the SIHJ8N60E-T1-GE3 datasheet, SIHJ8N60E-T1-GE3 pinout, SIHJ8N60E-T1-GE3 application, or SIHJ8N60E-T1-GE3 equivalent, key selection criteria include its 600 V VDS, 0.45 Ω RDS(on), 22 nC gate charge, 88 mJ unclamped inductive switching capability, and PowerPAK SO-8L thermal performance (RthJC = 1.0 °C/W).
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage, medium-current power conversion. Its low Ciss (754 pF) and ultra-low Qgd/Qg ratio (10/22 nC) reduce Miller effect and improve hard-switching robustness in discontinuous conduction mode (DCM) flyback topologies.
The device integrates an intrinsic body diode with trr = 258 ns (typ.) and Qrr = 2.4 μC (typ.), enabling controlled reverse recovery in quasi-resonant converters. Its 1.0 °C/W junction-to-case thermal resistance supports high-power density designs when mounted on copper-clad PCBs with thermal pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full-line input surges up to 480 V DC in universal-input SMPS without derating. |
| RDS(on) (VGS = 10 V) | 0.45 Ω (typ.) - Enables ≤ 14.4 W conduction loss at 8 A continuous drain current (TC = 25 °C). |
| Qg | 22 nC (typ.) - Reduces gate drive power and enables use of low-cost, low-current drivers (e.g., <100 mA peak). |
| EAS | 88 mJ - Supports reliable operation under unclamped inductive switching stress without external snubbers. |
| Ciss | 754 pF - Minimizes capacitive loading on gate driver, improving rise/fall time control and reducing switching node ringing. |
| RthJC | 1.0 °C/W (typ.) - Allows >80 W power dissipation with modest heatsinking (e.g., 1-in² 2-oz Cu pad). |
| tr/tf | 15/14 ns (typ.) - Enables efficient operation at 100–300 kHz switching frequencies with low overlap loss. |
Pinout & Package
Package: PowerPAK® SO-8L (single-side thermal pad, 5.13 mm × 6.15 mm footprint, 1.07 mm height). Exposed drain pad on bottom surface provides low-inductance, low-thermal-resistance path to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 10 V logic-level drive; ±30 V absolute max rating ensures compatibility with standard gate drivers. |
| D (Drain) | High-side power output | Connected internally to exposed thermal pad; must be soldered to large copper area for thermal and electrical integrity. |
| S (Source) | Reference node / return path | Common source connection for gate drive loop; low-inductance layout critical to minimize dV/dt-induced false turn-on. |
| S (Pin 2) | Source (redundant) | Second source pin improves current sharing and reduces source inductance in high-di/dt applications. |
| S (Pin 3) | Source (redundant) | Third source pin further lowers parasitic inductance in fast-switching flyback primary circuits. |
| S (Pin 4) | Source (redundant) | Fourth source pin completes low-impedance source return path for stable gate control and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low FOM (RDS(on) × Qg) | 10.0 Ω·nC (0.45 Ω × 22 nC) - Balances conduction and switching loss for optimal efficiency at 65–135 kHz. |
| Avalanche energy rated (UIS) | 88 mJ - Eliminates need for external clamping circuits in flyback transformer leakage energy handling. |
| Ultra-low Qgd/Qg ratio | 45 % (10/22 nC) - Suppresses Miller-induced shoot-through risk during high dV/dt transitions (>70 V/ns). |
| Low Ciss and Coss | 754 pF / 46 pF - Reduces driver power consumption and improves EMI profile in compact adapters. |
| Enhanced body diode softness | trr = 258 ns, Qrr = 2.4 μC - Limits voltage overshoot and EMI during diode commutation in QR flyback. |
Applications
| LED Driver | Flyback SMPS |
|---|---|
|
Use Scenario: Constant-current LED driver for commercial downlights operating from 90–264 V AC input. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer-coupled secondary rectifier stage. Use Value: 600 V rating withstands 264 V AC + 100 % surge; 0.45 Ω RDS(on) keeps thermal rise below 60 °C on 1-in² thermal pad. |
Use Scenario: 36 W universal-input offline adapter powering USB-C PD devices. IC Role / Device Role / Timing Role: Main switching transistor in DCM flyback converter running at 100–135 kHz. Use Value: 22 nC Qg allows direct drive from UC384X controller; 88 mJ EAS absorbs leakage inductance spikes without snubber. |
| HID Ballast | Wall Adapter |
|
Use Scenario: Electronic ballast for 70 W metal halide lamp with active PFC front-end. IC Role / Device Role / Timing Role: Inverter-stage switch modulating resonant tank after PFC boost stage. Use Value: 8 A ID (TC = 25 °C) supports 70 W output with 25 % duty cycle; 1.0 °C/W RthJC maintains TJ < 125 °C. |
Use Scenario: Compact 12 V/3 A wall plug-in adapter for IoT sensors and smart home hubs. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley-switching control. Use Value: Soft-recovery body diode (Qrr = 2.4 μC) enables zero-voltage switching at light loads, improving no-load efficiency to < 75 mW. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK60ZFP | 600 V, 8 A, RDS(on) = 0.52 Ω, Qg = 35 nC, TO-220FP package | Higher RDS(on) and Qg; requires heatsink; larger footprint | Preferred where through-hole assembly or higher surge margin is required; not drop-in for PowerPAK SO-8L layouts. |
| IXTP8N60P | 600 V, 8 A, RDS(on) = 0.55 Ω, Qg = 32 nC, TO-220 package | Higher thermal resistance (RthJC = 2.5 °C/W); no integrated thermal pad | Suitable for lower-density boards with discrete heatsinking; unsuitable for space-constrained SMT-only designs. |
Compared with STP8NK60ZFP and IXTP8N60P, SIHJ8N60E-T1-GE3 offers 15 % lower RDS(on), 37 % lower Qg, and 60 % better thermal resistance - enabling smaller PCB area, cooler operation, and simpler gate drive in high-frequency flyback and LED driver designs.
Availability
SIHJ8N60E-T1-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies (SMPS), flyback converters, and HID/fluorescent lighting ballasts requiring stable component supply and long-term industrial availability.
Supply support for SIHJ8N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIHJ8N60E-T1-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-reliability primary-side switching in compact, cost-sensitive offline power converters.
FAQ
What is the maximum continuous drain current for SIHJ8N60E-T1-GE3 at 100 °C case temperature?
The SIHJ8N60E-T1-GE3 supports 5 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation without exceeding 150 °C junction temperature under typical board-mount conditions.
Does SIHJ8N60E-T1-GE3 have avalanche capability, and how is it specified?
Yes, SIHJ8N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with EAS = 88 mJ (single-pulse, test condition: VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, IAS = 2.5 A). This rating is guaranteed and tested per JEDEC standards, enabling robust operation in flyback transformer leakage energy handling.
What is the gate threshold voltage range for SIHJ8N60E-T1-GE3, and why does it matter for drive circuit design?
The SIHJ8N60E-T1-GE3 has a gate threshold voltage VGS(th) of 2–4 V (min–max at ID = 250 μA). This range confirms logic-level compatibility but requires gate drive ≥ 10 V to ensure full enhancement and minimal RDS(on). Driving at only 5 V yields significantly higher on-resistance and conduction loss, so 10–15 V drive is recommended for optimal efficiency.
How does the PowerPAK SO-8L package of SIHJ8N60E-T1-GE3 improve thermal performance compared to standard SO-8?
The SIHJ8N60E-T1-GE3 uses PowerPAK SO-8L, which features an exposed drain pad on the bottom surface soldered directly to PCB copper. This achieves RthJC = 1.0 °C/W (typ.), versus ~3–4 °C/W for standard SO-8. The result is up to 70 % lower junction-to-board thermal resistance, allowing higher power density and eliminating need for external heatsinks in many 30–60 W applications.
Can SIHJ8N60E-T1-GE3 replace older 600 V MOSFETs like STP8NK60Z in existing designs?
SIHJ8N60E-T1-GE3 is not a pin-compatible replacement for STP8NK60Z due to differing packages (PowerPAK SO-8L vs. TO-220FP) and pinouts. While both are 600 V/8 A devices, layout redesign is required. However, its lower RDS(on), Qg, and superior thermal performance make it a compelling upgrade path for new designs targeting higher efficiency and smaller form factors.
SIHJ8N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 520mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 754 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 89W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIHJ8N60E-T1-GE3 FAQ
1.How can I place an order for SIHJ8N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHJ8N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHJ8N60E-T1-GE3 reliable?
The price and inventory of SIHJ8N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHJ8N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHJ8N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHJ8N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHJ8N60E-T1-GE3?
SIHJ8N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHJ8N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHJ8N60E-T1-GE3?
For technical support, including SIHJ8N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHJ8N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHJ8N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHJ8N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHJ8N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHJ8N60E-T1-GE3?
All SIHJ8N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHJ8N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHJ8N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHJ8N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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