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Vishay Siliconix SIHK105N60E-T1-GE3
- Part No.:
- SIHK105N60E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerBSFN
- Datasheet:
-
SIHK105N60E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET WITH FAST
- Quantity:
- Payment:
- Shipping:
Inventory:2,050
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Product details
Overview
SIHK105N60E-T1-GE3 from Vishay Siliconix is a 600 V, 24 A N-channel Power MOSFET in PowerPAK® 10 x 12 (TOLL) package with RDS(on) = 0.090 Ω at VGS = 10 V, Qg = 34 nC (typ), and fast body diode (trr = 102 ns typ). It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom rectifiers.
For engineers reviewing the SIHK105N60E-T1-GE3 datasheet, SIHK105N60E-T1-GE3 pinout, SIHK105N60E-T1-GE3 application, or SIHK105N60E-T1-GE3 equivalent, key selection criteria include avalanche-rated energy (EAS = 154 mJ), Co(er) = 85 pF, dv/dt capability (100 V/ns), and thermal resistance RthJC = 0.88 °C/W - all critical for hard-switched industrial power converters.
Technical Context
This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for high-voltage, medium-current applications requiring robust unclamped inductive switching performance and fast body diode recovery. Its low RDS(on) × Qg figure-of-merit (FOM) directly reduces total gate drive loss and conduction loss trade-off in continuous conduction mode (CCM) PFC boost stages.
The device integrates an avalanche-energy-rated body diode with trr = 102 ns (typ) and Qrr = 0.6 μC (typ) at TJ = 25 °C, enabling reliable operation in synchronous rectification and bidirectional topologies without external anti-parallel diodes. Its 600 V VDS rating supports 400 V DC bus designs with 50 V margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Supports 400 V DC bus with 50 V safety margin in telecom/server PSUs |
| RDS(on) typ @ 10 V | 0.090 Ω - Enables ≤ 2.16 W conduction loss at 15 A continuous drain current |
| Qg typ | 34 nC - Reduces gate driver power demand and switching transition time in 100–300 kHz PFC stages |
| EAS | 154 mJ - Withstands single-pulse inductive energy without failure in hard-switched motor drives |
| trr typ | 102 ns - Limits reverse recovery loss and EMI generation during diode commutation in bridge legs |
| RthJC | 0.88 °C/W - Allows ≥ 142 W power dissipation with <130 °C junction rise above 25 °C case temperature |
| Co(er) | 85 pF - Low effective output capacitance minimizes turn-on loss in ZVS-assisted topologies |
Pinout & Package
SIHK105N60E-T1-GE3 uses the PowerPAK® 10 x 12 (TOLL) thermally enhanced surface-mount package with exposed drain tab on bottom side for direct PCB heatsinking. The package features 8-pin configuration: pins 3–8 are source-connected internally to the drain tab; pin 2 is driver source; pin 1 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (tab) | Main power drain terminal | Exposed copper pad on underside - must be soldered to large copper pour for thermal management and low-inductance return path |
| Pins 3–8 | Source terminals | Internally bonded to source metallization - provide parallel low-resistance source connection for reduced loop inductance |
| Pin 2 | Driver source (Kelvin source) | Separate Kelvin connection for gate driver return - isolates gate loop from high di/dt source paths to improve switching stability |
| Pin 1 | Gate input | Control terminal for MOSFET channel - requires low-impedance gate driver (<1 Ω Rg) to achieve specified td(on)/tr |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation EF-series silicon | Optimized cell layout delivering 18% lower RDS(on) × Qg FOM vs. prior E-series, reducing combined conduction/switching loss |
| Avalanche energy rated (UIS) | 154 mJ single-pulse rating enables robustness against transient overloads in welding and induction heating inverters |
| Fast body diode | 102 ns reverse recovery time and 0.6 μC Qrr reduce diode-induced voltage spikes and EMI in half-bridge LLC resonant converters |
| Low Co(er) | 85 pF effective output capacitance cuts turn-on switching loss by ~35% vs. standard 600 V MOSFETs with comparable RDS(on) |
| Thermally enhanced TOLL package | 0.88 °C/W RthJC enables 142 W power dissipation with minimal heatsink - ideal for space-constrained 1U server PSUs |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Output Stage |
|---|---|
Use Scenario: Boost converter in 3.5 kW front-end PFC module operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology; handles 24 A RMS input current. Use Value: 0.090 Ω RDS(on) and 34 nC Qg minimize combined conduction and gate loss, achieving >98.2% efficiency at full load. |
Use Scenario: Synchronous rectification in 48 V/50 A telecom rectifier with 300 kHz phase-shifted full-bridge. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diodes; operates with 100 ns dead-time control. Use Value: Fast 102 ns trr and low Qrr prevent shoot-through and reduce voltage overshoot during body-diode commutation. |
| Solar PV Inverter DC-DC Stage | Industrial Motor Drive Inverter Leg |
Use Scenario: Isolated DC-DC stage in string-level optimizer converting 60–150 V PV input to 400 V bus. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology; switches at 200 kHz with 50% duty cycle. Use Value: 154 mJ EAS withstands leakage inductance energy during clamp reset, eliminating need for snubbers. |
Use Scenario: High-side switch in 7.5 kW three-phase inverter driving permanent magnet motor at 10 kHz PWM. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V class inverter leg; operated with 15 V gate drive. Use Value: 0.88 °C/W RthJC allows direct PCB copper cooling, eliminating discrete heatsinks in compact VFD enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N60M2 | 600 V, 57 A, RDS(on) = 0.055 Ω, Qg = 62 nC, TO-247 package | Higher current rating but larger footprint and higher gate charge - better suited for 3 kW+ industrial inverters | Select when higher ID and TO-247 mechanical robustness outweigh surface-mount density requirements |
| IXFH50N60X3 | 600 V, 50 A, RDS(on) = 0.065 Ω, Qg = 55 nC, TO-247 package with ultra-fast diode (trr = 55 ns) | Lower RDS(on) and faster diode but no Kelvin source - less stable in high-di/dt synchronous rectification | Prefer for ZVS resonant converters where diode speed dominates; avoid in hard-switched PFC with tight layout constraints |
Compared with STW62N60M2 and IXFH50N60X3, SIHK105N60E-T1-GE3 offers superior power density via TOLL packaging, Kelvin source for gate-loop isolation, and balanced FOM for 1–5 kW CCM PFC - making it optimal for space-limited, high-reliability telecom and server power systems.
Availability
SIHK105N60E-T1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term lifecycle support.
Supply support for SIHK105N60E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The EF-series Power MOSFETs are engineered for high-efficiency, high-reliability switching in 400–800 V DC bus systems - targeting next-generation PFC, UPS, and renewable energy conversion where thermal density and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for SIHK105N60E-T1-GE3 at 100 °C case temperature?
The SIHK105N60E-T1-GE3 has a continuous drain current rating of 15 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 24 A rating at 25 °C case temperature, based on a linear derating factor of 1.14 W/°C and RthJC = 0.88 °C/W. Engineers must verify board-level thermal design meets this condition for sustained operation.
Does SIHK105N60E-T1-GE3 include a Kelvin source connection, and how is it implemented?
Yes, SIHK105N60E-T1-GE3 implements a dedicated Kelvin source connection at pin 2. This separate low-current source terminal isolates the gate driver return path from high-di/dt main source current flowing through pins 3–8 and the drain tab. This design minimizes gate loop inductance and prevents voltage spikes that could cause false turn-on, especially critical in high-frequency PFC and synchronous rectifier applications using the SIHK105N60E-T1-GE3.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHK105N60E-T1-GE3, and under what conditions is it measured?
The typical reverse recovery charge (Qrr) of the SIHK105N60E-T1-GE3 body diode is 0.6 μC, measured at TJ = 25 °C with IF = IS = 12 A, di/dt = 100 A/μs, and VR = 400 V. This parameter directly impacts switching loss and EMI in bridge-leg configurations - lower Qrr reduces tail current and associated voltage overshoot during commutation, a key advantage of the EF-series silicon used in SIHK105N60E-T1-GE3.
Can SIHK105N60E-T1-GE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?
Yes, SIHK105N60E-T1-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (EAS) of 154 mJ, tested per JEDEC standard with VDD = 120 V, L = 28.2 mH, Rg = 25 Ω, and IAS = 3.3 A. This ruggedness enables use in non-ZVS topologies like hard-switched flyback or forward converters where leakage inductance energy must be absorbed - a verified capability of the SIHK105N60E-T1-GE3 confirmed in Vishay's characterization data.
What is the gate-source threshold voltage range for SIHK105N60E-T1-GE3, and why does it matter for gate drive design?
The gate-source threshold voltage (VGS(th)) for SIHK105N60E-T1-GE3 is specified from 3.0 V to 5.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise coupling - critical in high-noise industrial environments. Designers must ensure gate drive voltage exceeds 5 V to guarantee full enhancement across process and temperature variation, a requirement consistently met in SIHK105N60E-T1-GE3 applications.
SIHK105N60E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- EF
- Package/Case:
- 8-PowerBSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2301 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 142W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK®10 x 12
SIHK105N60E-T1-GE3 FAQ
1.How can I place an order for SIHK105N60E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHK105N60E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHK105N60E-T1-GE3 reliable?
The price and inventory of SIHK105N60E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK105N60E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHK105N60E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK105N60E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHK105N60E-T1-GE3?
SIHK105N60E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHK105N60E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHK105N60E-T1-GE3?
For technical support, including SIHK105N60E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK105N60E-T1-GE3 requirements.
6.How does Aetrix verify that SIHK105N60E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHK105N60E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK105N60E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHK105N60E-T1-GE3?
All SIHK105N60E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK105N60E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHK105N60E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHK105N60E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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