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Vishay Siliconix SIHP054N65E-GE3
- Part No.:
- SIHP054N65E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHP054N65E-GE3.pdf
- Description:
- E SERIES POWER MOSFET TO-220AB,
- Quantity:
- Payment:
- Shipping:
Inventory:1,037
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Product details
Overview
SIHP054N65E-GE3 from Vishay Siliconix is a 650 V, 47 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring 0.051 Ω RDS(on) at VGS = 10 V, 108 nC total gate charge, and avalanche-rated operation for high-reliability switching in hard-switched PFC and SMPS stages.
For engineers reviewing the SIHP054N65E-GE3 datasheet, SIHP054N65E-GE3 pinout, SIHP054N65E-GE3 application, or SIHP054N65E-GE3 equivalent, key selection criteria include its 650 V blocking rating, low 0.051 Ω conduction resistance at 25 °C, 285 mJ single-pulse avalanche energy, and E-series optimized FOM for telecom/server power supply efficiency and thermal robustness.
Technical Context
This device implements Vishay's 4th-generation E-series superjunction architecture, delivering reduced Coss(er) (115 pF) and low Qg/RDS(on) figure-of-merit to minimize both conduction and switching losses in continuous conduction mode (CCM) PFC and high-frequency LLC resonant converters.
It supports fast switching with 35 ns turn-on delay and 32 ns fall time under 520 V/20 A conditions, while maintaining 100 V/ns dv/dt immunity at TJ = 125 °C and integrated body diode recovery characteristics (trr = 513 ns typ., Qrr = 7.1 μC) suitable for synchronous rectification and bidirectional topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - Enables use in universal-input 380–400 VDC bus PFC stages and 400 VDC industrial SMPS without derating |
| RDS(on) typ. | 0.051 Ω @ VGS = 10 V - Delivers ≤20.4 W conduction loss at 20 A, supporting thermally constrained 312 W PD envelope |
| Qg max | 108 nC - Determines gate driver current requirement (~10.8 mA avg. for 1 MHz switching with 10 V swing) |
| EAS | 285 mJ - Ensures ruggedness against unclamped inductive switching events in motor drive and welding inverters |
| RthJC | 0.4 °C/W - Enables direct heatsink mounting for high-power density designs with <12 °C junction rise at 30 A continuous |
| trr | 513 ns typ. - Limits reverse recovery loss and EMI in bridge-leg configurations operating above 50 kHz |
| ID cont. | 47 A @ TC = 25 °C - Supports high-current output stages in server VRMs and telecom rectifiers |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and 1.6 mm creepage/clearance per IEC 60950-1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires ≥10 V to achieve rated RDS(on); threshold 3.0–5.0 V |
| D (Drain) | High-side power terminal | Connected to heatsink via isolated tab; carries full load current and withstands 650 V transient spikes |
| S (Source) | Reference node / return path | Serves as local ground reference for gate drive; carries 47 A continuous; body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | 5.5 mΩ·nC - Reduces combined conduction + switching loss by >15% vs. prior-gen 650 V MOSFETs in 100 kHz PFC |
| Energy-related Coss(er) | 115 pF - Lowers capacitive turn-off loss and improves light-load efficiency in ZVS/ZCS topologies |
| Avalanche-rated (UIS) | 285 mJ - Eliminates need for external snubbers in flyback and forward converter primary switches |
| Body diode trr/Qrr | 513 ns / 7.1 μC - Enables reliable operation in half-bridge LLC secondaries without external anti-parallel SiC diodes |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912 |
Applications
| Server Power Supplies | Telecom Rectifiers |
|---|---|
Use Scenario: Primary-side switch in 3.3 kW front-end PFC stage with interleaved boost topology. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 400 VDC bus and 25 A RMS input current. Use Value: 0.051 Ω RDS(on) and 108 nC Qg enable >98.2% efficiency at full load while maintaining <105 °C junction temperature. | Use Scenario: Main switch in 48 V/50 A telecom rectifier with active clamp forward converter. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary side, operating at 200 kHz with zero-voltage switching. Use Value: 513 ns body diode trr and low Qrr reduce cross-conduction loss and EMI generation during dead-time transitions. |
| Solar PV Inverters | Industrial Motor Drives |
Use Scenario: DC-link switch in 5 kW string inverter H-bridge output stage. IC Role / Device Role / Timing Role: High-side leg switch subjected to repetitive 600 V transients and 35 A peak phase current. Use Value: 285 mJ EAS rating ensures survivability during grid fault-induced voltage surges without external clamping. | Use Scenario: Inverter leg switch in 7.5 kW induction heating inverter operating at 100 kHz resonant frequency. IC Role / Device Role / Timing Role: Fast-switching power switch driving series-resonant tank with high di/dt demands. Use Value: 100 V/ns dv/dt immunity and 32 ns fall time support stable operation under 70 A/μs commutation stress without parasitic turn-on. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N60DM6 | 600 V rating, 0.055 Ω RDS(on), 115 nC Qg, D2PAK package | Limited to 600 V bus systems; higher gate charge increases driver loss at >200 kHz | Preferred where PCB space allows surface-mount and 600 V max is sufficient |
| IXFH50N65X2 | 650 V rating, 0.052 Ω RDS(on), 92 nC Qg, TO-247 package | Lower Qg improves high-frequency efficiency but requires larger heatsink footprint | Selected when minimizing switching loss dominates over conduction loss and layout permits TO-247 |
Compared with STW65N60DM6 and IXFH50N65X2, the SIHP054N65E-GE3 offers optimal balance of 650 V rating, low RDS(on), and TO-220AB mechanical compatibility-making it ideal for cost-sensitive, through-hole-based telecom and server power supplies requiring proven avalanche ruggedness.
Availability
SIHP054N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume production.
Supply support for SIHP054N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and ruggedness.
The SIHP054N65E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V server, telecom, and industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for SIHP054N65E-GE3 at 100 °C case temperature?
The SIHP054N65E-GE3 has a continuous drain current rating of 30 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 47 A rating at 25 °C, based on a linear derating factor of 2.5 W/°C and RthJC = 0.4 °C/W. Designers must ensure heatsink design maintains TC ≤ 100 °C to sustain 30 A operation.
Does SIHP054N65E-GE3 support gate drive at 5 V logic level?
No, the SIHP054N65E-GE3 is not a logic-level MOSFET. Its gate-source threshold voltage range is 3.0–5.0 V, but full enhancement and guaranteed 0.051 Ω RDS(on) require VGS = 10 V. Driving it at 5 V results in significantly higher on-resistance and conduction loss; a 10–12 V gate drive rail is required for nominal performance.
What is the significance of the Co(er) parameter for SIHP054N65E-GE3 in power supply design?
The effective output capacitance Co(er) of 115 pF for SIHP054N65E-GE3 directly determines turn-off energy loss (Eoff ≈ ½ × Co(er) × VDS²). At 520 V bus voltage, this yields ~15.6 mJ per switching cycle-critical for optimizing efficiency in high-frequency PFC and resonant converters where capacitive losses dominate.
Is SIHP054N65E-GE3 suitable for use in avalanche mode during normal operation?
The SIHP054N65E-GE3 is rated for single-pulse avalanche energy (EAS) of 285 mJ, confirming ruggedness against transient overvoltage events like inductive kickback. However, it is not designed for repetitive avalanche operation; sustained UIS stress degrades reliability. Circuit protection must limit avalanche to rare fault conditions only.
How does the body diode performance of SIHP054N65E-GE3 compare to discrete fast recovery diodes in bridge configurations?
The SIHP054N65E-GE3 body diode exhibits trr = 513 ns and Qrr = 7.1 μC at 20 A, which is slower and higher-loss than dedicated 650 V fast recovery diodes (e.g., 250 ns, 2.5 μC). It is acceptable for low-frequency freewheeling but not recommended for high-frequency synchronous rectification without careful dead-time optimization to avoid cross-conduction.
SIHP054N65E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-220-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 108 nC @ 20 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3769 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 312W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHP054N65E-GE3 FAQ
1.How can I place an order for SIHP054N65E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHP054N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHP054N65E-GE3 reliable?
The price and inventory of SIHP054N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP054N65E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHP054N65E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP054N65E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHP054N65E-GE3?
SIHP054N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHP054N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHP054N65E-GE3?
For technical support, including SIHP054N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP054N65E-GE3 requirements.
6.How does Aetrix verify that SIHP054N65E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHP054N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP054N65E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHP054N65E-GE3?
All SIHP054N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP054N65E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHP054N65E-GE3 part is unused and in its original packaging.
Return procedure for SIHP054N65E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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