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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP12N60E-BE3

Name: SIHP12N60E-BE3
Brand: Vishay Siliconix
SKU: SIHP12N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP12N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP12N60E-BE3.pdf

Description:: MOSFET N-CH 600V 12A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP12N60E-BE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-efficiency switch-mode power supplies with R_DS(on) = 0.38 Ω at V_GS = 10 V, Q_g = 58 nC, and E_AS = 117 mJ. It serves as a primary-side switching device in telecom rectifiers and PFC stages.

For engineers reviewing the SIHP12N60E-BE3 datasheet, SIHP12N60E-BE3 pinout, SIHP12N60E-BE3 application, or SIHP12N60E-BE3 equivalent, key selection criteria include avalanche ruggedness, low gate charge for ZVS/ZCS compatibility, thermal resistance (R_thJC = 0.85 °C/W), and Pb-free/halogen-free compliance per ordering suffix -BE3.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide thickness to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of 22.04 Ω·nC. Its body diode exhibits t_rr = 350 ns and Q_rr = 4 μC under standardized 100 A/μs dI/dt conditions, supporting hard-switched and resonant topologies.

The device operates with V_GS(th) = 2–4 V, enabling standard 10 V gate drive while maintaining robust noise immunity. Its dV/dt immunity reaches 70 V/ns at T_J = 125 °C, and it is rated for unclamped inductive switching (UIS) up to 117 mJ-critical for flyback and LLC transient resilience.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified systems with 50 % safety margin
R_DS(on) max @ 10 V	0.38 Ω - limits conduction loss to ≤ 5.5 W at 12 A DC, enabling compact heatsinking
Q_g max	58 nC - enables <100 kHz operation with <2 W gate driver loss using 12 V supply
E_AS	117 mJ - withstands single-pulse inductive energy without failure in 480 V bus applications
I_D continuous @ T_C = 100 °C	7.8 A - defines usable current derating for forced-air-cooled 1U server PSUs
R_thJC	0.85 °C/W - allows junction-to-case temperature rise of ≤ 128 °C at 150 W dissipation
t_rr	350 ns - constrains diode recovery-induced voltage overshoot in bridge-leg commutation

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage/clearance from case, and JEDEC-compliant footprint.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 937 pF shapes Miller plateau timing
D (Drain)	High-voltage power terminal	Connected to TO-220 tab; electrically isolated but thermally coupled to heatsink
S (Source)	Power return and reference node	Common node for gate drive return and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	22.04 Ω·nC - reduces combined switching + conduction losses vs. legacy 600 V MOSFETs
Avalanche-rated (UIS)	117 mJ single-pulse - eliminates need for external snubbers in PFC boost inductors
Ultra-low Q_gd/Q_g ratio	22.4 % - minimizes Miller effect, improving dv/dt immunity and gate drive efficiency
Body diode Q_rr	4 μC - lowers reverse recovery loss in synchronous rectifier and half-bridge configurations
Pb-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's "Green" material categorization

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1 kW, 48 V output, active-clamp forward converters. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100 kHz PWM duty cycling. Use Value: R_DS(on) = 0.38 Ω and Q_g = 58 nC enable >94 % efficiency at full load while maintaining <105 °C junction temperature.	Use Scenario: Boost PFC stage in -48 V telecom rectifier modules operating at 65 kHz. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch managing line-frequency ripple and transient overloads. Use Value: E_AS = 117 mJ ensures reliable operation during AC line dips and surge events without desaturation protection.
Industrial Motor Drives	Solar PV Inverters
Use Scenario: Inverter leg switching in 3 kW brushless DC motor drives with IGBT-like bus voltage. IC Role / Device Role / Timing Role: Low-loss, high-reliability main switch in three-phase inverter bridges. Use Value: dV/dt rating of 70 V/ns prevents false turn-on during high dv/dt commutation, reducing gate driver complexity.	Use Scenario: DC-DC stage in string inverters converting 600–1000 V PV array output to intermediate bus. IC Role / Device Role / Timing Role: High-voltage, high-current switch in interleaved boost converters. Use Value: C_oss = 53 pF and Co(tr) = 136 pF minimize capacitive switching loss at 50 kHz, improving MPPT efficiency.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1 kW, 48 V output, active-clamp forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100 kHz PWM duty cycling.

Use Value: R_DS(on) = 0.38 Ω and Q_g = 58 nC enable >94 % efficiency at full load while maintaining <105 °C junction temperature.

Use Scenario: Boost PFC stage in -48 V telecom rectifier modules operating at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch managing line-frequency ripple and transient overloads.

Use Value: E_AS = 117 mJ ensures reliable operation during AC line dips and surge events without desaturation protection.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: Inverter leg switching in 3 kW brushless DC motor drives with IGBT-like bus voltage.

IC Role / Device Role / Timing Role: Low-loss, high-reliability main switch in three-phase inverter bridges.

Use Value: dV/dt rating of 70 V/ns prevents false turn-on during high dv/dt commutation, reducing gate driver complexity.

Use Scenario: DC-DC stage in string inverters converting 600–1000 V PV array output to intermediate bus.

IC Role / Device Role / Timing Role: High-voltage, high-current switch in interleaved boost converters.

Use Value: C_oss = 53 pF and Co(tr) = 136 pF minimize capacitive switching loss at 50 kHz, improving MPPT efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	R_DS(on) = 0.45 Ω, Q_g = 42 nC, E_AS = 100 mJ, TO-220FP package	Lower peak current (IDM = 24 A vs. 27 A); shorter creepage distance due to FP molded body	Prefer when lower gate charge dominates over conduction loss; verify thermal interface for same PCB layout
IXTH12N60L2	R_DS(on) = 0.42 Ω, Q_g = 48 nC, E_AS = 130 mJ, TO-247AC package	Higher avalanche rating but larger footprint; requires different heatsink mounting	Choose for higher reliability margin in critical industrial UPS; accept layout change for improved thermal performance

Compared with STP12NK60ZFP and IXTH12N60L2, SIHP12N60E-BE3 delivers the lowest R_DS(on) × Q_g FOM among TO-220AB-packaged 600 V MOSFETs, balancing conduction efficiency, switching speed, and board-space-constrained thermal design.

Availability

SIHP12N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHP12N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs-including SIHP12N60E-BE3-are engineered for high-efficiency, high-voltage switching in telecom, industrial, and renewable energy systems where ruggedness and consistent parametric performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHP12N60E-BE3 at 100 °C case temperature?

The SIHP12N60E-BE3 has a maximum continuous drain current (I_D) of 7.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 12 A rating at T_C = 25 °C and must be used with R_thJC = 0.85 °C/W to calculate actual junction temperature in system-level thermal design. SIHP12N60E-BE3 supports this current level with adequate heatsinking and airflow.

Does SIHP12N60E-BE3 have avalanche capability, and how is it tested?

Yes, SIHP12N60E-BE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 117 mJ. Testing follows JEDEC standard JESD24-11 using L = 11.6 mH, R_g = 25 Ω, V_DD = 50 V, and I_AS = 4.5 A at T_J = 25 °C. SIHP12N60E-BE3 passes this test without parameter degradation, confirming robustness against inductive energy transients in PFC and flyback circuits.

What is the gate threshold voltage range for SIHP12N60E-BE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHP12N60E-BE3 is 2–4 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while providing noise margin against spurious turn-on. SIHP12N60E-BE3 does not require logic-level drive; its 10 V V_GS specification aligns with industry-standard isolated gate drivers like the UCC27531 or Si823x series.

How does the body diode performance of SIHP12N60E-BE3 compare to standard fast recovery diodes?

SIHP12N60E-BE3 features an integrated body diode with t_rr = 350 ns and Q_rr = 4 μC at I_F = 6 A, dI/dt = 100 A/μs, and T_J = 25 °C-comparable to discrete ultrafast diodes in softness and recovery charge. SIHP12N60E-BE3's diode forward voltage is 1.2 V at I_S = 6 A, making it suitable for freewheeling in non-synchronous topologies where external diode replacement is impractical.

Is SIHP12N60E-BE3 compatible with lead-free reflow soldering processes?

Yes, SIHP12N60E-BE3 is qualified for lead-free soldering with a peak temperature of 300 °C for 10 seconds, per the Soldering Recommendations section. The "-BE3" suffix explicitly denotes Pb-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. SIHP12N60E-BE3 meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly.

SIHP12N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP12N60E-BE3 FAQ

1.How can I place an order for SIHP12N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP12N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP12N60E-BE3 reliable?

The price and inventory of SIHP12N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP12N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP12N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP12N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP12N60E-BE3?

SIHP12N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP12N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP12N60E-BE3?

For technical support, including SIHP12N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP12N60E-BE3 requirements.

6.How does Aetrix verify that SIHP12N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP12N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP12N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP12N60E-BE3?

All SIHP12N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP12N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP12N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHP12N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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