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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP17N60D-GE3

Name: SIHP17N60D-GE3
Brand: Vishay Siliconix
SKU: SIHP17N60D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP17N60D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP17N60D-GE3.pdf

Description:: MOSFET N-CH 600V 17A TO220AB

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Product details

Overview

SIHP17N60D-GE3 from Vishay Siliconix is a 600 V, 17 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.340 Ω (max) at V_GS = 10 V, Q_g = 90 nC (max), and avalanche-rated E_AS = 165.6 mJ - optimized for high-voltage SMPS, motor drives, and induction heating.

For engineers reviewing the SIHP17N60D-GE3 datasheet, SIHP17N60D-GE3 pinout, SIHP17N60D-GE3 application, or SIHP17N60D-GE3 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for fast switching, rugged body diode with t_rr = 950 ns (max), and lead-free/halogen-free compliance per ordering suffix -GE3.

Technical Context

This D-Series MOSFET employs planar stripe technology to achieve low area-specific R_DS(on) and reduced C_iss (1780 pF typ), enabling high efficiency in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers.

The device integrates an avalanche-energy-rated body diode (E_AS = 165.6 mJ) and supports dV/dt immunity up to 24 V/ns at T_J = 125 °C, making it suitable for inductive load switching where unclamped inductive energy must be safely absorbed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in offline 400 V DC bus and universal-input AC/DC converters.
R_DS(on) max @ 25 °C	0.340 Ω @ V_GS = 10 V - enables ≤ 58 W conduction loss at 17 A continuous drain current.
Q_g max	90 nC - determines gate drive power requirement and switching speed in hard-switched 100 kHz–500 kHz designs.
E_AS	165.6 mJ - specifies single-pulse unclamped inductive switching robustness without external snubbers.
t_rr max	950 ns - defines reverse recovery time of integrated body diode, critical for synchronous rectification and freewheeling paths.
R_thJC	0.45 °C/W - enables 277.8 W maximum power dissipation with efficient heatsinking to maintain T_J ≤ 150 °C.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and JEDEC-compliant footprint. Thermal performance optimized via low R_thJC (0.45 °C/W) and metal tab for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; input capacitance C_iss = 1780 pF affects driver sizing.
D	Drain	High-voltage output terminal; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential.
S	Source	Power return path and reference for gate drive; body diode anode; source inductance impacts switching oscillation and dV/dt stress.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	30.6 Ω·nC - reduces combined conduction and switching losses in high-frequency SMPS designs.
Avalanche energy rating (E_AS)	165.6 mJ - eliminates need for external clamping circuits in relay driving, motor commutation, and flyback snubberless operation.
Rugged body diode	t_rr = 950 ns max, Q_rr = 15 μC max - minimizes reverse recovery losses and EMI in bidirectional current paths.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709A - meets environmental requirements for industrial and consumer end equipment.

Applications

Industrial Motor Drives	Induction Heating Systems
Use Scenario: Half-bridge inverter stage driving 1–3 kW induction coils at 20–100 kHz. IC Role / Device Role / Timing Role: High-side/low-side switching element handling repetitive 17 A peak currents and 600 V DC bus transients. Use Value: Low Q_g and fast t_f (60 ns max) minimize dead-time losses; avalanche rating absorbs coil energy during fault conditions.	Use Scenario: Resonant LLC or series-resonant inverter powering domestic or commercial cooktops. IC Role / Device Role / Timing Role: Primary-side power switch operating in ZVS or quasi-resonant mode with high dV/dt stress. Use Value: 24 V/ns dV/dt immunity and low C_oss (140 pF typ) support stable resonant operation and reduce capacitive losses.
Plasma/LCD TV Power Supplies	Battery Chargers (EV/Industrial)
Use Scenario: PFC boost switch and main PWM switch in 200–500 W open-frame AC/DC supplies. IC Role / Device Role / Timing Role: Critical high-voltage switching node managing 400 V DC link and 17 A conduction peaks. Use Value: R_DS(on) = 0.340 Ω limits thermal rise under continuous load; TO-220AB allows cost-effective heatsinking.	Use Scenario: Isolated DC/DC stage in 1–5 kW on-board chargers or industrial battery systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side active clamp switch. Use Value: Body diode V_SD = 1.5 V (max) and I_SD = 17 A enable efficient freewheeling without external diodes.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Half-bridge inverter stage driving 1–3 kW induction coils at 20–100 kHz.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling repetitive 17 A peak currents and 600 V DC bus transients.

Use Value: Low Q_g and fast t_f (60 ns max) minimize dead-time losses; avalanche rating absorbs coil energy during fault conditions.

Use Scenario: Resonant LLC or series-resonant inverter powering domestic or commercial cooktops.

IC Role / Device Role / Timing Role: Primary-side power switch operating in ZVS or quasi-resonant mode with high dV/dt stress.

Use Value: 24 V/ns dV/dt immunity and low C_oss (140 pF typ) support stable resonant operation and reduce capacitive losses.

Plasma/LCD TV Power Supplies

Battery Chargers (EV/Industrial)

Use Scenario: PFC boost switch and main PWM switch in 200–500 W open-frame AC/DC supplies.

IC Role / Device Role / Timing Role: Critical high-voltage switching node managing 400 V DC link and 17 A conduction peaks.

Use Value: R_DS(on) = 0.340 Ω limits thermal rise under continuous load; TO-220AB allows cost-effective heatsinking.

Use Scenario: Isolated DC/DC stage in 1–5 kW on-board chargers or industrial battery systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side active clamp switch.

Use Value: Body diode V_SD = 1.5 V (max) and I_SD = 17 A enable efficient freewheeling without external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60DM6	R_DS(on) = 0.32 Ω (typ), Q_g = 75 nC, TO-220FP package (lower profile, no isolated tab)	Limited to lower-power SMPS due to 20 W lower P_D rating and non-isolated drain tab	Prefer when board height is constrained and heatsink isolation is not required.
IXTH16N60L2	R_DS(on) = 0.36 Ω (max), Q_g = 72 nC, enhanced body diode softness (t_rr = 750 ns max)	Better suited for high-di/dt freewheeling in motor control where diode softness reduces EMI	Choose when reverse recovery noise must be minimized over absolute conduction loss.

Compared with STP18N60DM6 and IXTH16N60L2, the SIHP17N60D-GE3 delivers higher avalanche ruggedness (165.6 mJ vs. ≤120 mJ), superior thermal resistance (R_thJC = 0.45 °C/W), and guaranteed halogen-free compliance - making it preferred for industrial-grade reliability-critical inverters and welders.

Availability

SIHP17N60D-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, induction heating systems, and high-reliability SMPS requiring stable component supply across multi-year production cycles.

Supply support for SIHP17N60D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The D Series Power MOSFETs, including SIHP17N60D-GE3, were engineered for high-efficiency, high-reliability switching in industrial and consumer power conversion - emphasizing low FOM, avalanche ruggedness, and manufacturability in TO-220AB.

FAQ

What is the maximum continuous drain current rating for SIHP17N60D-GE3 at 100 °C case temperature?

The SIHP17N60D-GE3 supports 10.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual PCB layout, heatsink interface, and ambient conditions in the final design. The SIHP17N60D-GE3 datasheet confirms this value under V_GS = 10 V conditions.

Does SIHP17N60D-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHP17N60D-GE3 is fully rated for single-pulse avalanche energy (E_AS = 165.6 mJ), measured per JEDEC JESD24-1 using L = 2.3 mH, R_g = 25 Ω, I_AS = 12 A, and starting T_J = 25 °C. This rating applies to unclamped inductive switching events and is not intended for repetitive operation. The SIHP17N60D-GE3 specification sheet explicitly defines test conditions and limits.

What is the gate threshold voltage range for SIHP17N60D-GE3, and why does it matter for drive circuit design?

The SIHP17N60D-GE3 has a V_GS(th) range of 3–5 V at I_D = 250 μA, meaning reliable turn-on requires ≥10 V gate drive to ensure full enhancement and minimal R_DS(on). This threshold spread impacts noise immunity and startup behavior in low-voltage gate drive schemes. The SIHP17N60D-GE3 datasheet specifies this range under standardized test conditions.

How does the body diode performance of SIHP17N60D-GE3 compare to standard recovery diodes in freewheeling applications?

The SIHP17N60D-GE3 body diode offers V_SD = 1.5 V (max) at I_S = 8 A and t_rr = 950 ns (max), providing lower forward drop than many discrete FRDs but slower recovery than ultrafast diodes. Its Q_rr = 15 μC (max) and I_RRM = 42 A support moderate-frequency freewheeling in motor drives and SMPS. The SIHP17N60D-GE3 characterization data confirms these values at T_J = 25 °C.

Is SIHP17N60D-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHP17N60D-GE3 is qualified for lead-free soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Soldering Recommendations section. The -GE3 suffix explicitly denotes lead-free and halogen-free construction per JEDEC J-STD-020. The SIHP17N60D-GE3 packaging documentation confirms full compliance with RoHS and JEDEC standards.

SIHP17N60D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP17N60D-GE3 FAQ

1.How can I place an order for SIHP17N60D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP17N60D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP17N60D-GE3 reliable?

The price and inventory of SIHP17N60D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP17N60D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHP17N60D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP17N60D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP17N60D-GE3?

SIHP17N60D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP17N60D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP17N60D-GE3?

For technical support, including SIHP17N60D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP17N60D-GE3 requirements.

6.How does Aetrix verify that SIHP17N60D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHP17N60D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP17N60D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHP17N60D-GE3?

All SIHP17N60D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP17N60D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP17N60D-GE3 part is unused and in its original packaging.

Return procedure for SIHP17N60D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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