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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP25N50E-BE3

Name: SIHP25N50E-BE3
Brand: Vishay Siliconix
SKU: SIHP25N50E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP25N50E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP25N50E-BE3.pdf

Description:: N-CHANNEL 500V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHP25N50E-BE3 from Vishay Siliconix is a 500 V, 26 A N-channel enhancement-mode Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.145 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated (E_AS = 273 mJ). It serves as a primary switching device in hard-switched PFC and SMPS stages for ATX power supplies and two-stage LED drivers.

For engineers reviewing the SIHP25N50E-BE3 datasheet, SIHP25N50E-BE3 pinout, SIHP25N50E-BE3 application, or SIHP25N50E-BE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), robust UIS capability, and thermal performance with R_thJC = 0.5 °C/W - critical for high-efficiency, high-reliability AC/DC conversion designs.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage switching with controlled dV/dt immunity (65 V/ns at T_J = 125 °C) and fast body diode recovery (t_rr = 338 ns, Q_rr = 5.3 μC). Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide temperature and drive conditions.

The device integrates a co-packaged body diode rated for 12 A continuous source-drain current and 50 A pulsed operation, with V_SD = 1.2 V at I_S = 16.5 A and T_J = 25 °C. Dynamic parameters - C_iss = 1980 pF, C_oss = 105 pF, C_rss = 8 pF - support predictable switching behavior in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports full bridge and boost PFC operation up to 400 V DC bus with margin
R_DS(on) max	0.145 Ω @ V_GS = 10 V - enables <1.8 W conduction loss at 12 A, reducing heatsink requirements
Q_g max	86 nC - determines gate drive power and switching speed; compatible with standard 1-A peak drivers
E_AS	273 mJ - guarantees unclamped inductive switching survival without external snubbers
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C case-to-junction rise, enabling compact thermal design
t_rr / Q_rr	338 ns / 5.3 μC - minimizes diode reverse recovery losses and EMI in continuous conduction mode

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, JEDEC outline MO-002AC. Thermal pad electrically tied to drain; mechanical mounting via screw or clip to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 1980 pF shapes Miller plateau timing
D (Drain)	High-side power node	Connected to DC bus or transformer primary; electrically bonded to metal tab for thermal conduction
S (Source)	Reference node / return path	Common connection for gate driver return, current sense resistor, and body diode cathode

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	12.4 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–100 kHz PFC stages
Avalanche energy rating (E_AS)	273 mJ - eliminates need for external clamping in inductive load transients and startup surges
Fast body diode with low Q_rr	5.3 μC - reduces cross-conduction loss and voltage overshoot during synchronous rectification or freewheeling
Low C_rss (reverse transfer capacitance)	8 pF - improves gate drive stability and reduces Miller-induced false turn-on in high-dV/dt environments

Applications

ATX Power Supply Boost PFC Stage	Industrial LED Driver Two-Stage Topology
Use Scenario: High-efficiency active PFC front-end operating at 65–100 kHz in 500–1000 W PC silver box supplies. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter; handles full line-frequency rectified input and high DC-link voltage. Use Value: Low R_DS(on) and Q_g enable >98 % PFC efficiency; avalanche rating absorbs line surge events without derating.	Use Scenario: Secondary-stage DC/DC converter in commercial LED drivers requiring high reliability and low EMI. IC Role / Device Role / Timing Role: Primary-side switch in flyback or LLC resonant converter; operates at fixed or variable frequency up to 200 kHz. Use Value: Fast t_rr and low C_oss minimize switching loss and radiated noise; TO-220AB package supports forced-air cooling in enclosed fixtures.
Server PSU Hard-Switched LLC Primary	Industrial Motor Drive Gate Driver Stage
Use Scenario: Primary-side switch in half-bridge LLC resonant converter for 1–3 kW server power supplies. IC Role / Device Role / Timing Role: High-side switching element in resonant tank interface; subjected to high dV/dt and repetitive hard switching. Use Value: 65 V/ns dV/dt rating and low C_rss prevent spurious turn-on; R_thJC = 0.5 °C/W sustains thermal stability under burst-mode loads.	Use Scenario: Isolated gate driver output stage driving IGBTs or SiC MOSFETs in 3-phase inverter modules. IC Role / Device Role / Timing Role: Level-shifting, high-current buffer between digital controller and power device gate. Use Value: Robust 30 V V_GS rating and ±1 μA IGSS support clean gate control; low Q_g enables fast edge rates for precise timing alignment.

ATX Power Supply Boost PFC Stage

Industrial LED Driver Two-Stage Topology

Use Scenario: High-efficiency active PFC front-end operating at 65–100 kHz in 500–1000 W PC silver box supplies.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter; handles full line-frequency rectified input and high DC-link voltage.

Use Value: Low R_DS(on) and Q_g enable >98 % PFC efficiency; avalanche rating absorbs line surge events without derating.

Use Scenario: Secondary-stage DC/DC converter in commercial LED drivers requiring high reliability and low EMI.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or LLC resonant converter; operates at fixed or variable frequency up to 200 kHz.

Use Value: Fast t_rr and low C_oss minimize switching loss and radiated noise; TO-220AB package supports forced-air cooling in enclosed fixtures.

Server PSU Hard-Switched LLC Primary

Industrial Motor Drive Gate Driver Stage

Use Scenario: Primary-side switch in half-bridge LLC resonant converter for 1–3 kW server power supplies.

IC Role / Device Role / Timing Role: High-side switching element in resonant tank interface; subjected to high dV/dt and repetitive hard switching.

Use Value: 65 V/ns dV/dt rating and low C_rss prevent spurious turn-on; R_thJC = 0.5 °C/W sustains thermal stability under burst-mode loads.

Use Scenario: Isolated gate driver output stage driving IGBTs or SiC MOSFETs in 3-phase inverter modules.

IC Role / Device Role / Timing Role: Level-shifting, high-current buffer between digital controller and power device gate.

Use Value: Robust 30 V V_GS rating and ±1 μA IGSS support clean gate control; low Q_g enables fast edge rates for precise timing alignment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24NM50N	R_DS(on) = 0.16 Ω, Q_g = 75 nC, E_AS = 220 mJ, TO-220FP package (lower PD = 100 W)	Lower power handling and no isolated tab; requires heatsink isolation	Preferred where space-constrained layout favors FP variant and lower avalanche stress is expected
IXTH24N50L	R_DS(on) = 0.18 Ω, Q_g = 62 nC, E_AS = 320 mJ, TO-247 package (R_thJC = 0.45 °C/W)	Higher ruggedness and better thermal performance but larger footprint and cost	Selected when maximum UIS margin and 250+ W continuous operation justify TO-247 mechanical and cost trade-offs

Compared with STP24NM50N and IXTH24N50L, SIHP25N50E-BE3 delivers the best balance of low R_DS(on), moderate Q_g, and industry-standard TO-220AB thermal/mechanical compatibility - making it ideal for volume ATX and LED driver platforms where cost, footprint, and proven reliability are jointly prioritized.

Availability

SIHP25N50E-BE3 is available at Aetrix Electronics and suitable for ATX power supplies, industrial LED drivers, server PSUs, and motor drive gate driver stages requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHP25N50E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHP25N50E-BE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-voltage, medium-power switching applications demanding low FOM, strong avalanche capability, and consistent thermal performance across manufacturing sites.

FAQ

What is the maximum continuous drain current rating for SIHP25N50E-BE3 at 100 °C case temperature?

The SIHP25N50E-BE3 has a continuous drain current rating of 16 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 26 A rating at 25 °C, using the linear derating factor of 0.2 W/°C. Designers must ensure heatsink design maintains case temperature ≤100 °C to sustain this current in continuous operation.

Does SIHP25N50E-BE3 support logic-level gate drive?

No, SIHP25N50E-BE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but it is characterized and optimized for V_GS = 10 V operation, with R_DS(on) guaranteed at that level. Driving it with only 5 V may result in incomplete turn-on and excessive conduction loss; a 10 V gate drive is required for full performance and thermal safety.

What does the "-BE3" suffix indicate in SIHP25N50E-BE3?

The "-BE3" suffix in SIHP25N50E-BE3 denotes an alternate manufacturing location within Vishay's qualified global fab network, with identical electrical, thermal, and mechanical specifications to the base SIHP25N50E. It is lead (Pb)-free and halogen-free, compliant with RoHS and Vishay's material categorization standards per document 99912.

Is the body diode of SIHP25N50E-BE3 suitable for synchronous rectification?

The body diode of SIHP25N50E-BE3 is not optimized for synchronous rectification due to its relatively high V_SD (1.2 V) and Q_rr (5.3 μC). While functional in freewheeling roles, it introduces higher conduction and recovery losses compared to dedicated Schottky or GaN-based synchronous solutions. For high-efficiency SR designs, external low-V_F diodes or actively controlled MOSFETs are recommended.

How is the avalanche energy rating of SIHP25N50E-BE3 validated?

The single-pulse avalanche energy rating of 273 mJ for SIHP25N50E-BE3 is validated per JEDEC standard JESD24-1 using unclamped inductive switching (UIS) test conditions: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 4.4 A, starting T_J = 25 °C. This rating applies to non-repetitive transient events and confirms robustness against inductive kickback in PFC and SMPS applications.

SIHP25N50E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1980 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP25N50E-BE3 FAQ

1.How can I place an order for SIHP25N50E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP25N50E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP25N50E-BE3 reliable?

The price and inventory of SIHP25N50E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP25N50E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHP25N50E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP25N50E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP25N50E-BE3?

SIHP25N50E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP25N50E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP25N50E-BE3?

For technical support, including SIHP25N50E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP25N50E-BE3 requirements.

6.How does Aetrix verify that SIHP25N50E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHP25N50E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP25N50E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHP25N50E-BE3?

All SIHP25N50E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP25N50E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP25N50E-BE3 part is unused and in its original packaging.

Return procedure for SIHP25N50E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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