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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHP30N60E-E3

Name: SIHP30N60E-E3
Brand: Vishay Siliconix
SKU: SIHP30N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHP30N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHP30N60E-E3.pdf

Description:: MOSFET N-CH 600V 29A TO220AB

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Product details

Overview

SIHP30N60E-E3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in TO-220AB package, with R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC, and E_AS = 690 mJ. It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverters where low conduction loss and robust avalanche capability are required.

For engineers reviewing the SIHP30N60E-E3 datasheet, SIHP30N60E-E3 pinout, SIHP30N60E-E3 application, or SIHP30N60E-E3 equivalent, key selection criteria include its 600 V V_DS, 0.125 Ω R_DS(on) at 10 V drive, 130 nC total gate charge, TO-220AB thermal performance (R_thJC = 0.5 °C/W), and UIS-rated ruggedness for unclamped inductive switching.

Technical Context

This MOSFET employs planar VDMOS technology optimized for high-voltage power conversion. Its low C_iss (2600 pF) and ultra-low Q_gd/Q_g ratio (39/130 nC) reduce Miller effect and improve hard-switching efficiency. The body diode exhibits t_rr = 605 ns and Q_rr = 15 μC at 25 °C, supporting moderate-frequency freewheeling in bridge topologies.

Designed for operation up to T_J = 150 °C, it delivers 29 A continuous drain current at T_C = 25 °C and derates linearly at 2 W/°C. The 600 V V_DS rating with 0.64 V/°C positive temperature coefficient ensures stable breakdown voltage across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50 % margin for transient overvoltage in PFC and PV inverter applications.
R_DS(on) max	0.125 Ω at V_GS = 10 V - Enables <1.8 W conduction loss at 15 A, suitable for thermally constrained TO-220AB layouts.
Q_g max	130 nC - Determines gate driver power requirement; requires ≥1.3 A peak drive for 100 ns switching transitions.
E_AS	690 mJ - Withstands single-pulse inductive energy without failure, critical for relay/snubberless flyback and motor drive protection.
R_thJC	0.5 °C/W - Allows 250 W dissipation with ≤125 °C junction rise above case, enabling high-power density in heatsink-mounted designs.
t_rr	605 ns - Limits reverse recovery losses in synchronous rectification and half-bridge configurations below 100 kHz.
I_D cont.	29 A at T_C = 25 °C - Defines maximum steady-state current under ideal heatsinking; derates to 18 A at T_C = 100 °C.

Pinout & Package

SIHP30N60E-E3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 250 W power dissipation and 0.5 °C/W junction-to-case thermal resistance. The package features standard lead spacing and mounting hole for mechanical stability under thermal cycling.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 2600 pF dictates gate resistor selection for dV/dt control.
D (Drain)	High-voltage power terminal	Connected to internal die backside; electrically tied to metal tab-requires isolation from heatsink unless system ground referenced.
S (Source)	Power return and reference node	Serves as local ground for gate drive; carries full load current and body diode reverse recovery charge (Q_rr = 15 μC).

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	16.25 Ω·nC - Balances conduction and switching loss for optimal efficiency in 50–100 kHz SMPS designs.
Avalanche energy rating (E_AS)	690 mJ - Eliminates need for external snubbers in inductive load switching, reducing BOM count and layout area.
Ultra-low Q_gd	39 nC - Minimizes Miller plateau duration, improving dv/dt immunity and enabling faster turn-off in high-side configurations.
Low C_iss	2600 pF - Reduces gate drive power consumption and improves high-frequency gate control stability.
Body diode t_rr	605 ns - Enables reliable commutation in LLC resonant converters and asymmetrical half-bridge topologies.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching device handling 400 V DC input, operating at 100–200 kHz with zero-voltage switching assistance. Use Value: 600 V rating provides 50 % overvoltage margin against line surges; 0.125 Ω R_DS(on) limits conduction loss to <2 W at full load.	Use Scenario: DC-link switch in string-level 3 kW microinverter with unipolar PWM modulation. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in H-bridge output stage, requiring low Q_g for efficient 16–20 kHz switching. Use Value: 130 nC Q_g enables gate drive with low-cost 2 A drivers; E_AS rating protects against inductive kick during grid fault conditions.
PFC Boost Converter	Industrial Motor Drive
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for telecom rectifier systems. IC Role / Device Role / Timing Role: Main power switch conducting 20–30 A peak current at 65–100 kHz, with critical demand on low Q_gd for reduced switching loss. Use Value: 39 nC Q_gd minimizes Miller-induced delay, improving power factor correction accuracy and THD performance.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive operating at 8 kHz PWM frequency. IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive unclamped inductive transients during motor stall events. Use Value: 690 mJ E_AS withstands worst-case short-circuit energy without degradation, extending field lifetime beyond 10 years.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching device handling 400 V DC input, operating at 100–200 kHz with zero-voltage switching assistance.

Use Value: 600 V rating provides 50 % overvoltage margin against line surges; 0.125 Ω R_DS(on) limits conduction loss to <2 W at full load.

Use Scenario: DC-link switch in string-level 3 kW microinverter with unipolar PWM modulation.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in H-bridge output stage, requiring low Q_g for efficient 16–20 kHz switching.

Use Value: 130 nC Q_g enables gate drive with low-cost 2 A drivers; E_AS rating protects against inductive kick during grid fault conditions.

PFC Boost Converter

Industrial Motor Drive

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for telecom rectifier systems.

IC Role / Device Role / Timing Role: Main power switch conducting 20–30 A peak current at 65–100 kHz, with critical demand on low Q_gd for reduced switching loss.

Use Value: 39 nC Q_gd minimizes Miller-induced delay, improving power factor correction accuracy and THD performance.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive operating at 8 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive unclamped inductive transients during motor stall events.

Use Value: 690 mJ E_AS withstands worst-case short-circuit energy without degradation, extending field lifetime beyond 10 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NM60ND	600 V, 30 A, R_DS(on) = 0.135 Ω, Q_g = 110 nC, TO-220FP package (non-isolated tab)	Lower Q_g but higher R_DS(on); non-isolated tab requires insulated mounting hardware	Select when gate drive efficiency is prioritized over thermal margin and board-level isolation is already implemented.
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.13 Ω, Q_g = 125 nC, TO-247AC package (higher thermal capacity)	Same voltage/current class but TO-247 offers lower R_thJC (0.45 °C/W); larger footprint and cost	Select when >250 W continuous dissipation or extended lifetime under thermal cycling is required.

Compared with STP30NM60ND and IXFH30N60P, SIHP30N60E-E3 provides superior avalanche ruggedness (690 mJ vs. 520 mJ and 620 mJ) and an isolated TO-220AB tab-critical for simplified heatsink integration in space-constrained server and telecom power supplies.

Availability

SIHP30N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.

Supply support for SIHP30N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The SIHP30N60E-E3 belongs to Vishay's E Series Power MOSFET product line, engineered for high-voltage switching in telecom, server, and renewable energy systems where low FOM, avalanche robustness, and thermal reliability are mandatory.

FAQ

What is the maximum continuous drain current for SIHP30N60E-E3 at 100 °C case temperature?

The SIHP30N60E-E3 supports 18 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated with actual heatsink performance and ambient conditions. The SIHP30N60E-E3 datasheet specifies linear derating from 29 A at 25 °C using a 2 W/°C slope.

Does SIHP30N60E-E3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHP30N60E-E3 is fully rated for single-pulse avalanche energy (E_AS) at 690 mJ, tested per JEDEC JESD24-11 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A. This rating applies to unclamped inductive switching events and is not repetitive-each event must allow full thermal recovery before subsequent stress. The SIHP30N60E-E3 datasheet confirms this value in the Absolute Maximum Ratings table.

What is the gate threshold voltage range for SIHP30N60E-E3, and how does it affect drive circuit design?

The SIHP30N60E-E3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C, with typical value 2.8 V. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement and minimize R_DS(on) variation across production lots and temperature. The SIHP30N60E-E3 requires stable 10–15 V drive to maintain specified 0.125 Ω on-resistance and avoid partial turn-on losses.

Can SIHP30N60E-E3 be used in synchronous rectification applications?

No-SIHP30N60E-E3 is not optimized for synchronous rectification due to its relatively high body diode forward voltage (V_SD = 1.3 V at 15 A) and slow reverse recovery (t_rr = 605 ns). Its design targets high-voltage switching, not low-loss freewheeling. For synchronous rectification, dedicated low-V_F, fast-t_rr MOSFETs like Vishay SiR626DP are recommended instead of SIHP30N60E-E3.

Is the TO-220AB package of SIHP30N60E-E3 electrically isolated, and what are the mounting implications?

Yes, the TO-220AB package used by SIHP30N60E-E3 features an electrically isolated metal tab internally connected to the drain. This allows direct mounting to a grounded heatsink without additional insulation, simplifying thermal design and reducing parasitic inductance. However, PCB layout must ensure no other traces contact the tab, and mounting hardware must not short the tab to adjacent planes. The SIHP30N60E-E3 datasheet confirms this isolation in the package outline diagram.

SIHP30N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHP30N60E-E3 FAQ

1.How can I place an order for SIHP30N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHP30N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHP30N60E-E3 reliable?

The price and inventory of SIHP30N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHP30N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHP30N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHP30N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHP30N60E-E3?

SIHP30N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHP30N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHP30N60E-E3?

For technical support, including SIHP30N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHP30N60E-E3 requirements.

6.How does Aetrix verify that SIHP30N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHP30N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHP30N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHP30N60E-E3?

All SIHP30N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHP30N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHP30N60E-E3 part is unused and in its original packaging.

Return procedure for SIHP30N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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