Vishay Siliconix SIHW30N60E-GE3

Overview

SIHW30N60E-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode power MOSFET in TO-247AD package, featuring R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC, and avalanche-rated E_AS = 690 mJ - optimized for high-efficiency switch-mode power supplies and PFC stages in telecom and server applications.

For engineers reviewing the SIHW30N60E-GE3 datasheet, SIHW30N60E-GE3 pinout, SIHW30N60E-GE3 application, or SIHW30N60E-GE3 equivalent, key selection criteria include its 600 V blocking voltage, low gate charge for reduced switching loss, robust body diode with t_rr = 605 ns, thermal resistance R_thJC = 0.5 °C/W, and lead-free/halogen-free TO-247AD packaging suitable for high-power industrial converters.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized charge balance for low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide drive conditions, while the integral body diode supports synchronous rectification and inductive flyback in hard-switched topologies.

The device is rated for repetitive unclamped inductive switching (UIS) up to 690 mJ and exhibits dV/dt immunity of 70 V/ns, enabling reliable operation in fast-rising drain voltage environments such as resonant LLC and phase-shifted full-bridge converters without spurious turn-on.

Key Specifications

Pinout & Package

TO-247AD package: isolated tab (Drain), vertical mounting, 3-pin through-hole configuration with 20.8–21.46 mm length, 15.77–16.03 mm width, and 19.85–20.11 mm height; drain-connected metal tab enables direct heatsink attachment with thermal interface material.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STW30NM60ND and IXFH30N60P, SIHW30N60E-GE3 delivers superior avalanche ruggedness and lower conduction loss, making it preferred for high-reliability PFC, solar inverters, and industrial welders where unclamped inductive transients are routine.

Availability

SIHW30N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHW30N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The E Series power MOSFETs, including SIHW30N60E-GE3, were engineered for high-efficiency, high-voltage switch-mode power conversion in demanding industrial and infrastructure applications where thermal stability and transient robustness are critical.

FAQ

What is the maximum continuous drain current rating for SIHW30N60E-GE3 at 100 °C case temperature?

The SIHW30N60E-GE3 supports 18 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This rating reflects thermal derating from the 29 A value at 25 °C, based on R_thJC = 0.5 °C/W and maximum T_J = 150 °C. Designers must ensure heatsink design maintains case temperature ≤ 100 °C under full load to sustain this current.

Does SIHW30N60E-GE3 have a fully rated avalanche capability, and what test conditions apply?

Yes, SIHW30N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 690 mJ, tested per V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A, and starting T_J = 25 °C. This rating applies to non-repetitive inductive switching events only and does not imply unlimited repetitive avalanche operation.

What is the typical body diode reverse recovery time (t_rr) of SIHW30N60E-GE3, and how does it affect bridge-leg design?

The SIHW30N60E-GE3 exhibits t_rr = 402–605 ns (typ./max) at T_J = 25 °C, I_F = 15 A, dI/dt = 100 A/μs, and V_R = 20 V. This value sets the minimum dead-time required between high-side and low-side switching in half-bridge configurations to avoid cross-conduction; designers typically allocate ≥ 800 ns dead-time to accommodate process and temperature variation.

Is SIHW30N60E-GE3 compatible with standard TO-247 heatsinks, and what is the thermal interface requirement?

Yes, SIHW30N60E-GE3 uses the industry-standard TO-247AD mechanical outline with isolated drain tab, ensuring compatibility with all commercial TO-247 heatsinks. A thermally conductive interface material (e.g., silicone grease or phase-change pad) is required between the metal tab and heatsink surface to achieve the specified R_thJC = 0.5 °C/W; dry mounting results in >5× higher thermal resistance.

What gate drive voltage range is recommended for reliable operation of SIHW30N60E-GE3?

SIHW30N60E-GE3 specifies V_GS = ±20 V absolute maximum, with recommended operating V_GS = 10 V for full R_DS(on) specification. Gate drive must remain within –5 V to +15 V during normal switching to avoid threshold shift or oxide stress; negative gate bias (–5 V) is advised during high-dv/dt conditions to prevent spurious turn-on.