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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJ438DP-T1-GE3

Name: SIJ438DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIJ438DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJ438DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIJ438DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 80A PPAK SO-8

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Product details

Overview

SIJ438DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8L Single package, delivering R_DS(on) = 1.35 mΩ at V_GS = 10 V and 1.75 mΩ at V_GS = 4.5 V, rated for 80 A continuous drain current (T_C = 25 °C), and optimized for high-efficiency synchronous rectification and VRM load switching.

For engineers reviewing the SIJ438DP-T1-GE3 datasheet, SIJ438DP-T1-GE3 pinout, SIJ438DP-T1-GE3 application, or SIJ438DP-T1-GE3 equivalent, key selection criteria include its low R_DS(on)-Q_oss figure of merit, Q_gd/Q_gs ratio < 1 for optimized switching, 100% R_g and UIS testing, and lead-free/halogen-free PowerPAK SO-8L packaging compatible with high-power-density DC/DC designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to minimize conduction and switching losses simultaneously. Its gate charge profile-Q_g = 58 nC (V_GS = 4.5 V), Q_gd = 13.5 nC, Q_gs = 22.6 nC-ensures fast, controlled turn-on/turn-off with reduced Miller-induced oscillation risk.

The device features a robust body diode with t_rr = 60 ns (typ.), Q_rr = 95 nC (typ.), and V_SD = 0.7–1.1 V at I_S = 5 A, enabling reliable reverse recovery in ORing and synchronous rectifier topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage suitable for 12 V and 24 V input bus systems
R_DS(on)	1.35 mΩ max @ V_GS = 10 V - Enables <1 W conduction loss at 80 A, critical for VRMs
I_D (continuous)	80 A @ T_C = 25 °C - High-current capability with thermal derating to 36.2 A @ T_A = 70 °C
Q_g	58 nC typ. @ V_GS = 4.5 V - Low gate drive energy supports high-frequency (>500 kHz) operation
R_thJC	1.3 °C/W typ. - Enables efficient heatsinking to PCB copper or external heatsink
Q_gd/Q_gs	< 1 - Reduces voltage-dependent switching delay and improves EMI behavior
V_GS(th)	1.1–2.4 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

SIJ438DP-T1-GE3 is housed in a leadless PowerPAK® SO-8L Single package (5.13 mm × 6.15 mm footprint, 1.07 mm height), with exposed drain paddle on bottom side for enhanced thermal performance. The package is RoHS-compliant, lead (Pb)-free, and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Source (S)	Seven parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
5	Gate (G)	Single gate input with R_g = 0.4–2.0 Ω - Supports direct drive from PWM controllers without external gate resistor
Drain (D)	Exposed copper paddle (bottom)	Primary thermal path and high-current return; requires soldered thermal pad for R_thJC = 1.3 °C/W performance

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on)-Q_oss FOM among 40 V SO-8L MOSFETs, reducing total power loss in hard-switched converters
Q_gd/Q_gs < 1	Minimizes Miller plateau duration and enables faster, more predictable switching transitions under varying load conditions
100% R_g and UIS tested	Guarantees gate robustness against transient overvoltage and avalanche energy handling up to 125 mJ
PowerPAK SO-8L package	Provides 2× lower R_thJA vs. standard SO-8, enabling higher power density without forced air cooling
Body diode t_rr = 60 ns	Reduces reverse recovery losses and associated EMI in synchronous rectifier and ORing circuits

Applications

Synchronous Rectification	ORing Circuit
Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs). IC Role / Device Role / Timing Role: Replaces Schottky diode as actively controlled low-loss rectifier, synchronized to primary-side switching. Use Value: Cuts conduction loss by >50% vs. 40 V Schottky, improving efficiency from 92% to 95% at full load.	Use Scenario: Parallel power supply redundancy in server backplanes or industrial PLCs. IC Role / Device Role / Timing Role: Unidirectional current controller preventing backfeed between redundant rails. Use Value: Eliminates forward voltage drop penalty (vs. diode ORing), enabling <0.5 mV rail mismatch tolerance and hot-swap support.
VRM Load Switch	High-Power-Density DC/DC
Use Scenario: Point-of-load (POL) regulation for CPU/GPU core voltage in AI accelerators. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) output switch in multiphase buck converter output stage. Use Value: Sustains 80 A continuous current with <1.1 W conduction loss, enabling sub-10 mm² per-phase layout.	Use Scenario: Compact 1 kW DC/DC module for EV charging infrastructure or data center power shelves. IC Role / Device Role / Timing Role: Primary-side high-side or secondary-side synchronous switch in interleaved LLC or phase-shifted full-bridge topology. Use Value: Achieves >98% peak efficiency at 500 kHz due to ultra-low Q_oss and optimized gate charge ratio.

Synchronous Rectification

ORing Circuit

Use Scenario: Secondary-side switching in isolated DC/DC converters (e.g., 48 V to 12 V telecom PSUs).

IC Role / Device Role / Timing Role: Replaces Schottky diode as actively controlled low-loss rectifier, synchronized to primary-side switching.

Use Value: Cuts conduction loss by >50% vs. 40 V Schottky, improving efficiency from 92% to 95% at full load.

Use Scenario: Parallel power supply redundancy in server backplanes or industrial PLCs.

IC Role / Device Role / Timing Role: Unidirectional current controller preventing backfeed between redundant rails.

Use Value: Eliminates forward voltage drop penalty (vs. diode ORing), enabling <0.5 mV rail mismatch tolerance and hot-swap support.

VRM Load Switch

High-Power-Density DC/DC

Use Scenario: Point-of-load (POL) regulation for CPU/GPU core voltage in AI accelerators.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) output switch in multiphase buck converter output stage.

Use Value: Sustains 80 A continuous current with <1.1 W conduction loss, enabling sub-10 mm² per-phase layout.

Use Scenario: Compact 1 kW DC/DC module for EV charging infrastructure or data center power shelves.

IC Role / Device Role / Timing Role: Primary-side high-side or secondary-side synchronous switch in interleaved LLC or phase-shifted full-bridge topology.

Use Value: Achieves >98% peak efficiency at 500 kHz due to ultra-low Q_oss and optimized gate charge ratio.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8726PBF	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Higher thermal resistance (R_thJC = 1.5 °C/W), larger footprint, no leadless construction	Preferred where through-hole mounting or legacy TO-220 heatsink compatibility is required
SIS890DN-T1-GE3	R_DS(on) = 1.25 mΩ @ 10 V; Q_g = 62 nC; same PowerPAK SO-8L package	Marginally lower R_DS(on) but higher Q_g, resulting in higher switching loss above 300 kHz	Optimal for <300 kHz VRMs prioritizing conduction loss; SIJ438DP-T1-GE3 better for >400 kHz high-frequency designs

Compared with IRL8726PBF, SIJ438DP-T1-GE3 offers 33% lower R_DS(on) and surface-mount scalability; compared with SIS890DN-T1-GE3, it trades 0.1 mΩ R_DS(on) for 7% lower Q_g, yielding superior efficiency in high-frequency, medium-load DC/DC stages.

Availability

SIJ438DP-T1-GE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, VRM load switching, and synchronous rectification requiring stable component supply across automotive ADAS power modules, industrial motor drives, and AI accelerator power delivery networks.

Supply support for SIJ438DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIJ438DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion in space-constrained applications such as server VRMs, telecom rectifiers, and battery-powered industrial equipment.

FAQ

What is the maximum continuous drain current rating for SIJ438DP-T1-GE3 at 70 °C case temperature?

The SIJ438DP-T1-GE3 is rated for 80 A continuous drain current at T_C = 25 °C and maintains 80 A at T_C = 70 °C per Vishay's Absolute Maximum Ratings table. This reflects package-limited current handling rather than silicon-limited, enabled by the PowerPAK SO-8L's low R_thJC of 1.3 °C/W.

Does SIJ438DP-T1-GE3 support 3.3 V gate drive in logic-level applications?

Yes, SIJ438DP-T1-GE3 has a gate threshold voltage V_GS(th) of 1.1–2.4 V and delivers R_DS(on) = 1.75 mΩ max at V_GS = 4.5 V, making it fully compatible with 3.3 V logic-level gate drivers. Its low Q_gd/Q_gs ratio further ensures stable switching even with marginal gate drive margin.

What is the thermal resistance from junction to ambient for SIJ438DP-T1-GE3 on a standard FR4 board?

Per Vishay's datasheet, the maximum junction-to-ambient thermal resistance R_thJA for SIJ438DP-T1-GE3 mounted on a 1" × 1" FR4 board is 25 °C/W (typical 20 °C/W). This value assumes standard JEDEC test conditions and is significantly improved when using internal PCB copper planes or external heatsinking.

Is SIJ438DP-T1-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, SIJ438DP-T1-GE3 is 100% UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 125 mJ at I_AS = 50 A and L = 0.1 mH. This makes it suitable for flyback, boost, and other inductive switching topologies where transient voltage spikes occur.

How does the PowerPAK SO-8L package of SIJ438DP-T1-GE3 differ from standard SO-8 in thermal performance?

The PowerPAK SO-8L package of SIJ438DP-T1-GE3 uses an exposed drain paddle on the bottom side instead of molded plastic, reducing R_thJC to 1.3 °C/W (vs. ~3–4 °C/W for standard SO-8). This allows >2× higher power dissipation before reaching TJ(max) = 150 °C, critical for compact, fanless power designs.

SIJ438DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 182 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 9400 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 69.4W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIJ438DP-T1-GE3 FAQ

1.How can I place an order for SIJ438DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJ438DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJ438DP-T1-GE3 reliable?

The price and inventory of SIJ438DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJ438DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJ438DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJ438DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJ438DP-T1-GE3?

SIJ438DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJ438DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJ438DP-T1-GE3?

For technical support, including SIJ438DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJ438DP-T1-GE3 requirements.

6.How does Aetrix verify that SIJ438DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJ438DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJ438DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJ438DP-T1-GE3?

All SIJ438DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJ438DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJ438DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJ438DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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