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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIJK140E-T1-GE3

Name: SIJK140E-T1-GE3
Brand: Vishay Siliconix
SKU: SIJK140E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIJK140E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: SIJK140E-T1-GE3.pdf

Description:: N-CHANNEL 40 V (D-S) 175 C MOSFE

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Product details

Overview

SIJK140E-T1-GE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen V power MOSFET in a PowerPAK® 10 x 12 package, delivering 795 A continuous drain current at TC = 25 °C, 0.34 mΩ typical R_DS(on) at V_GS = 10 V, and 312 nC total gate charge - optimized for high-current synchronous rectification in server VRMs and industrial DC-DC converters.

For engineers reviewing the SIJK140E-T1-GE3 datasheet, SIJK140E-T1-GE3 pinout, SIJK140E-T1-GE3 application, or SIJK140E-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on), 100% UIS-tested ruggedness, leadless PowerPAK 10×12 thermal performance (R_thJC = 0.21 °C/W), and suitability for OR-ing/hot-swap switch designs requiring >487 A body diode conduction.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench doping to achieve sub-0.5 mΩ R_DS(on) at 40 V rating. Its gate charge profile (Q_g = 312 nC, Q_gd = 70 nC) supports efficient hard-switching in high-frequency (>300 kHz) synchronous buck stages while maintaining low switching loss trade-off.

The device integrates a robust intrinsic body diode with 105 ns typical reverse recovery time (trr) and 310 nC Q_rr, enabling reliable operation in bidirectional current paths. Thermal design leverages the exposed-drain PowerPAK 10×12 footprint for direct heatsink mounting and junction-to-case resistance as low as 0.21 °C/W under steady-state conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/48 V intermediate bus architectures
R_DS(on) max @ V_GS = 10 V	0.47 mΩ - Enables <1.5 W conduction loss at 700 A, critical for high-efficiency server power delivery
I_D continuous @ T_C = 25 °C	795 A - Supports single-device implementation in high-current POL converters without paralleling
Q_g typ.	312 nC - Determines gate drive power requirement; requires ≥2 A peak gate driver for 500 kHz switching
R_thJC max	0.28 °C/W - Enables >500 W power dissipation with modest heatsinking, reducing thermal margin risk
V_GS(th)	2.4–3.5 V - Standard-level threshold compatible with 5 V and 10 V gate drivers; avoids false turn-on in noisy environments
Body diode I_S	487 A - Sustains full-load reverse current during phase-shifted or multiphase dead-time conduction

Pinout & Package

PowerPAK® 10 × 12 is a leadless, bottom-terminal surface-mount package with exposed drain paddle on the underside and gate/source terminals on the top side. The package enables low-inductance, high-current PCB interconnects and direct thermal coupling to heatsinks via the copper drain pad.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main power output terminal / heat transfer path	Exposed copper paddle on bottom side - must be soldered to large thermal pad for R_thJC optimization
G (Gate)	Control input	Single top-side pad - routed with controlled impedance to minimize ringing in high-dI/dt applications
S (Source)	Reference node / return path	Eight top-side pads - parallel connection reduces source inductance and improves current sharing uniformity

Key Features

Feature	Design Value
TrenchFET® Gen V silicon process	Delivers industry-leading R_DS(on) × area efficiency - 0.34 mΩ typical at 10 V drive in 11.68 mm × 9.9 mm footprint
100 % UIS tested	Guarantees avalanche energy handling up to 500 mJ per pulse - eliminates need for external snubbers in inductive load switching
Enhanced power dissipation	536 W max power at T_C = 25 °C - enables compact thermal design in space-constrained server and telecom modules
Standard level gate drive	Operates reliably with 5 V logic-level or 10 V power drivers - avoids cost/complexity of level shifters in multi-phase controllers
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - qualified for automotive and industrial end-equipment without exemptions

Applications

Server VRM Synchronous Rectifier	Industrial 48 V OR-ing Switch
Use Scenario: High-current (≥600 A) point-of-load conversion in AI accelerator racks using multiphase buck topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %. Use Value: 0.34 mΩ R_DS(on) cuts rectifier loss by >60 % vs. prior-gen 0.65 mΩ devices, directly enabling higher power density without forced air cooling.	Use Scenario: Redundant 48 V DC power distribution across dual-input telecom rectifiers or battery banks. IC Role / Device Role / Timing Role: Hot-swap MOSFET controlling power path enablement and reverse-current blocking during insertion/removal. Use Value: 487 A body diode current rating and 100 % UIS testing ensure safe turn-on under load and withstand line transients without failure.
Motor Drive Half-Bridge Leg	Battery Management System (BMS) Fuse Replacement
Use Scenario: 40 V-class BLDC motor control in automated guided vehicles (AGVs) with peak currents >500 A. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in half-bridge configuration driving motor phases with PWM frequencies up to 40 kHz. Use Value: 795 A continuous current rating and 0.21 °C/W R_thJC allow sustained torque delivery without derating, even at 70 °C ambient.	Use Scenario: Solid-state replacement of mechanical fuses in 48 V lithium-ion battery packs for data center UPS systems. IC Role / Device Role / Timing Role: Load switch providing programmable overcurrent protection and fast fault isolation (<100 μs) via gate control. Use Value: 900 A pulsed drain current (I_DM) and 100 A/μs di/dt capability support precise short-circuit detection and millisecond-level shutdown response.

Server VRM Synchronous Rectifier

Industrial 48 V OR-ing Switch

Use Scenario: High-current (≥600 A) point-of-load conversion in AI accelerator racks using multiphase buck topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95 %.

Use Value: 0.34 mΩ R_DS(on) cuts rectifier loss by >60 % vs. prior-gen 0.65 mΩ devices, directly enabling higher power density without forced air cooling.

Use Scenario: Redundant 48 V DC power distribution across dual-input telecom rectifiers or battery banks.

IC Role / Device Role / Timing Role: Hot-swap MOSFET controlling power path enablement and reverse-current blocking during insertion/removal.

Use Value: 487 A body diode current rating and 100 % UIS testing ensure safe turn-on under load and withstand line transients without failure.

Motor Drive Half-Bridge Leg

Battery Management System (BMS) Fuse Replacement

Use Scenario: 40 V-class BLDC motor control in automated guided vehicles (AGVs) with peak currents >500 A.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in half-bridge configuration driving motor phases with PWM frequencies up to 40 kHz.

Use Value: 795 A continuous current rating and 0.21 °C/W R_thJC allow sustained torque delivery without derating, even at 70 °C ambient.

Use Scenario: Solid-state replacement of mechanical fuses in 48 V lithium-ion battery packs for data center UPS systems.

IC Role / Device Role / Timing Role: Load switch providing programmable overcurrent protection and fast fault isolation (<100 μs) via gate control.

Use Value: 900 A pulsed drain current (I_DM) and 100 A/μs di/dt capability support precise short-circuit detection and millisecond-level shutdown response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.5 mΩ @ 10 V (7.4× higher); TO-220AB package; R_thJC = 1.25 °C/W	Limited to ≤120 A continuous; unsuitable for >200 kHz switching due to higher Q_g (120 nC)	Select only for cost-sensitive, low-frequency (<100 kHz), low-current (<100 A) replacements where thermal constraints permit larger heatsinks.
IXFN790N04T2	R_DS(on) = 0.42 mΩ @ 10 V; TO-264 package; R_thJC = 0.25 °C/W; Q_g = 340 nC	Higher gate charge increases driver loss; through-hole mounting limits board-level power density vs. PowerPAK 10×12	Prefer when legacy through-hole assembly is required or when slightly lower R_DS(on) justifies added gate drive complexity and larger footprint.

Compared with IRL1404ZPBF and IXFN790N04T2, the SIJK140E-T1-GE3 delivers the lowest conduction loss per unit area, highest current density in surface-mount form, and best thermal resistance - making it the optimal choice for next-generation high-power-density server, telecom, and industrial power systems where PCB space and thermal headroom are constrained.

Availability

SIJK140E-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, 48 V OR-ing switches, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-reliability deployments.

Supply support for SIJK140E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIJK140E-T1-GE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for ultra-high-current, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where minimal conduction loss and superior thermal performance are mandatory.

FAQ

What is the maximum continuous drain current rating for SIJK140E-T1-GE3 at case temperature of 100 °C?

The SIJK140E-T1-GE3 supports 562 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 10×12 package under sustained high-temperature operation and must be validated against actual board layout and heatsinking in the target application.

Does SIJK140E-T1-GE3 require special rework procedures due to its leadless PowerPAK 10×12 package?

Yes - manual soldering with a soldering iron is not recommended for SIJK140E-T1-GE3. Rework must use controlled-profile reflow equipment per Vishay document 73257. The exposed copper drain paddle cannot guarantee a solder fillet, but adequate bottom-side interconnection is achieved via full-pad reflow, not fillet formation.

Is SIJK140E-T1-GE3 suitable for synchronous rectification in 48 V input DC-DC converters?

Yes - SIJK140E-T1-GE3 is explicitly rated for synchronous rectification applications. Its 40 V V_DS, 0.34 mΩ R_DS(on), and 487 A body diode current make it ideal for secondary-side switching in isolated 48 V-to-12 V or 48 V-to-1 V converters operating at high current and high frequency.

What is the gate-source threshold voltage range for SIJK140E-T1-GE3, and how does it affect drive compatibility?

The SIJK140E-T1-GE3 has a V_GS(th) range of 2.4 V to 3.5 V at I_D = 250 μA. This standard-level threshold ensures compatibility with both 5 V logic drivers and 10 V power drivers, eliminating need for level-shifting circuitry while maintaining noise immunity in electrically noisy power systems.

How is the avalanche capability of SIJK140E-T1-GE3 verified, and what does it mean for system reliability?

The SIJK140E-T1-GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC standards, with rated single-pulse avalanche energy of 500 mJ. This verification ensures robustness against inductive kickback in motor drives and hot-swap events, reducing need for external protection components and improving field reliability.

SIJK140E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Ta), 795A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.47mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 470 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 18510 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 17W (Ta), 536W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIJK140E-T1-GE3 FAQ

1.How can I place an order for SIJK140E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIJK140E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIJK140E-T1-GE3 reliable?

The price and inventory of SIJK140E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIJK140E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIJK140E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIJK140E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIJK140E-T1-GE3?

SIJK140E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIJK140E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIJK140E-T1-GE3?

For technical support, including SIJK140E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIJK140E-T1-GE3 requirements.

6.How does Aetrix verify that SIJK140E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIJK140E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIJK140E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIJK140E-T1-GE3?

All SIJK140E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIJK140E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIJK140E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIJK140E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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