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Vishay Siliconix SIR104DP-T1-RE3
- Part No.:
- SIR104DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR104DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 100V 18.3A/79A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,178
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Product details
Overview
SIR104DP-T1-RE3 from Vishay Siliconix is an N-channel 100 V, 79 A (TC = 25 °C) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, featuring RDS(on) = 6.4 mΩ at VGS = 10 V and Qg = 43 nC (typ.) at VGS = 7.5 V. It delivers low RDS(on)–Qoss figure-of-merit for high-efficiency synchronous rectification in DC/DC converters and primary-side switching in industrial power supplies.
For engineers reviewing the SIR104DP-T1-RE3 datasheet, SIR104DP-T1-RE3 pinout, SIR104DP-T1-RE3 application, or SIR104DP-T1-RE3 equivalent, this page provides verified thermal resistance (RthJC = 1.25 °C/W max), avalanche energy rating (EAS = 61 mJ), body diode recovery (trr = 57 ns typ.), gate charge profile, and PowerPAK SO-8 land pattern compatibility with standard SO-8 footprints.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon architecture optimized for low conduction loss and fast switching in hard-switched and synchronous rectifier topologies. Its 100 % Rg and UIS tested construction ensures robustness under transient overcurrent and voltage stress.
The device integrates a low-VSD body diode (0.75 V typ. at IS = 5 A) with trr = 57 ns and Qrr = 123 nC, enabling efficient reverse recovery in bidirectional current paths. Thermal design leverages the exposed drain pad of the leadless PowerPAK SO-8 for direct board-level heat sinking, achieving RthJC = 1.25 °C/W max and RthJA = 23 °C/W max (t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for primary-side switch or high-side load switch in 48 V industrial systems. |
| RDS(on) max @ VGS = 10 V | 6.4 mΩ - Enables <1.5 W conduction loss at 60 A continuous drain current under thermal derating. |
| Qg typ. @ VGS = 7.5 V | 43 nC - Supports efficient gate drive with low-power controllers in 300–500 kHz DC/DC converters. |
| ID continuous @ TC = 25 °C | 79 A - High-current capability suitable for motor drive half-bridges and battery protection circuits. |
| EAS | 61 mJ - Confirmed single-pulse avalanche energy rating for reliable operation during inductive turn-off transients. |
| RthJC max | 1.25 °C/W - Enables high-power dissipation (>64 W at TC = 70 °C) with minimal junction-to-case temperature rise. |
| trr typ. | 57 ns - Fast body diode recovery reduces switching losses and EMI in synchronous buck and LLC resonant converters. |
Pinout & Package
PowerPAK® SO-8 single-channel package: 5.15 mm × 6.15 mm footprint, 1.04 mm height, leadless construction with exposed copper drain pad on bottom side. Compatible with standard SO-8 PCB land patterns; extended drain area improves thermal coupling to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-frequency switching. |
| 5, 6, 7, 8 | Drain (D) | Eight-terminal drain connection including large bottom-side exposed pad for low-impedance thermal and electrical path to PCB ground plane. |
| G (Gate) | Gate (G) | Single gate terminal (Pin 1 top view per datasheet) enables standard gate driver interface with controlled Miller capacitance (Crss = 18 pF). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on)–Qg FOM (≤ 275 Ω·nC) for reduced total switching + conduction loss in 300–1000 kHz applications. |
| 100 % Rg and UIS tested | Ensures gate resistance consistency (0.3–1.5 Ω) and guaranteed ruggedness against unclamped inductive switching stress. |
| Low RDS(on)–Qoss FOM | Optimized for ZVS/ZCS soft-switching topologies where output charge (Qoss = 49 pC) directly impacts dead-time loss. |
| Exposed drain thermal pad | Enables direct thermal path to PCB with RthJC = 1.25 °C/W max-equivalent to DPAK performance in SO-8 footprint. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc. 99912. |
Applications
| Server VRM Synchronous Rectifier | Industrial DC/DC Primary Switch |
|---|---|
Use Scenario: High-current, high-frequency (500–800 kHz) buck converter in 12 V input server power supply delivering up to 120 A to CPU/GPU rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to minimize conduction loss and improve efficiency above 90 %. Use Value: 6.4 mΩ RDS(on) reduces I²R loss by >65 % vs. typical 20 mΩ alternatives at 60 A, directly improving thermal margin and power density. |
Use Scenario: Primary-side switch in isolated 48 V–12 V industrial DC/DC converter operating at 300 kHz with 100 V bus transients. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in active-clamp forward or half-bridge topology. Use Value: 100 V VDS rating with 61 mJ EAS withstands 120 V surge events without failure, eliminating need for external clamping. |
| Battery Protection Load Switch | BLDC Motor Drive Half-Bridge |
Use Scenario: Bidirectional load switch in 48 V Li-ion battery pack management system handling charge/discharge currents up to 80 A. IC Role / Device Role / Timing Role: Main power path switch with integrated body diode supporting reverse current during cell balancing or regenerative braking. Use Value: 90 A continuous source-drain current (IS) and 57 ns trr enable low-loss reverse conduction without external diode, reducing BOM count and footprint. |
Use Scenario: High-side or low-side switch in three-phase BLDC inverter for industrial pumps or fans rated at 1–3 kW. IC Role / Device Role / Timing Role: Power stage transistor in 60–100 kHz PWM-driven half-bridge leg, requiring fast turn-on/off and low gate charge. Use Value: 43 nC Qg (at 7.5 V) allows full enhancement using low-cost 1-A gate drivers, minimizing drive-stage power consumption and layout complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR108DP-T1-RE3 | Higher VDS = 150 V, higher RDS(on) = 9.5 mΩ @ 10 V, same PowerPAK SO-8 package and pinout. | Better suited for 96 V or 110 V nominal bus systems; trade-off is 48 % higher conduction loss at same current. | Select when system requires >120 V transient immunity and can accept higher RDS(on). |
| SiR870DP-T1-GE3 | Lower VDS = 80 V, lower RDS(on) = 4.0 mΩ @ 10 V, identical package and pinout. | Optimized for 24–48 V systems; not rated for 100 V bus operation-risk of avalanche failure under overvoltage. | Select only for 60 V max applications where lowest possible conduction loss is critical and voltage headroom is sufficient. |
Compared with SiR108DP-T1-RE3 and SiR870DP-T1-GE3, the SIR104DP-T1-RE3 uniquely balances 100 V rating, 6.4 mΩ on-resistance, and 43 nC gate charge-making it the optimal choice for 48 V industrial DC/DC converters requiring both voltage margin and efficiency.
Availability
SIR104DP-T1-RE3 is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for SIR104DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.
The SIR104DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered for high-current, high-frequency switching in space-constrained industrial and computing power systems.
FAQ
What is the maximum continuous drain current rating for SIR104DP-T1-RE3 at 70 °C case temperature?
The SIR104DP-T1-RE3 supports 63.2 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 79 A rating at TC = 25 °C and must be validated against actual PCB thermal design using the RthJC = 1.25 °C/W max parameter. The SIR104DP-T1-RE3 datasheet confirms this rating is valid for steady-state operation with proper heatsinking.
Does SIR104DP-T1-RE3 have a qualified avalanche rating, and what is its value?
Yes, the SIR104DP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and specifies a single-pulse avalanche energy rating of EAS = 61 mJ at L = 0.1 mH. This value is measured under standardized test conditions and guarantees safe operation during inductive turn-off transients without requiring external snubbers. The SIR104DP-T1-RE3 datasheet lists this in the Absolute Maximum Ratings section.
Can SIR104DP-T1-RE3 be mounted on a standard SO-8 PCB land pattern?
Yes, the SIR104DP-T1-RE3 in PowerPAK® SO-8 package uses the same 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, allowing drop-in replacement on existing layouts. However, its exposed drain pad requires extended copper area beneath Pins 5–8 for optimal thermal performance. The SIR104DP-T1-RE3 application note AN821 confirms compatibility but recommends minimum pad patterns from doc. 72599 for full thermal benefit.
What is the typical body diode forward voltage of SIR104DP-T1-RE3, and how does it affect synchronous rectification?
The SIR104DP-T1-RE3 exhibits a typical body diode forward voltage (VSD) of 0.75 V at IS = 5 A and TJ = 25 °C. This low VSD, combined with trr = 57 ns and Qrr = 123 nC, minimizes reverse recovery loss and conduction loss during freewheeling phases in synchronous rectifiers. In the SIR104DP-T1-RE3, this enables >2 % efficiency gain over higher-VSD alternatives in 500 kHz buck converters.
Is SIR104DP-T1-RE3 lead (Pb)-free and RoHS-compliant?
Yes, the SIR104DP-T1-RE3 is lead (Pb)-free and halogen-free, fully compliant with the EU RoHS Directive 2011/65/EU. Vishay documents this compliance in the "Material categorization" section of the SIR104DP-T1-RE3 datasheet (doc. 75837) and references compliance definitions in doc. 99912. The "-RE3" suffix explicitly denotes RoHS-compliant, lead-free packaging.
SIR104DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 18.3A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4230 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 100W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR104DP-T1-RE3 FAQ
1.How can I place an order for SIR104DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR104DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR104DP-T1-RE3 reliable?
The price and inventory of SIR104DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR104DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIR104DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR104DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR104DP-T1-RE3?
SIR104DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR104DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR104DP-T1-RE3?
For technical support, including SIR104DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR104DP-T1-RE3 requirements.
6.How does Aetrix verify that SIR104DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIR104DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR104DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIR104DP-T1-RE3?
All SIR104DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR104DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR104DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIR104DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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