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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR122DP-T1-RE3

Name: SIR122DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR122DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR122DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR122DP-T1-RE3.pdf

Description:: MOSFET N-CH 80V 16.7A/59.6A PPAK

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Product details

Overview

SIR122DP-T1-RE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 7.4 mΩ at V_GS = 10 V, Q_g = 22 nC (typ.), and continuous drain current I_D = 59.6 A (T_C = 25 °C). It serves as a high-efficiency primary-side switch or synchronous rectifier in DC/DC converters and OR-ing circuits.

For engineers reviewing the SIR122DP-T1-RE3 datasheet, SIR122DP-T1-RE3 pinout, SIR122DP-T1-RE3 application, or SIR122DP-T1-RE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS tested reliability, thermal performance matching DPAK (R_thJC = 1.5 °C/W max), and compatibility with standard SO-8 land patterns.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for switching efficiency in high-frequency power conversion. Its gate charge profile (Q_g = 22 nC typ. at V_GS = 7.5 V) and low output charge (Q_oss = 33 nC) support fast turn-on/turn-off with minimal switching loss. The device features fully rated avalanche capability (I_AS = 20 A, E_AS = 20 mJ) and robust body diode performance (t_rr = 42 ns typ., Q_rr = 52 nC).

Thermally, it leverages the PowerPAK SO-8's exposed-drain copper pad to achieve R_thJC = 1.5 °C/W (max) and R_thJA = 24 °C/W (max, t ≤ 10 s), enabling high-power density designs without external heatsinking in many applications. The package maintains SO-8 footprint compatibility while supporting larger die area than standard SO-8.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; suitable for 48 V input bus and 60 V transient protection in industrial and telecom power supplies.
R_DS(on) max @ V_GS = 10 V	7.4 mΩ - Enables <1.5 W conduction loss at 50 A, critical for high-current synchronous rectification and primary-side switching.
Q_g typ. @ V_GS = 7.5 V	22 nC - Low gate charge reduces driver power demand and supports >1 MHz switching in resonant topologies.
I_D continuous @ T_C = 25 °C	59.6 A - High current rating allows single-device implementation in 100–200 W DC/DC stages without paralleling.
R_thJC max	1.9 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to PCB copper or heatsink, matching DPAK-level cooling.
Q_oss	33 nC - Low output charge minimizes hard-switching loss and improves light-load efficiency in flyback and LLC converters.
V_GS(th)	2.0–3.8 V - Gate threshold ensures reliable enhancement-mode operation with standard 3.3 V or 5 V logic-level drivers.

Pinout & Package

Package: PowerPAK® SO-8 (leadless, SO-8 footprint, exposed drain pad on bottom surface; dimensions: 6.15 mm × 5.15 mm × 1.04 mm).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
5, 6, 7, 8	Drain (D)	Eight-terminal drain configuration maximizes copper area for thermal dissipation and low R_DS(on) path.
G (pin 1 of top view, labeled "G")	Gate (G)	Single gate terminal with R_g = 0.3–1.5 Ω; designed for low-noise, stable drive with minimal ringing.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers best-in-class R_DS(on)–Q_g and R_DS(on)–Q_oss FOM for high-frequency, high-efficiency switching.
100% R_g and UIS tested	Ensures gate robustness against overvoltage and ruggedness under unclamped inductive switching stress.
PowerPAK SO-8 package	SO-8 footprint compatibility enables drop-in replacement; exposed drain pad achieves DPAK-equivalent thermal performance.
Low Q_rr and t_rr	Body diode Q_rr = 52 nC (typ.) and t_rr = 42 ns (typ.) reduce reverse recovery loss in synchronous rectification and OR-ing.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C material compliance requirements.

Applications

Server VRM Output Stage	Industrial 48 V DC/DC Converter
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 500 kHz–1 MHz with precise dead-time control. Use Value: 7.4 mΩ R_DS(on) and 22 nC Q_g minimize conduction and switching losses, improving full-load efficiency by ≥0.8% vs. legacy SO-8 MOSFETs.	Use Scenario: Isolated half-bridge DC/DC module converting 48 V input to 12 V/24 V output for PLC and motor drive control. IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or LLC resonant topology. Use Value: 80 V V_DS rating and 20 mJ E_AS withstand 100 V transients; low Q_oss enables ZVS operation down to 20% load.
Telecom OR-ing Circuit	Battery Protection Switch
Use Scenario: Redundant 54 V power supply backplane where two inputs feed a common bus via ideal diode control. IC Role / Device Role / Timing Role: N-channel MOSFET configured as active OR-ing switch with external gate driver and current sensing. Use Value: Low V_SD (0.76 V typ. at 5 A) and fast t_rr ensure <100 ns switchover time and <0.5 W dissipation per device at 40 A.	Use Scenario: Load switch between Li-ion battery pack (up to 42 V) and system load in portable medical or test equipment. IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO with overcurrent and thermal shutdown. Use Value: 59.6 A I_D rating supports 30 A continuous load; R_thJC = 1.5 °C/W enables operation at 70 °C ambient without derating.

Server VRM Output Stage

Industrial 48 V DC/DC Converter

Use Scenario: High-current, multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 7.4 mΩ R_DS(on) and 22 nC Q_g minimize conduction and switching losses, improving full-load efficiency by ≥0.8% vs. legacy SO-8 MOSFETs.

Use Scenario: Isolated half-bridge DC/DC module converting 48 V input to 12 V/24 V output for PLC and motor drive control.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or LLC resonant topology.

Use Value: 80 V V_DS rating and 20 mJ E_AS withstand 100 V transients; low Q_oss enables ZVS operation down to 20% load.

Telecom OR-ing Circuit

Battery Protection Switch

Use Scenario: Redundant 54 V power supply backplane where two inputs feed a common bus via ideal diode control.

IC Role / Device Role / Timing Role: N-channel MOSFET configured as active OR-ing switch with external gate driver and current sensing.

Use Value: Low V_SD (0.76 V typ. at 5 A) and fast t_rr ensure <100 ns switchover time and <0.5 W dissipation per device at 40 A.

Use Scenario: Load switch between Li-ion battery pack (up to 42 V) and system load in portable medical or test equipment.

IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO with overcurrent and thermal shutdown.

Use Value: 59.6 A I_D rating supports 30 A continuous load; R_thJC = 1.5 °C/W enables operation at 70 °C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR120DP-T1-RE3	Same PowerPAK SO-8 package; lower V_DS = 60 V, higher R_DS(on) = 8.2 mΩ @ 10 V, lower I_D = 55.5 A.	Not suitable for 48 V bus with >60 V transients; better for 24 V systems with tighter space constraints.	Select SiR120DP-T1-RE3 only if 60 V rating suffices and cost sensitivity outweighs efficiency gain from lower R_DS(on).
IRF7470PBF	Standard SO-8 package; same V_DS = 80 V but higher R_DS(on) = 10.5 mΩ @ 10 V, higher R_thJA = 62.5 °C/W, no UIS testing.	Limited to lower-power (<50 W), lower-frequency (<200 kHz) applications due to thermal and switching limitations.	Choose IRF7470PBF only for legacy SO-8 board reuse where thermal margin exists and efficiency is secondary.

Compared with SiR120DP-T1-RE3, SIR122DP-T1-RE3 offers higher voltage margin and lower conduction loss for 48 V systems; versus IRF7470PBF, it delivers 30% lower R_DS(on), 4× better thermal resistance, and proven UIS ruggedness-enabling smaller heatsinks, higher frequency operation, and improved system reliability.

Availability

SIR122DP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC/DC converters, and telecom OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for SIR122DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIR122DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK SO-8 family, engineered for high-efficiency, high-density power conversion in computing, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current rating for SIR122DP-T1-RE3 at case temperature of 70 °C?

The maximum continuous drain current for SIR122DP-T1-RE3 is 47.7 A when the case temperature (T_C) is maintained at 70 °C. This rating reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures and is specified in the Absolute Maximum Ratings table. Designers must ensure adequate PCB copper area or heatsinking to sustain this current without exceeding the 150 °C maximum junction temperature. SIR122DP-T1-RE3 thermal performance is validated per Vishay document S18-0775-Rev. A.

Does SIR122DP-T1-RE3 support gate drive from a 5 V microcontroller without level shifting?

Yes, SIR122DP-T1-RE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 3.8 V, making it compatible with standard 5 V logic-level gate drivers. At V_GS = 5 V, the device achieves R_DS(on) ≈ 0.0085 Ω (interpolated from datasheet curves), sufficient for most medium-power applications. However, for lowest conduction loss, V_GS = 10 V is recommended. SIR122DP-T1-RE3 gate drive characteristics are confirmed in the "Static" section of Vishay document 76834.

How does the PowerPAK SO-8 package of SIR122DP-T1-RE3 improve thermal performance over standard SO-8?

The PowerPAK SO-8 package of SIR122DP-T1-RE3 exposes the drain pad on the bottom surface, creating a direct low-resistance thermal path to the PCB. This yields R_thJC = 1.5 °C/W (max), matching DPAK performance-versus ~16 °C/W for standard SO-8. As a result, SIR122DP-T1-RE3 operates ~40 °C cooler than an equivalently rated SO-8 MOSFET at 2.7 W dissipation. This is documented in Vishay Application Note AN821.

Is SIR122DP-T1-RE3 suitable for synchronous rectification in a 1 MHz LLC resonant converter?

Yes, SIR122DP-T1-RE3 is well-suited for synchronous rectification at 1 MHz due to its low Q_g = 22 nC (typ. at V_GS = 7.5 V), low Q_oss = 33 nC, and fast body diode t_rr = 42 ns (typ.). These parameters minimize switching loss and enable zero-voltage switching (ZVS) during turn-on. The device's 100% UIS testing also ensures robustness against voltage spikes during resonance. Confirmed in Vishay S18-0775-Rev. A, pages 2–3.

What is the avalanche energy rating for SIR122DP-T1-RE3, and how is it tested?

SIR122DP-T1-RE3 is rated for single-pulse avalanche energy (E_AS) of 20 mJ with L = 0.1 mH, and single-pulse avalanche current (I_AS) of 20 A. These ratings are verified per JEDEC standard JESD24-1 using unclamped inductive switching (UIS) test conditions. All units undergo 100% UIS testing in production, ensuring ruggedness in inductive load switching and fault conditions. Details are in the Absolute Maximum Ratings table of Vishay document 76834.

SIR122DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 16.7A (Ta), 59.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 5.2W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR122DP-T1-RE3 FAQ

1.How can I place an order for SIR122DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR122DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR122DP-T1-RE3 reliable?

The price and inventory of SIR122DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR122DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR122DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR122DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR122DP-T1-RE3?

SIR122DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR122DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR122DP-T1-RE3?

For technical support, including SIR122DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR122DP-T1-RE3 requirements.

6.How does Aetrix verify that SIR122DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR122DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR122DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR122DP-T1-RE3?

All SIR122DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR122DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR122DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR122DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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