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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR188LDP-T1-RE3

Name: SIR188LDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR188LDP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR188LDP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR188LDP-T1-RE3.pdf

Description:: N-CHANNEL 60-V (D-S) MOSFET POWE

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Product details

Overview

SIR188LDP-T1-RE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 3.75 mΩ at V_GS = 10 V and 5.2 mΩ at V_GS = 4.5 V, with 93.6 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIR188LDP-T1-RE3 datasheet, SIR188LDP-T1-RE3 pinout, SIR188LDP-T1-RE3 application, or SIR188LDP-T1-RE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (34.6 nC typical total gate charge), 1.6 °C/W junction-to-case thermal resistance, and validated 100 % UIS and R_g testing - critical for robust motor drive and high-frequency converter designs.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology, enabling ultra-low on-resistance while maintaining fast switching dynamics: t_d(on) = 11 ns and t_d(off) = 26 ns at V_GEN = 10 V, R_g = 1 Ω. Its body diode exhibits t_rr = 34 ns and Q_rr = 28 nC, supporting efficient hard-switched and synchronous rectifier operation.

The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side, delivering DPAK-equivalent thermal performance (R_thJC = 1.6 °C/W max) within a standard SO-8 footprint. It is lead-free and halogen-free, qualified per JEDEC J-STD-020 reflow profile with peak temperature of 255 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for primary-side switch or synchronous rectifier in 48 V input systems
R_DS(on) @ V_GS = 10 V	3.75 mΩ max - Enables <1 W conduction loss at 50 A, critical for high-current DC/DC output stages
R_DS(on) @ V_GS = 4.5 V	5.2 mΩ max - Ensures stable operation with 5 V gate drivers in logic-level control applications
Q_g typ.	34.6 nC - Low gate charge supports >1 MHz switching in resonant converters without excessive driver loss
I_D continuous (T_C = 25 °C)	93.6 A - Supports high-power motor drives and server VRMs with minimal parallel devices
R_thJC max.	1.9 °C/W - Enables direct thermal coupling to heatsink or PCB copper, reducing die temperature rise under load
Q_rr	28 nC - Minimizes reverse recovery loss and EMI in synchronous buck topologies

Pinout & Package

Package: PowerPAK® SO-8 (leadless, single-channel), 5.15 mm × 6.15 mm footprint, 1.04 mm height, with exposed drain pad on bottom side for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5	Gate (G)	Single gate input with R_g = 0.85 Ω typical - enables stable gate drive with minimal external series resistance
6, 7, 8	Drain (D)	Three large-area drain terminals connected to bottom-exposed copper pad - primary thermal and current path to PCB

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on) × Q_oss FOM in its class - reduces switching loss in high-frequency DC/DC converters
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress
PowerPAK® SO-8 package	Provides DPAK-level thermal performance (1.6 °C/W R_thJC) in SO-8 footprint - eliminates need for larger packages or heatsinks
Low Q_gd/Q_g ratio	Q_gd = 3.7 nC / Q_g = 34.6 nC ≈ 10.7 % - improves Miller immunity and enables cleaner turn-off in hard-switched topologies
Body diode t_rr = 34 ns	Reduces shoot-through risk and conduction loss during dead-time in synchronous rectification

Applications

Synchronous Rectification	Primary-Side Switch
Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., LLC, forward) to replace Schottky diodes. IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-synchronized gate signals. Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky diode at 30 A, improving efficiency from 92 % to 95 % in 12 V output rails.	Use Scenario: High-current primary switch in non-isolated buck converters for telecom and server POL applications. IC Role / Device Role / Timing Role: Main power switch handling up to 93.6 A continuous current with 60 V blocking capability. Use Value: Enables single-device 1 kW buck stage at 48 V input with <0.8 W conduction loss, eliminating paralleling complexity.
DC/DC Converter	Motor Drive Switch
Use Scenario: High-side or low-side switch in multiphase buck regulators for CPU/GPU VRMs. IC Role / Device Role / Timing Role: Power stage MOSFET in 300–600 kHz multi-phase topology, requiring low Q_g and tight R_DS(on) matching. Use Value: Achieves <1.2 mΩ effective on-resistance per phase at 100 °C junction, supporting >300 A total output with <15 mV droop.	Use Scenario: Half-bridge leg switch in 24–48 V BLDC motor controllers for industrial automation and e-mobility. IC Role / Device Role / Timing Role: High-current, high-dV/dt capable N-channel MOSFET with robust body diode for freewheeling. Use Value: Withstands 40 A continuous motor phase current and 300 A pulsed surge (I_DM), reducing thermal margin requirements by 18 °C vs. SO-8 alternatives.

Synchronous Rectification

Primary-Side Switch

Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., LLC, forward) to replace Schottky diodes.

IC Role / Device Role / Timing Role: N-channel power MOSFET operating in synchronous rectifier mode, driven by transformer-coupled or controller-synchronized gate signals.

Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky diode at 30 A, improving efficiency from 92 % to 95 % in 12 V output rails.

Use Scenario: High-current primary switch in non-isolated buck converters for telecom and server POL applications.

IC Role / Device Role / Timing Role: Main power switch handling up to 93.6 A continuous current with 60 V blocking capability.

Use Value: Enables single-device 1 kW buck stage at 48 V input with <0.8 W conduction loss, eliminating paralleling complexity.

DC/DC Converter

Motor Drive Switch

Use Scenario: High-side or low-side switch in multiphase buck regulators for CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Power stage MOSFET in 300–600 kHz multi-phase topology, requiring low Q_g and tight R_DS(on) matching.

Use Value: Achieves <1.2 mΩ effective on-resistance per phase at 100 °C junction, supporting >300 A total output with <15 mV droop.

Use Scenario: Half-bridge leg switch in 24–48 V BLDC motor controllers for industrial automation and e-mobility.

IC Role / Device Role / Timing Role: High-current, high-dV/dt capable N-channel MOSFET with robust body diode for freewheeling.

Use Value: Withstands 40 A continuous motor phase current and 300 A pulsed surge (I_DM), reducing thermal margin requirements by 18 °C vs. SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR178LDP-T1-RE3	R_DS(on) = 4.3 mΩ @ 10 V; Q_g = 29.5 nC; lower R_DS(on) × Q_g FOM but 5.5 mΩ @ 4.5 V	Better for high-frequency (>1 MHz) converters where gate charge dominates loss; less suitable for 5 V gate drive	Select when optimizing for switching loss over conduction loss and gate drive voltage ≥10 V is available
IRF7480TRPBF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 42 nC; SO-8 (leaded) package with R_thJC = 3.0 °C/W	Higher thermal resistance limits power density; higher Q_g increases driver loss at high frequency	Choose only if legacy SO-8 land pattern reuse is mandatory and thermal headroom ≥25 °C exists

Compared with SiR178LDP-T1-RE3, SIR188LDP-T1-RE3 trades slightly higher Q_g for superior 4.5 V drive capability and tighter R_DS(on) distribution; versus IRF7480TRPBF, it delivers 47 % lower junction-to-case thermal resistance and 18 % lower R_DS(on), enabling higher current density in space-constrained motor and VRM designs.

Availability

SIR188LDP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, motor drive inverters, and synchronous rectification circuits requiring stable component supply, RoHS-compliant packaging, and production-ready lead-free assembly compatibility.

Supply support for SIR188LDP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal optimization.

The SIR188LDP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency power conversion in data center, industrial, and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current rating for SIR188LDP-T1-RE3 at 70 °C case temperature?

The SIR188LDP-T1-RE3 supports 75 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8 package under sustained power dissipation, and must be verified against actual board layout and copper area in the final design. The SIR188LDP-T1-RE3 datasheet confirms this value under steady-state conditions with proper heatsinking.

Does SIR188LDP-T1-RE3 support 5 V gate drive in practical applications?

Yes, the SIR188LDP-T1-RE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 5.2 mΩ max - making it suitable for direct drive from 5 V logic or microcontroller GPIOs. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, ensuring reliable turn-on with margin. The SIR188LDP-T1-RE3 maintains low on-resistance and fast switching even at this voltage, unlike many 60 V MOSFETs requiring ≥10 V for full enhancement.

What is the thermal resistance from junction to ambient for SIR188LDP-T1-RE3 on a standard FR4 board?

On a 1" × 1" FR4 board per test condition b, the SIR188LDP-T1-RE3 has R_thJA = 25 °C/W maximum (typical 20 °C/W). This value assumes surface mounting with no additional copper spreading. With optimized PCB layout - including 0.3–0.4 in² of drain-side copper - R_thJA can improve to ~35–40 °C/W. The SIR188LDP-T1-RE3 thermal performance is documented in Vishay Application Note AN821.

Is SIR188LDP-T1-RE3 pin-compatible with standard SO-8 MOSFETs?

Yes, the SIR188LDP-T1-RE3 uses the PowerPAK® SO-8 package, which shares identical footprint, pin count, and pinout with standard SO-8 - including G, S, and D terminal locations. However, it is leadless with exposed drain on the bottom, so soldering requires reflow profile compliance (peak 255 °C) and no manual iron rework. The SIR188LDP-T1-RE3 can be drop-in replaced on existing SO-8 land patterns with minor layout review for trace clearance under the body.

What does "100 % UIS tested" mean for SIR188LDP-T1-RE3?

"100 % UIS tested" means every SIR188LDP-T1-RE3 unit undergoes Unclamped Inductive Switching stress screening at production test - verifying ability to withstand energy surges (E_AS = 80 mJ) without failure. This ensures robustness in real-world inductive load switching (e.g., motor commutation, relay driving) where voltage spikes exceed V_DS rating. The SIR188LDP-T1-RE3 datasheet specifies I_AS = 40 A and E_AS = 80 mJ as guaranteed parameters.

SIR188LDP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 25.8A (Ta), 93.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 65.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR188LDP-T1-RE3 FAQ

1.How can I place an order for SIR188LDP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR188LDP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR188LDP-T1-RE3 reliable?

The price and inventory of SIR188LDP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR188LDP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIR188LDP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR188LDP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR188LDP-T1-RE3?

SIR188LDP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR188LDP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR188LDP-T1-RE3?

For technical support, including SIR188LDP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR188LDP-T1-RE3 requirements.

6.How does Aetrix verify that SIR188LDP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIR188LDP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR188LDP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIR188LDP-T1-RE3?

All SIR188LDP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR188LDP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR188LDP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIR188LDP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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