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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIR476DP-T1-GE3

Name: SIR476DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR476DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIR476DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIR476DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 60A PPAK SO-8

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Product details

Overview

SIR476DP-T1-GE3 from Vishay Siliconix is an N-channel 25-V TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, rated for 60 A continuous drain current at T_C = 25 °C, with R_DS(on) = 0.0017 Ω at V_GS = 10 V and Q_g = 42.5 nC (at V_GS = 4.5 V). It is designed for low-side switching in high-current DC/DC converters and VRM/point-of-load applications.

For engineers reviewing the SIR476DP-T1-GE3 datasheet, SIR476DP-T1-GE3 pinout, SIR476DP-T1-GE3 application, or SIR476DP-T1-GE3 equivalent, key selection criteria include its ultra-low R_DS(on), 100 % avalanche-tested ruggedness, halogen-free and lead-free construction, and thermal performance under high-current transient loads in server and telecom power systems.

Technical Context

This MOSFET employs trench-based silicon architecture optimized for low conduction loss and fast switching in synchronous buck low-side configurations. Its gate charge profile supports efficient 4.5 V drive compatibility while maintaining robust dV/dt immunity and low reverse recovery charge (Q_rr = 40–80 nC) in body diode operation.

The device features a thermally enhanced PowerPAK® SO-8 package with exposed-drain copper pad, delivering R_thJC = 0.9 °C/W (typ.) and enabling high-power density layouts. Absolute maximum V_GS of ±20 V and V_DS = 25 V support stable operation in tightly regulated 12 V and 5 V input rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Supports input rails up to 12 V nominal with margin for transients in POL/VRM stages
R_DS(on) @ 10 V	0.0017 Ω - Enables <1.7 mW conduction loss at 20 A, critical for >95 % efficiency targets
R_DS(on) @ 4.5 V	0.0021 Ω - Ensures strong turn-on with standard logic-level gate drivers in compact designs
Q_g @ 4.5 V	42.5 nC - Balances switching speed and gate drive power in high-frequency (300–1000 kHz) DC/DC converters
I_D (continuous)	60 A @ T_C = 25 °C - Package-limited rating enables single-device solutions for 50–60 A output stages
Q_rr	40–80 nC - Low reverse recovery charge reduces shoot-through risk and EMI in synchronous rectification
R_thJC	0.9 °C/W (typ.) - Allows direct thermal coupling to PCB copper or heatsink for sustained high-current operation

Pinout & Package

PowerPAK® SO-8 is a leadless surface-mount package with exposed drain pad on bottom side. Dimensions: 6.15 mm × 5.15 mm. Thermal path optimized via soldered drain pad to internal ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Main current return node; tied to power ground plane; multiple pins (1,2,3) reduce source inductance
2 (S)	Source	Parallel source connection for lower loop inductance and improved high-frequency stability
3 (S)	Source	Third source terminal enhances current sharing and thermal spreading across PCB copper
4 (G)	Gate	Control input; isolated from power paths; requires low-inductance gate loop for fast switching
5–8 (D)	Drain	High-current input node; all four pins connected to exposed bottom copper pad for minimal R_DS(on) and thermal resistance

Key Features

Feature	Design Value
TrenchFET® Gen III silicon	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-efficiency, high-frequency POL conversion
100 % R_g tested	Ensures consistent gate resistance (0.2–1.0 Ω), critical for predictable turn-on/turn-off timing and EMI control
100 % avalanche tested	Validates ruggedness against inductive switching stress without derating, supporting reliable OR-ing and hot-swap use
Halogen-free & Pb-free	Meets IPC-1752A Class 3 material declarations and RoHS Directive 2011/65/EU compliance requirements
Exposed drain thermal pad	Enables <1.2 °C/W max junction-to-case resistance, allowing >100 W dissipation with proper PCB layout

Applications

Server VRM Low-Side Switch	Telecom DC/DC Converter
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) in dual-socket servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, conducting during bottom switch conduction interval. Use Value: Ultra-low R_DS(on) minimizes conduction loss at 60 A per phase; low Q_g enables 1 MHz+ switching without excessive gate drive loss.	Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves. IC Role / Device Role / Timing Role: Low-side FET in non-isolated buck regulator powering FPGA, ASIC, and RF front-end subsystems. Use Value: Avalanche ruggedness ensures reliability during load dump and short-circuit events; thermal design supports 70 °C ambient operation.
OR-ing Diode Replacement	Industrial PLC Power Module
Use Scenario: Redundant 12 V power inputs in network switches with automatic failover. IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes to eliminate forward voltage drop and heat generation. Use Value: R_DS(on) = 2.1 mΩ at 4.5 V allows <130 mW loss at 25 A vs. >500 mW for 40 V Schottky, reducing thermal footprint by >70 %.	Use Scenario: 24 V input to 3.3/5/12 V distributed power system in programmable logic controller backplane. IC Role / Device Role / Timing Role: Primary low-side switch in isolated flyback or non-isolated buck controllers powering I/O modules. Use Value: -55 °C to +150 °C operating range and 100 % avalanche test ensure long-term reliability in uncontrolled industrial environments.

Server VRM Low-Side Switch

Telecom DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) in dual-socket servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, conducting during bottom switch conduction interval.

Use Value: Ultra-low R_DS(on) minimizes conduction loss at 60 A per phase; low Q_g enables 1 MHz+ switching without excessive gate drive loss.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Low-side FET in non-isolated buck regulator powering FPGA, ASIC, and RF front-end subsystems.

Use Value: Avalanche ruggedness ensures reliability during load dump and short-circuit events; thermal design supports 70 °C ambient operation.

OR-ing Diode Replacement

Industrial PLC Power Module

Use Scenario: Redundant 12 V power inputs in network switches with automatic failover.

IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes to eliminate forward voltage drop and heat generation.

Use Value: R_DS(on) = 2.1 mΩ at 4.5 V allows <130 mW loss at 25 A vs. >500 mW for 40 V Schottky, reducing thermal footprint by >70 %.

Use Scenario: 24 V input to 3.3/5/12 V distributed power system in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Primary low-side switch in isolated flyback or non-isolated buck controllers powering I/O modules.

Use Value: -55 °C to +150 °C operating range and 100 % avalanche test ensure long-term reliability in uncontrolled industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 25-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL6217PBF	R_DS(on) = 0.0022 Ω @ 4.5 V; Q_g = 36 nC; TO-220AB package	Higher thermal resistance (R_thJA ≈ 62 °C/W); requires heatsink for >15 A continuous	Select when through-hole mounting or legacy board compatibility is required; not suitable for high-density POL layouts.
DMT6009LPS-13	R_DS(on) = 0.0019 Ω @ 4.5 V; Q_g = 45 nC; PowerDI 5060 package (5.0 × 6.0 mm)	Lower current rating (50 A @ T_C); no 100 % avalanche test specified	Choose for space-constrained designs where 50 A suffices and avalanche margin is secondary to footprint reduction.

Compared with IRL6217PBF and DMT6009LPS-13, the SIR476DP-T1-GE3 delivers superior thermal performance in surface-mount form factor, verified avalanche ruggedness for mission-critical redundancy, and lowest R_DS(on) × Q_g product among 25 V 60 A-class devices-making it optimal for high-efficiency, high-reliability server and telecom power stages.

Availability

SIR476DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, telecom DC/DC, and industrial PLC power modules requiring stable component supply, full RoHS compliance, and long-term production continuity.

Supply support for SIR476DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiR476DP belongs to Vishay's TrenchFET® Gen III Power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in next-generation computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for SIR476DP-T1-GE3 at 70 °C case temperature?

The SIR476DP-T1-GE3 is rated for 60 A continuous drain current at T_C = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating is package-limited and does not require derating below 70 °C case temperature. The device maintains R_DS(on) stability across this range due to its trench silicon process and PowerPAK® SO-8 thermal design. SIR476DP-T1-GE3 supports high-current POL stages without parallel devices in many 48 V–12 V and 12 V–1 V applications.

Does SIR476DP-T1-GE3 support 4.5 V gate drive in high-frequency DC/DC converters?

Yes, the SIR476DP-T1-GE3 is fully characterized for 4.5 V gate drive, with R_DS(on) = 0.0021 Ω (max) and Q_g = 42.5 nC (typ.) at that voltage. Its TrenchFET® Gen III structure ensures strong enhancement-mode behavior down to 4.5 V, making it compatible with standard logic-level PWM controllers. SIR476DP-T1-GE3 delivers predictable switching performance in 300–1000 kHz buck converters without requiring level-shifting circuitry.

Is SIR476DP-T1-GE3 qualified for automotive applications?

No, the SIR476DP-T1-GE3 is not AEC-Q101 qualified and is not recommended for automotive applications. Vishay's official documentation states it is intended for computing, telecom, and industrial power systems. While it operates from -55 °C to +150 °C, SIR476DP-T1-GE3 lacks automotive-specific qualification testing such as HTOL, ESD, and vibration. For automotive-grade alternatives, consult Vishay's AEC-Q101-qualified TrenchFET® portfolio.

What is the thermal resistance from junction to case (R_thJC) for SIR476DP-T1-GE3?

The SIR476DP-T1-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 0.9 °C/W, with a maximum of 1.2 °C/W, measured from junction to the exposed drain pad. This value assumes proper soldering of the bottom thermal pad to a minimum 1" × 1" FR4 copper area. SIR476DP-T1-GE3 achieves this low R_thJC via its PowerPAK® SO-8 construction, enabling high-power density without external heatsinks in well-designed PCB layouts.

How is avalanche ruggedness validated for SIR476DP-T1-GE3?

SIR476DP-T1-GE3 undergoes 100 % production avalanche testing per JEDEC JESD22-A109, using L = 0.1 mH, I_AS = 50 A, and E_AS = 125 mJ single-pulse conditions. Each unit is tested to ensure it survives rated avalanche energy without parameter shift beyond specification limits. This validation directly supports use in OR-ing, hot-swap, and inductive load switching where unclamped inductive energy must be absorbed safely. SIR476DP-T1-GE3's guaranteed avalanche capability eliminates need for external snubbers in many redundant power architectures.

SIR476DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6150 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SIR476DP-T1-GE3 FAQ

1.How can I place an order for SIR476DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIR476DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIR476DP-T1-GE3 reliable?

The price and inventory of SIR476DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR476DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIR476DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR476DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIR476DP-T1-GE3?

SIR476DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIR476DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIR476DP-T1-GE3?

For technical support, including SIR476DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR476DP-T1-GE3 requirements.

6.How does Aetrix verify that SIR476DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIR476DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR476DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIR476DP-T1-GE3?

All SIR476DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR476DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIR476DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIR476DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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