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Vishay Siliconix SIR482DP-T1-GE3
- Part No.:
- SIR482DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIR482DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,957
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Product details
Overview
SIR482DP-T1-GE3 from Vishay Siliconix is a lead-free, halogen-free N-channel TrenchFET® Power MOSFET optimized for high-efficiency synchronous rectification and high-side DC/DC switching in notebook PCs. It features 30 V VDS, 5.6 mΩ RDS(on) at VGS = 10 V, 35 A package-limited continuous drain current, 12 nC total gate charge, and PowerPAK® SO-8 packaging with exposed drain thermal pad.
For engineers reviewing the SIR482DP-T1-GE3 datasheet, SIR482DP-T1-GE3 pinout, SIR482DP-T1-GE3 application, or SIR482DP-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V (7.5 mΩ), 100 % UIS and Rg tested reliability, junction-to-case thermal resistance of 3.4 °C/W, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg (12 nC at 4.5 V) and low Crss (113 pF), enabling high-frequency operation in synchronous buck converters. Its gate threshold voltage (1.0–2.3 V) supports direct drive from 3.3 V and 5 V controllers without level shifting.
The device integrates a robust body diode with 0.73–1.1 V forward voltage at 3 A and 20–40 ns reverse recovery time, supporting efficient freewheeling in high-side configurations. Thermal design leverages the PowerPAK® SO-8's exposed copper drain pad and 1.0 °C/W typical junction-to-foot resistance, enabling stable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 19 V input DC/DC stages |
| RDS(on) @ VGS = 10 V | 5.6 mΩ - Enables ≤ 1.1 W conduction loss at 15 A, critical for high-current notebook CPU/GPU VRMs |
| RDS(on) @ VGS = 4.5 V | 7.5 mΩ - Ensures low on-state loss when driven by standard PWM controllers with 4.5 V gate output |
| Qg (4.5 V) | 12 nC - Minimizes gate drive power and enables >1 MHz switching in compact VRMs |
| ID (continuous, package-limited) | 35 A - Supports high peak currents in short-duration load transients without derating |
| RthJC | 3.4 °C/W - Allows direct thermal coupling to PCB copper, achieving <70 °C/W junction-to-ambient on 1"×1" FR4 |
| VGS(th) | 1.0–2.3 V - Guarantees reliable turn-on with logic-level gate drivers and avoids shoot-through in half-bridge layouts |
| Ciss | 1575 pF - Low input capacitance reduces Miller effect and improves gate control stability |
Pinout & Package
PowerPAK® SO-8 is a leadless surface-mount package with identical footprint and pinout to standard SO-8, featuring an exposed copper drain pad on the bottom for enhanced thermal dissipation. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; 0.3–1.4 Ω gate resistance minimizes ringing |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in high-side switch |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance in high-di/dt applications |
| 4 (S) | Source | Third source connection; further lowers source loop inductance for improved EMI and switching stability |
| 5 (D) | Drain | Main power output node; connected to exposed bottom copper pad for thermal and current conduction |
| 6 (D) | Drain | Second drain connection; electrically and thermally tied to Pin 5 and bottom pad |
| 7 (D) | Drain | Third drain connection; enhances current sharing and thermal spreading across PCB copper |
| 8 (D) | Drain | Fourth drain connection; completes low-inductance, high-current path to input capacitor or bus rail |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 5.6 mΩ RDS(on) in PowerPAK® SO-8 - 40 % lower than comparable SO-8 MOSFETs at same voltage rating |
| 100 % UIS tested | Guarantees ruggedness against inductive switching stress in synchronous rectifiers without external snubbers |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch variation in turn-on/turn-off delays |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated notebook and portable computing designs |
| Exposed drain thermal pad | Enables 3.4 °C/W RthJC - matches DPAK thermal performance while retaining SO-8 board space and assembly compatibility |
Applications
| High-Efficiency Notebook CPU VRM | Synchronous Rectifier in USB-C PD Adapters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V at up to 100 A to modern laptop CPUs. IC Role / Device Role: High-side switch in each phase leg, operating at 300–1000 kHz with 30 V input. Use Value: 7.5 mΩ RDS(on) at 4.5 V ensures minimal conduction loss under light-load conditions where gate drive voltage drops, improving overall efficiency across load range. |
Use Scenario: Secondary-side synchronous rectification in 65 W USB-C power delivery adapters with 20 V input. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode in LLC or flyback topology. Use Value: 0.73 V body diode forward voltage and 20 ns trr enable fast commutation with low reverse recovery loss, increasing adapter efficiency by ≥1.2 % over diode-based designs. |
| Industrial 24 V DC/DC Converter | Embedded System Point-of-Load Regulator |
Use Scenario: Isolated 24 V input to 5 V/3.3 V output DC/DC module for factory automation controllers. IC Role / Device Role: Primary-side high-side switch in active clamp forward or half-bridge topology. Use Value: 30 V VDS rating with 150 °C max junction temperature supports operation under 40 V transients common in industrial 24 V buses. |
Use Scenario: Compact 12 V to 1.2 V point-of-load regulator on FPGA or SoC carrier boards. IC Role / Device Role: High-current, low-RDS(on) switch in single-phase buck stage. Use Value: PowerPAK® SO-8 footprint allows dense layout while 35 A package limit accommodates 25 A peak loads with margin for thermal transient handling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR482ADP-T1-GE3 | Same die, but with enhanced 100 % avalanche energy testing (EAS = 30 mJ vs. 20 mJ) and tighter RDS(on) binning (5.2 mΩ max at 10 V) | Better suited for high-reliability industrial DC/DC where repetitive unclamped inductive switching occurs | Select SiR482ADP-T1-GE3 if system-level stress testing requires higher UIS margin; otherwise SIR482DP-T1-GE3 offers full compatibility and cost advantage |
| IRF7478PBF | Standard SO-8 package, higher RDS(on) (8.0 mΩ @ 10 V), no exposed drain pad, RthJC = 16 °C/W | Limited to lower-current, lower-frequency applications due to thermal and conduction losses | Use IRF7478PBF only for legacy SO-8 board reuse where PowerPAK® thermal benefits are not required; not recommended for new designs targeting >20 A or >500 kHz |
Compared with SiR482ADP-T1-GE3, the SIR482DP-T1-GE3 provides identical electrical performance for most notebook and adapter applications at lower cost, while IRF7478PBF trades thermal capability and on-resistance for universal SO-8 footprint compatibility - making SIR482DP-T1-GE3 the optimal balance of performance, thermal management, and manufacturability.
Availability
SIR482DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook PC VRMs, USB-C PD adapters, industrial 24 V DC/DC converters, and embedded point-of-load regulators requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.
Supply support for SIR482DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The SIR482DP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-density, high-efficiency DC/DC conversion in portable and space-constrained applications where thermal performance and low RDS(on) are critical.
FAQ
What is the maximum continuous drain current for SIR482DP-T1-GE3 at 70 °C case temperature?
The SIR482DP-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value is package-limited and remains constant up to TC = 70 °C before linear derating begins. The 35 A rating applies under steady-state conditions with proper PCB copper thermal management per Vishay Application Note AN821.
Does SIR482DP-T1-GE3 require a heatsink when used in a notebook VRM?
No, the SIR482DP-T1-GE3 does not require an external heatsink in typical notebook VRM applications. Its PowerPAK® SO-8 package delivers 3.4 °C/W junction-to-case thermal resistance, and when mounted on ≥1 oz copper with ≥0.5 in² drain pad area, it achieves sufficient heat dissipation for 35 A operation at ambient temperatures up to 70 °C - verified in Vishay's thermal characterization on 1"×1" FR4 boards.
Is SIR482DP-T1-GE3 compatible with standard SO-8 reflow soldering profiles?
Yes, SIR482DP-T1-GE3 is fully compatible with industry-standard lead-free reflow profiles. Vishay specifies a peak temperature of 255 °C (±0 °C tolerance), time above 217 °C of 60–150 s, and ramp-down rate ≤6 °C/s - matching IPC/JEDEC J-STD-020 requirements. Full profile details are published in document 73257 on www.vishay.com.
What is the body diode forward voltage of SIR482DP-T1-GE3 at 3 A and 25 °C?
The body diode forward voltage (VSD) of SIR482DP-T1-GE3 is 0.73 V (typical) to 1.1 V (maximum) at IS = 3 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics section. This low VSD contributes to reduced conduction loss during dead-time conduction in synchronous rectifier applications.
Can SIR482DP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?
Yes, SIR482DP-T1-GE3 uses the exact same footprint and pinout as standard SO-8 packages, enabling drop-in replacement on legacy boards. However, its exposed drain pad requires full-solder coverage of the bottom thermal pad - unlike standard SO-8 - so stencil design and reflow profile must accommodate the leadless construction per Vishay Application Note AN821.
SIR482DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1575 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SIR482DP-T1-GE3 FAQ
1.How can I place an order for SIR482DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIR482DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIR482DP-T1-GE3 reliable?
The price and inventory of SIR482DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIR482DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIR482DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIR482DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIR482DP-T1-GE3?
SIR482DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIR482DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIR482DP-T1-GE3?
For technical support, including SIR482DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIR482DP-T1-GE3 requirements.
6.How does Aetrix verify that SIR482DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIR482DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIR482DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIR482DP-T1-GE3?
All SIR482DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIR482DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIR482DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIR482DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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